Description/Features
TRANZAP’s are silicon PN junction diodes designed,
manufactured and specified as Transient Voltage Suppressors
having a non-linear current-voltage characteristic which
sustains an almost constant voltage over a wide range of
current. They are ideally suited to many transient voltage
protection applications and their high clamping efficiency and
low steady state power dissipation offer considerable circuit
advantages over most existing methods of protection.
During operation, the ZAP idles at a low current level at the
nominal voltage. When a transient voltage occurs, ZAP
current increases rapidly, its voltage remaining virtually con-
stant, and the transient energy content is thus absorbed.
Repetitive surge capability
Peak pulse power is fixed under non-repetitive conditions.
However, in practical use, there are cases when the surge is
often repeatedly applied.
In this case, even though the one pulse power remains
within the peak pulse power, the power is accumulative and
exceeds the peak pulse power in some cases.
Response time
Response time of psec order however, in its operating
response time, it depends largely on the influence of
capacitance, and the effect of the response time with respect
to the clamping voltages is negligible.
Capacitance
Capacitance is determined by the area of a silicon chip and
the breakdown voltage. The capacitance decreases as the
bias voltage increases as shown in Figure 8.
Taping
Standard taping is available upon request.
Forming
Standard forming is available upon request.
Features
■High surge current capability
■Excellent voltage clamping (1.2 @ 50% peak power)
■Symmetrical characteristic - use on AC or DC (bipolar)
■Instantaneous response (pico- second order)
■Low idling current (5
m
-Amps)
Applications
■Protection of all types of semiconductors
■Absorption of surges associated with lightning
■Suppression of switching surges
■Protection in inductive switching circuits
■Prolongation of contact life
■Voltage clipping
Construction
ZAP construction features
PN junctions on both faces
of a silicon chip and has
been sufficiently designed
for thermal dissipation of
high surge power in a short
period of time.
Lead wire
Epoxy resin
Header
Solder
Silicon chip
Surge suppression characteristics
Surge suppression is shown in Figure 2 when
standard surge is applied to test circuit of Figure 3.
Electrical characteristics
Figure 4 shows an almost symmetrical breakdown voltage
(V
B
) ratio between
forward (V
BF
) and
reverse breakdown
voltage (V
BR
).
Typically
0.9 1.10
V
BF
V
BR
<
=<
=
Stand-off voltage
TRANZAP’s are designed for transient voltage suppression, it
is not preferable to consume power at the operating voltage.
Stand-off voltage is fixed to be of a value 0.9 times the
minimum breakdown voltage.
Leakage current
The current when the stand-off voltage is applied is fixed as
the maximum leakage current. This leakage current is an
important factor when used in circuits with high impedance.
Breakdown voltage
The terminal voltage when a test current is passed, is fixed
to be the breakdown voltage. The breakdown voltage is
measured in air 25°C. The test current is normally 1 mA .
Continuous operating power
The PN junction temperature is determined by the
following equation:
Tj=(P
q)
+Ta
P: Applied power
Thermal resistance
Ta: Ambient temperature
Where,
q
is thermal resistance from the PN junction to
ambient space and is determined by following equation:
q
=(1/K)x(L/S)
K: Thermal conductivity
L: Length of lead wire
S: Sectional area of lead wire
In case of Ta=50°C, Tj = 150°C, the maximum
operating power is as follows:
Z1 type: 500m Watts
Z2 type: 1 Watt
Z6 type: 3 Watts
Surge capability
Surge capability (P) is determined by the following equation:
P=ƒi(t)(V(t)dt)
it : Pulse current wave
Vt : clamping voltage wave
Allowable surge capability (Pm) is determined by the
following equation:
Pm=IPx VC
IP: Peak current
VC: Maximum clamping voltage
The allowable surge capability (peak pulse power) is as
shown in Figure 5 and the surge capability derating
characteristic as shown in Figure 6.
Peak current
Test pulse wave form
Test pulse
ROZAP
R1
V(t)
105
104
103
102
10
100
80
60
40
20
Z6 Type
Z1 Type
Peak pulse power (w)
Power ratio (%)
Z2 Type
10-4 10-3 10-2 10-1 11010
2
Time (msec)
20 40 50 80 100 120 140
Ambient temperature (°C)
I(t)
VC
lp
Maximum clamping voltage
Clamping voltage waveform
Current
Voltage
Time
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
VC
VB
VB
VS
ILIT
VS: Stand-off voltage
VB: Break down voltage
VC: Maximum clamping voltage
IL: Maximum leakage current
IT: Test current
IP: Peak pulse current
ITIP
1 2 5 10 20 50 100 200 500 1000 2000 5000 10000
Repeating time (msec)
Pulse power ratio (%)
100
90
80
70
60
50
40
30
20
10
O Bias
1nF
100PF
10PF
O Bias
O Bias
70% Bias
Z6 Type
Capacitance
Z2 Type
Z1 Type
Break down voltage (V)
15 20 30 40 50 60 80 100 200
50% Bias
Figure 7
Figure 8
CKE ■P.O. Box 211 ■Lucernemines, PA ■Phone (724) 479-3533 ■Fax (724) 479-3537 ■www.cke.com ■info@cke.com
Stand-off Maximum Breakdown Test Maximum clamping voltage & Max
Bi-polar voltage leakage voltage current Maximum peak pulse current temp.
type current 10/1000 msec 8/20 msec coef. of
VSITVCIPVCIPVB
VI
LVBmA V A V A %/°C
Z1015 12.1 5 13.5–16.5 1 22.0 11.4 28.5 106 0.076
Z1018 14.5 5 16.2–19.8 1 26.5 9.43 34.4 88.0 0.079
Z1022 17.8 5 19.8–24.2 1 31.9 7.84 41.4 73.1 0.082
Z1027 21.8 5 24.3–29.7 1 39.1 6.39 50.7 59.7 0.085
Z1033 26.8 5 29.7–36.3 1 47.7 5.24 61.8 49.0 0.087
Z1039 31.6 5 35.1–42.9 1 56.4 4.43 73.1 41.4 0.090
Z1047 38.1 5 42.3–51.7 1 67.8 3.69 88.1 34.4 0.092
Z1056 45.4 5 50.4–61.6 1 80.5 3.11 10.4 29.1 0.094
Z1068 55.1 5 61.2–74.8 1 98.0 2.55 127 23.8 0.096
Z1082 66.4 5 73.8–90.2 1 118 2.12 153 19.8 0.099
Z1100 81.0 5 90.0–110 1 144 1.74 187 16.2 0.101
Z1120 97.2 5 108–132 1 173 1.45 224 13.5 0.103
Z1150 121 5 135-165 1 215 1.16 279 10.8 0.105
Stand-off Maximum Breakdown Test Maximum clamping voltage &
Bi-polar Uni-polar voltage leakage voltage current Maximum peak pulse current
type type current 10/1000 msec 8/20 msec
VSILVBITVCIPVCIP
VmAVmAVAVA
Z2008 Z2008U 6.63 500 7.38–9.02 10 12.5 48.0 16.2 449
Z2010 Z2010U 8.10 10 9.00–11.0 1 15.0 40.0 19.4 375
Z2012 Z2012U 9.72 5 10.8–13.2 1 17.3 34.6 22.4 325
Z2015 Z2015U 12.1 5 13.5–16.5 1 22.0 27.2 28.5 255
Z2018 Z2018U 14.5 5 16.2–19.8 1 26.5 22.6 34.4 298
Z2022 Z2022U 17.8 5 19.8–24.2 1 31.9 18.8 41.4 175
Z2027 Z2027U 21.8 5 24.3–29.7 1 39.1 15.3 50.7 143
Z2033 Z2033U 26.8 5 29.7–36.3 1 47.7 12.5 61.8 117
Z2039 Z2039U 31.6 5 35.1–42.9 1 56.4 10.6 73.1 99.5
Z2047 Z2047U 38.1 5 42.3–51.7 1 67.8 8.84 78.9 92.2
Z2056 Z2056U 45.4 5 50.4–61.6 1 80.5 7.45 104 70.0
Z2068 Z2068U 55.1 5 61.2–74.8 1 98.0 6.12 127 60.6
Z2082 Z2082U 66.4 5 73.8–90.2 1 118 5.08 153 47.5
Z2100 Z2100U 81.0 5 90.0–110 1 144 4.16 187 38.9
Z2120 Z2120U 97.2 5 108–132 1 173 3.46 224 32.5
Z2150 Z2150U 121 5 135–165 1 215 2.79 279 26.0
Z2180 Z2180U 146 5 162–198 1 258 2.32 335 21.7
Stand-off Maximum Breakdown Test Maximum clamping voltage &
Bi-polar Uni-polar voltage leakage voltage current Maximum peak pulse current
type type current 10/1000 msec 8/20 msec
VSILVBITVCIPVCIP
VmAVmAVAVA
– Z6008U 6.63 500 7.38–9.02 10 12.5 120 16.2 1124
Z6010 Z6010U 8.10 10 9.00–11.0 1 15.0 100 19.4 938
Z6012 Z6012U 9.72 5 10.8–13.2 1 17.3 87 22.4 813
Z6015 Z6015U 12.1 5 13.5–16.5 1 22.0 68 28.5 639
Z6018 Z6018U 14.5 5 16.2–19.8 1 26.5 56 34.4 529
Z6022 Z6022U 17.8 5 19.8–24.2 1 31.9 47 41.4 440
Z6027 Z6027U 21.8 5 24.3–29.7 1 39.1 38 50.7 359
Z6033 Z6033U 26.8 5 29.7–36.3 1 47.7 31 61.8 295
Z6039 Z6039U 31.6 5 35.1–42.9 1 56.4 26 73.1 249
Z6047 Z6047U 38.1 5 42.3–51.7 1 67.8 22.2 78.9 231
Z6056 Z6056U 45.4 5 50.4–61.6 1 80.5 18.6 104 175
Z6068 Z6068U 55.1 5 61.2–74.8 1 98.0 15.3 127 143
Z6082 Z6082U 66.4 5 73.8–90.2 1 118 12.7 153 119
Z6100 Z6100U 81.0 5 90.0–110 1 144 10.4 187 97.4
Z6120 Z6120U 97.2 5 108–132 1 173 8.7 224 81.3
Z6150 Z6150U 121 5 135–165 1 215 7.0 279 65.2
VZ±10% and Bi-polar
Note: Nonsuffix: VZ±10% and Bi-polar, suffix “U”: Uni-polar
Note: Nonsuffix: VZ±10% and Bi-polar, suffix “U”: Uni-polar
Maximum ratings
Peak pulse power: 250 watt (10 x 1,000 msec)
3.03 KWatt (8 x 20 msec)
Steady state power dissipation:
500 mWatts
Operating and storage temperature:
-40°C to 150°C
Symbol mark
Maximum ratings
Peak pulse power: 1.5 KWatt (10 x 1,000msec)
18.2 KWatt (8 x 20msec)
Steady state power dissipation:
3 Watts
Operating and storage temperature:
-40°C to 150°C
Symbol mark
26±2
5.3±0.5
Type No. & Lot No.
Cathode mark Epoxy resin
1
f
Soldered copper wire
9±0.5
Maximum ratings
Peak pulse power: 600 Watt (10/1,000msec)
7.28 KWatt (8/20msec)
Steady state power dissipation:
1 Watt
Operating and storage temperature:
-40°C to 150°C
Symbol mark
27.5±1
3.6±0.3
Type No. & Lot No.
Cathode mark Epoxy resin
0.8
f
Soldered copper wire
6±0.3
27.5±1
3.6±0.3
Type No. & Lot No.
Cathode mark Epoxy resin
0.8
f
Soldered copper wire
6±0.3
Z1 type (Bidirectional)
Z2 type
Z6 type
