V
RRM
= 150 V - 200 V
I
F(AV)
= 120 A
Features
• High Surge Capability Three Tower Package
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Parameter Symbol MBRT120150(R) Unit
Repetitive peak reverse voltage V
RRM
150 V
RMS reverse voltage V
RMS
106 V
DC blocking voltage
V
DC
150
V
Conditions
200
Silicon Power
Schottk
y
Diode
MBRT120150 thru MBRT120200R
200
141
MBRT120200(R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
• Types from 150 V to 200 V V
RRM
DC
blocking
voltage
V
DC
150
V
Operating temperature T
j
-55 to 150 °C
Storage temperature T
stg
-55 to 150 °C
Parameter Symbol MBRT120150(R) Unit
Average forward current (per
pkg) I
F(AV)
120 A
Maximum instantaneous forward
voltage (per leg) 0.88
1
10
30
Thermal characteristics
Thermal resistance, junction-
case (per leg) R
ΘJC
0.80 °C/W
-55 to 150
200
1
MBRT120200(R)
0.80
T
j
= 150 °C
0.92
30
120
800 800
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
mA
V
T
j
= 25 °C
I
FM
= 60 A, T
j
= 25 °C
Conditions
-55 to 150
T
C
= 125 °C
A
T
j
= 100 °C 10
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
I
R
V
F
Peak forward surge current
(per leg) I
FSM
t
p
= 8.3 ms, half sine
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1
MBRT120150 thru MBRT120200R
www.genesicsemi.com/silicon-products/schottky-rectifiers/
2
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
MBRT120150 thru MBRT120200R
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3
