DTA144T series
PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
llOutline
Parameter Value VMT3 EMT3
VCEO -50V
IC-100mA
R147kΩ DTA144TM DTA144TE
(SC-105AA) SOT-416(SC-75A)
UMT3 SMT3
llFeatures
1) Built-In Biasing Resistor
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit) .
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set
for operation, making the circuit design easy.
5) Complementary NPN Types: DTC144T series
6) Lead Free/RoHS Compliant.
DTA144TUA DTA144TKA
SOT-323(SC-70) SOT-346(SC-59)
llInner circuit
llApplication B: BASE
Switching circuit, Inverter circuit, Interface circuit, C: COLLECTOR
Driver circuit E: EMITTER
llPackaging specifications
Part No. Package Package
size
Taping
code
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit.(pcs)
Marking
DTA144TM VMT3 1212 T2L 180 8 8000 96
DTA144TE EMT3 1616 TL 180 8 3000 96
DTA144TUA UMT3 2021 T106 180 8 3000 96
DTA144TKA SMT3 2928 T146 180 8 3000 96
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© 2012 ROHM Co., Ltd. All rights reserved. 1/7 20121023 - Rev.001
Not Recommended for
New Designs
DTA144T series Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol Values Unit
Collector-base voltage VCBO -50 V
Collector-emitter voltage VCEO -50 V
Emitter-base voltage VEBO -5 V
Collector current IC-100 mA
Power dissipation
DTA144TM
PD*1
150
mW
DTA144TE 150
DTA144TUA 200
DTA144TKA 200
Junction temperature Tj150 ℃
Range of storage temperature Tstg -55 to +150 ℃
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Collector-base breakdown
voltage BVCBO IC = -50μA -50 - - V
Collector-emitter breakdown
voltage BVCEO IC = -1mA -50 - - V
Emitter-base breakdown voltage BVEBO IE = -50μA -5 - - V
Collector cut-off current ICBO VCB = -50V - - -0.5 μA
Emitter cut-off current IEBO VEB = -4V - - -0.5 μA
Collector-emitter saturation voltage VCE(sat) IC / IB = -5mA / -0.5mA - - -0.3 V
DC current gain hFE VCE = -5V, IC = -1mA 100 250 600 -
Input resistance R1- 32.9 47 61.1 kΩ
Transition frequency fT*2 VCE = -10V, IE = 5mA,
f = 100MHz - 250 - MHz
*1 Each terminal mounted on a reference footprint
*2 Characteristics of built-in transistor
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© 2012 ROHM Co., Ltd. All rights reserved. 2/7 20121023 - Rev.001
Not Recommended for
New Designs
DTA144T series Datasheet
llElectrical characteristic curves(Ta=25℃℃)
Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics
Fig.3 DC Current gain vs. Collector Current Fig.4 Collector-emitter saturation voltage vs.
Collector Current
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© 2012 ROHM Co., Ltd. All rights reserved. 3/7 20121023 - Rev.001
Not Recommended for
New Designs
DTA144T series Datasheet
llDimensions
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© 2012 ROHM Co., Ltd. All rights reserved. 4/7 20121023 - Rev.001
Not Recommended for
New Designs
DTA144T series Datasheet
llDimensions
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved. 5/7 20121023 - Rev.001
Not Recommended for
New Designs
DTA144T series Datasheet
llDimensions
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved. 6/7 20121023 - Rev.001
Not Recommended for
New Designs
DTA144T series Datasheet
llDimensions
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved. 7/7 20121023 - Rev.001
Not Recommended for
New Designs
Not Recommended for
New Designs
