OCTOBER 2008
DSC-3834/10
1
©2007 Integrated Device Technology, Inc.
Features
◆◆
◆◆
◆64K x 16 advanced high-speed CMOS Static RAM
◆◆
◆◆
◆Equal access and cycle times
— Commercial: 10/12/15/20ns
— Industrial: 12/15/20ns
◆◆
◆◆
◆One Chip Select plus one Output Enable pin
◆◆
◆◆
◆Bidirectional data inputs and outputs directly
LVTTL-compatible
◆◆
◆◆
◆Low power consumption via chip deselect
◆◆
◆◆
◆Upper and Lower Byte Enable Pins
◆◆
◆◆
◆Single 3.3V power supply
◆◆
◆◆
◆Available in 44-pin Plastic SOJ, 44-pin TSOP, and
48-Ball Plastic FBGA packages
Description
The IDT71V016 is a 1,048,576-bit high-speed Static RAM organized
as 64K x 16. It is fabricated using IDT’s high-perfomance, high-reliability
CMOS technology. This state-of-the-art technology, combined with inno-
vative circuit design techniques, provides a cost-effective solution for high-
speed memory needs.
The IDT71V016 has an output enable pin which operates as fast
as 5ns, with address access times as fast as 10ns. All bidirectional
inputs and outputs of the IDT71V016 are LVTTL-compatible and operation
is from a single 3.3V supply. Fully static asynchronous circuitry is used,
requiring no clocks or refresh for operation.
The IDT71V016 is packaged in a JEDEC standard 44-pin Plastic
SOJ, a 44-pin TSOP Type II, and a 48-ball plastic 7 x 7 mm FBGA.
Functional Block Diagram
Output
Enable
Buffer
Address
Buffers
Chip
Enable
Buffer
Write
Enable
Buffer
Byte
Enable
Buffers
OE
A0–A15 Row / Column
Decoders
CS
WE
BHE
BLE
64K x 16
Memory
Array
Sense
Amps
and
Write
Drivers
16
Low
Byte
I/O
Buffer
8
8
8
8
I/O8
I/O15
I/O7
I/O0
3834 drw 01
High
Byte
I/O
Buffer
3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
IDT71V016SA/HSA
6.422
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit) Commercial and Industrial Temperature Ranges
123456
ABLE OE A
0
A
1
A
2
NC
B I/O
8
BHE A
3
A
4
CS I/O
0
C I/O
9
I/O
10
A
5
A
6
I/O
1
I/O
2
DV
SS
I/O
11
NC A
7
I/O
3
V
DD
EV
DD
I/O
12
NC NC I/O
4
V
SS
F I/O
14
I/O
13
A
14
A
15
I/O
5
I/O
6
G I/O
15
NC A
12
A
13
WE I/O
7
HNC A
8
A
9
A
10
A
11
NC
3834 t bl 02a
Pin Configurations
SOJ/TSOP
Top View
Pin Description
Truth Table(1)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
I/O
7
NC
A
12
A
13
A
14
A
15
WE
I/O
6
I/O
5
I/O
4
V
SS
V
DD
I/O
3
I/O
2
I/O
1
I/O
0
CS
A
0
A
1
A
2
A
3
A
4
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
6
A
7
OE
BHE
BLE
I/O
15
I/O
14
I/O
13
I/O
12
V
SS
V
DD
I/O
11
I/O
10
I/O
9
I/O
8
A
8
A
9
A
10
A
11
NC
A
5
NC
SO44-1
SO44-2
3834 drw 02
NOTE:
1. H = VIH, L = VIL, X = Don't care.
CS OE WE BLE BHE I/O
0
-I/O
7
I/O
8
-I/O
15
Function
H X X X X High-Z High-Z Deselected – Standby
LLH L H DATA
OUT
High -Z Low Byte Read
L L H H L High-Z DATA
OUT
High Byte Read
LLH L L DATA
OUT
DATA
OUT
Word Read
LXL L L DATA
IN
DATA
IN
Word Write
LXL L H DATA
IN
High-Z Low Byt e Writ e
L X L H L High-Z DATA
IN
High By te Write
L H H X X High-Z High-Z Outputs Disabled
L X X H H High-Z High-Z Outputs Disabled
3834 tbl 02
FBGA (BF48-1)
Top View
6.42
3
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit) Commercial and Industrial Temperature Ranges
Symbol Parameter
71V016SA10 71V016SA12 71V016SA15 71V016SA20
Unit
Co m 'l O n l y Co m 'l I n d C o m' l In d Com'l I n d
I
CC
Dynami c O p e rating Curre nt
CS ≤ V
LC
, Outputs Open, V
DD
= Max., f = f
MAX
(3)
Max. 160 150 160 130 130 120 120 mA
Typ.
(4)
(5)
65 60 -- 55 -- 50 --
I
SB
Dynamic Standby Power Supply Current
CS ≥ V
HC
, Outputs Open, V
DD
= Max., f = f
MAX
(3)
45 40 45 35 35 30 30 mA
I
SB1
Full Stand by Po we r Sup p ly Curre nt (s tati c)
CS ≥ V
HC
, Outputs Open, V
DD
= Max., f = 0
(3)
10 10 10 10 10 10 10 mA
3834 tb l 08
Absolute Maximum Ratings(1) Recommended Operating
Temperature and Supply Voltage
DC Electrical Characteristics
(VDD = Min. to Max., Commercial and Industrial Temperature Ranges)
Capacitance
(TA = +25°C, f = 1.0MHz, SOJ package)
Recommended DC Operating
Conditions
DC Electrical Characteristics(1,2)
(VDD = Min. to Max., VLC = 0.2V, VHC = VDD – 0.2V)
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
NOTES:
1. For 71V016SA10 only.
2. For all speed grades except 71V016SA10.
3. VIH (max.) = VDD+2V for pulse width less than 5ns, once per cycle.
4. VIL (min.) = –2V for pulse width less than 5ns, once per cycle.
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
NOTES:
1. All values are maximum guaranteed values.
2. All inputs switch between 0.2V (Low) and VDD – 0.2V (High).
3. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing .
4. Typical values are based on characterization data for H step only measured at 3.3V, 25°C and with equal read and write cycles.
Symbol Rating Value Unit
V
DD
Supply Voltage R elative to
V
SS
–0.5 to +4.6 V
V
IN
, V
OUT
Term inal Voltage R elativ e
to V
SS
–0.5 to V
DD
+0.5 V
T
BIAS
Tem perature Under Bias –55 to +125
o
C
T
STG
St orage Temperat ure –55 t o + 125
o
C
P
T
Pow er Dissipation 1.25 W
I
OUT
DC Output Current 50 m A
3834 tbl 03
Grade Temperature V
SS
V
DD
Commercial 0° C to +70°C 0V See Be low
Industrial -40°C to +85°C 0V See Below
3834 tbl 04
Symbol Parameter Min. Typ. Max. Unit
V
DD
(1)
Supply Voltage 3.15 3.3 3.6 V
V
DD
(2)
Supply Voltage 3.0 3.3 3.6 V
Vss Ground 0 0 0 V
V
IH
In put High Volt age 2.0
____
V
DD
+0.3
(3)
V
V
IL
In put Low Volt age –0.3
(4)
____
0.8 V
3834 tbl 05
Symbol Parameter
(1)
Conditions Max. Unit
C
IN
Input Capacit ance V
IN
= 3dV 6 pF
C
I/O
I/O Capacitance V
OUT
= 3dV 7 pF
3834 tbl 06
Symbol Parameter Test Condition
IDT71V016SA
UnitMin. Max.
|I
LI
| I nput Le akage Current V
DD
= Max., V
IN
= V
SS
to V
DD
___
5µA
|I
LO
| O utput Leakage Current V
DD
= Max., CS = V
IH
, V
OUT
= V
SS
to V
DD
___
5µA
V
OL
O utput Lo w Volt age I
OL
= 8m A, V
DD
= M in.
___
0.4 V
V
OH
O utput H igh Volt age I
OH
= –4mA, V
DD
= M in. 2.4
___
V
3834 tbl 07
6.424
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit) Commercial and Industrial Temperature Ranges
AC Test Conditions
AC Test Loads
Figure 3. Output Capacitive Derating
Figure 1. AC Test Load Figure 2. AC Test Load
(for t CLZ, tOLZ, tCHZ, tOHZ, tOW, and tWHZ)
*Including jig and scope capacitance.
+1.5V
50Ω
I/O Z
0
=50Ω
3834 drw 03
30pF
3834 drw 04
320Ω
350Ω5pF*
DATA OUT
3.3V
1
2
3
4
5
6
7
20 40 60 80 100 120 140 160 180 200
∆t
AA,
t
ACS
(Typical, ns)
CAPACITANCE (pF)
8
3834 drw 05
•
•
•
•
•
•
•
Input Pulse Lev els
Input Rise/Fall Times
Input Tim ing Ref erence Lev els
Output Reference Levels
AC Test Load
GND to 3.0V
1.5ns
1.5V
1.5V
See Figure 1, 2 and 3
3834 tbl 09
6.42
5
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit) Commercial and Industrial Temperature Ranges
71V016SA10
(2)
71V016SA12 71V016SA15 71V016SA20
Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Unit
READ CYCLE
t
RC
Re ad Cyc le Time 10
____
12
____
15
____
20
____
ns
t
AA
Address Access Time
____
10
____
12
____
15
____
20 ns
t
ACS
Chip Select Access Time
____
10
____
12
____
15
____
20 ns
t
CLZ
(1)
Chip Select Low to Output in Lo w-Z 4
____
4
____
5
____
5
____
ns
t
CHZ
(1)
Chip Se l e ct Hi g h to Outp ut i n Hig h-Z
____
5
____
6
____
6
____
8ns
t
OE
Output E nab le Lo w to Outp ut Vali d
____
5
____
6
____
7
____
8ns
t
OLZ
(1)
Outp ut Enab le Lo w to Ou tpu t in Lo w-Z 0
____
0
____
0
____
0
____
ns
t
OHZ
(1)
Ou tpu t En able High to O u tpu t i n Hi gh-Z
____
5
____
6
____
6
____
8ns
t
OH
Output Ho ld fro m Ad dre ss Change 4 — 4 — 4 — 4 — ns
t
BE
Byte Enable Lo w to Outp ut Valid — 5 — 6 — 7
____
8ns
t
BLZ
(1)
By te En ab le Low to Outp ut i n Lo w-Z 0
____
0
____
0
____
0
____
ns
t
BHZ
(1)
By te Enab le Hi g h to Outp ut i n Hig h -Z
____
5
____
6
____
6
____
8ns
WR I T E CYC L E
t
WC
Write Cycle Time 10
____
12
____
15
____
20
____
ns
t
AW
Address Valid to End of Write 7
____
8
____
10
____
12
____
ns
t
CW
Chip S e le c t Low to E nd o f Write 7
____
8
____
10
____
12
____
ns
t
BW
By te Enable Low to End of Write 7
____
8
____
10
____
12
____
ns
t
AS
Address Set-up Time 0
____
0
____
0
____
0
____
ns
t
WR
Address Hold from End of Write 0
____
0
____
0
____
0
____
ns
t
WP
Write Pulse Width 7
____
8
____
10
____
12
____
ns
t
DW
Data Valid to End of Write 5
____
6
____
7
____
9
____
ns
t
DH
Data Ho l d Ti me 0
____
0
____
0
____
0
____
ns
t
OW
(1)
Write E nab le High to Output in Low-Z 3
____
3
____
3
____
3
____
ns
t
WHZ
(1)
Write Enable Low to Outp ut in High-Z
____
5
____
6
____
6
____
8ns
3834 t bl 10
Timing Waveform of Read Cycle No. 1(1,2,3)
NOTES:
1. WE is HIGH for Read Cycle.
2. Device is continuously selected, CS is LOW.
3. OE, BHE, and BLE are LOW.
AC Electrical Characteristics (VDD = Min. to Max., Commercial and Industrial Temperature Ranges)
DATA
OUT
ADDRESS
3834 drw 06
t
RC
t
AA
t
OH
t
OH
DATA
OUT
VALID
PREVIOUS DATA
OUT
VALID
NOTES:
1. This parameter is guaranteed with the AC Load (Figure 2) by device characterization, but is not production tested.
2. 0°C to +70°C temperature range only.
6.426
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit) Commercial and Industrial Temperature Ranges
Timing Wavefor m of Read Cycle No. 2(1)
NOTES:
1. A write occurs during the overlap of a LOW CS, LOW BHE or BLE, and a LOW WE.
2. OE is continuously HIGH. If during a WE controlled write cycle OE is LOW, tWP must be greater than or equal to tWHZ + tDW to allow the I/O drivers to turn off and data to be placed
on the bus for the required tDW. If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the minimum write pulse is as short as the specified tWP.
3. During this period, I/O pins are in the output state, and input signals must not be applied.
4. If the CS LOW or BHE and BLE LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high-impedance state.
5. Transition is measured ±200mV from steady state.
Timing Waveform of Write Cycle No. 1 (WE Controlled Timing)(1,2,4)
NOTES:
1. WE is HIGH for Read Cycle.
2. Address must be valid prior to or coincident with the later of CS, BHE, or BLE transition LOW; otherwise tAA is the limiting parameter.
3. Transition is measured ±200mV from steady state.
ADDRESS
OE
CS
DATA
OUT
3834 drw 07
(3)
(3)
(3)
DATA VALID
t
AA
t
RC
t
OE
t
OLZ
t
CHZ
t
OHZ
OUT
BHE,BLE
(3)
t
ACS
(3)
t
BLZ
t
CLZ
(2)
t
BE
t
OH
t
BHZ
(3)
(2)
ADDRESS
CS
DATA
IN
3834 drw 08
(5)
(5)
(5)
DATA
IN
VALID
t
WC
t
AS
t
WHZ
(2)
t
CW
t
CHZ
t
OW
t
WR
WE
t
AW
DATA
OUT
t
DW
t
DH
PREVIOUS DATA VALID DATA VALID
BHE
,
BLE
t
BW
t
WP
(5)
t
BHZ
(3)
6.42
7
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit) Commercial and Industrial Temperature Ranges
Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1,4)
NOTES:
1. A write occurs during the overlap of a LOW CS, LOW BHE or BLE, and a LOW WE.
2. OE is continuously HIGH. If during a WE controlled write cycle OE is LOW, tWP must be greater than or equal to tWHZ + tDW to allow the I/O drivers to turn off and data to be placed
on the bus for the required tDW. If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the minimum write pulse is as short as the specified tWP.
3. During this period, I/O pins are in the output state, and input signals must not be applied.
4. If the CS LOW or BHE and BLE LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high-impedance state.
5. Transition is measured ±200mV from steady state.
Timing Wavefor m of Write Cycle No. 3 (BHE, BLE Controlled Timing)(1,4)
ADDRESS
CS
DATA
IN
3834 drw 09
DATA
IN
VALID
t
WC
t
AS (2)
t
CW
t
WR
WE
t
AW
DATA
OUT
t
DW
t
DH
BHE,BLE
t
BW
t
WP
ADDRESS
CS
DATA
IN
3834 drw 10
DATA
IN
VALID
t
WC
t
AS
(2)
t
CW
t
WR
WE
t
AW
DATA
OUT
t
DW
t
DH
BHE, BLE
t
BW
t
WP
6.428
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit) Commercial and Industrial Temperature Ranges
Ordering Information
SA
Power
XX
Speed
XXX
Package
X
Process/
Temperature
Range
Blank
I
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
Y
PH
BF
400-mil SOJ (SO44-1)
400-mil TSOP Type II (SO44-2)
7.0 x 7.0 mm FBGA (BF48-1)
10**
12
15
20
71V016
Device
Type
Speed in nanoseconds
3834 drw 11
** Commercial temperature range only.
X
Tape & Reel
8
X
GRestricted hazardous
substance device
HCurrent generation die step optional
H
First generation or current stepping
Blank
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
Datasheet Document History
9
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-bit) Commercial and Industrial Temperature Ranges
CORPORATE HEADQUARTERS for SALES: for Tech Support:
6024 Silver Creek Valley Road 800-345-7015 or ipchelp@idt.com
San Jose, CA 95138 408-284-8200 800-345-7015
fax: 408-284-2775
www.idt.com
1/7/00 Updated to new format
Pp. 1, 3, 5, 8 Added Industrial Temperature range offerings
Pg. 2 Numbered I/Os and address pins on FBGA Top View
Pg. 6 Revised footnotes on Write Cycle No. 1 diagram
Pg. 7 Revised footnotes on Write Cycle No. 2 and No. 3 diagrams
Pg. 9 Added Datasheet Document History
08/30/00 Pg. 3 Tighten ICC and ISB.
Pg. 5 Tighten tCLZ, tCHZ, tOHZ, tBHZ and tWHZ
08/22/01 Pg. 8 Removed footnote "available in 15ns and 20ns only"
06/20/02 Pg. 8 Added tape and reel field to ordering information
01/30/04 Pg. 8 Added "Restricted hazardous substance device" to ordering information.
09/27/06 Pg. 8 Corrected ordering information, changed position of I and G.
02/14/07 Pg.8 Added H step generation to data sheet ordering information.
06/26/07 Pg.3 Changed typical parameters for ICC, DC electrical characteristics table.
10/13/08 Pg.8 Removed "IDT" from orderable part number
