BPX 48
Silizium-Differential-Fotodiode
Silicon Differential Photodiode
Lead (Pb) Free Product - RoHS Compliant
2007-04-04 1
Wesentliche Merkmale
• Speziell geeignet für Anwendunge n im Bereich
von 400 nm bis 1100 nm
• Hohe Fotoempfindlichkeit
• DIL-Plastikbauform mit hoher Packungsdichte
• Doppeldiode mit extrem hoher Gleich mäßigkeit
Anwendungen
• Nachlaufsteuerung
• Kantenführungen
• Weg- bzw. Winkelabtastungen
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code
BPX 48 Q62702P0017S0001
Features
• Especially suitable for applications from
400 nm to 1100 nm
• High photosensitivity
• DIL plastic package with high packing density
• Double diode with extremely high
homogeneousness
Application
• Follow-up control
• Edge control
• Path and angle scanning
• Industrial electronics
• For control and drive circuits
2007-04-04 2
BPX 48
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 … + 80 °C
Sperrspannung
Reverse voltage VR10 V
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 50 mW
Kennwerte (TA = 25 °C) für jede Einzeldiode
Characteristics (TA = 25 °C) per single diode system
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Fotostrom
Photocurrent
VR = 5 V, Normlicht/standard light A,
T = 2856 K, EV = 1000 Ix
IP
24 (≥ 15)
μA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 900 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectr al range of sens itivity
S = 10% of Smax
λ400 … 1150 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area A1.54 mm2
Abmessung der bestrahlungsempfindlichen Fläche
Dimensions of radiant sensitive area L × B
L × W0.7 × 2.2 mm × mm
Halbwinkel
Half angle ϕ ± 60 Grad
deg.
Dunkelstrom, VR = 10 V
Dark current IR 10 (≤ 100) nA
Spektrale Fotoempfindlichkeit
Spectr al sensitivity
λ = 850 nm
Sλ
0.55
A/W
BPX 48
2007-04-04 3
Max. Abweichung der Fotoempfindlichkeit der
Systeme vom Mittelwert
Max. deviation of the system spectral sensitivity
from the average
ΔS± 5 %
Quantenausbeute
Quantum yield
λ = 850 nm
η
0.8
Electrons
Photon
Leerlaufspannung
Open-circuit voltage
Ev = 1000 Ix, Normlicht/standard light A,T = 2856 K
VO
330 (≥ 280)
mV
Kurzschlussstrom
Short-circuit current
Ev = 1000 Ix, Normlicht/standard light A,T = 2856 K
ISC
24
μA
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
RL = 1 kΩ; VR = 5 V; λ = 850 nm; Ip = 20 μA
tr, tf500 ns
Durchlassspannung, IF = 40 mA, E = 0
Forward voltage VF1.3 V
Kapazität, VR = 0 V, f = 1 MHz, E = 0
Capacitance C025 pF
Temperaturkoeffizient von VO
Temperature coefficient of VO
TCV– 2.6 mV/K
Temperaturkoeffizient von ISC
Temperature coefficient of ISC
Normlicht/standard light A
TCI
0.18
%/K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR = 10 V, λ = 950 nm
NEP 1.0 × 10– 13
Nachweisgrenze, VR = 10 V, λ = 950 nm
Detection limit D* 1.2 × 1012
Kennwerte (TA = 25 °C) für jede Einzeldiode
Characteristics (TA = 25 °C) per single diode system (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
W
Hz
------------
cm Hz×
W
--------------------------
BPX 48
2007-04-04 4
Relative Spectral Sensitivity
Srel = f (λ)
Capacitance
C = f (VR), f = 1 MHz, E = 0
Directional Characteristics
Srel = f (ϕ)
OHF01402
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
100 0
0
0
Total Power Dissipation
Ptot = f (TA)
Dark Current
IR = f (TA), VR = 10 V
Photocurrent IP = f (Ev), VR = 5 V
Open-Circuit Voltage VO = f (Ev)
Dark Current
IR = f (VR), E = 0
BPX 48
2007-04-04 5
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
4.05 (0.159)
3.75 (0.148)
0.5 (0.020)
0.3 (0.012)
0.8 (0.031)
0.6 (0.024)
2.54 (0.100)
7.8 (0.307)
7.4 (0.291) 6.6 (0.260)
6.3 (0.248)
0.3 (0.012)
0.25 (0.010)
0.8 (0.031)
2.2 (0.087)
1.9 (0.075)
3.5 (0.138)
3.0 (0.118)
7.62 (0.300) spacing
1.10 (0.043) 0.09 (0.004)
0.4 (0.016)
2.45 (0.096)
2.54 (0.100)
1.85 (0.073)
2.25 (0.089)
cathode
anode
Radiant sensitive area
Approx. weight 0.1 g
GEOY6638
Diode system
2.0 (0.079) x 0.67 (0.026)
0.6 (0.024)
0.5 (0.020)
0.7 (0.028)
0...5˚
2007-04-04 6
BPX 48
Lötbedingungen
Soldering Conditions
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written app roval of OSRAM OS.
1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected
to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.
2 Life support devices or syste ms are intended (a) to be implanted in the human body, o r (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
OHLY0598
0
050 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
