Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30TF-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
QM30TF-HB
•ICCollector current .......................... 30A
•VCEX Collector-emitter voltage ........... 600V
•hFE DC current gain.............................750
•Insulated Type
•UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
P
BuP
EuP
BuN
EuN
BvP
EvP
BvN
EvN
BwP
EwP
BwN
EwN
N
UVW
8
6.35
7.95
3.4
φ1.65
3.8
2.8
5.5
7.1
φ1.2
1
1
28.2
Tab#110, t=0.5(Fig. 2) Tab#250, t=0.8(Fig. 1)
17.5
7.5
107
81
20 21.5
21.5 17.5
45
21
7.5 14 7.5 14 7.5 16
18
30
2–φ5.5
EuPBuP BvP BwPEvP EwP
UVW
BuN EuN EvNBvN BwN EwN
93
LABEL
Fig. 1 Fig. 2
P
N
Note: All Transistor Units are 3-Stage Darlingtons.
Feb.1999
Conditions
IC=1A, VEB=2V
VEB=2V
Emitter open
Collector open
DC
DC (forward diode current)
TC=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Mounting screw M5
Typical value
Ratings
600
600
600
7
30
30
250
1.8
300
–40~+150
–40~+125
2500
1.47~1.96
15~20
230
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
—
—
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
g
MITSUBISHI TRANSISTOR MODULES
QM30TF-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Limits
Min.
—
—
—
—
—
—
750
—
—
—
—
—
—
Symbol
ICEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
VCE=600V, VEB=2V
VCB=600V, Emitter open
VEB=7V
IC=30A, IB=40mA
–IC=30A (diode forward voltage)
IC=30A, VCE=2.5V
VCC=300V, IC=30A, IB1=60mA, IB2=–0.6A
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
Conductive grease applied (per 1/6 module)
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
60
2.5
3.0
1.8
—
2.0
8.0
3.0
0.5
2.0
0.35
Feb.1999
–1
10
–3
10 –2
10 –1
10 0
10
3
10
2
10
1
10
0
10
4
10
3
10
2
10
1
10
0
10
7
5
4
3
2
–2
10
7
5
4
3
2
2.2 2.6 3.0 3.4 3.8 4.2
VCE=2.5V
Tj=25°C
1
10
7
5
4
3
2
0
10
7
5
4
3
2
–1
10 0
10 23457 1
10 23457 2
10
Tj=25°C
Tj=125°C
IB=40mA
VBE(sat)
VCE(sat)
100
80
60
40
20
0012345
Tj=25°C
I
B
=200mA
I
B
=20mA
I
B
=10mA
I
B
=0.5A
I
B
=100mA
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
VCE=2.5V
Tj=25°C
Tj=125°C
VCE=5.0V
0
753275327532
5
4
3
2
1
444
IC=10A
Tj=25°C
Tj=125°C
IC=30A
IC=20A
1
10
7
5
4
3
2
0
10
7
5
4
3
2
–1
10 0
10 23457 1
10 23457 2
10
tf
ton Tj=25°C
Tj=125°C
IB2=–0.6A
VCC=300V
IB1=60mA
ts
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
DC CURRENT GAIN hFE
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
BASE CURRENT IB (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)SWITCHING TIME ton, ts, tf (µs)
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
BASE CURRENT IB (A) COLLECTOR CURRENT IC (A)
MITSUBISHI TRANSISTOR MODULES
QM30TF-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Feb.1999
0
10
–1
10
–2
10
–3
10
0
10 1
10 2
10
2
10
1
10
0
10
0
10 1
10 2
10 3
10
–1
10
80
20
00 100 800
60
40
300 400 500
70
50
30
10
Tj=125°C
IB2=–0.6A
IB2=–3.0A
200 600 700
1
10
7
5
4
3
2
0
10
7
5
4
3
2
–1
10 –1
10 23457 0
10 23457 1
10
Tj=25°C
Tj=125°C
VCC=300V
IC=30A
IB1=60mA
tf
ts
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
TC=25°C
DC
100µ
S
1m
S
500µ
S
100
90
60
40
20
00 16020 40 60 80 100 120 140
80
10
70
50
30
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0.4 0.8 1.2 1.6 2.0 2.4
Tj=25°C
Tj=125°C
753275327532
0.5
0.4
0.3
0.1
0
444
23457
0.2
32 457
NON–REPETITIVE
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME ts, tf (µs)
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
TIME (s)
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –IC (A)
MITSUBISHI TRANSISTOR MODULES
QM30TF-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Zth (j–c) (°C/ W)
Feb.1999
0
10
0
10
1
10
–1
10
–2
10
–3
10
2
10
1
10
0
10
0
10
1
10
2
10
3
10
2
10
1
10
0
10
–1
10
–1
10
2
10
1
10 75432
0
10 75432
0
100
200
300
400
500
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
I
rr
t
rr
Q
rr
I
B2
=–0.6A
T
j
=25°C
T
j
=125°C
V
CC
=300V
I
B1
=60mA
753275
32
7532
2.0
1.6
0.8
0.4
0
444
23457
32
1.2
Irr (A), Qrr (µc)
SURGE COLLECTOR REVERSE CURRENT
–ICSM (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM30TF-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Zth (j–c) (°C/ W)
trr (µs)
