AH312 2 Watt, High Linearity InGaP HBT Amplifier Product Features Product Description * 400 - 2300 MHz * +51 dBm Output IP3 * 18 dB Gain @ 900 MHz * 11 dB Gain @ 1960 MHz * Single Positive Supply (+5V) * SOIC-8 SMT Package Applications * Final stage amplifiers for Repeaters * Mobile Infrastructure * Defense / Homeland Security The AH312 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. An internal active bias allows the AH312 to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations. Specifications (1) Test Frequency S21 - Gain S11 - Input R.L. S22 - Output R.L. Output P1dB Output IP3 (2) IS-95A Channel Power @ -45 dBc ACPR, 1960 MHz W-CDMA Channel Power @ -45 dBc ACLR, 2140 MHz Noise Figure Operating Current Range, Icc (3) Device Voltage, Vcc Functional Diagram The AH312 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowband-tuned application circuits with up to +49 dBm OIP3 and +33 dBm of compressed 1dB power. It is housed in an industry standard SOIC-8 SMT package. All devices are 100% RF and DC tested. * +33 dBm P1dB Parameter Product Information 1 8 2 7 3 6 4 5 Function Vref Input Output Vbias GND N/C or GND Pin No. 1 3 6, 7 8 Backside Paddle 2, 4, 5 Typical Performance (4) Units Min MHz dB dB dB dBm dBm Typ Max Parameter Units dBm +27.5 Frequency S21 - Gain S11 - Input R.L. S22 - Output R.L. Output P1dB Output IP3 IS-95A Channel Power dBm +25.3 W-CDMA Channel Power dB mA V 7.7 800 +5 9 +32 +47 700 2140 10 -20 -6.8 +33.2 +48 @ -45 dBc ACPR @ -45 dBc ACLR 900 Noise Figure Device Bias (3) Typical MHz dB dB dB dBm dBm 900 18 -18 -11 +33 +49 1960 11 -19 -6.8 +33.4 +51 dBm +27 +27.5 dBm dB 2140 10 -20 -6.8 +33.2 +48 +25.3 8.0 7.3 7.7 +5 V @ 800 mA 4. Typical parameters reflect performance in a tuned application circuit at+25 C. Test conditions unless otherwise noted. 1. T = 25C, Vsupply = +5 V, Frequency = 2140 MHz, in tuned application circuit. 2. 3OIP m easured with two tones at an output power of +17 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 200 mA at P1dB. Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 22mA of current when used with a series bias resistor of R1=15. (ie. total device current typically will be 822 mA.) Absolute Maximum Rating Ordering Information Parameters Rating Part No. Description Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power -40 to +85 C -65 to +150 C +28 dBm +8 V 1400 mA 8W AH312-S8 AH312-S8PCB900 AH312-S8PCB1960 AH312-S8PCB2140 2 Watt, High Linearity InGaP HBT Amplifier 900 MHz Evaluation Board 1960 MHz Evaluation Board 2140 MHz Evaluation Board Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800- WJ1-4401 * FAX: 408-577-6621 * e- mail: sales@wj.com * Web site: www.wj.com August 2004 AH312 2 Watt, High Linearity InGaP HBT Amplifier Product Information Typical Device Data S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25C, unmatched 50 ohm system) 0. 8 6 0. 2. 0 0. 4 30 0 3. 0 3. 0 4. 0 4. 25 5.0 5.0 0.2 0.2 20 10.0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 0.2 15 0.2 10.0 10 5 -10.0 -10.0 -4 .0 -5. 0 -3 .0 .0 -2 .4 -0 Swp Min 0.05GHz Swp Min 0.05GHz -1.0 -0.8 -0 .6 2.5 .0 -2 2 -0.8 1 1.5 Frequency (GHz) -1.0 0.5 -0 .6 0 -3 .0 .4 -0 -10 2 -0. -4 .0 2 -0. 0 -5 -5. 0 Gain (dB) Swp Max 3GHz 2. 0 DB(GMax) 1.0 1.0 0. 8 6 0. Swp Max 3GHz 0. 4 DB(|S[2,1]|) 35 S22 S11 Gain / Maximum Stable Gain 40 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance plots are shown from 50 - 3000 MHz, with markers placed at 0.5 - 3.0 GHz in 0.5 GHz increments. S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -0.86 -0.64 -0.68 -0.76 -0.93 -1.15 -1.50 -2.39 -4.47 -11.96 -8.66 -2.76 -1.21 -0.68 -0.43 -0.32 -0.29 -178.06 178.18 172.85 164.33 155.56 146.04 134.58 121.66 104.01 86.06 -179.11 159.91 142.90 130.93 121.91 114.61 108.16 27.55 22.16 16.13 10.61 7.46 5.78 4.87 4.74 5.33 5.96 4.41 0.53 -3.21 -7.27 -10.41 -13.28 -15.94 113.72 98.81 89.06 77.31 67.94 57.62 46.90 32.96 14.01 -17.55 -56.78 -89.86 -107.99 -123.14 -134.93 -143.22 -149.93 -45.75 -45.46 -42.65 -43.96 -41.17 -41.65 -40.36 -40.22 -38.97 -38.96 -39.35 -43.55 -41.56 -42.46 -39.71 -40.99 -39.65 30.91 12.80 6.09 4.69 6.70 -5.78 -7.84 -16.51 -48.82 -86.32 -144.53 145.94 104.25 73.64 64.28 58.20 48.40 -0.38 -0.38 -0.48 -0.48 -0.61 -0.66 -0.71 -0.80 -0.76 -0.60 -0.52 -0.41 -0.54 -0.68 -0.73 -0.73 -0.79 -130.98 -157.30 -172.51 177.51 173.63 170.49 169.31 168.22 167.91 170.63 167.41 164.50 160.11 157.84 154.66 151.14 147.52 Application Circuit PC Board Layout Circuit Board Material: .014" Getek, single layer, 1 oz copper, Microstrip line details: width = .026", spacing = .026" The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as placemarkers for the input and output tuning shunt capacitors - C8 and C9. The markers and vias are spaced in .050" increments. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800- WJ1-4401 * FAX: 408-577-6621 * e- mail: sales@wj.com * Web site: www.wj.com August 2004 AH312 2 Watt, High Linearity InGaP HBT Amplifier Product Information 900 MHz Application Circuit (AH312-S8PCB900) Typical RF Performance at 25C Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3 900 MHz 18 dB -18 dB -11 dB +33 dBm +49 dBm (+17 dBm / tone, 1 MHz spacing) Channel Power (@-45 dBc ACPR, IS-95 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current (1) +27 dBm 8.0 dB +5 V 800 mA 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. S11 vs. Frequency 0 19 -5 +25C -40C +85C 17 -10 S22 (dB) 18 -15 -20 -10 -15 16 +25C 15 840 S22 vs. Frequency 0 -5 S11 (dB) S21 (dB) S21 vs. Frequency 20 860 -40C 880 -25 +85C 900 920 -30 840 940 +25C 860 Frequency (MHz) 880 900 920 -20 840 940 Noise Figure vs. Frequency P1dB vs. Frequency 34 6 4 2 860 880 +25C 900 -40C +85C 920 940 +25C -50 -60 +85C -40 C 860 880 900 920 22 940 OIP3 vs. Frequency OIP3 vs. Temperature 45 940 35 -40 27 28 29 24 26 45 40 920 26 OIP3 (dBm) 50 OIP3 (dBm) 50 OIP3 (dBm) 50 880 900 Frequency (MHz) 25 freq. = 900 MHz, 901 MHz, +25 C 55 860 24 OIP3 vs. Output Power freq. = 900 MHz, 901 MHz, +17 dBm/tone 55 40 +85 C Output Channel Power (dBm) 55 35 840 23 Frequency (MHz) 45 +25 C -70 Frequency (MHz) +25 C, +17 dBm/tone 940 ACPR vs. Channel Power 30 26 840 920 IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW, 900 MHz 32 28 -40C 900 -40 ACPR (dBc) 8 P1dB (dBm) NF (dB) 36 880 +85C Frequency (MHz) Circuit boards are optimized at 880 MHz 10 0 840 860 Frequency (MHz) -40C 40 35 -15 10 35 Temperature (C) 60 85 12 14 16 18 20 22 Output Power (dBm) Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800- WJ1-4401 * FAX: 408-577-6621 * e- mail: sales@wj.com * Web site: www.wj.com August 2004 AH312 2 Watt, High Linearity InGaP HBT Amplifier Product Information 1960 MHz Application Circuit (AH312-S8PCB1960) Typical RF Performance at 25C Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3 1960 MHz 11 dB -20 dB -6.8 dB +33.4 dBm +51 dBm (+17 dBm / tone, 1 MHz spacing) Channel Power +27.5 dBm (@-45 dBc ACPR, IS-95 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current (1) 7.3 dB +5 V 800 mA 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. S11 vs. Frequency 0 12 -5 S22 vs. Frequency 0 +25C -40C +85C -5 11 10 -10 S22 (dB) S11 (dB) S21 (dB) S21 vs. Frequency 13 -15 -20 -10 -15 9 +25C 8 1930 1940 -40C 1950 -25 +85C 1960 1970 1980 -30 1930 1990 +25C 1940 Frequency (MHz) 1950 1960 1970 1980 -20 1930 1990 Noise Figure vs. Frequency P1dB vs. Frequency 34 6 4 2 0 1930 ACPR vs. Channel Power 30 1940 1950 1960 1970 -40C +85C 1980 26 1930 1990 +25C -45 -55 -65 +85C -40 C 1940 1950 1960 1970 1980 22 1990 OIP3 vs. Frequency 45 35 -40 28 29 45 40 1990 27 OIP3 (dBm) OIP3 (dBm) 50 OIP3 (dBm) 50 1980 26 OIP3 vs. Output Power 50 1950 1960 1970 Frequency (MHz) 25 freq. = 1960 MHz, 1961 MHz, +25 C 55 1940 24 OIP3 vs. Temperature 55 35 1930 23 freq. = 1960 MHz, 1961 MHz, +17 dBm/tone 55 40 +85 C Output Channel Power (dBm) Frequency (MHz) 45 +25 C -75 Frequency (MHz) +25 C, +17 dBm/tone 1990 IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW, 1960 MHz 32 28 +25C 1960 1970 1980 -35 ACPR (dBc) 8 P1dB (dBm) NF (dB) 36 1950 +85C Frequency (MHz) Circuit boards are optimized at 1960 MHz 10 -40C 1940 Frequency (MHz) -40C 40 35 -15 10 35 Temperature (C) 60 85 12 14 16 18 Output Power (dBm) 20 22 Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800- WJ1-4401 * FAX: 408-577-6621 * e- mail: sales@wj.com * Web site: www.wj.com August 2004 AH312 2 Watt, High Linearity InGaP HBT Amplifier Product Information 2140 MHz Application Circuit (AH312-S8PCB2140) Typical RF Perfor mance at 25C Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3 2140 MHz 10 dB -20 dB -6.8 dB +33.2 dBm +48 dBm (+17 dBm / tone, 1 MHz spacing) W-CDMA Channel Power +25.3 dBm (@ -45 dBc ACLR) Noise Figure Device / Supply Voltage Quiescent Current (1) 7.7 dB +5 V 800 mA 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. S11 vs. Frequency 0 11 -5 +25C -40C +85C 9 -10 S22 (dB) 10 -15 -20 -10 -15 8 +25C 7 2110 2120 -40C 2130 -25 +85C 2140 2150 2160 -30 2110 2170 +25C 2120 Frequency (MHz) 2130 2140 2150 2160 -20 2110 2170 ACPR vs. Channel Power 0 2110 ACPR (dBc) -40 P1dB (dBm) 34 32 30 28 2120 2130 +25C 2140 2150 -40C +85C 2160 26 2110 2170 +25C -45 -50 -55 +85C -40 C 2120 2130 2140 2150 2160 2170 22 Frequency (MHz) 24 25 26 OIP3 vs. Temperature OIP3 vs. Output Power +25 C, +17 dBm/tone freq. = 2140 MHz, 2141 MHz, +17 dBm/tone freq. = 2140 MHz, 2141 MHz, +25 C 50 50 45 45 40 2130 2140 2150 Frequency (MHz) 2160 2170 35 -40 27 OIP3 (dBm) 50 OIP3 (dBm) 55 OIP3 (dBm) 55 2120 23 OIP3 vs. Frequency 40 +85 C Output Channel Power (dBm) 55 35 2110 +25 C -60 Frequency (MHz) 45 2170 3GPP W-CDMA, Test Model 1+64 DPCH, 5 MHz offset, 2140 MHz 8 2 2140 2150 2160 P1dB vs. Frequency -35 4 +85C Circuit boards are optimized at 2140 MHz 36 6 2130 -40C Frequency (MHz) 10 -40C 2120 Frequency (MHz) Noise Figure vs. Frequency NF (dB) S22 vs. Frequency 0 -5 S11 (dB) S21 (dB) S21 vs. Frequency 12 40 35 -15 10 35 Temperature (C) 60 85 12 14 16 18 Output Power (dBm) 20 22 Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800- WJ1-4401 * FAX: 408-577-6621 * e- mail: sales@wj.com * Web site: www.wj.com August 2004 AH312 2 Watt, High Linearity InGaP HBT Amplifier Product Information Outline Drawing Product Marking The component will be marked with an "AH312-S8" designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the "Application Notes" section. ESD / MSL Information ESD Rating: Value: Test: Standard: Land Pattern Class 1B Passes between 500 and 1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +235 C convection reflow Standard: JEDEC Standard J-STD-020A Mounting Config. Notes Thermal Specifications Rating Operating Case Temperature Thermal Resistance1, Rth Junction Temperature2, Tjc -40 to +85 C 17.5 C / W 155 C Notes: 1. The thermal resistance is referenced from the junctionto-case at a case temperature of 85 C. Tjc is a function of the voltage at pins 6 and 7 and the current applied to pins 6, 7, and 8 and can be calculated by: Tjc = Tcase + Rth * Vcc * Icc 2. This corresponds to the typical biasing condition of +5V, 800 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C. MTTF vs. GND Tab Temperature 100000 MTTF (million hrs) Parameter 10000 1000 100 60 70 80 90 100 110 Tab Temperature (C) 120 1. A heatsink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8 All dimensions are in millimeters (inches). Angles are in degrees. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800- WJ1-4401 * FAX: 408-577-6621 * e- mail: sales@wj.com * Web site: www.wj.com August 2004