Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com August 2004
AH312
2 Watt, High Linearity InGaP HBT Amplifier Product Information
Product Features
• 400 – 2300 MHz
• +33 dBm P1dB
• +51 dBm Output IP3
• 18 dB Gain @ 900 MHz
• 11 dB Gain @ 1960 MHz
• Single Positive Supply (+5V)
• SOIC-8 SMT Package
Applications
• Final stage amplifiers for
Repeaters
• Mobile Infrastructure
• Defense / Homeland Security
Product Description
The AH312 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT
is able to achieve high performance for various
narrowband-tuned application circuits with up to +49
dBm OIP3 and +33 dBm of compressed 1dB power. It is
housed in an industry standard SOIC-8 SMT package.
All devices are 100% RF and DC tested.
The AH312 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
AH312 to maintain high linearity over temperature and
operate directly off a single +5V supply. This
combination makes the device an excellent candidate for
transceiver line cards in current and next generation
multi-carrier 3G base stations.
Functional Diagram
Function Pin No.
Vref 1
Input 3
Output 6, 7
Vbias 8
GND Backside Paddle
N/C or GND 2, 4, 5
Specifications (1)
Parameter Units
Min Typ Max
Test Frequency MHz 2140
S21 - Gain dB 9 10
S11 - Input R.L. dB -20
S22 - Output R.L. dB -6.8
Output P1dB dBm +32 +33.2
Output IP3 (2) dBm +47 +48
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz dBm +27.5
W-CDMA Channel Power
@ -45 dBc ACLR, 2140 MHz dBm +25.3
Noise Figure dB 7.7
Operating Current Range, Icc (3) mA 700 800 900
Device Voltage, Vcc V +5
Test conditions unless otherwise noted.
1. T = 25ºC, Vsupply = +5 V, Frequency = 2140 MHz, in tuned application circuit.
2. 3OIP m easured with two tones at an output power of +17 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increase by an additional 200 mA at P1dB. Pin
1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull
22mA of current when used with a series bias resistor of R1=15Ω. (ie. total device current
typically will be 822 mA.)
Typical Performance (4)
Parameter Units Typical
Frequency MHz 900 1960 2140
S21 – Gain dB 18 11 10
S11 – Input R.L. dB -18 -19 -20
S22 – Output R.L. dB -11 -6.8 -6.8
Output P1dB dBm +33 +33.4 +33.2
Output IP3 dBm +49 +51 +48
IS-95A Channel Power
@ -45 dBc ACPR dBm +27 +27.5
W-CDMA Channel Power
@ -45 dBc ACLR dBm +25.3
Noise Figure dB 8.0 7.3 7.7
Device Bias (3) +5 V @ 800 mA
4. Typical parameters reflect performance in a tuned application circuit at +25° C.
Absolute Maximum Rating Ordering Information
Parameters Rating Part No. Description
Operating Case Temperature -40 to +85 °C AH312-S8 2 Watt, High Linearity InGaP HBT Amplifier
Storage Temperature -65 to +150 °C AH312-S8PCB900 900 MHz Evaluation Board
RF Input Power (continuous) +28 dBm AH312-S8PCB1960 1960 MHz Evaluation Board
Device Voltage +8 V AH312-S8PCB2140 2140 MHz Evaluation Board
Device Current 1400 mA
Device Power 8 W
Operation of this device above any of these parameters may cause permanent damage.
1
2
3
4
8
7
6
5
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com August 2004
AH312
2 Watt, High Linearity InGaP HBT Amplifier Product Information
Typical Device Data
S-Parameters (V CC = +5 V, ICC = 800 mA, T = 25°C, unmatched 50 ohm system)
00.5 11.5 22.5
Frequency (GHz)
Gain / Maximum Stable Gain
-10
-5
0
5
10
15
20
25
30
35
40
Gain (dB)
DB(|S[2,1]|) DB(GMax)
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S11 Swp Max
3GHz
Swp Min
0.05GHz
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S22 Swp Max
3GHz
Swp Min
0.05GHz
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increments.
S-Parameters (V CC = +5 V, ICC = 800 mA, T = 25°C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 -0.86 -178.06 27.55 113.72 -45.75 30.91 -0.38 -130.98
100 -0.64 178.18 22.16 98.81 -45.46 12.80 -0.38 -157.30
200 -0.68 172.85 16.13 89.06 -42.65 6.09 -0.48 -172.51
400 -0.76 164.33 10.61 77.31 -43.96 4.69 -0.48 177.51
600 -0.93 155.56 7.46 67.94 -41.17 6.70 -0.61 173.63
800 -1.15 146.04 5.78 57.62 -41.65 -5.78 -0.66 170.49
1000 -1.50 134.58 4.87 46.90 -40.36 -7.84 -0.71 169.31
1200 -2.39 121.66 4.74 32.96 -40.22 -16.51 -0.80 168.22
1400 -4.47 104.01 5.33 14.01 -38.97 -48.82 -0.76 167.91
1600 -11.96 86.06 5.96 -17.55 -38.96 -86.32 -0.60 170.63
1800 -8.66 -179.11 4.41 -56.78 -39.35 -144.53 -0.52 167.41
2000 -2.76 159.91 0.53 -89.86 -43.55 145.94 -0.41 164.50
2200 -1.21 142.90 -3.21 -107.99 -41.56 104.25 -0.54 160.11
2400 -0.68 130.93 -7.27 -123.14 -42.46 73.64 -0.68 157.84
2600 -0.43 121.91 -10.41 -134.93 -39.71 64.28 -0.73 154.66
2800 -0.32 114.61 -13.28 -143.22 -40.99 58.20 -0.73 151.14
3000 -0.29 108.16 -15.94 -149.93 -39.65 48.40 -0.79 147.52
Application Circuit PC Board Layout
Circuit Board Material: .014” Getek, single layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning
shunt capacitors – C8 and C9. The markers and vias are spaced in .050” increments.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com August 2004
AH312
2 Watt, High Linearity InGaP HBT Amplifier Product Information
900 MHz Application Circuit (AH312-S8PCB900)
Typical RF Performance at 25°C
Frequency 900 MHz
S21 – Gain 18 dB
S11 – Input Return Loss -18 dB
S22 – Output Return Loss -11 dB
Output P1dB +33 dBm
Output IP3
(+17 dBm / tone, 1 MHz spacing) +49 dBm
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd) +27 dBm
Noise Figure 8.0 dB
Device / Supply Voltage +5 V
Quiescent Current (1) 800 mA
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 6, 7, and 8.
S21 vs. Frequency
15
16
17
18
19
20
840 860 880 900 920 940
Frequency (MHz)
S21 (dB)
+25°C -40°C +85°C
S11 vs. Frequency
-30
-25
-20
-15
-10
-5
0
840 860 880 900 920 940
Frequency (MHz)
S11 (dB)
+25°C -40°C +85°C
S22 vs. Frequency
-20
-15
-10
-5
0
840 860 880 900 920 940
Frequency (MHz)
S22 (dB)
+25°C
-40°C
+85°C
Noise Figure vs. Frequency
0
2
4
6
8
10
840 860 880 900 920 940
Frequency (MHz)
NF (dB)
-40°C
+25°C
+85°C
P1dB vs. Frequency
Circuit boards are optimized at 880 MHz
26
28
30
32
34
36
840 860 880 900 920 940
Frequency (MHz)
P1dB (dBm)
-40°C +25°C +85°C
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 900 MHz
-70
-60
-50
-40
22 23 24 25 26 27 28 29
Output Channel Power (dBm)
ACPR (dBc)
-40 C
+25 C
+85 C
OIP3 vs. Frequency
+25° C, +17 dBm/tone
35
40
45
50
55
840 860 880 900 920 940
Frequency (MHz)
OIP3 (dBm)
OIP3 vs. Temperature
freq. = 900 MHz, 901 MHz, +17 dBm/tone
35
40
45
50
55
-40 -15 10 35 60 85
Temperature (°C)
OIP3 (dBm)
OIP3 vs. Output Power
freq. = 900 MHz, 901 MHz, +25° C
35
40
45
50
55
12 14 16 18 20 22 24 26
Output Power (dBm)
OIP3 (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com August 2004
AH312
2 Watt, High Linearity InGaP HBT Amplifier Product Information
1960 MHz Application Circuit (AH312-S8PCB1960)
Typical RF Performance at 25°C
Frequency 1960 MHz
S21 – Gain 11 dB
S11 – Input Return Loss -20 dB
S22 – Output Return Loss -6.8 dB
Output P1dB +33.4 dBm
Output IP3
(+17 dBm / tone, 1 MHz spacing) +51 dBm
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd) +27.5 dBm
Noise Figure 7.3 dB
Device / Supply Voltage +5 V
Quiescent Current (1) 800 mA
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 6, 7, and 8.
S21 vs. Frequency
8
9
10
11
12
13
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
S21 (dB)
+25°C -40°C +85°C
S11 vs. Frequency
-30
-25
-20
-15
-10
-5
0
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
S11 (dB)
+25°C -40°C +85°C
S22 vs. Frequency
-20
-15
-10
-5
0
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
S22 (dB)
+25°C
-40°C
+85°C
Noise Figure vs. Frequency
0
2
4
6
8
10
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
NF (dB)
-40°C
+25°C
+85°C
P1dB vs. Frequency
Circuit boards are optimized at 1960 MHz
26
28
30
32
34
36
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
P1dB (dBm)
-40°C +25°C +85°C
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 1960 MHz
-75
-65
-55
-45
-35
22 23 24 25 26 27 28 29
Output Channel Power (dBm)
ACPR (dBc)
-40 C +25 C +85 C
OIP3 vs. Frequency
+25° C, +17 dBm/tone
35
40
45
50
55
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
OIP3 (dBm)
OIP3 vs. Temperature
freq. = 1960 MHz, 1961 MHz, +17 dBm/tone
35
40
45
50
55
-40 -15 10 35 60 85
Temperature (°C)
OIP3 (dBm)
OIP3 vs. Output Power
freq. = 1960 MHz, 1961 MHz, +25° C
35
40
45
50
55
12 14 16 18 20 22
Output Power (dBm)
OIP3 (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com August 2004
AH312
2 Watt, High Linearity InGaP HBT Amplifier Product Information
2140 MHz Application Circuit (AH312-S8PCB2140)
Typical RF Performance at 25°C
Frequency 2140 MHz
S21 – Gain 10 dB
S11 – Input Return Loss -20 dB
S22 – Output Return Loss -6.8 dB
Output P1dB +33.2 dBm
Output IP3
(+17 dBm / tone, 1 MHz spacing) +48 dBm
W-CDMA Channel Power
(@ -45 dBc ACLR) +25.3 dBm
Noise Figure 7.7 dB
Device / Supply Voltage +5 V
Quiescent Current (1) 800 mA
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 6, 7, and 8.
S21 vs. Frequency
7
8
9
10
11
12
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
S21 (dB)
+25°C -40°C +85°C
S11 vs. Frequency
-30
-25
-20
-15
-10
-5
0
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
S11 (dB)
+25°C -40°C +85°C
S22 vs. Frequency
-20
-15
-10
-5
0
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
S22 (dB)
+25°C
-40°C
+85°C
Noise Figure vs. Frequency
0
2
4
6
8
10
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
NF (dB)
-40°C
+25°C
+85°C
P1dB vs. Frequency
Circuit boards are optimized at 2140 MHz
26
28
30
32
34
36
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
P1dB (dBm)
-40°C +25°C +85°C
ACPR vs. Channel Power
3GPP W-CDMA, Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz
-60
-55
-50
-45
-40
-35
22 23 24 25 26 27
Output Channel Power (dBm)
ACPR (dBc)
-40 C
+25 C
+85 C
OIP3 vs. Frequency
+25° C, +17 dBm/tone
35
40
45
50
55
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
OIP3 (dBm)
OIP3 vs. Temperature
freq. = 2140 MHz, 2141 MHz, +17 dBm/tone
35
40
45
50
55
-40 -15 10 35 60 85
Temperature (°C)
OIP3 (dBm)
OIP3 vs. Output Power
freq. = 2140 MHz, 2141 MHz, +25° C
35
40
45
50
55
12 14 16 18 20 22
Output Power (dBm)
OIP3 (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com August 2004
AH312
2 Watt, High Linearity InGaP HBT Amplifier Product Information
Outline Drawing
Land Pattern
Thermal Specifications
Parameter Rating
Operating Case Temperature -40 to +85° C
Thermal Resistance1, Rth 17.5° C / W
Junction Temperature2, Tjc 155° C
Notes:
1. The thermal resistance is referenced from the junction-
to-case at a case temperature of 85° C. Tjc is a function
of the voltage at pins 6 and 7 and the current applied to
pins 6, 7, and 8 and can be calculated by:
Tjc = Tcase + Rth * Vcc * Icc
2. This corresponds to the typical biasing condition of +5V,
800 mA at an 85° C case temperature. A minimum
MTTF of 1 million hours is achieved for junction
temperatures below 247° C.
Product Marking
The component will be marked with an
“AH312-S8” designator with an alphanumeric
lot code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating: Class 1B
Value: Passes between 500 and 1000V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +235° C convection reflow
Standard: JEDEC Standard J-STD-020A
Mounting Config. Notes
1. A heatsink underneath the area of the PCB
for the mounted device is strictly required for
proper thermal operation. Damage to the
device can occur without the use of one.
2. Ground / thermal vias are critical for the
proper performance of this device. Vias
should use a .35mm (#80 / .0135”) diameter
drill and have a final plated thru diameter
of .25 mm (.010”).
3. Add as much copper as possible to inner and
outer layers near the part to ensure optimal
thermal performance.
4. Mounting screws can be added near the part
to fasten the board to a heatsink. Ensure that
the ground / thermal via region contacts the
heatsink.
5. Do not put solder mask on the backside of the
PC board in the region where the board
contacts the heatsink.
6. RF trace width depends upon the PC board
material and construction.
7. Use 1 oz. Copper minimum.
8 All dimensions are in millimeters (inches).
Angles are in degrees.
MTTF vs. GND Tab Temperature
100
1000
10000
100000
60 70 80 90 100 110 120
Tab Temperature (°C)
MTTF (million hrs)
