Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol Ty
p
Max
64 83
89 120
RθJL 53 70
Junction and Storage Temperature Range
A
PD
°C
1.5
0.96
-55 to 150
TA=70°C
ID
7.5
6
30
Pulsed Drain Current B
Power Dissipation A
TA=25°C
Continuous Drain
Current A
Maximum UnitsParameter
TA=25°C
TA=70°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V±12Gate-Source Voltage
Drain-Source Voltage 20
°C/W
Maximum Junction-to-Ambient ASteady-State °C/W
W
Maximum Junction-to-Lead CSteady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient At ≤ 10s RθJA
AO8814
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
Features
VDS (V) = 20V
ID = 7.5 A (VGS = 10V)
RDS(ON) < 16mΩ (VGS = 10V)
RDS(ON) < 18mΩ (VGS = 4.5V)
RDS(ON) < 24mΩ (VGS = 2.5V)
RDS(ON) < 34mΩ (VGS = 1.8V)
ESD Rating: 2500V HBM
G1
S1
S1
D1/D2
G2
S2
S2
D1/D2
1
2
3
4
8
7
6
5
TSSOP-8
Top View
G1
D1
S1
G2
D2
S2
General Description
The AO8814 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration. Standard Product AO8814is Pb-
free (meets ROHS & Sony 259 specifications).
A
O8814L is a Green Product ordering option.
A
O8814 and AO8814L are electrically identical.
Alpha & Omega Semiconductor, Ltd.
AO8814
Symbol Min Typ Max Units
BVDSS 20 V
1
TJ=55°C 5
IGSS 10 µA
BVGSO ±12 V
VGS(th) 0.5 0.71 1 V
ID(ON) 30 A
13 16
TJ=125°C 18 22
15 18 mΩ
19 24 mΩ
26 34 mΩ
gFS 30 S
VSD 0.74 1 V
IS2.5 A
Ciss 1390 pF
Coss 190 pF
Crss 150 pF
Rg1.5 Ω
Qg15.4 nC
Qgs 1.4 nC
Qgd 4nC
tD(on) 6.2 ns
tr11 ns
tD(off) 40.5 ns
tf10 ns
trr 15 ns
Qrr 5.1 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Gate-Source Breakdown Voltage VDS=0V, IG=±250uA
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS=0V, VDS=10V, f=1MHz
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
VGS=5V, VDS=10V, RL=1.3Ω,
RGEN=3Ω
Gate resistance VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
VGS=4.5V, VDS=10V, ID=7.5A
Gate Source Charge
mΩ
VGS=2.5V, ID=6A
IS=1A,VGS=0V
VDS=5V, ID=7.5A
VGS=1.8V, ID=5A
VGS=4.5V, ID=7A
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS µA
Gate Threshold Voltage VDS=VGS ID=250µA
VDS=16V, VGS=0V
Zero Gate Voltage Drain Current
VDS=0V, VGS=±10VGate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=7.5A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=4.5V, VDS=5V
VGS=10V, ID=7.5A
Reverse Transfer Capacitance
IF=7.5A, dI/dt=100A/µs
A: The value of R
θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
Rev 2: June 2005
Alpha & Omega Semiconductor, Ltd.
AO8814
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
10
20
30
012345
VDS(Volts)
Figure 1: On-Regions Characteristi
cs
ID(A)
VGS =1.5V
VGS =2V
3V
4V
10V
0
5
10
15
20
0.0 0.5 1.0 1.5 2.0 2.5
VGS(Volts)
Figure 2: Transfer Characteristics
ID(A)
25°C
125°C
VDS=5V
0
10
20
30
40
50
0 5 10 15 20
ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON)(mΩ)
VGS =4.5V
VGS =2.5V
VGS =1.8V
VGS =10V
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Norm aliz e ON-Resistance
VGS=4.5V
VGS=2.5V
VGS=1.8V
ID=7A
ID=6A
ID=5A
VGS=10V
ID=7.5A
10
20
30
40
50
60
02468
VGS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON)(mΩ)
25°C
125°C
ID=7.5A
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0 0.2 0.4 0.6 0.8 1.0
VSD(Volts)
Figure 6: Body-Diode Characteristics
IS(A)
25°C
125°C
Alpha & Omega Semiconductor, Ltd.
AO8814
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
1
2
3
4
5
0 5 10 15 20
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS(Volts)
VDS=10V
ID=7.5A
0
400
800
1200
1600
2000
0 5 10 15 20
VDS(Volts)
Figure 8: Capacitance Characteristics
Capacitan ce (p F)
Ciss
Crss
Coss
0
10
20
30
40
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power (W)
TJ(Max)=150°C
TA=25°C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normaliz ed T ran sient
Thermal Resi stan ce
T
o
nT
P
D
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=83°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
1.0
10.0
100.0
0.1 1 10 100
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
µ
s
10ms
1m
s
0.1s
1s
1
D
C
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
10
µ
s
Alpha & Omega Semiconductor, Ltd.