IGBT Module IC25 = 30 A
VCES = 1200 V
VCE(sat)typ. = 2.6 V
Features
•Package with DCB ceramic base plate
•Isolation voltage 3000 V∼
•Planar glass passivated chips
•Low forward voltage drop
•Leads suitable for PC board
soldering
•UL registered, E 148688
Applications
•AC and DC motor control
•AC servo and robot drives
•power supplies
•welding inverters
Advantages
•Easy to mount with two screws
•Space and weight savings
•Improved temperature and power
cycling capability
•High power density
•Small and light weight
•Leads with expansion bend for
stress relief
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
ECO-PACTM 2
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Preliminary Data Sheet
Caution: These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
PSIG 25/12
PSI 25/12*
PSIS 25/12*
PSSI 25/12*
IGBTs
Symbol Conditions Maximum Ratings
VCES TVJ = 25°C to 150°C 1200 V
VGES ± 20 V
IC25 TC = 25°C 30 A
IC80 TC = 80°C 21 A
ICM VGE = ±15 V; RG = 82 Ω; TVJ = 125°C 35 A
VCEK RBSOA, Clamped inductive load; L = 100 µH VCES
tSC VCE = VCES; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C 10 µs
(SCSOA) non-repetitive
Ptot TC = 25°C 130 W
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) IC = 25 A; VGE = 15 V; TVJ = 25°C 2.6 3.3 V
TVJ = 125°C 2.9 V
VGE(th) IC = 0.6 mA; VGE = VCE 4.5 6.5 V
ICES VCE = VCES; VGE = 0 V; TVJ = 25°C 0.9 mA
TVJ = 125°C 3.7 mA
IGES VCE = 0 V; VGE = ± 20 V 100 nA
td(on) 100 ns
tr75 ns
td(off) 500 ns
tf70 ns
Eon 2.7 mJ
Eoff 2.1 mJ
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 1nF
RthJC (per IGBT) 0.96 K/W
RthJH with heatsink compound (0.42 K/m.K; 50 µm) 1.92 K/W
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 17.5 A
VGE = 15/0 V; RG = 82 Ω
PSSI
PSIS
PSIS 25/12*
PSIG 25/12 PSI 25/12* PSSI 25/12*
PSIG
*NTC optional
Short Circuit SOA Capability
Square RBSOA
K 1 0
X 1 6
X 1 3
X 1 5
N T C
E 2
L 9
P 9
G 1 0
X 1 8
PSI
IK 10
R S 18
AC 1
L 9
F 1
X 15
X 16
N TC
T 16
L 9
X 16
NT C
X 15
IK 10
RS 18
AC 1
A1 JK 10S18LN 9
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PSIG PSI PSIS PSSI 25/12
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Reverse diodes (FRED)
Symbol Conditions Maximum Ratings
IF25 TC = 25°C 26 A
IF80 TC = 80°C 17 A
Symbol Conditions Characteristic Values
min. typ. max.
VFIF = 17.5 A; TVJ = 25°C 2.48 2.79 V
TVJ = 125°C 1.84 V
IRM IF = 15 A; diF/dt = 400 A/µs; TVJ = 125°C 16 A
trr VR = 600 V; VGE = 0 V 130 ns
RthJC 2.3 K/W
RthJH with heatsink compound (0.42 K/m.K; 50 µm) 4.6 K/W
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
R25 T = 25°C 4.75 5.0 5.25 kΩ
B25/50 3375 K
Module
Symbol Conditions Maximum Ratings
TVJ -40...+150 °C
Tstg -40...+150 °C
VISOL IISOL ≤ 1 mA; 50/60 Hz 3000 V~
MdMounting torque (M4) 1.5 - 2.0 Nm
14 - 18 lb.in.
aMax. allowable acceleration 50 m/s2
Symbol Conditions Characteristic Values
min. typ. max.
dSCreepage distance on surface (Pin to heatsink) 11.2 mm
dAStrike distance in air (Pin to heatsink) 11.2 mm
Weight 24 g
PSIS
Package style and outline
Dimensions in mm (1mm = 0.0394“)
PSI
PSIG
PSSI
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PSIG PSI PSIS PSSI 25/12
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
0 200 400 600 800 1000
0
10
20
30
40
50
0
40
80
120
160
200
01234567
0
10
20
30
40
50
0 20406080100
0
5
10
15
20
01234567
0
10
20
30
40
50
VCE
V
IC
VCE
A
IC
V
nC
QG-di/dt
V
VGE
IRM
tr
r
A/µs
IRM
trr
9V
11V
VGE = 17V
15V
13V
A
11V
VGE = 17V
15V
13V
A
4 6 8 10 12 14 16
0
10
20
30
40
50
V
VGE
A
IC
TVJ = 25°C
TVJ = 125°C
01234
0
10
20
30
40
50
V
VF
IF
TVJ = 25°CTVJ = 125°C
A
ns
9V
TVJ = 25°C
25T120
25T120
25T120
25T120
25T120
25T120
TVJ = 125°C
TVJ = 125°C
VR = 600V
IF = 15A
VCE = 600V
IC = 15A
VCE = 20V
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics
Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of
free wheeling diode
Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of
free wheeling diode
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PSIG PSI PSIS PSSI 25/12
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
Fig. 9 Typ. turn on energy and switching Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
0102030
0
2
4
6
0
40
80
120
0 102030
0
2
4
6
0
200
400
600
0,00001 0,0001 0,001 0,01 0,1 1 10
0,0001
0,001
0,01
0,1
1
10
0 20 40 60 80 100 120 140
0,0
0,5
1,0
1,5
2,0
0
200
400
600
800
0 20 40 60 80 100 120 140
0
1
2
3
0
50
100
150
single pulse
VDI...25-12P1
VCE = 600V
VGE = ±15V
IC = 15A
TVJ = 125°C
0 200 400 600 800 1000 1200 1400
0
10
20
30
40
RG = 82 Ω
TVJ = 125°C
Eon
td(on)
tr
Eoff
td(off)
tf
Eon
td(on)
tr
Eoff
td(off)
tf
IC
A
IC
A
Eoff
Eon tt
RG
Ω
RG
Ω
VCE t
s
mJ
Eon
mJ
Eoff
ns
t
ns
t
ICM
K/W
ZthJC IGBT
diode
V
A
mJ ns ns
mJ
25T120 25T120
25T120 25T120
25T120
VCE = 600V
VGE = ±15V
RG = 82Ω
TVJ = 125°C
VCE = 600V
VGE = ±15V
RG = 82Ω
TVJ = 125°C
VCE = 600V
VGE = ±15V
IC = 15A
TVJ = 125°C
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA
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