© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 7
1Publication Order Number:
MMBFJ175LT1/D
MMBFJ175LT1G
JFET Chopper
P−Channel − Depletion
Features
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Gate Voltage VDG 25 V
Reverse Gate−Source Voltage VGS(r) −25 V
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate −Source Breakdown Voltage
(VDS = 0, ID = 1.0 mA)
V(BR)GSS 30 −V
Gate Reverse Current
(VDS = 0 V, VGS = 20 V)
IGSS −1.0 nA
Gate −Source Cutoff Voltage
(VDS = 15, ID = 10 nA)
VGS(OFF) 3.0 6.0 V
ON CHARACTERISTICS
Zero Gate−Voltage Drain Current (Note 2)
(VGS = 0, VDS = 15 V)
IDSS 7.0 60 mA
Drain Cutoff Current
(VDS = 15 V, VGS = 10 V)
ID(off) −1.0 nA
Drain Source On Resistance
(ID = 500 mA)
rDS(on) −125 W
Input Capacitance VDS = 0, VGS = 10V
f = 1.0 MHz
Ciss −11
pF
Reverse Transfer
Capacitance
Crss −5.5
Product parametric performance is indicated in the Electrical Characteristics for
the listed test conditions, unless otherwise noted. Product performance may not
be indicated by the Electrical Characteristics if operated under different
conditions.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
www.onsemi.com
SOT−23 (TO−236)
CASE 318
STYLE 10
1
2
3
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
6W M G
G
6W = Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
2 SOURCE
3
GATE
1 DRAIN
Device Package Shipping†
ORDERING INFORMATION
MMBFJ175LT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SMMBFJ175LT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
MMBFJ175LT1G
http://onsemi.com
2
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T____
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
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MMBFJ175LT1/D
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