SCH2825
No. A1006-1/6
Features
•Composite type with a N-Channel Silicon MOSFET and a Schottky Barrier Diode contained in one package
facilitating high-density mounting.
•[MOSFET]
• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
•[SBD]
• Short reverse recovery time.
• Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
[MOSFET]
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID1.6 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 6.4 A
Allowable Power Dissipation PD
Mounted on a ceramic board (900mm
2
✕0.8mm) 1unit
0.6 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +125 °C
[SBD]
Repetitive Peak Reverse Voltage VRRM 30 V
Nonrepetitive Peak Reverse Surge Voltage VRSM 30 V
Average Output Current IO0.5 A
Surge Forward Current IFSM 50Hz sine wave, 1 cycle 3 A
Junction Temperature Tj --55 to +125 °C
Storage Temperature Tstg --55 to +125 °C
Marking : XA
SANYO Semiconductors
DATA SHEET
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA1006
D1207PE TI IM TC-00001031
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
SCH2825 MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
SCH2825
No. A1006-2/6
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
[MOSFET]
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V
Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 µA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward T ransfer Admittance ⏐yfs⏐VDS=10V, ID=800mA 0.6 1.0 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=800mA, VGS=10V 135 180 mΩ
RDS(on)2 ID=400mA, VGS=4V 230 330 mΩ
Input Capacitance Ciss VDS=10V, f=1MHz 88 pF
Output Capacitance Coss VDS=10V, f=1MHz 19 pF
Reverse T ransfer Capacitance Crss VDS=10V, f=1MHz 11 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 3.4 ns
Rise T ime trSee specified Test Circuit. 3.5 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 10.6 ns
Fall T ime tfSee specified Test Circuit. 4.0 ns
Total Gate Charge Qg VDS=10V, VGS=10V, ID=1.6A 2.0 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=1.6A 0.33 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=1.6A 0.29 nC
Diode Forward Voltage VSD IS=1.6A, VGS=0V 0.82 1.2 V
[SBD]
Reverse Voltage VRIR=0.5mA 30 V
Forward Voltage VFIF=0.5A 0.42 0.48 V
Reverse Current IRVR=15V 120 µA
Interterminal Capacitance C VR=10V, f=1MHz 13 pF
Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 10 ns
Package Dimensions Electrical Connection
unit : mm (typ)
7028-003
1.6
1.6
1.5
0.05
0.5
0.05
0.56
0.25
0.2 0.2
13
2
645
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
6 : Drain
SANYO : SCH6
654
123 Top view
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
6 : Drain
SCH2825
No. A1006-3/6
Switching Time Test Circuit trr Test Circuit
[MOSFET] [SBD]
Duty≤10%
50Ω100Ω10Ω
--5V trr
10µs
100mA100mA
10mA
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID=800mA
RL=18.75Ω
VDD=15V
VOUT
SCH2825
VIN
10V
0V
VIN
ID -- VDS ID -- VGS
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
0
0
0.2
1.2
0.8
1.6
0.6
0.4
1.4
1.0
1.8
0
0.2
1.2
0.8
1.6
0.6
0.4
1.4
1.0
2.0
1.8
1.00.80.60.1 0.2 0.4 0.90.70.3 0.5
IT13107
0 1.00.5 3.02.0 3.52.51.5 4.0
IT13108
Ta=
75
°
C
--2
5
°
C
VDS=10V
15.0V
4.0V
8.0V 6.0V
10.0V
25°C
VGS=2.5V
3.0V
3.5V
RDS(on) -- TaRDS(on) -- VGS
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C
IT13132
02468 1610 12 14
IT13131
390
90
150
120
180
240
300
210
270
330
360
390
60
90
150
120
180
240
300
210
270
330
360
Ta=25°C
--60 --40 --20 0 20 40 60 80 100 120 140 160
VGS=10V, ID=0.8A
VGS=4V, ID=0.4A
ID=0.4A
0.8A
[MOSFET] [MOSFET]
[MOSFET][MOSFET]
SCH2825
No. A1006-4/6
IS -- VSD
⏐
y
fs⏐ -- ID
Forward T ransfer Admittance, ⏐
y
fs⏐ -- S
Drain Current, ID -- A
Source Current, IS -- A
Diode Forward Voltage, VSD -- V
SW Time -- IDCiss, Coss, Crss -- VDS
A S O
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V Switching Time, SW Time -- ns
Ciss, Coss, Crss -- pF
Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V
0 0.2 0.6 1.00.4 0.8 2.01.41.2 1.6 1.8
0
1
2
7
5
4
3
9
8
6
10
IT13133
VDS=10V
ID=1.6A
IT13111
7
1.0
10
5
3
2
2
5
3
IT13113
235
0.1 1.0
35 27
td(on)
td(off)
tf
tr
VDD=15V
VGS=10V
0.001
1.0
0.01
23 57 2 0.1
357 2 1.0
357
2
7
5
3
2
3
0.1
0.01
2
7
7
5
3
VDS=10V
25
°
C
Ta=
--25
°
C
75
°
C
010 3015 20525
100
10
5
3
7
5
7
2
3
2
IT13114
Ciss
Coss
Crss
f=1MHz
IT13112
0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1.0
7
5
3
2
7
5
3
2
7
5
3
2
3
2
VGS=0V
75
°
C
25
°
C
Ta= --25
°
C
IT13134
2
3
5
7
2
3
5
7
2
2
3
5
7
0.1
1.0
10
0.01 223 5723 57 1.0 2357
100.1 0.1
Operation in this
area is limited by RDS(on).
100ms
100
µ
s
10ms
DC operation (Ta=25
°
C
)
1ms
35
IDP=6.4A
ID=1.6A
PW≤10µs
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm
2
✕0.8mm) 1unit
PD -- Ta
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
0
020 40
0.2
0.1
0.4
0.3
0.6
0.5
0.7
60 80 100 120 140 160
IT13135
Mounted on a ceramic board (900mm
2
✕0.8mm) 1unit
[MOSFET] [MOSFET]
[MOSFET] [MOSFET]
[MOSFET] [MOSFET]
[MOSFET]
SCH2825
No. A1006-5/6
10
2
3
5
7
3
5
7
100
0.1 1.0
23 57 10
23 5 23 577
C -- VR
0
00.1 0.2
0.30
0.35
0.25
0.15
0.10
0.05
0.20
0.3 0.4 0.5 0.6
PF(AV) -- IO
IT08187 IT07891
(2) (4) (3)(1)
f=1MHz
0
1.0
0.1
0.01 0.3 0.40.1 0.2
7
5
3
2
7
5
3
2
0.60.5
IF -- VF
Ta=125°C
100°C
75°C
50°C
25°C
IT07927 IT07928
0
1.0
2
5
3
7
2
5
3
7
2
5
3
7
2
5
3
7
2
5
3
7
10
100
1000
100000
10000
510 3015 20 25
IR -- VR
Ta=125
°
C
25
°
C
50
°
C
75°C
100°C
I
S
20ms
t
70.01 23 7
0.1
05237
1.0
523
3.0
3.5
2.0
1.0
2.5
1.5
0.5
ID00338
IFSM -- t
[SBD] [SBD]
[SBD][SBD]
[SBD]
Forward Voltage, VF -- V
Forward Current, IF -- A
Reverse Voltage, VR -- V
Reverse Current, IR -- µA
Average Output Current, IO -- A
(1) Rectangular wave θ=60°
(2) Rectangular wave θ=120°
(3) Rectangular wave θ=180°
(4) Sine wave θ=180°
Average Forward Power Dissipation, PF(AV) -- W
180°
360°
Sine wave
θ
360°
Rectangular wave
I
S
20ms
t
Time, t -- s
Surge Forward Current, IFSM(Peak) -- A
Reverse Voltage, VR -- V
Interterminal Capacitance, C -- pF
Current waveform 50Hz sine wave
SCH2825
No. A1006-6/6
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
PS
Note on usage : Since the SCH2825 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
This catalog provides information as of December, 2007. Specifications and information herein are subject
to change without notice.
