TSTA7300
Document Number 81045
Rev. 1.6, 23-Feb-07
Vishay Semiconductors
www.vishay.com
1
948642
Infrared Emitting Diode, 870 nm, GaAlAs
Description
TSTA7300 is a high efficiency infrared emitting diode
in GaAlAs on GaAlAs technology in a hermetically
sealed TO-18 package. Its glass lens provides a high
radiant intensity without external optics.
Features
• High radiant power and radiant intensity
• Suitable for pulse operation
• Angle of half intensity ϕ = ± 12°
• Peak wavelength λp = 875 nm e4
• High reliability
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Radiation source in near infrared range
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp ≤ 100 µs IFM 200 mA
Surge forward current tp ≤ 100 µs IFSM 2.5 A
Power dissipation PV180 mW
Tcase ≤ 25 °C PV500 mW
Junction temperature Tj100 °C
Storage temperature range Tstg - 55 to + 100 °C
Thermal resistance junction/
ambient
RthJA 450 K/W
Thermal resistance junction/
case
RthJC 150 K/W
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage IF = 100 mA, tp ≤ 20 ms VF1.4 1.8 V
Breakdown voltage IR = 100 µA V(BR) 5V
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj20 pF
www.vishay.com
2
Document Number 81045
Rev. 1.6, 23-Feb-07
TSTA7300
Vishay Semiconductors
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Min Typ. Max Unit
Radiant intensity IF = 100 mA, tp ≤ 20 ms Ie10 20 50 mW/sr
Radiant power IF = 100 mA, tp ≤ 20 ms φe10 mW
Temp. coefficient of φeIF = 100 mA TKφe- 0.7 %/K
Angle of half intensity ϕ± 12 deg
Peak wavelength IF = 100 mA λp875 nm
Spectral bandwidth IF = 100 mA Δλ 80 nm
Rise time IF = 1.5 A, tp/T = 0.01, tp ≤ 10 µs tr300 ns
Fall time IF = 1.5 A, tp/T = 0.01, tp ≤ 10 µs tf300 ns
Virtual source diameter ∅1mm
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
0
200
400
600
12790
R
thJA
100
300
500
R
thJC
T
amb
- Ambient Temperature (°C)
50 12510075250
P - Power Dissipation (mW)
V
0
25
50
75
100
125
94 7971
R
thJA
R
thJC
T
amb
- Ambient Temperature (°C)
40 1008060200
I - Forward Current (mA)
F
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 4. Forward Current vs. Forward Voltage
t
p
- Pulse Duration (ms)
94 8003
10
0
10
1
10
1
10
-1
10
-1
10
0
10
2
10
-2
t
p
/T=0.01
I
FSM
= 2.5 A (Single Pause)
0.05
0.1
0.2
0.5
I - Forward Current (A)
F
VF- Forward Voltage (V)
94 8005
101
102
103
104
t
p
= 100 µs
t
p
/T = 0.001
43210
I - Forward Current (mA)
F
TSTA7300
Document Number 81045
Rev. 1.6, 23-Feb-07
Vishay Semiconductors
www.vishay.com
3
Figure 5. Relative Forward Voltage vs. Ambient Temperature
Figure 6. Radiant Intensity vs. Forward Current
Figure 7. Radiant Power vs. Forward Current
0.7
0.8
0.9
1.0
1.1
1.2
V- Relative Forward Voltage (V)
Frel
94 7990
T
amb
- Ambient Temperature (°C)
100806040200
I
F
= 10 mA
IF - Forward Current (mA)
94 7974e
103
101102104
100
0.1
1
10
1000
100
I - Radiant Intensity (mW/sr)
e
I
F
- Forward Current (mA)
94 7972
103
101102104
100
0.1
1
10
1000
- Radiant Power (mW)
e
Φ
100
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
Figure 9. Relative Radiant Power vs. Wavelength
Figure 10. Relative Radiant Intensity vs. Angular Displacement
-10 10 500 100
0
0.4
0.8
1.2
1.6
I;
e rel e rel
140
94 8020
I
F
= 20 mA
Φ
T
amb
- Ambient Temperature (°C)
780880
λ- Wavelenght (nm)
980
94 8000
- Relative Radiant Power
e
0
0.25
0.5
0.75
1.0
1.25
I
F
= 100 mA
pe
Φ
ee
)/
λ
()
λ
()
rel
=
λΦΦ (
Φ
0.4 0.2 0 0.2 0.4
I - Relative Radiant Intensity
e rel
0.6
94 8021
0.6
0.9
0.8
0°
30°
10°20°
40°
50°
60°
70°
80°
0.7
1.0
www.vishay.com
4
Document Number 81045
Rev. 1.6, 23-Feb-07
TSTA7300
Vishay Semiconductors
Package Dimensions in mm
96 12179
TSTA7300
Document Number 81045
Rev. 1.6, 23-Feb-07
Vishay Semiconductors
www.vishay.com
5
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
Disclaimer
Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
