MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A Single Supply 3.0 V to 44 V Operational Amplifiers http://onsemi.com Quality bipolar fabrication with innovative design concepts are employed for the MC33071/72/74, MC34071/72/74, NCV33072/74A series of monolithic operational amplifiers. This series of operational amplifiers offer 4.5 MHz of gain bandwidth product, 13 V/ms slew rate and fast settling time without the use of JFET device technology. Although this series can be operated from split supplies, it is particularly suited for single supply operation, since the common mode input voltage range includes ground potential (VEE). With a Darlington input stage, this series exhibits high input resistance, low input offset voltage and high gain. The all NPN output stage, characterized by no deadband crossover distortion and large output voltage swing, provides high capacitance drive capability, excellent phase and gain margins, low open loop high frequency output impedance and symmetrical source/sink AC frequency response. The MC33071/72/74, MC34071/72/74, NCV33072/74,A series of devices are available in standard or prime performance (A Suffix) grades and are specified over the commercial, industrial/vehicular or military temperature ranges. The complete series of single, dual and quad operational amplifiers are available in plastic DIP, SOIC, QFN and TSSOP surface mount packages. PDIP-8 P SUFFIX CASE 626 8 1 8 1 WQFN10 MT SUFFIX CASE 510AJ PDIP-14 P SUFFIX CASE 646 Features * * * * * * * * * * * * * * * Wide Bandwidth: 4.5 MHz High Slew Rate: 13 V/ms Fast Settling Time: 1.1 ms to 0.1% Wide Single Supply Operation: 3.0 V to 44 V Wide Input Common Mode Voltage Range: Includes Ground (VEE) Low Input Offset Voltage: 3.0 mV Maximum (A Suffix) Large Output Voltage Swing: -14.7 V to +14 V (with 15 V Supplies) Large Capacitance Drive Capability: 0 pF to 10,000 pF Low Total Harmonic Distortion: 0.02% Excellent Phase Margin: 60 Excellent Gain Margin: 12 dB Output Short Circuit Protection ESD Diodes/Clamps Provide Input Protection for Dual and Quad NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q100 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant (c) Semiconductor Components Industries, LLC, 2012 August, 2012 - Rev. 18 1 SOIC-8 D SUFFIX CASE 751 14 1 SOIC-14 D SUFFIX CASE 751A 14 1 14 1 TSSOP-14 DTB SUFFIX CASE 948G ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 17 of this data sheet. DEVICE MARKING INFORMATION See general marking information in the device marking section on page 20 of this data sheet. Publication Order Number: MC34071/D MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A PIN CONNECTIONS CASE 646/CASE 751A/CASE 948G CASE 626/CASE 751 CASE 510AJ VCC Offset Null 1 2 Inputs + 3 VEE 4 8 NC 7 VCC Output 1 Inputs 1 6 Output 5 Offset Null (Single, Top View) 2 Inputs 1 VEE 8 1 3 7 + + 4 VCC Output 2 Output 2 1 + 4 + 4 5 Inputs 2 Output 1 2 3 VCC 14 1 6 2 3 + - 7 10 13 Inputs 4 12 11 + - Output 4 Output 1 1 9 Output 2 NC 2 8 NC 7 In 2 6 In + 2 VEE In 1 10 Inputs 3 9 8 In + 1 3 4 5 Output 3 VEE/GND 6 5 Inputs 2 (Quad, Top View) (Top View) (Dual, Top View) VCC Q3 Q4 Q6 Q5 Q1 Q7 Q17 Q2 R1 C1 R2 D2 Bias Q8 - Q9 Q11 Q10 Q18 R6 R7 Output R8 Inputs + C2 D3 Q19 Base Current Cancellation Q13 Q15 Q14 Q16 Q12 Current Limit D1 R5 R3 R4 VEE/GND Offset Null (MC33071, MC34071 only) Figure 1. Representative Schematic Diagram (Each Amplifier) MAXIMUM RATINGS Rating Symbol Value Unit VS +44 V Input Differential Voltage Range VIDR (Note 1) V Input Voltage Range VIR (Note 1) V Output Short Circuit Duration (Note 2) tSC Indefinite Sec Supply Voltage (from VEE to VCC) Operating Junction Temperature TJ +150 C Storage Temperature Range Tstg -60 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Either or both input voltages should not exceed the magnitude of VCC or VEE. 2. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded (see Figure 2). http://onsemi.com 2 MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = -15 V, RL = connected to ground, unless otherwise noted. See Note 3 for TA = Tlow to Thigh) A Suffix Characteristics Symbol Input Offset Voltage (RS = 100 W, VCM = 0 V, VO = 0 V) VCC = +15 V, VEE = -15 V, TA = +25C VCC = +5.0 V, VEE = 0 V, TA = +25C VCC = +15 V, VEE = -15 V, TA = Tlow to Thigh VIO Average Temperature Coefficient of Input Offset Voltage RS = 10 W, VCM = 0 V, VO = 0 V, TA = Tlow to Thigh IIB Input Offset Current (VCM = 0 V, VO = 0V) TA = +25C TA = Tlow to Thigh IIO Input Common Mode Voltage Range TA = +25C TA = Tlow to Thigh VICR Large Signal Voltage Gain (VO = 10 V, RL = 2.0 kW) TA = +25C TA = Tlow to Thigh AVOL Output Voltage Swing (VID = 1.0 V) VCC = +5.0 V, VEE = 0 V, RL = 2.0 kW, TA = +25C VCC = +15 V, VEE = -15 V, RL = 10 kW, TA = +25C VCC = +15 V, VEE = -15 V, RL = 2.0 kW, TA = Tlow to Thigh VOH VCC = +5.0 V, VEE = 0 V, RL = 2.0 kW, TA = +25C VCC = +15 V, VEE = -15 V, RL = 10 kW, TA = +25C VCC = +15 V, VEE = -15 V, RL = 2.0 kW, TA = Tlow to Thigh VOL Output Short Circuit Current (VID = 1.0 V, VO = 0 V, TA = 25C) Source Sink Typ Max 0.5 0.5 - 3.0 3.0 5.0 - 10 - - - 100 - - - 6.0 - - - - DVIO/DT Input Bias Current (VCM = 0 V, VO = 0 V) TA = +25C TA = Tlow to Thigh Min Non-Suffix Min Typ Max 1.0 1.5 - 5.0 5.0 7.0 - 10 - 500 700 - - 100 - 500 700 50 300 - - 6.0 - 75 300 - - - Unit mV mV/C nA nA VEE to (VCC -1.8) VEE to (VCC -2.2) V VEE to (VCC -1.8) VEE to (VCC -2.2) V/mV 50 25 100 - - - 25 20 100 - - - 3.7 13.6 13.4 4.0 14 - - - - 3.7 13.6 13.4 4.0 14 - - - - 0.1 -14.7 - 0.3 -14.3 -13.5 - - - 0.1 -14.7 - 0.3 -14.3 -13.5 V - - - ISC V mA 10 20 30 30 - - 10 20 30 30 - - Common Mode Rejection RS 10 kW, VCM = VICR, TA = 25C CMR 80 97 - 70 97 - dB Power Supply Rejection (RS = 100 W) VCC/VEE = +16.5 V/-16.5 V to +13.5 V/-13.5 V, TA = 25C PSR 80 97 - 70 97 - dB - - - 1.6 1.9 - 2.0 2.5 2.8 - - - 1.6 1.9 - 2.0 2.5 2.8 Power Supply Current (Per Amplifier, No Load) VCC = +5.0 V, VEE = 0 V, VO = +2.5 V, TA = +25C VCC = +15 V, VEE = -15 V, VO = 0 V, TA = +25C VCC = +15 V, VEE = -15 V, VO = 0 V, TA = Tlow to Thigh 3. Tlow ID mA = -40C for MC33071,2,4,/A, NCV33074 Thigh = +85C for MC33071,2,4,/A, NCV33074 = 0C for MC34071,2,4,/A = +70C for MC34071,2,4,/A = -40C for MC34072,4/V, NCV33072,4A = +125C for MC34072,4/V, NCV33072,4A Case 510AJ Tlow/Thigh guaranteed by product characterization. http://onsemi.com 3 MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A AC ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = -15 V, RL = connected to ground. TA = +25C, unless otherwise noted.) A Suffix Characteristics Symbol Non-Suffix Min Typ Max Min Typ Max 8.0 - 10 13 - - 8.0 - 10 13 - - - - 1.1 2.2 - - - - 1.1 2.2 - - GBW 3.5 4.5 - 3.5 4.5 - MHz BW - 160 - - 160 - kHz - - 60 40 - - - - 60 40 - - - - 12 4.0 - - - - 12 4.0 - - SR Slew Rate (Vin = -10 V to +10 V, RL = 2.0 kW, CL = 500 pF) AV = +1.0 AV = -1.0 Setting Time (10 V Step, AV = -1.0) To 0.1% (+1/2 LSB of 9-Bits) To 0.01% (+1/2 LSB of 12-Bits) V/ms ts Gain Bandwidth Product (f = 100 kHz) Power Bandwidth AV = +1.0, RL = 2.0 kW, VO = 20 Vpp, THD = 5.0% Unit ms Phase margin RL = 2.0 kW RL = 2.0 kW, CL = 300 pF fm Gain Margin RL = 2.0 kW RL = 2.0 kW, CL = 300 pF Am Equivalent Input Noise Voltage RS = 100 W, f = 1.0 kHz en - 32 - - 32 - nV/ Hz Equivalent Input Noise Current f = 1.0 kHz in - 0.22 - - 0.22 - pA/ Hz Differential Input Resistance VCM = 0 V Rin - 150 - - 150 - MW Differential Input Capacitance VCM = 0 V Cin - 2.5 - - 2.5 - pF THD - 0.02 - - 0.02 - % - - 120 - - 120 - dB |ZO| - 30 - - 30 - W Total Harmonic Distortion AV = +10, RL = 2.0 kW, 2.0 Vpp VO 20 Vpp, f = 10 kHz Channel Separation (f = 10 kHz) Open Loop Output Impedance (f = 1.0 MHz) Single Supply Deg dB Split Supplies VCC+|VEE|44 V 3.0 V to 44 V VCC VCC VCC 2 1 VCC 1 3 2 2 3 3 VEE 4 6 + 1 5 4 10 k 4 VEE 7 - VEE Offset nulling range is approximately 80 mV with a 10 k potentiometer (MC33071, MC34071 only). VEE Figure 2. Power Supply Configurations Figure 3. Offset Null Circuit http://onsemi.com 4 V IO INPUT OFFSET VOLTAGE (mV) V, 2400 2000 1600 8 & 14 Pin Plastic Pkg SOIC-14 Pkg 1200 800 SOIC-8 Pkg 400 0 -55 -40 -20 0 20 40 60 80 0 -2.0 -4.0 100 120 140 160 -55 -25 0 25 50 75 100 TA, AMBIENT TEMPERATURE (C) Figure 4. Maximum Power Dissipation versus Temperature for Package Types Figure 5. Input Offset Voltage versus Temperature for Representative Units VCC VCC/VEE = +1.5 V/ -1.5 V to +22 V/ -22 V VCC -0.8 VCC -1.6 VCC -2.4 VEE +0.01 VEE VEE -55 -25 0 25 50 75 100 125 125 1.3 VCC = +15 V VEE = -15 V VCM = 0 1.2 1.1 1.0 0.9 0.8 0.7 -55 -25 0 25 50 75 100 TA, AMBIENT TEMPERATURE (C) TA, AMBIENT TEMPERATURE (C) Figure 6. Input Common Mode Voltage Range versus Temperature Figure 7. Normalized Input Bias Current versus Temperature 125 50 1.4 VCC = +15 V VEE = -15 V TA = 25C 1.2 VO, OUTPUT VOLTAGE SWING (Vpp ) I, IB INPUT BIAS CURRENT (NORMALIZED) 2.0 TA, AMBIENT TEMPERATURE (C) VCC 1.0 0.8 0.6 VCC = +15 V VEE = -15 V VCM = 0 4.0 V, ICR INPUT COMMON MODE VOLTAGE RANGE (V) I, IB INPUT BIAS CURRENT (NORMALIZED) P, D MAXIMUM POWER DISSIPATION (mW) MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A RL Connected to Ground TA = 25C 40 30 RL = 10 k RL = 2.0 k 20 10 0 -12 -8.0 -4.0 0 4.0 8.0 12 0 5.0 10 15 20 VIC, INPUT COMMON MODE VOLTAGE (V) VCC, |VEE|, SUPPLY VOLTAGE (V) Figure 8. Normalized Input Bias Current versus Input Common Mode Voltage Figure 9. Split Supply Output Voltage Swing versus Supply Voltage http://onsemi.com 5 25 VCC/VEE = +4.5 V/ -4.5 V to +22 V/ -22 V Source VCC -1.0 -40 25 125 VCC -2.0 VEE +2.0 Sink 25 VEE +1.0 VEE 85 125 0 5.0 10 15 Vsat , OUTPUT SATURATION VOLTAGE (V) VCC VCC 0.2 0.1 GND 0 100 20 10 k 100 k RL, LOAD RESISTANCE TO GROUND (W) Figure 10. Split Supply Output Saturation versus Load Current Figure 11. Single Supply Output Saturation versus Load Resistance to Ground 60 VCC -0.8 2.0 VCC = +15 V RL to VCC TA = 25C 1.0 GND 100 1.0 k 10 k Sink 40 Source 30 20 VCC = +15 V VEE = -15 V RL 0.1 W DVin = 1.0 V 10 -25 0 25 50 75 100 RL, LOAD RESISTANCE TO VCC (W) TA, AMBIENT TEMPERATURE (C) Figure 12. Single Supply Output Saturation versus Load Resistance to VCC Figure 13. Output Short Circuit Current versus Temperature VO, OUTPUT VOLTAGE SWING (Vpp ) 20 AV = 1000 AV = 100 AV = 10 AV = 1.0 10 10 k 125 28 VCC = +15 V VEE = -15 V VCM = 0 VO = 0 DIO = 0.5 mA TA = 25C 0 1.0 k 50 0 -55 100 k 50 Z, O OUTPUT IMPEDANCE () 1.0 k IL, LOAD CURRENT ( mA) -0.4 30 VCC = +15 V RL = GND TA = 25C VCC-4.0 0 40 VCC VCC-2.0 I, SC OUTPUT CURRENT (mA) Vsat , OUTPUT SATURATION VOLTAGE (V) Vsat , OUTPUT SATURATION VOLTAGE (V) MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A 100 f, FREQUENCY (Hz) 1.0 M 20 16 12 8.0 4.0 0 3.0 k 10 M VCC = +15 V VEE = -15 V AV = +1.0 RL = 2.0 k THD 1.0% TA = 25C 24 Figure 14. Output Impedance versus Frequency 10 k 30 k 100 k 300 k f, FREQUENCY (Hz) 1.0 M Figure 15. Output Voltage Swing versus Frequency http://onsemi.com 6 3.0 M AV = 1000 0.3 VCC = +15 V VEE = -15 V VO = 2.0 Vpp RL = 2.0 k TA = 25C 0.2 AV = 100 0.1 AV = 10 AV = 1.0 0 10 100 1.0 k 10 k 108 2.0 AV = 100 1.0 AV = 10 AV = 1.0 0 4.0 16 20 Figure 16. Total Harmonic Distortion versus Frequency Figure 17. Total Harmonic Distortion versus Output Voltage Swing 100 VCC = +15 V VEE = -15 V VO= -10 V to +10 V RL = 10 k f 10Hz -25 0 25 50 75 100 0 80 Phase Margin = 60 40 20 VCC = +15 V VEE = -15 V VO = 0 V RL = 2.0 k TA = 25C 10 GBW, GAIN BANDWIDTH PRODUCT (NORMALIED) 100 Gain Margin = 12 dB 120 140 -10 1. Phase RL = 2.0 k 2. Phase RL = 2.0 k, CL = 300 pF -20 3. Gain RL = 2.0 k 4. Gain RL = 2.0 k, CL = 300 pF -30 VCC = +15 V VEE = 15 V VO = 0 VTA = 25C -40 1.0 2.0 3.0 5.0 7.0 3 160 180 4 2 10 135 180 100 1.0 k 10 k 100 k 1.0 M 10 M 100 M Figure 19. Open Loop Voltage Gain and Phase versus Frequency Phase Margin = 60 0 90 f, FREQUENCY (Hz) 20 , EXCESS PHASE (DEGREES) 1 45 60 0 1.0 125 Gain Phase Figure 18. Open Loop Voltage Gain versus Temperature A, VOL OPEN LOOP VOLTAGE GAIN (dB) 12 VO, OUTPUT VOLTAGE SWING (Vpp) TA, AMBIENT TEMPERATURE (C) 10 8.0 f, FREQUENCY (Hz) 100 20 VCC = +15 V VEE = -15 V RL = 2.0 k TA = 25C AV = 1000 0 104 96 -55 3.0 100 k 116 112 4.0 , EXCESS PHASE (DEGREES) A, VOL OPEN LOOP VOLTAGE GAIN (dB) THD, TOTAL HARMONIC DISTORTION (%) 0.4 A, VOL OPEN LOOP VOLTAGE GAIN (dB) THD, TOTAL HARMONIC DISTORTION (%) MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A 30 1.15 VCC = +15 V VEE = -15 V RL = 2.0 k 1.1 1.05 1.0 0.95 0.9 0.85 -55 -25 0 25 50 75 100 f, FREQUENCY (MHz) TA, AMBIENT TEMPERATURE (C) Figure 20. Open Loop Voltage Gain and Phase versus Frequency Figure 21. Normalized Gain Bandwidth Product versus Temperature http://onsemi.com 7 125 MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A 70 VCC = +15 V VEE = -15 V RL = 2.0 k VO = -10 V to +10 V TA = 25C 80 60 m , PHASE MARGIN (DEGREES) 40 20 0 10 100 1.0 k VCC = +15 V VEE = -15 V AV = +1.0 RL = 2.0 k to R VO = -10 V to +10 V TA = 25C 60 50 40 30 20 10 0 10 10 k 100 Figure 22. Percent Overshoot versus Load Capacitance 80 10 8.0 m , PHASE MARGIN (DEGREES) VCC = +15 V VEE = -15 V AV = +1.0 RL = 2.0 k to VO = -10 V to +10 V TA = 25C 12 A, m GAIN MARGIN (dB) 10 k Figure 23. Phase Margin versus Load Capacitance 14 6.0 4.0 2.0 0 10 100 1.0 k CL = 10 pF CL = 100 pF 60 40 CL = 1,000 pF 20 VCC = +15 V VEE = -15 V AV = +1.0 RL = 2.0 k to VO = -10 V to +10 V CL = 10,000 pF 0 -55 10 k -25 0 25 50 75 100 125 CL, LOAD CAPACITANCE (pF) TA, AMBIENT TEMPERATURE (C) Figure 24. Gain Margin versus Load Capacitance Figure 25. Phase Margin versus Temperature 16 8.0 4.0 10 CL = 10 pF VEE = -15 V AV = +1.0 RL = 2.0 k to VO = -10 V to +10 V A, m GAIN MARGIN (dB) 12 CL = 100 pF CL = 10,000 pF CL = 1,000 pF -25 0 25 50 75 100 125 60 Gain 8.0 R1 6.0 50 - VO 40 + R2 4.0 2.0 0 0 -55 70 12 VCC = +15 V A, m GAIN MARGIN (dB) 1.0 k CL, LOAD CAPACITANCE (pF) CL, LOAD CAPACITANCE (pF) 30 VCC = +15 V VEE = -15 V RT = R1 + R2 AV = +100 VO = 0 V TA = 25C 1.0 10 20 Phase 10 100 1.0 k 10 k TA, AMBIENT TEMPERATURE (C) RT, DIFFERENTIAL SOURCE RESISTANCE (W) Figure 26. Gain Margin versus Temperature Figure 27. Phase Margin and Gain Margin versus Differential Source Resistance http://onsemi.com 8 0 100 k m , PHASE MARGIN (DEGREES) PERCENT OVERSHOOT 100 MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A V, O OUTPUT VOLTAGE SWING FROM 0 V (V) 1.1 1.05 1.0 0.95 0.9 0.85 -55 50 mV/DIV VCC = +15 V VEE = -15 V AV = +1.0 RL = 2.0 k CL = 500 pF 0 -25 0 25 50 75 100 125 10 1.0 mV 5.0 Compensated Uncompensated 0 1.0 mV -5.0 10 mV 1.0 mV -10 0 0.5 1.0 1.5 3.0 Figure 28. Normalized Slew Rate versus Temperature Figure 29. Output Settling Time VCC = +15 V VEE = -15 V AV = +1.0 RL = 2.0 k CL = 300 pF TA = 25C 100 VCC = +15 V VEE = -15 V AV = +1.0 RL = 2.0 k CL = 300 pF TA = 25C 0 Figure 31. Large Signal Transient Response 100 TA = 125C VCC = +15 V VEE = -15 V VCM = 0 V DVCM = 1.5 V TA = 25C TA = -55C 60 40 ADM DVCM 20 DVCM CMR = 20 Log 1.0 DVO + DVO 10 100 x ADM 1.0 k 3.5 1.0 ms/DIV PSR, POWER SUPPLY REJECTION (dB) CMR, COMMON MODE REJECTION (dB) 2.5 ts, SETTLING TIME (ms) Figure 30. Small Signal Transient Response 0 0.1 2.0 TA, AMBIENT TEMPERATURE (C) 2.0 ms/DIV 80 VCC = +15 V VEE = -15 V AV = -1.0 TA = 25C 1.0 mV 10 mV 5.0 V/DIV SR, SLEW RATE (NORMALIZED) 1.15 10 k 100 k 1.0 M 10 M VCC = +15 V VEE = -15 V TA = 25C 80 DVCC 60 ADM DVEE 40 +PSR = 20 Log 20 1.0 +PSR DVO/ADM DVCC DVO/ADM -PSR = 20 Log 0 0.1 (DVCC = +1.5 V) DVO + -PSR (DVEE = +1.5 V) DVEE 10 100 1.0 k 10 k 100 k 1.0 M 10 M f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 32. Common Mode Rejection versus Frequency Figure 33. Power Supply Rejection versus Frequency http://onsemi.com 9 MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A 105 TA = -55C 8.0 7.0 TA = 25C 6.0 TA = 125C 5.0 Quad device 4.0 0 5.0 10 15 20 +PSR (DVCC = +1.5 V) 85 +PSR = 20 Log 75 DVCC DVO/ADM ADM DVCC DVO + -PSR = 20 Log -25 0 DVO/ADM DVEE DVEE 25 50 75 100 VCC, |VEE|, SUPPLY VOLTAGE (V) TA, AMBIENT TEMPERATURE (C) Figure 34. Supply Current versus Supply Voltage Figure 35. Power Supply Rejection versus Temperature e, n INPUT NOICE VOLTAGE ( nV Hz) CHANNEL SEPARATION (dB) 80 VCC = +15 V VEE = -15 V 95 65 -55 25 120 100 -PSR (DVEE = +1.5 V) VCC = +15 V VEE = -15 V TA = 25C 60 40 20 0 2.8 70 VCC = +15 V VEE = -15 V VCM = 0 TA = 25C 60 50 40 20 30 50 70 100 200 300 2.4 2.0 1.6 Voltage 30 1.2 Current 20 0.8 10 0.4 0 10 125 10 100 1.0 k 10 k 0 100 k i, n INPUT NOISE CURRENT (pA Hz ) PSR, POWER SUPPLY REJECTION (dB) I CC , SUPPLY CURRENT (mA) 9.0 f, FREQUENCY (kHz) f, FREQUENCY (kHz) Figure 36. Channel Separation versus Frequency Figure 37. Input Noise versus Frequency APPLICATIONS INFORMATION CIRCUIT DESCRIPTION/PERFORMANCE FEATURES up to approximately 5.0 mA of current from VEE through either inputs clamping diode without damage or latching, although phase reversal may again occur. If one or both inputs exceed the upper common mode voltage limit, the amplifier output is readily predictable and may be in a low or high state depending on the existing input bias conditions. Since the input capacitance associated with the small geometry input device is substantially lower (2.5 pF) than the typical JFET input gate capacitance (5.0 pF), better frequency response for a given input source resistance can be achieved using the MC34071 series of amplifiers. This performance feature becomes evident, for example, in fast settling D-to-A current to voltage conversion applications where the feedback resistance can form an input pole with the input capacitance of the op amp. This input pole creates a 2nd order system with the single pole op amp and is therefore detrimental to its settling time. In this context, lower input capacitance is desirable especially for higher Although the bandwidth, slew rate, and settling time of the MC34071 amplifier series are similar to op amp products utilizing JFET input devices, these amplifiers offer other additional distinct advantages as a result of the PNP transistor differential input stage and an all NPN transistor output stage. Since the input common mode voltage range of this input stage includes the VEE potential, single supply operation is feasible to as low as 3.0 V with the common mode input voltage at ground potential. The input stage also allows differential input voltages up to 44 V, provided the maximum input voltage range is not exceeded. Specifically, the input voltages must range between VEE and VCC supply voltages as shown by the maximum rating table. In practice, although not recommended, the input voltages can exceed the VCC voltage by approximately 3.0 V and decrease below the VEE voltage by 0.3 V without causing product damage, although output phase reversal may occur. It is also possible to source http://onsemi.com 10 MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A Because the PNP output emitter-follower transistor has been eliminated, the MC34071 series offers a 20 mA minimum current sink capability, typically to an output voltage of (VEE +1.8 V). In single supply applications the output can directly source or sink base current from a common emitter NPN transistor for fast high current switching applications. In addition, the all NPN transistor output stage is inherently fast, contributing to the bipolar amplifier's high gain bandwidth product and fast settling capability. The associated high frequency low output impedance (30 W typ @ 1.0 MHz) allows capacitive drive capability from 0 pF to 10,000 pF without oscillation in the unity closed loop gain configuration. The 60 phase margin and 12 dB gain margin as well as the general gain and phase characteristics are virtually independent of the source/sink output swing conditions. This allows easier system phase compensation, since output swing will not be a phase consideration. The high frequency characteristics of the MC34071 series also allow excellent high frequency active filter capability, especially for low voltage single supply applications. Although the single supply specifications is defined at 5.0 V, these amplifiers are functional to 3.0 V @ 25C although slight changes in parametrics such as bandwidth, slew rate, and DC gain may occur. If power to this integrated circuit is applied in reverse polarity or if the IC is installed backwards in a socket, large unlimited current surges will occur through the device that may result in device destruction. Special static precautions are not necessary for these bipolar amplifiers since there are no MOS transistors on the die. As with most high frequency amplifiers, proper lead dress, component placement, and PC board layout should be exercised for optimum frequency performance. For example, long unshielded input or output leads may result in unwanted input-output coupling. In order to preserve the relatively low input capacitance associated with these amplifiers, resistors connected to the inputs should be immediately adjacent to the input pin to minimize additional stray input capacitance. This not only minimizes the input pole for optimum frequency response, but also minimizes extraneous "pick up" at this node. Supply decoupling with adequate capacitance immediately adjacent to the supply pin is also important, particularly over temperature, since many types of decoupling capacitors exhibit great impedance changes over temperature. The output of any one amplifier is current limited and thus protected from a direct short to ground. However, under such conditions, it is important not to allow the device to exceed the maximum junction temperature rating. Typically for 15 V supplies, any one output can be shorted continuously to ground without exceeding the maximum temperature rating. values of feedback resistances (lower current DACs). This input pole can be compensated for by creating a feedback zero with a capacitance across the feedback resistance, if necessary, to reduce overshoot. For 2.0 kW of feedback resistance, the MC34071 series can settle to within 1/2 LSB of 8-bits in 1.0 ms, and within 1/2 LSB of 12-bits in 2.2 ms for a 10 V step. In a inverting unity gain fast settling configuration, the symmetrical slew rate is 13 V/ms. In the classic noninverting unity gain configuration, the output positive slew rate is +10 V/ms, and the corresponding negative slew rate will exceed the positive slew rate as a function of the fall time of the input waveform. Since the bipolar input device matching characteristics are superior to that of JFETs, a low untrimmed maximum offset voltage of 3.0 mV prime and 5.0 mV downgrade can be economically offered with high frequency performance characteristics. This combination is ideal for low cost precision, high speed quad op amp applications. The all NPN output stage, shown in its basic form on the equivalent circuit schematic, offers unique advantages over the more conventional NPN/PNP transistor Class AB output stage. A 10 kW load resistance can swing within 1.0 V of the positive rail (VCC), and within 0.3 V of the negative rail (VEE), providing a 28.7 Vpp swing from 15 V supplies. This large output swing becomes most noticeable at lower supply voltages. The positive swing is limited by the saturation voltage of the current source transistor Q7, and VBE of the NPN pull up transistor Q17, and the voltage drop associated with the short circuit resistance, R7. The negative swing is limited by the saturation voltage of the pull-down transistor Q16, the voltage drop ILR6, and the voltage drop associated with resistance R7, where IL is the sink load current. For small valued sink currents, the above voltage drops are negligible, allowing the negative swing voltage to approach within millivolts of VEE. For large valued sink currents (>5.0 mA), diode D3 clamps the voltage across R6, thus limiting the negative swing to the saturation voltage of Q16, plus the forward diode drop of D3 (VEE +1.0 V). Thus for a given supply voltage, unprecedented peak-to-peak output voltage swing is possible as indicated by the output swing specifications. If the load resistance is referenced to VCC instead of ground for single supply applications, the maximum possible output swing can be achieved for a given supply voltage. For light load currents, the load resistance will pull the output to VCC during the positive swing and the output will pull the load resistance near ground during the negative swing. The load resistance value should be much less than that of the feedback resistance to maximize pull up capability. http://onsemi.com 11 MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A (Typical Single Supply Applications VCC = 5.0 V) VCC 5.1 M VO 0 3.7 Vpp 0 VCC 20 k 100 k 1.0 M Cin CO + VO 68 k MC34071 36.6 mVpp Cin 100 k Vin 1.0 k 10 k RL - VO CO 10 k RL 100 k AV = 10 BW (-3.0 dB) = 450 kHz Figure 38. AC Coupled Noninverting Amplifier Figure 39. AC Coupled Inverting Amplifier VCC 4.75 Vpp 2.63 V + MC34071 10 k Vin 370 mVpp AV = 101 BW (-3.0 dB) = 45 kHz VO 3.7 Vpp 91 k 5.1 k RL 5.1 k 2.5 V + VO MC34071 100 k 0 - 0 to 10,000 pF + Vin 1.0 M MC54/74XX MC34071 Vin Figure 40. DC Coupled Inverting Amplifier Maximum Output Swing C 0.047 R1 16 k C 0.01 32 k R VO VCC 0.4 VCC Then: R3 = fo = 1.0 kHz fo = 2.0 C 0.02 + fo = 30 kHz Ho = 10 Ho = 1.0 Given fo = Center Frequency AO = Gain at Center Frequency Choose Value fo, Q, Ao, C 16 k 2.0 R MC34071 C 0.047 MC34071 + R3 2.2 k - 1.1 k R2 5.6 k VO R Vin TTL Gate Figure 41. Unity Gain Buffer TTL Driver Vin Vin 0.2 Vdc Cable AV = 10 BW (-3.0 dB) = 450 kHz 1 4pRC Q R3 R1 = 2Ho pfoC R2 = R1 R3 4Q2R1-R3 For less than 10% error from operational amplifier Qofo GBW < 0.1 where fo and GBW are expressed in Hz. GBW = 4.5 MHz Typ. 2.0 C 0.02 Figure 43. Active Bandpass Filter Figure 42. Active High-Q Notch Filter http://onsemi.com 12 MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A Vin CF 2.0 V RF 5.0 k 5.0 k 5.0 k Vin - VO 10 k + 10 k t 2.0 k RL MC34071 10 k VO + MC34071 VCC 1.0 V VO 0.2 ms Delay 4.0 V Bit Switches 13 V/ms (R-2R) Ladder Network 25 V/ms 0.1 t Delay 1.0 ms Settling Time 1.0 ms (8-Bits, 1/2 LSB) Figure 44. Low Voltage Fast D/A Converter Figure 45. High Speed Low Voltage Comparator VCC "ON" Vin < Vref VCC VCC + Vin RL MC34071 Vref + + MC34071 MC34071 - - "ON" Vin > Vref RL (A) PNP Figure 46. LED Driver (B) NPN Figure 47. Transistor Driver ILoad RF + MC34071 VO Ground Current Sense Resistor RS - ICell MC34071 R1 R2 VO + VO = ILoad RS 1+ R1 R2 For VO > 0.1V BW ( -3.0 dB) = GBW VCell = 0 V R2 R1+R2 VO = ICell RF VO > 0.1 V Figure 48. AC/DC Ground Current Monitor Figure 49. Photovoltaic Cell Amplifier http://onsemi.com 13 MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A VO Hysteresis R2 Vref VOH R1 Iout + MC34071 VOL - Vin Vin Vin VinL VinL = R1 (VOL-Vref)+Vref R1+R2 VinH = R1 (VOH-Vref)+Vref R1+R2 VH = R1 (VOH -VOL) R1+R MC34071 - Vref Iout = Figure 50. Low Input Voltage Comparator with Hysteresis R1 + VinH R Figure 51. High Compliance Voltage to Sink Current Converter R2 +Vref R4 RF - 1/2 R3 - 1/2 MC34072 MC34072 +V1 R VinVIO + R VO R - + R R = DR R2 R4 = (Critical to CMRR) R1 R3 R4 R4 VO = 1 + V2-V1 R3 R3 For (V2 V1), V > 0 Figure 52. High Input Impedance Differential Amplifier + VO = Vref RF DR < < R RF > > R DR RF 2R2 (VO 0.1 V) Figure 53. Bridge Current Amplifier fOSC ^ 0.85 RC + IB V VP 0 t - Vin + VO MC34071 +V2 VO = Vin (pk) + ISC t Base Charge Removal MC34071 Iout RL VP 10,000 pF C + 1/2 MC34072 + - V+ IB 100 k 100 k Vin R MC34072 - 1/2 + 47 k VP Pulse Width Control Group VP OSC t Figure 54. Low Voltage Peak Detector Comparator High Current Output Figure 55. High Frequency Pulse Width Modulation http://onsemi.com 14 MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A GENERAL ADDITIONAL APPLICATIONS INFORMATION VS = 15.0 V C2 0.02 R1 560 C2 0.05 - R2 5.6 k R3 510 MC34071 C1 1.0 - R2 1.1 k MC34071 C1 0.44 R1 46.1 k C1 1.0 fo = 1.0 kHz Ho = 10 + fo = 100 Hz Ho = 20 + Then: R1 = Choose: fo, Ho, C1 Choose: fo, Ho, C2 Then: C1 = 2C2 (Ho+1) R2 = 2 R2 R1 = Ho R2 R3 = Ho+1 4pfoC2 R2 = C2 = Figure 56. Second Order Low-Pass Active Filter Ho+0.5 pfoC1 2 2 2pfoC1 (1/Ho+2) C Ho Figure 57. Second Order High-Pass Active Filter CF * VO = 10 V Step RF 2.0 k + MC34071 MC34071 R1 VO + I High Speed DAC Vin ts = 1.0 ms Uncompensated RL R2 to 1/2 LSB (8-Bits) ts = 2.2 ms Compensated VO to 1/2 LSB (12-Bits) Vin = R2 BW (-3.0 dB) = GBW R1 SR = 13 V/ms *Optional Compensation VO - R1 R1 +R2 SR = 13 V/ms Figure 58. Fast Settling Inverter Figure 59. Basic Inverting Amplifier + MC34071 VO Vin Vin R2 + MC34071 RL VO R1 VO Vin = 1+ R2 R1 BW (-3.0 dB) = GBW BWp = 200 kHz VO = 20 Vpp SR = 10 V/ms R1 R1 +R2 Figure 60. Basic Noninverting Amplifier Figure 61. Unity Gain Buffer (AV = +1.0) http://onsemi.com 15 MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A + R R MC34074 R VO MC34074 RE + R - R Example: Let: R = RE = 12 k Then: AV = 3.0 BW = 1.5 MHz MC34074 + R AV = 1 +2 R RE Figure 62. High Impedance Differential Amplifier +VO + + MC34074 100 k - 10 + RL 10 +10 MC34074 + 220 pF 100 k -10 + + RL +VO -VO 18.93 -18.78 10 k 5.0 k 18 15.4 -18 -15.4 + MC34074 100 k - 10 RL 10 -VO Figure 63. Dual Voltage Doubler http://onsemi.com 16 MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A ORDERING INFORMATION Op Amp Function Device Operating Temperature Range MC34071PG Shipping 50 Units / Rail MC34071APG PDIP-8 (Pb-Free) 50 Units / Rail MC34071DG SOIC-8 (Pb-Free) 98 Units / Rail SOIC-8 (Pb-Free) 2500 / Tape & Reel MC34071ADG SOIC-8 (Pb-Free) 98 Units / Rail MC34071ADR2G SOIC-8 (Pb-Free) 2500 / Tape & Reel MC33071PG PDIP-8 (Pb-Free) 50 Units / Rail MC33071APG PDIP-8 (Pb-Free) 50 Units / Rail MC33071DG SOIC-8 (Pb-Free) 98 Units / Rail SOIC-8 (Pb-Free) 2500 / Tape & Reel MC33071ADG SOIC-8 (Pb-Free) 98 Units / Rail MC33071ADR2G SOIC-8 (Pb-Free) 2500 / Tape & Reel MC34071DR2G Single Package PDIP-8 (Pb-Free) MC33071DR2G TA = 0 to +70C TA = -40 to +85C http://onsemi.com 17 MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A ORDERING INFORMATION (continued) Op Amp Function Device Operating Temperature Range MC34072PG MC34072APG PDIP-8 (Pb-Free) MC34072DG SOIC-8 (Pb-Free) MC34072ADG Dual Package PDIP-8 (Pb-Free) TA = 0 to +70C SOIC-8 (Pb-Free) MC34072DR2G SOIC-8 (Pb-Free) MC34072ADR2G SOIC-8 (Pb-Free) MC34072AMTTBG WQFN10 (Pb-Free) MC33072PG PDIP-8 (Pb-Free) MC33072APG PDIP-8 (Pb-Free) MC33072DG SOIC-8 (Pb-Free) MC33072ADG TA = -40 to +85C SOIC-8 (Pb-Free) Shipping 50 Units / Rail 98 Units / Rail 2500 Units / Tape & Reel 3000 Units / Tape & Reel 50 Units / Rail 98 Units / Rail MC33072DR2G SOIC-8 (Pb-Free) MC33072ADR2G SOIC-8 (Pb-Free) MC34072VDG SOIC-8 (Pb-Free) 98 Units / Rail MC34072VDR2G SOIC-8 (Pb-Free) 2500 / Tape & Reel PDIP-8 (Pb-Free) 50 Units / Rail MC34072VPG TA = -40 to +125C NCV33072DR2G* SOIC-8 (Pb-Free) 2500 / Tape & Reel 2500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NCV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q100 qualified and PPAP capable. http://onsemi.com 18 MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A ORDERING INFORMATION (continued) Op Amp Function Device Package MC34074PG PDIP-14 (Pb-Free) MC34074APG PDIP-14 (Pb-Free) MC34074DG SOIC-14 (Pb-Free) MC34074ADG Quad Operating Temperature Range TA = 0 to +70C SOIC-14 (Pb-Free) MC34074ADR2G SOIC-14 (Pb-Free) MC34074DR2G SOIC-14 (Pb-Free) MC33074PG PDIP-14 (Pb-Free) MC33074APG PDIP-14 (Pb-Free) MC33074DG SOIC-14 (Pb-Free) MC33074ADG SOIC-14 (Pb-Free) MC33074DR2G SOIC-14 (Pb-Free) MC33074ADR2G TA = -40 to +85C SOIC-14 (Pb-Free) Shipping 25 Units / Rail 55 Units / Rail 2500 Units / Tape & Reel 25 Units / Rail 55 Units / Rail 2500 / Tape & Reel MC33074DTBG TSSOP-14 (Pb-Free) 96 Units / Rail MC33074DTBR2G TSSOP-14 (Pb-Free) 2500 / Tape & Reel MC33074ADTBG TSSOP-14 (Pb-Free) 96 Units / Rail MC33074ADTBR2G TSSOP-14 (Pb-Free) 2500 / Tape & Reel NCV33074DR2G* SOIC-14 (Pb-Free) 2500 / Tape & Reel MC34074VDG SOIC-14 (Pb-Free) 55 Units / Rail MC34074VDR2G SOIC-14 (Pb-Free) 2500 / Tape & Reel PDIP-14 (Pb-Free) 25 Units / Rail TSSOP-14 (Pb-Free) 2500 / Tape & Reel MC34074VPG TA = -40 to +125C NCV33074ADTBR2G* For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NCV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q100 qualified and PPAP capable. http://onsemi.com 19 MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A MARKING DIAGRAMS PDIP-8 P SUFFIX CASE 626 8 8 MC3x071P AWL YYWWG 8 8 MC3x071AP AWL YYWWG 1 1 MC3x072P AWL YYWWG 1 8 MC3x072AP AWL YYWWG 1 MC34072VP AWL YYWWG 1 SOIC-8 D SUFFIX CASE 751 8 8 3x071 ALYWA 3x071 ALYW 8 3x072 ALYW 1 1 8 8 1 34072 ALYWV 3x072 ALYWA 1 1 PDIP-14 P SUFFIX CASE 646 14 14 14 MC3x074AP AWLYYWWG MC3x074P AWLYYWWG 1 1 MC34074VP AWLYYWWG 1 SOIC-14 D SUFFIX CASE 751A 14 14 MC3x074DG AWLYWW 1 TSSOP-14 DTB SUFFIX CASE 948G MC3x074ADG AWLYWW 1 14 14 14 MC33 074 ALYW MC34074VDG AWLYWW 1 1 WQFN10 MT SUFFIX CASE 510AJ 4072 AAYW x = 3 or 4 A = Assembly Location WL, L = Wafer Lot YY, Y = Year WW, W = Work Week G or = Pb-Free Package (Note: Microdot may be in either location) http://onsemi.com 20 14 MC33 074A ALYW 1 NCV3 074A ALYW 1 MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A PACKAGE DIMENSIONS 8 LEAD PDIP CASE 626-05 ISSUE M D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSION E IS MEASURED WITH THE LEADS RESTRAINED PARALLEL AT WIDTH E2. 4. DIMENSION E1 DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. A D1 E 8 5 E1 1 4 NOTE 5 F c E2 END VIEW TOP VIEW NOTE 3 e/2 A DIM A A1 b C D D1 E E1 E2 E3 e L INCHES NOM MAX ---- 0.210 ---- ---- 0.018 0.022 0.010 0.014 0.365 0.400 ---- ---- 0.310 0.325 0.250 0.280 0.300 BSC ---- ---- 0.430 0.100 BSC 0.115 0.130 0.150 MIN ---- 0.015 0.014 0.008 0.355 0.005 0.300 0.240 MILLIMETERS MIN NOM MAX ---- ---- 5.33 0.38 ---- ---- 0.35 0.46 0.56 0.20 0.25 0.36 9.02 9.27 10.02 0.13 ---- ---- 7.62 7.87 8.26 6.10 6.35 7.11 7.62 BSC ---- ---- 10.92 2.54 BSC 2.92 3.30 3.81 L A1 C SEATING PLANE E3 e 8X SIDE VIEW b 0.010 C A M END VIEW PDIP-14 CASE 646-06 ISSUE P 14 8 1 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. B A F L N C -T- SEATING PLANE H G D 14 PL J K 0.13 (0.005) M M http://onsemi.com 21 DIM A B C D F G H J K L M N INCHES MIN MAX 0.715 0.770 0.240 0.260 0.145 0.185 0.015 0.021 0.040 0.070 0.100 BSC 0.052 0.095 0.008 0.015 0.115 0.135 0.290 0.310 --- 10 0.015 0.039 MILLIMETERS MIN MAX 18.16 19.56 6.10 6.60 3.69 4.69 0.38 0.53 1.02 1.78 2.54 BSC 1.32 2.41 0.20 0.38 2.92 3.43 7.37 7.87 --- 10 0.38 1.01 MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A PACKAGE DIMENSIONS TSSOP-14 CASE 948G ISSUE B 14X K REF 0.10 (0.004) 0.15 (0.006) T U T U M V S S S N 2X 14 L/2 M B -U- L PIN 1 IDENT. N F 7 1 0.15 (0.006) T U 0.25 (0.010) 8 S DETAIL E K A -V- EEE CCC CCC EEE K1 J J1 SECTION N-N C 0.10 (0.004) -T- SEATING PLANE D H G DETAIL E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. MILLIMETERS INCHES DIM MIN MAX MIN MAX A 4.90 5.10 0.193 0.200 B 4.30 4.50 0.169 0.177 C --- 1.20 --- 0.047 D 0.05 0.15 0.002 0.006 F 0.50 0.75 0.020 0.030 G 0.65 BSC 0.026 BSC H 0.50 0.60 0.020 0.024 J 0.09 0.20 0.004 0.008 J1 0.09 0.16 0.004 0.006 -W- K 0.19 0.30 0.007 0.012 K1 0.19 0.25 0.007 0.010 L 6.40 BSC 0.252 BSC M 0 8 0 8 SOLDERING FOOTPRINT* 7.06 1 0.65 PITCH 14X 0.36 14X 1.26 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 22 MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AK -X- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. A 8 5 S B 0.25 (0.010) M Y M 1 4 -Y- K G C N DIM A B C D G H J K M N S X 45 SEATING PLANE -Z- 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 23 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0 8 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 8 0.010 0.020 0.228 0.244 MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A PACKAGE DIMENSIONS SOIC-14 CASE 751A-03 ISSUE K D A B 14 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF AT MAXIMUM MATERIAL CONDITION. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSIONS. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. A3 E H L 1 0.25 M DETAIL A 7 B 13X M b 0.25 M C A S B S DETAIL A h A X 45 M A1 e DIM A A1 A3 b D E e H h L M C SEATING PLANE SOLDERING FOOTPRINT* 6.50 14X 1.18 1 1.27 PITCH 14X 0.58 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 24 MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.19 0.25 0.35 0.49 8.55 8.75 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0 7 INCHES MIN MAX 0.054 0.068 0.004 0.010 0.008 0.010 0.014 0.019 0.337 0.344 0.150 0.157 0.050 BSC 0.228 0.244 0.010 0.019 0.016 0.049 0 7 MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A PACKAGE DIMENSIONS WQFN10 CASE 510AJ ISSUE A III III III D L1 PIN ONE REFERENCE DETAIL A E ALTERNATE TERMINAL CONSTRUCTIONS 0.15 C 0.15 C A3 DETAIL B C SIDE VIEW SOLDERING FOOTPRINT* SEATING PLANE 2.90 DETAIL A 5 L L2 MOLD CMPD MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.20 0.30 2.60 BSC 2.60 BSC 0.50 BSC 0.45 0.55 0.00 0.15 0.55 0.65 A1 NOTE 4 9X DIM A A1 A3 b D E e L L1 L2 ALTERNATE CONSTRUCTIONS A 0.08 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. EEE EEE EXPOSED Cu TOP VIEW DETAIL B 0.10 C L L A B 1 4 6 1 9 10X e 10X 10 10X BOTTOM VIEW b 0.10 C A 0.05 C 0.50 PITCH 2.90 0.30 0.73 DIMENSIONS: MILLIMETERS B NOTE 3 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 http://onsemi.com 25 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MC34071/D