SEME 2N2222ACSM4 LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) FEATURES * SILICON PLANAR EPITAXIAL NPN TRANSISTOR 1.40 0.15 (0.055 0.006) 5.59 0.13 (0.22 0.005) * HERMETIC CERAMIC SURFACE MOUNT PACKAGE 0.23 rad. (0.009) 3 2 4 1 1.27 0.05 (0.05 0.002) 0.64 0.08 (0.025 0.003) 3.81 0.13 (0.15 0.005) 0.25 0.03 (0.01 0.001) * CECC SCREENING OPTIONS 0.23 min. (0.009) * SPACE QUALITY LEVELS OPTIONS * HIGH SPEED SATURATED SWITCHING 2.03 0.20 (0.08 0.008) 1.02 0.20 (0.04 0.008) APPLICATIONS: LCC3 PACKAGE Underside View PAD 1 - Collector PAD 3 - Emitter PAD 2 - N/C PAD 4 - Base Hermetically sealed surface mount version of the popular 2N2222A for high reliability / space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO VCEO VEBO IC PD PD Rja Tstg Semelab plc. Collector - Base Voltage Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage (IB = 0) Collector Current Total Device Dissipation Derate above 50C Thermal Resistance Junction to Ambient Storage Temperature Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk 75V 40V 6V 800mA 350mW 2.0mW / C 350C/W -55 to 200C Prelim. 4/99 SEME 2N2222ACSM4 LAB ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit VCEO(sus)* Collector - Emitter Sustaining Voltage IC = 10mA 40 V V(BR)CBO* Collector - Base Breakdown Voltage IC = 10A 75 V V(BR)EBO* Emitter - Base Breakdown Voltage IE = 10A IC = 0 6 V ICEX* Collector Cut-off Current (IC = 0) IB = 0 VCE = 60V 10 nA ICBO* Collector - Base Cut-off Current IE = 0 VCB = 60V 10 nA 10 A IEBO* Emitter Cut-off Current (IC = 0) IC = 0 VEB = 3V (off) 10 nA IBL* Base Current VCE = 60V VEB = 3V (off) 20 nA VCE(sat)* Collector - Emitter Saturation Voltage IC = 150mA IB = 15mA 0.3 IC = 500mA IB = 50mA 1 VBE(sat)* Base - Emitter Saturation Voltage IC = 150mA IB = 15mA IC = 500mA IC = 50mA IC = 0.1mA VCE = 10V 35 IC = 1mA VCE = 10V 50 IC = 10mA VCE = 10V 75 TA = -55C IC = 10mA VCE = 10V 35 IC = 150mA VCE = 10V 100 IC = 150mA VCE = 1V 50 IC = 500mA VCE = 10V 40 hFE* TC = 125C DC Current Gain 0.6 1.2 2 V V -- 300 * Pulse test tp = 300s , 2% DYNAMIC CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit fT Transition Frequency IC = 20mA VCE = 20V f = 100MHz 300 MHz Cob Output Capacitance VCB = 10V IE = 0 f = 1.0MHz 8 pF Cib Input Capacitance VBE = 0.5V IC = 0 f = 1.0MHz 30 pF hfe Small Signal Current Gain IC = 1mA VCE = 10V f = 1kHz 50 300 IC = 10mA VCE = 10V f = 1kHz 75 375 SWITCHING CHARACTERISTICS (RESISTIVE LOAD) (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit td Delay Time VCC = 30V VBE = 0.5V (off) 10 ns tr Rise Time IC1 = 150mA IB1 = 15mA 25 ns ts Storage Time VCC = 30V IC = 150mA 225 ns tf Fall Time 60 ns IB1 = IB2 = 15mA fT is defined as the frequency at which hFE extrapolates to unity. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 4/99