BFP620 Low Noise SiGe:C Bipolar RF Transistor * Highly linear low noise RF transistor 3 * Provides outstanding performance 2 4 for a wide range of wireless applications 1 * Based on Infineon's reliable high volume Silicon Germanium technology * Ideal for CDMA and WLAN applications * Collector design provides high linearity of 14.5 dBm OP1dB for low voltage application * Maximum stable gain Gms = 21.5 dB at 1.8 GHz Gma = 11 dB at 6 GHz * Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz Outstanding noise figure NFmin = 1.3 dB at 6 GHz * Accurate SPICE GP model enables effective design in process * Pb-free (RoHS compliant) and halogen-free package with visible leads * Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking BFP620 R2s Pin Configuration 1=B 2=E 3=C 1 4=E - Package - SOT343 2013-09-13 BFP620 Maximum Ratings at TA = 25 C, unless otherwise specified Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA = 25 C 2.3 TA = -55 C 2.1 Collector-emitter voltage VCES 7.5 Collector-base voltage VCBO 7.5 Emitter-base voltage VEBO 1.2 Collector current IC 80 Base current IB 3 Total power dissipation1) Ptot 185 mW Junction temperature TJ 150 C Ambient temperature TA -65 ... 150 Storage temperature TStg -65 ... 150 mA TS 95C Thermal Resistance Parameter Symbol Junction - soldering point2) RthJS Value Unit 300 K/W Values Unit Electrical Characteristics at TA = 25 C, unless otherwise specified Parameter Symbol min. typ. max. 2.3 2.8 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 1 mA, IB = 0 Collector-emitter cutoff current A ICES VCE = 7.5 V, VBE = 0 - - 10 VCE = 5 V, VBE = 0 - 0.001 0.04 ICBO - 1 40 IEBO - 10 900 hFE 110 180 270 Collector-base cutoff current nA VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain - IC = 50 mA, VCE = 1.5 V, pulse measured 1T S is measured on the emitter lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2013-09-13 BFP620 Electrical Characteristics at TA = 25 C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. fT - 65 - Ccb - 0.12 0.2 Cce - 0.22 - Ceb - 0.46 - AC Characteristics (verified by random sampling) Transition frequency GHz IC = 50 mA, VCE = 1.5 V, f = 1 GHz Collector-base capacitance pF VCB = 2 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure dB NFmin IC = 5 mA, VCE = 1.5 V, f = 1.8 GHz, ZS = ZSopt IC = 5 mA, VCE = 1.5 V, f = 6 GHz, ZS = ZSopt Power gain, maximum stable1) - 0.7 - - 1.3 - Gms - 21.5 - dB Gma - 11 - dB IC = 50 mA, VCE = 1.5 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 50 mA, VCE = 1.5 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHz |S21e|2 Transducer gain dB IC = 50 mA, VCE = 1.5 V, ZS = ZL = 50 , f = 1.8 GHz - 20 - f = 6 GHz - 9.5 - IP3 - 25.5 - P-1dB - 14.5 - Third order intercept point at output2) dBm VCE = 2 V, IC = 50 mA, ZS =ZL =50 , f = 1.8 GHz 1dB compression point at output IC = 50 mA, VCE = 2 V, ZS =ZL =50 , f = 1.8 GHz 1/2 ma = |S21e / S12e | (k-(k-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 1G 3 2013-09-13 BFP620 Total power dissipation P tot = (TS) Permissible Pulse Load RthJS = (tp) 10 3 200 mW 160 K/W RthJS Ptot 140 120 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 2 100 80 60 40 20 0 0 20 40 60 80 100 120 C 10 1 -7 10 150 10 -6 10 -5 10 -4 10 -3 10 -2 C TS 10 tp Permissible Pulse Load Collector-base capacitance Ccb = (VCB ) Ptotmax/PtotDC = (tp ) f = 1MHz 10 1 0.4 P totmax/ PtotDC pF CCB 0.3 D=0 0.005 0,01 0,02 0,05 0,1 0,2 0,5 0.25 0.2 0.15 0.1 0.05 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 C 10 0 0 0 tp 1 2 3 4 5 V 7 VCB 4 2013-09-13 0 BFP620 Third order Intercept Point IP3 =(I C) Third order Intercept Point IP3 = (IC) (Output, ZS = ZL=50 ) (Output, ZS = ZL = 50 ) VCE = parameter, f = 900 MHz VCE = parameter, f = parameter 27 2.3V dBm 1.8V IP3 21 18 15 1.3V 12 0.8V 9 6 3 0 0 10 20 30 40 50 60 70 80 mA 100 IC Transition frequency fT= (IC) Power gain Gma, Gms = (IC ) f = 1GHz VCE = 1.5V VCE = Parameter in V f = Parameter in GHz 65 GHz 30 dB 55 1.3 to 2.3 0.9 26 50 24 1 40 G fT 45 22 1.8 35 20 30 18 2.4 16 3 25 0.8 0.5 20 14 15 0.3 12 10 5 6 10 5 0 0 4 10 20 30 40 50 60 70 80 mA 8 0 100 IC 10 20 30 40 50 60 70 mA 90 IC 5 2013-09-13 BFP620 Power Gain Gma, Gms = (f), Power gain Gma, Gms = (VCE ) |S21| = f (f) IC = 50mA VCE = 1.5V, IC = 50mA f = Parameter in GHz 55 30 0.9 dB dB 1.8 45 2.4 20 40 35 G G 3 4 5 6 15 30 Gms 10 25 20 Gma |S21| 5 15 0 10 5 0 1 2 3 4 GHz -5 0.2 6 0.6 1 1.4 1.8 V 2.6 VCE f Minimum noise figure NFmin = (IC) Minimum noise figure NFmin = (f) VCE = 2 V, ZS = ZSopt VCE = 2V, ZS = ZSopt 6 2013-09-13 BFP620 Source impedance for min. noise figure vs. frequency VCE = 2 V, IC = 6 mA / 50 mA 7 2013-09-13 BFP620 SPICE GP Model For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFP620 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 15 GHz using typical devices. The BFP620 SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. 8 2013-09-13 Package SOT343 9 BFP620 2013-09-13 BFP620 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 10 2013-09-13 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: BFP620H7764XTSA1