TSTA7300 Vishay Semiconductors Infrared Emitting Diode, 870 nm, GaAlAs Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a high radiant intensity without external optics. Features * * * * High radiant power and radiant intensity Suitable for pulse operation Angle of half intensity = 12 Peak wavelength p = 875 nm * * * * High reliability Good spectral matching to Si photodetectors Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 948642 e4 Applications * Radiation source in near infrared range Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Symbol Value Reverse voltage Parameter Test condition VR 5 Unit V Forward current IF 100 mA 200 mA Peak forward current tp/T = 0.5, tp 100 s IFM Surge forward current tp 100 s IFSM 2.5 A PV 180 mW PV 500 mW Power dissipation Tcase 25 C Tj 100 C Storage temperature range Tstg - 55 to + 100 C Thermal resistance junction/ ambient RthJA 450 K/W Thermal resistance junction/ case RthJC 150 K/W Junction temperature Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward voltage Test condition IF = 100 mA, tp 20 ms Breakdown voltage IR = 100 A Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Document Number 81045 Rev. 1.6, 23-Feb-07 Symbol Min VF V(BR) Cj Typ. Max Unit 1.4 1.8 V 5 V 20 pF www.vishay.com 1 TSTA7300 Vishay Semiconductors Optical Characteristics Tamb = 25 C, unless otherwise specified Symbol Min Typ. Max Unit Radiant intensity Parameter IF = 100 mA, tp 20 ms Test condition Ie 10 20 50 mW/sr Radiant power IF = 100 mA, tp 20 ms e 10 mW Temp. coefficient of e IF = 100 mA TKe - 0.7 %/K 12 deg IF = 100 mA p 875 nm Angle of half intensity Peak wavelength Spectral bandwidth IF = 100 mA 80 nm Rise time IF = 1.5 A, tp/T = 0.01, tp 10 s tr 300 ns Fall time IF = 1.5 A, tp/T = 0.01, tp 10 s tf 300 ns 1 mm Virtual source diameter Typical Characteristics Tamb = 25 C, unless otherwise specified 10 1 R thJC 500 IF - Forward Current (A) PV - Power Dissipation (mW) 600 400 300 200 R thJA 100 0 25 50 75 100 0.05 0.1 0.2 10 -1 10 -2 125 Tamb - Ambient Temperature (C) 12790 94 8003 Figure 1. Power Dissipation vs. Ambient Temperature 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 Figure 3. Pulse Forward Current vs. Pulse Duration 10 4 100 R thJC 75 50 R thJA 25 0 0 94 7971 20 Tamb 40 60 80 100 - Ambient Temperature (C) Figure 2. Forward Current vs. Ambient Temperature www.vishay.com IF - Forward Current (mA) 125 IF - Forward Current (mA) t p /T= 0.01 10 0 0.5 0 2 I FSM = 2.5 A (Single Pause) t p = 100 s t p /T = 0.001 10 3 10 2 10 1 94 8005 0 1 2 3 4 V F - Forward Voltage (V) Figure 4. Forward Current vs. Forward Voltage Document Number 81045 Rev. 1.6, 23-Feb-07 TSTA7300 1.6 1.2 1.1 1.2 IF = 10 mA I e rel ; e rel V Frel - Relative Forward Voltage (V) Vishay Semiconductors 1.0 0.9 I F = 20 mA 0.8 0.4 0.8 0 -10 0 10 0.7 0 20 40 60 80 100 T amb - Ambient Temperature (C) 94 7990 Figure 5. Relative Forward Voltage vs. Ambient Temperature 140 100 Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature 1.25 e - Relative Radiant Power 1000 I e - Radiant Intensity (mW/sr) 50 Tamb - Ambient Temperature (C) 94 8020 100 10 1 1.0 0.75 0.5 0.25 I F = 100 mA e ( ) rel = e ( ) / e ( p ) 0.1 100 94 7974e 101 102 103 0 780 104 I F - Forward Current (mA) Figure 6. Radiant Intensity vs. Forward Current 980 880 - Wavelenght (nm) 94 8000 Figure 9. Relative Radiant Power vs. Wavelength 0 10 20 I e rel - Relative Radiant Intensity e - Radiant Power (mW) 1000 100 10 1 30 40 1.0 0.9 50 0.8 60 70 0.7 80 0.1 10 0 94 7972 10 1 10 2 10 3 I F - Forward Current (mA) Figure 7. Radiant Power vs. Forward Current Document Number 81045 Rev. 1.6, 23-Feb-07 0.6 10 4 0.4 0.2 0 0.2 0.4 0.6 94 8021 Figure 10. Relative Radiant Intensity vs. Angular Displacement www.vishay.com 3 TSTA7300 Vishay Semiconductors Package Dimensions in mm 96 12179 www.vishay.com 4 Document Number 81045 Rev. 1.6, 23-Feb-07 TSTA7300 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81045 Rev. 1.6, 23-Feb-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: TSTA7300