ASAT15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT15 is Designed for General Purpose Class Operations up to 1.7 GHz. PACKAGE STYLE .250 2L FLG(A) A .020 x 45 O .130 NOM. FEATURES: .050 x 45 * Intenal Input Matching Network * PG = 9.2 dB at 15 W/1.7 GHz * OmnigoldTM Metalization System D C L B M E F G H MAXIMUM RATINGS IC 3.0 A VCBO 45 V VCEO 15 V PDISS 3.0 V 37.2 W -65 C to +200 C TJ MAXIMUM MINIMUM inches / mm inches / mm A .055 / 1.40 .065 / 1.65 .124 / 3.15 C .243 / 6.17 .253 / 6.43 D .635 / 16.13 .665 / 16.89 E .555 / 14.10 .565 / 14.35 F .739 / 18.77 .749 / 19.02 G .315 / 8.00 .325 / 8.26 H .002 / 0.05 .006 / 0.15 I .055 / 1.40 .065 / 1.65 J .075 / 1.91 .095 / 2.41 .190 / 4.83 K TSTG -65 C to +150 C JC 4.7 C/W CHARACTERISTICS .245 / 6.22 L .255 / 6.48 .092 / 2.34 M ORDER CODE: ASI10518 TC = 25 C NONETEST CONDITIONS SYMBOL K DIM B VEBO J I MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 5.0 mA 45 V BVCEO IC = 5.0 mA 12 V BVEBO IE = 5.0 mA 3.0 V hFE VCE = 5.0 V COB VCB = 28 V PG C VCE = 28 V IC = 1.0 A 15 f = 1.0 MHz POUT = 15 W f = 1.65 GHz 9.2 45 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. 150 --- 12 pF dB % REV. C 1/3 ERROR! REFERENCE SOURCE NOT FOUND. ASAT15 TYPICAL PERFORMANCE IMPEDANCE DATA A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/3 ERROR! REFERENCE SOURCE NOT FOUND. ASAT15 TEST CIRCUIT A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 3/3