Ordering number: EN 2089B } No.2089B |} 28A1477/2SC3787 , PNP/NPN Epitaxial Planar Silicon Transistors | High-Voltage Switching Applications Applications - Predrivers for 100W power amplifiers. Features - Adoption of FBET process. - Excellent linearity of hpg. - Small Cob. - Plastic-covered heat sink facilitating high-density mounting (TO126ML package). ( )}:2SA1477 Absolute Maximum Ratings at Ta=25C unit Collector-to-Base Voltage Vcso (~)180 Vv Collector-to-Emitter Voltage VcEo ()160 Vv Emitter-to-Base Voltage VERO (-)5 V Collector Current Ic ()140 mA Collector Current (Pulse) Icp ()200 mA Collector Dissipation Pc 1.3 W Te=25C 10 WwW Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Electrical Characteristics at Ta= 25C min typ max unit Collector Cutoff Current Icgo Vep=()120V, Ip=0 ()100 nA Emitter Cutoff Current Izpo Vep=()4V,I=0 ()100 nA DC Current Gain hrpX Vcr=()5V, I=()10mA 100 400 Gain Bandwidth Product fr Ver=()10V, Ic =()10mA 150 MHz Output Capacitance Cob Vcop=()10V, f= 1MHz (4.0) pF 3.0 pF C-E Saturation Voltage Vextsat) Ic=()50mA, Ip=()5mA (140)( 400) mV 70 300 mV B-E Saturation Voltage Vextsat) Ic=()50mA, Ip=()5mA 12 V C-B Breakdown Voltage Viprycpo Ic=()10pA, Ip=0 ()180 Vv C-E Breakdown Voltage Vipryceo Ic=()1mA, Rpr= ()160 Vv E-B Breakdown Voltage VipReBo Ip=()10pA, Ic=0 ()5 V Rise Time ton See specified Test Circuit. 0.1 US Storage Time tstg a 1.5 Us Fall Time ty u 0.1 Us * * : The 25A1477/2SC3787 are classified by 10mA hpgas follows; Package Dimensions 2042B it: |} 100 R 200 | 140 s 280 | 200 T 400 (unit : mm) Switching Time Test Circuit peer wet out 5 . Sear aw 2k I=101g1=10Ig2=10mA LE a For PNP, the polarity is b= > +: emitter Sy Sy reversed, ste] 5 ae Unit (Resistance : @, Capacitance : F) , SANYO: TO126ML me 7997076 0016353 387 MM i ooogrs KOTO) 8-8491/5197TA, TS No.2089-1/42SA1477/2SC3787 Ic ~ Vee 40 | 2SA1477 -120-+-- a Soh | 100} DET gph ae 2 a % ~80 9 3mhLer i o ~60 o.2mAr cl g 40 fT a - t 3 0.1mA -20 0 Ip=0 0 -10 -20 -30 -40 = -50 -60 ~-70 Collector-to-Emitter Voltage,Voz V Ic Vee ~160 a8A14 140 Von=5V < & 120 | o 2 -100 a o E -80 3 oO & -60 8 = -40 Oo -20 0 -0.2 -0.4 -0.6 -0.8 1.0 -1.2 Base-to-Emitter Voltage, Vgp V hre Ic 1000 i Vcg=~ & q at a 3 oa 3 100 E s Oo oO A 10 -1.0 -10 -100 Collector Current,I; mA . fr Ic oe 2SA1477 m4 Vcr=10V . nN | Lt & | IN 3 100 a -/+- Ay s 3 = a s oS m4 & & 5 40 -1.0 2 -10 5 =100 4 Collector CurrentJg mA _ 140 Collector Current,Icp mA $ 8 8 8 w a lc Vee o.3mA 0.2mA 0.1mA 28C3787 0 =0 0 10 20 30 40 50 60 70 Collector-to-Emitter Voltage, Voz V Ic - V 160 C BE 28C3787 140 {Tt Ver =5V q | = 120 } | 2100 ~~ 5 | o & 80 s Oo & 60 Phofo 8 19} ia fin 3 10 tS 3 & 20 7 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-to-Emitter Voltage, Vpp V here | 1000 FE Cc DC Current Gain,hpy 8 Collector Current,I, mA 10 Voe=5V 100 me 79597076 GO16354 elb 3 fr Ic - 28C3787 a 2 Vcr=10V La IN = 100 A \ 2 | AO \ Aa BK s zs = = Ss a J Ss " Ss oa 10 1.0 5 10 os 5 7 100 Collector Current,I; mA No.2089-2/428A1477/28C3787 - Vv 100 Cob cB ATT f=1MHz Output Capacitance,Cob pF Collector-to-Base Voltage, Voz V Vce(sat) Ic : 2SA1477 Ic/Ip=10 -100 Saturation Voltage, Vopj_a1) mV Collector-to-Emitter 25 -10 Collector Current,I, mA Ve Ie -100 2SA1477 Ic/Ip=10 Saturation Voltage, Varieat) V Base-to-Emitter 41.0 0 100 Collector Current,Ip mA 4 Pc Ta . 2SA1477/25C3787 1.3 | NN fo 1.0 NI + g Ke 3 08 Ne 2. XY, e Ne & 0.6 a N tat 5 ou NJ 3 XQ 0.2 N 5 20 20 8080100120 Ambient Temperature, Ta C Mm 7997076 0016355 152 160 Cob Veg 100 10 Output Capacitance,Cob pF 1.0 1.0 10 100 Collector-to-Base Voltage, Vc, V VcE(sat) Ic 10000 87 Io/p=10 mV 8 oO 100 Ta=75C c Saturation Voltage, Vomeay Collector-to-Emitter 25C 1.0 10 100 Collector Current,I mA 10 VeE(sat) Ic Saturation Voltage, Vpreat) V Base-to-Emitter 10 100 Collector Current,I; - mA 2 Po Te 2SA1477/28C3787 ze 10 I N\ NN Ag : XK 3 a a 5 4 2 5 2 aN % 20 40 60 80 OW 120 40 160 Case Temperature,Tc C No.2089-3/428A1477/2SC3787 Collector Current,I> mA ASO 477 787 8 Ta=25 Single pulse 10 Collector-to-Emitter Voltage,Voz V M@ No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. @ Anyone purchasing any products described or contained herein for an above-mentioned use shall: @ Accept fulk responsibility and indemnify and defend SANYO ELECTRIC CO. LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO. LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mf Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, , This catalog provides information as of January, 1996. Specifications and information herein are subject to change without notice. Me 7997076 0036356 099 No.2089-4/4 92177