© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 9 1Publication Order Number:
MBRF2060CT/D
MBRF2060CTG
Switch-mode
Schottky Power Rectifier
The Switch−mode Power Rectifier employs the Schottky Barrier
principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for use as
rectifiers in very low−voltage, high−frequency switching power
supplies, free wheeling diodes and polarity protection diodes.
Features
•Highly Stable Oxide Passivated Junction
•Very Low Forward Voltage Drop
•Matched Dual Die Construction
•High Junction Temperature Capability
•High dv/dt Capability
•Excellent Ability to Withstand Reverse Avalanche Energy Transients
•Guardring for Stress Protection
•Epoxy Meets UL 94 V−0 @ 0.125 in
•Electrically Isolated. No Isolation Hardware Required.
•These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics:
•Case: Epoxy, Molded
•Weight: 1.9 Grams (Approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 60 VOLTS
2
1
3
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Device Package Shipping
TO−220 FULLPAK
CASE 221AH
3
12
MARKING DIAGRAM
AYWW
B2060G
A K A
MBRF2060CTG TO−220FP
(Pb−Free) 50 Units/Rail
A = Assembly Location
Y = Year
WW = Work Week
B2060 = Device Code
G = Pb−Free Package
AKA = Polarity Designator
ORDERING INFORMATION
MBRF2060CTG
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2
MAXIMUM RATINGS (Per Leg)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60 V
Average Rectified Forward Current
(Rated VR), TC = 133°C Total Device IF(AV) 10
20 A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz), TC = 133°CIFRM 20 A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 0.5 A
Operating Junction and Storage Temperature Range (Note 1) TJ, Tstg − 65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 10000 V/ms
RMS Isolation Voltage (t = 0.3 second, R.H. ≤ 30%, TA = 25°C) (Note 2) Per Figure 3 Viso1 4500 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
THERMAL CHARACTERISTICS (Per Leg)
Rating Symbol Value Unit
Maximum Thermal Resistance, Junction−to−Case RqJC 4.0 °C/W
Lead Temperature for Soldering Purposes: 1/8 in from Case for 5 Seconds TL260 °C
ELECTRICAL CHARACTERISTICS (Per Leg)
Characteristic Symbol Max Unit
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 10 Amp, TC = 25°C)
(iF = 10 Amp, TC = 125°C)
(iF = 20 Amp, TC = 25°C)
(iF = 20 Amp, TC = 125°C)
vF0.85
0.75
0.95
0.85
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated DC Voltage, TC = 25°C)
(Rated DC Voltage, TC = 125°C)
iR0.15
150
mA
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
2. Proper strike and creepage distance must be provided.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
Figure 1. Typical Forward Voltage Per Diode Figure 2. Typical Reverse Current Per Diode
0.01
0.1
1.0
10
120100806040200
VR, REVERSE VOLTAGE (VOLTS)
IR, REVERSE CURRENT (mA)
TJ = 150°C
TJ = 125°C
TJ = 100°C
TJ = 25°C
0.5
0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
1.0
3.0
5.0
10
20
50
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
TJ = 25°C
100°C
150°C
MBRF2060CTG
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4
PACKAGE DIMENSIONS
TO−220 FULLPACK, 3−LEAD
CASE 221AH
ISSUE F
DIM MIN MAX
MILLIMETERS
D14.70 15.30
E9.70 10.30
A4.30 4.70
b0.54 0.84
P3.00 3.40
e
L1 --- 2.80
c0.49 0.79
L12.50 14.73
b2 1.10 1.40
Q2.80 3.20
A2 2.50 2.90
A1 2.50 2.90
H1 6.60 7.10
E
Q
L1
b2
e
D
L
P
123
b
SEATING
PLANE
AA1
H1
A2
c
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE
PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO
EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE
MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.
LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00.
6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY
MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1
AND H1 FOR MANUFACTURING PURPOSES.
2.54 BSC
M
0.14 M
A
A
B
C
E/2
M
0.25 M
AB
3X
C
3X
B
NOTE 3
FRONT VIEW SIDE VIEW
SECTION D−D
ALTERNATE CONSTRUCTION SECTION A−A
ANOTE 6
A
DD
NOTE 6
H1
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
MBRF2060CT/D
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Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
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