SIEMENS BCR 142 NPN Silicon Digital Transistor * Switching circuit, inverter, interface circuit, drver circuit Built in bias resistor (Ry=22kQ, Ro=47kQ) VPS0S161 Type Marking |Ordering Code |Pin Configuration Package BCR 142 |wZs_ _-|Qe2702-c2259 |1=B |2=E |3=C |SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VcEO 50 V Collector-base voltage VcBo 50 Emitter-base voltage Vespo 10 Input on Voltage Vion) 30 DC collector current Io 100 mA Total power dissipation, Tg = 102C Prot 200 mw Junction temperature Tj 150 C Storage temperature Tatg - 65... + 150 Therma! Resistance Junction ambient 1) RitnJa < 350 KAW Junction - soldering point Ainss < 240 1) Package mounted on peb 40mm x 40mm x 1.5mm / 6em? Cu Semiconductor Group 647 12,96SIEMENS BCR 142 Electrical Characteristics at T,;=25C, unless otherwise specified Parameter Symboi Values Unit min. |typ. |max. DC Characteristics Collector-emitter breakdown voltage Vier)cEO Vv Iq = 100 pA, ip = 0 50 - - Collector-base breakdown voltage ViBr)cBo lo = 10 YA, Ig =0 50 - - Collector cutoff current IcBo nA Vog = 40 V, fe = 0 - - 100 Emitter cutoff current leBo yA Veg = 10V, io =0 - - 227 DC current gain fre - Ic =5MA, Voe =5V 70 - - Collector-emitter saturation voltage 1) VoEsat Vv Ilo = 10 mA, lg =0.5 mA - - 0.3 Input off voltage Vicotf) Io = 100 pA, Vor =5V 0.5 - 1.2 Input on Voltage Vion} lo=2mA, Veg =0.3V 0.8 - 2.5 Input resistor A, 15 22 29 kQ Resistor ratio Fiy/Re 0.42 0.47 0.52 - AC Characteristics Transition frequency fr MHz Ilo =10 mA, Veg = 5 V, f= 100 MHz - 150 - Collector-base capacitance Cob pF Von = 10 V, f= 1 MHz - 3 - 1) Pulse test: t < 300us; D < 2% Semiconductor Group 648 12.96SIEMENS Dc Current Gain hre = f (Ic) Voge = 5V (common emitter configuration) 103 fee t 10? 104 10 10 10 mA a Input on Voltage Vion) = f(Ic) Vor = 0.3V (common emitter contiguration) Moo) Semiconductor Group 649 BCR 142 Coliector-Emitter Saturation Voltage Voesat = fic), hee = 20 102 101 10 0.0 0.2 0.4 0.6 v 1.0 al Vogaat Input off voltage Vyof) = Alc) Voge = 5V (common emitter configuration) 0.0 a5 1.0 15 v 25 Mion 12.96SIEMENS BCR 142 Total power dissipation P,.; = f (Ta*; Ts) * Package mounted on epoxy 300 NA 150 N \ . \ 50 \ 0 0 20 40 60 80 100 120 C 150 w 1,7 Permissible Pulse Load Ripys = tp) Permissible Pulse Load Protmax / Ptotoc = K'p) 103 Sa Hi SSC ie HN KC Anis 102 101 a nH CN TT PAU UI TIM | UU UT woe 0* 10 107 4 Semiconductor Group 650 12.96