Mar. 2013. Version 2.0 MagnaChip Semiconductor Ltd.
1
MPKB2SA/SB100U120 1200V FRD Module
Absolute Maximum Ratings @Tc = 25oC (Per Leg)
Characteristics
Conditions
Symbol
Rating
Repetitive Peak Reverse Voltage
VRRM
1200
V
Reverse DC Voltage
VR(DC)
960
V
Average Forward Current
TC=25oC
Resistive Load
IF(AV)
200
A
TC=100oC
100
A
Surge(non-repetitive) Forward Current
One Half Cycle at 60Hz,
Peak Value
IFSM
1400
A
I2t for Fusing
Value for One Cycle Current,
tw = 8.3ms, Tj= 25℃ Start
I2t
8.13* 103
Junction Temperature
TJ
-40 ~ 150
Maximum Power Dissipation
PD
290
Isolation Voltage
@AC 1 minutes
Visol
2500
Storage Temperature
Tstg
-40 ~ 125
Mounting Torque(M6)
-
4.0
Terminal Torque(M5)
Typical Including Screws
-
2.0
Weight
-
120
Product
Name
MPKB2SA100U120
MPKB2SB100U120
Optional
Information
Side Common
& N-type
Side Common
& P-type
MPKB2SA/SB100U120
1200V FRD Module
General Description
Ultra-FRD module devices are optimized to reduce losses
and EMI/RFI in high frequency power conditioning electrical
systems.
These diode modules are ideally suited for power converters,
motors drives and other applications where switching losses
are significant portion of the total losses.
Features
Repetitive Reverse Voltage : VRRM=1200V
Low Forward Voltage : VF(typ.) = 2.2V
Average Forward Current : IF(Av.)=100A @TC=100℃
Ultra-Fast Reverse Recovery Time : trr(typ.) = 40ns
Extensive Characterization of Recovery Parameters
Reduced EMI and RFI
Isolation Type Package
Applications
High Speed & High Power converters, Welders
Various Switching and Telecommunication Power Supply
5DM-1
E301932
Ordering Information
Mar. 2013. Version 2.0 MagnaChip Semiconductor Ltd.
2
MPKB2SA/SB100U120 1200V FRD Module
Electrical Characteristics @Tc = 25oC(unless otherwise specified)
Characteristics
Conditions
Symbol
Min.
Typ.
Max.
Unit
Cathode Anode Breakdown Voltage
IR=100uA
VR
1200
-
-
V
Diode Maximum Forward Voltage
IF=100A
TC=25℃
VFM
-
2.2
2.8
V
TC=100℃
-
2.0
-
Diode Peak Reverse Recovery Current
Tc=100℃,
VRRM applied
TC=100℃
IRRM
-
-
1.0
mA
Diode Reverse Recovery Time
IF =1A,VR=30V
di/dt = -200A/uS
TC=25℃
trr
-
40
60
ns
Diode Reverse Recovery Time
IF =100A,VR=600V
di/dt = -200A/uS
TC=25℃
trr
-
110
-
ns
TC=100℃
-
180
-
Thermal Characteristics
Characteristics
Conditions
Symbol
Min.
Typ.
Max.
Unit
Thermal Resistance(Isolation Type)
Junction to Case
Rth(j-c)
-
-
0.42
℃/W
Mar. 2013. Version 2.0 MagnaChip Semiconductor Ltd.
3
MPKB2SA/SB100U120 1200V FRD Module
Fig.1 Typical Forward Voltage Drop
vs. Instantaneous Forward Current
Fig.2 Typical Reverse Recovery Time
Vs. –di/dt
Fig.3 Transient Thermal Impedance(Zthjc)
Characteristics
Fig.4 Forward Current Derating Curve
0 1 2 3
0
50
100
150
200
250
300
Forward Current,IF[A]
TC=25℃
TC=125℃
Forward Voltage Drop,VF[V]
020 40 60 80 100 120 140 160
0
50
100
150
200
250
DC
Average Forward Current,IF(AVG)[A]
Case Temperatute, Tc[℃]
100 200 300 400 500
0
30
60
90
120
150
Reverse Recovery Time[ns]
di/dt[A/us]
1E-5 1E-4 1E-3 0.01 0.1 1 10
1E-4
1E-3
0.01
0.1
1
TC=25℃
Thermal Response Zthjc[℃/W]
Rectangular Pulse Duration Time[sec]
Mar. 2013. Version 2.0 MagnaChip Semiconductor Ltd.
4
MPKB2SA/SB100U120 1200V FRD Module
Package Dimension
5DM-1
Dimensions are in millimeters, unless otherwise specified
TBD
TBD
MA
X
23.
5
15.
0±0
.5
Mar. 2013. Version 2.0 MagnaChip Semiconductor Ltd.
5
MPKB2SA/SB100U120 1200V FRD Module
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.