2MBI150SC-120 IGBT Module 1200V / 150A 2 in one-package Features * High speed switching * Voltage drive * Low inductance module structure Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector Continuous current 1ms 1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage *1 Screw torque Symbol VCES VGES Tc=25C IC Tc=80C Tc=25C IC pulse Tc=80C -IC -IC pulse PC Tj Tstg V is Mounting *2 Terminals *2 Rating 1200 20 200 150 400 300 150 300 1000 +150 -40 to +125 AC 2500 (1min. ) 3.5 3.5 Unit V V A A A A A A W C C V N*m N*m Equivalent Circuit Schematic C2E1 E2 C1 G1 mm G2 E2 . de ew n for *1 : Aii terminals should be connected together when isolation test will be done *2 : Recommendable value : 2.5 to 3.5 N*m(M5) E1 n sig Electrical characteristics (at Tj=25C unless otherwise specified) Item Symbol Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Cies Coes t No Forward on voltage Cres ton tr tr(i) toff tf VF Reverse recovery time trr Turn-off time d en Characteristics Min. Typ. Max. - - 2.0 - - 0.4 5.5 7.2 8.5 - 2.3 2.6 - 2.8 - - 18000 - - 3750 - - 3300 - - 0.35 1.2 - 0.25 0.6 - 0.1 - - 0.45 1.0 - 0.08 0.3 - 2.3 3.0 - 2.0 - - - 0.35 o c e r Conditions Unit VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=150mA Tc=25 C VGE=15V, IC=150A Tc=125C VGE=0V VCE=10V f=1MHz VCC =600V IC=150A VGE=15V RG=5.6 ohm mA A V V Tj=25C Tj=125C IF=150A V IF=150A, VGE=0V pF s s Thermal resistance characteristics Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. - - - - - 0.025 Conditions Unit Max. 0.125 IGBT 0.26 Diode the base to cooling fin - *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound http://store.iiic.cc/ C/W C/W C/W IGBT Module 2MBI150SC-120 Characteristics (Representative) Collector current vs. Collector-Emiiter voltage Tj= 125C (typ.) Collector current vs. Collector-Emiiter voltage Tj= 25C (typ.) 350 350 VGE= 20V 15V 12V VGE= 20V15V 12V 300 300 250 Collector current : Ic [ A ] Collector current : Ic [ A ] 250 200 10V 150 100 10V 200 150 100 50 50 8V 8V 0 0 0 1 2 3 4 5 0 Collector - Emitter voltage : VCE [ V ] 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector current vs. Collector-Emiiter voltage VGE=15V (typ.) Collector-Emiiter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) 10 350 Tj= 25C 300 Tj= 125C Collector - Emitter voltage : VCE [ V ] 8 200 100 e m m 4 nd 50 0 0 1 2 o c e r 3 t 4 Ic= 300A Ic= 150A 2 Ic= 75A 0 5 5 10 15 20 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emiiter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C Dynamic Gate charge (typ.) Vcc=600V, Ic=150A, Tj= 25C No Collector - Emitter voltage : VCE [ V ] 50000 Capacitance : Cies, Coes, Cres [ pF ] n sig ew n for 150 . de 6 Cies 10000 5000 Coes 25 1000 25 800 20 600 15 400 10 200 5 1000 Cres 500 0 0 5 10 15 20 25 30 35 0 0 500 1000 Gate charge : Qg [ nC ] Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ 1500 Gate - Emitter voltage : VGE [ V ] Collector current : Ic [ A ] 250 IGBT Module 2MBI150SC-120 Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg= 5.6ohm, Tj= 125C Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg= 5.6ohm, Tj= 25C 1000 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff toff 500 ton tr 100 tf 500 ton tr tf 100 50 50 0 50 100 150 200 250 0 50 Collector current : Ic [ A ] 100 150 200 Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=150A, VGE=15V, Tj= 25C Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=5.6ohm 5000 40 Eon(125C) ton Switching loss : Eon, Eoff, Err [ mJ/pulse ] toff Switching time : ton, tr, toff, tf [ nsec ] 250 Collector current : Ic [ A ] tr 1000 500 100 1 10 t No eco . de 20 n sig n r o f nd e mm tf 50 30 ew Eon(25C) Eoff(125C) Eoff(25C) 10 Err(125C) Err(25C) 0 100 r 0 100 200 300 Collector current : Ic [ A ] Gate resistance : Rg [ ohm ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=150A, VGE=15V, Tj= 125C Reverse bias safe operating area +VGE=15V, -VGE<=15V, Rg>=5.6ohm, Tj<=125C 100 350 Eon 250 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 300 80 60 40 Eoff 200 150 100 20 50 Err 0 0 1 10 100 0 Gate resistance : Rg [ ohm ] 200 400 600 800 1000 Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ 1200 1400 IGBT Module 2MBI150SC-120 Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=5.6ohm Forward current vs. Forward on voltage (typ.) 300 350 Tj=25C Tj=125C 300 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] trr(125C) Forward current : IF [ A ] 250 200 150 100 Irr(125C) 100 trr(25C) Irr(25C) 50 0 10 0 1 2 3 4 Forward on voltage : VF [ V ] 0 50 100 150 200 250 Forward current : IF [ A ] Transient thermal resistance 0.5 Thermal resistanse : Rth(j-c) [ C/W ] FWD IGBT 0.1 de 0.05 ew n for 0.01 0.005 0.001 0.01 nd e mm 0.1 o c e r 1 Pulse width : Pw [ sec ] t No Outline Drawings, mm mass : 240g http://store.iiic.cc/ . n sig