DTA144T series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) l Outline Parameter VCEO Value IC -100mA R1 47k VMT3 EMT3 or -50V DTA144TE SOT-416(SC-75A) e N co ew m m D es en ig de ns d f DTA144TM (SC-105AA) UMT3 l Features 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary NPN Types: DTC144T series 6) Lead Free/RoHS Compliant. SMT3 DTA144TUA SOT-323(SC-70) l Inner circuit l Application Switching circuit, Inverter circuit, Interface circuit, R B: BASE C: COLLECTOR E: EMITTER ot Driver circuit DTA144TKA SOT-346(SC-59) N l Packaging specifications Part No. DTA144TM DTA144TE DTA144TUA DTA144TKA Package Package size Taping code VMT3 EMT3 UMT3 SMT3 1212 1616 2021 2928 T2L TL T106 T146 www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 1/7 Reel size Tape width (mm) (mm) 180 180 180 180 8 8 8 8 Basic ordering unit.(pcs) Marking 8000 3000 3000 3000 96 96 96 96 20121023 - Rev.001 DTA144T series Datasheet l Absolute maximum ratings (Ta = 25C) Symbol Values Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V or Parameter IC Collector current -100 150 e N co ew m m D es en ig de ns d f DTA144TM mA Power dissipation DTA144TE 150 PD*1 DTA144TUA mW 200 DTA144TKA 200 Junction temperature Range of storage temperature Tj 150 Tstg -55 to +150 l Electrical characteristics (Ta = 25C) Values Parameter Symbol Conditions Unit Min. Typ. Max. BVCBO IC = -50A -50 - - V Collector-emitter breakdown voltage BVCEO IC = -1mA -50 - - V Emitter-base breakdown voltage BVEBO IE = -50A -5 - - V Collector cut-off current ICBO VCB = -50V - - -0.5 A Emitter cut-off current IEBO VEB = -4V - - -0.5 A VCE(sat) IC / IB = -5mA / -0.5mA - - -0.3 V hFE VCE = -5V, IC = -1mA 100 250 600 - 32.9 47 61.1 k - 250 - MHz ot R Collector-base breakdown voltage Collector-emitter saturation voltage N DC current gain Input resistance R1 Transition frequency f T*2 VCE = -10V, IE = 5mA, f = 100MHz *1 Each terminal mounted on a reference footprint *2 Characteristics of built-in transistor www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 2/7 20121023 - Rev.001 DTA144T series Datasheet l Electrical characteristic curves(Ta=25 ) Fig.2 Grounded emitter output characteristics e N co ew m m D es en ig de ns d f or Fig.1 Grounded emitter propagation characteristics Fig.4 Collector-emitter saturation voltage vs. Collector Current N ot R Fig.3 DC Current gain vs. Collector Current www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 3/7 20121023 - Rev.001 DTA144T series Datasheet N ot R e N co ew m m D es en ig de ns d f or l Dimensions www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 4/7 20121023 - Rev.001 DTA144T series Datasheet N ot R e N co ew m m D es en ig de ns d f or l Dimensions www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 5/7 20121023 - Rev.001 DTA144T series Datasheet N ot R e N co ew m m D es en ig de ns d f or l Dimensions www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 6/7 20121023 - Rev.001 DTA144T series Datasheet N ot R e N co ew m m D es en ig de ns d f or l Dimensions www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 7/7 20121023 - Rev.001 N R e N co ew m m D es en ig de ns d f ot or