PD - 94654B IRF7493 HEXFET(R) Power MOSFET Applications High frequency DC-DC converters l Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max Qg (typ.) 80V 15m:@VGS=10V 35nC 1 8 S 2 7 S 3 6 4 5 S G A A D D D D SO-8 Top View Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage Parameter 80 V VGS Gate-to-Source Voltage 20 ID @ TC = 25C Continuous Drain Current, VGS @ 10V 9.3 ID @ TC = 70C Continuous Drain Current, VGS @ 10V 7.4 IDM Pulsed Drain Current 74 PD @TC = 25C Maximum Power Dissipation PD @TC = 70C Maximum Power Dissipation TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range c f f A W 2.5 1.6 W/C C 0.02 -55 to + 150 Thermal Resistance Parameter RJC RJA Junction-to-Lead Junction-to-Ambient Notes through www.irf.com f Typ. Max. --- 20 --- 50 Units are on page 9 1 7/29/03 IRF7493 Static @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS Drain-to-Source Breakdown Voltage 80 --- --- VDSS/TJ Breakdown Voltage Temp. Coefficient --- 0.074 --- RDS(on) Static Drain-to-Source On-Resistance --- 11.5 15 VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V VDS = VGS, ID = 250A IDSS Drain-to-Source Leakage Current --- --- 20 A VDS = 80V, VGS = 0V --- --- 250 IGSS Gate-to-Source Forward Leakage --- --- 200 Gate-to-Source Reverse Leakage --- --- -200 V VGS = 0V, ID = 250A mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 5.6A e VDS = 64V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V Dynamic @ TJ = 25C (unless otherwise specified) S VDS = 15V, ID = 5.6A gfs Qg Forward Transconductance 13 --- --- Total Gate Charge --- 35 53 ID = 5.6A Qgs Gate-to-Source Charge --- 5.7 --- VDS = 40V Qgd Gate-to-Drain Charge --- 12 --- VGS = 10V td(on) Turn-On Delay Time --- 8.3 --- VDD = 40V, tr Rise Time --- 7.5 --- ID = 5.6A td(off) Turn-Off Delay Time --- 30 --- tf Fall Time --- 12 --- VGS = 10V Ciss Input Capacitance --- 1510 --- VGS = 0V Coss Output Capacitance --- 320 --- Crss Reverse Transfer Capacitance --- 130 --- = 1.0MHz Coss Output Capacitance --- 1130 --- VGS = 0V, VDS = 1.0V, = 1.0MHz ns pF e RG = 6.2 VDS = 25V Coss Output Capacitance --- 210 --- VGS = 0V, VDS = 64V, = 1.0MHz Crss eff. Effective Output Capacitance --- 320 --- VGS = 0V, VDS = 0V to 64V g Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. --- Max. 180 Units mJ --- 5.6 A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current --- --- 9.3 ISM (Body Diode) Pulsed Source Current --- --- 74 VSD (Body Diode) Diode Forward Voltage --- --- 1.3 V trr Reverse Recovery Time --- 37 56 ns Qrr Reverse Recovery Charge --- 52 78 nC 2 c Conditions MOSFET symbol A showing the integral reverse p-n junction diode. TJ = 25C, IS = 5.6A, VGS = 0V e TJ = 25C, IF = 5.6A, VDD = 15V di/dt = 100A/s e www.irf.com IRF7493 100 100 VGS 15V 10V 8.0V 5.5V 5.0V 4.5V 4.0V BOTTOM 3.5V 10 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 1 3.5V 0.1 10 3.5V 1 20s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100.00 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current () 15V 10V 8.0V 5.5V 5.0V 4.5V 4.0V BOTTOM 3.5V 20s PULSE WIDTH Tj = 25C 0.01 VGS T J = 150C 10.00 T J = 25C 1.00 VDS = 25V 20s PULSE WIDTH 0.10 ID = 9.3A VGS = 10V 1.5 1.0 0.5 3.0 4.0 5.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 6.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7493 20 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds = C gd C oss = C ds + Cgd 10000 C, Capacitance (pF) VGS, Gate-to-Source Voltage (V) C rss ID= 5.6A SHORTED Ciss 1000 Coss Crss 100 VDS= 64V VDS= 40V VDS= 16V 16 12 8 4 0 10 1 10 0 100 10 VDS, Drain-to-Source Voltage (V) 100.0 40 50 60 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 30 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS(on) 100 T J = 150C 10.0 1.0 T J = 25C 10 100sec 0.1 0.1 0.2 0.4 0.6 0.8 1.0 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 1.2 1msec 1 VGS = 0V 4 20 QG Total Gate Charge (nC) Tc = 25C Tj = 150C Single Pulse 0 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7493 10 VDS VGS ID , Drain Current (A) 8 RD D.U.T. RG + -VDD 6 10V Pulse Width 1 s Duty Factor 0.1 % 4 Fig 10a. Switching Time Test Circuit 2 VDS 90% 0 25 50 75 100 125 150 T C , Case Temperature (C) 10% VGS Fig 9. Maximum Drain Current Vs. Ambient Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 Thermal Response ( Z thJC ) D = 0.50 0.20 0.10 10 0.05 0.02 1 0.01 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7493 0.030 RDS(on) , Drain-to -Source On Resistance ( ) RDS (on) , Drain-to-Source On Resistance ( ) 0.013 0.012 0.020 VGS = 10V 0.011 ID = 5.6A 0.010 0 20 40 60 80 4.0 ID , Drain Current (A) 8.0 12.0 16.0 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG VGS .2F QGS .3F D.U.T. + V - DS QGD 500 VG EAS, Single Pulse Avalanche Energy (mJ) 50K 12V VGS 3mA Charge IG ID Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 15V V(BR)DSS tp L VDS D.U.T RG IAS 20V I AS tp DRIVER + V - DD 0.01 Fig 15a&b. Unclamped Inductive Test circuit and Waveforms 6 TOP BOTTOM 400 ID 2.5A 4.5A 5.6A 300 200 100 0 A 25 50 75 100 125 150 Starting T J, Junction Temperature (C) Fig 15c. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRF7493 D.U.T Driver Gate Drive + + - - D.U.T. ISD Waveform Reverse Recovery Current RG P.W. Period * + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test D= VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer * * * * Period P.W. VDD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 17. Gate Charge Waveform www.irf.com 7 IRF7493 SO-8 Package Details D DIM B 5 A 8 6 7 6 H E 1 2 3 0.25 [.010] 4 A MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC 1.27 BAS IC e1 6X e e1 0.25 [.010] MAX .025 BAS IC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 A C A1 8X b MILLIMET ERS MAX A 5 INCHES MIN y 0.10 [.004] 8X L 8X c 7 C A B FOOT PRINT NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS THE LENGT H OF LEAD FOR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) INT ERNAT IONAL RECT IFIER LOGO 8 YWW XXXX F7101 DAT E CODE (YWW) Y = LAS T DIGIT OF T HE YEAR WW = WEEK LOT CODE PART NUMBER www.irf.com IRF7493 SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square copper board Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Starting TJ = 25C, L = 12mH RG = 25, IAS = 5.6A. Pulse width 300s; duty cycle 2%. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.7/03 www.irf.com 9