HMC717LP3E v06.1113 AMPLIFIER - LOW NOISE - SMT GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz Typical Applications Features The HMC717LP3E is ideal for: Noise Figure: 1.1 dB * Fixed Wireless and LTE/WiMAX/4G Gain: 16.5 dB * BTS & Infrastructure Output IP3: +31.5 dBm * Repeaters and Femtocells Single Supply: +3V to +5V * Public Safety Radio 16 Lead 3x3mm QFN Package: 9 mm2 * Access Points Functional Diagram General Description The HMC717LP3E is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for fixed wireless and LTE/WiMAX/4G basestation front-end receivers operating between 4.8 and 6.0 GHz. The amplifier has been optimized to provide 1.1 dB noise figure, 16.5 dB gain and +31.5 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC717LP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. Electrical Specifi cations TA = +25 C, Rbias = 2k Ohms for Vdd = 5V, Rbias = 20k Ohms for Vdd = 3V [1] [2] Parameter Vdd = +3V Min. Frequency Range Gain Typ. 12 14.3 0.01 Noise Figure 1.25 Input Return Loss Output Third Order Intercept (IP3) Total Supply Current (Idd) 21 13.5 1.5 16.5 1.1 15 15 25.5 27 40 [3] Units GHz 21 dB dB/ C 1.4 13 14 31 Max. 0.01 13 12 Typ. 4.8 - 6.0 13 Output Return Loss Saturated Output Power (Psat) Min. 4.8 - 6.0 Gain Variation Over Temperature Output Power for 1 dB Compression (P1dB) Vdd = +5V Max. dB dB 18 dB 18.5 dBm 19.5 dBm 31.5 73 dBm 100 mA [1] Rbias resistor sets current, see application circuit herein [2] Vdd = Vdd1 = Vdd2 [3] Guaranteed by Design at 5GHz. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC717LP3E v06.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz Broadband Gain & Return Loss [1][2] Gain vs. Temperature [1] 25 25 S21 21 10 5 GAIN (dB) RESPONSE (dB) 15 S11 0 -5 -10 17 13 -15 9 -20 S22 -25 -30 1 2 3 4 5 6 7 FREQUENCY (GHz) 8 Vdd=5V 9 5 4.5 10 RETURN LOSS (dB) GAIN (dB) +85C 6.5 -40C 0 21 17 13 9 4.9 5.3 5.7 FREQUENCY (GHz) +25C 6.1 +85C -5 -10 -15 -20 4.5 6.5 4.9 -40C 5.3 5.7 FREQUENCY (GHz) +25C Output Return Loss vs. Temperature [1] 6.1 +85C 6.5 -40C Reverse Isolation vs. Temperature [1] 0 -20 -25 ISOLATION (dB) -5 RETURN LOSS (dB) 6.1 Input Return Loss vs. Temperature [1] 25 -10 -15 -20 -25 4.5 5.3 5.7 FREQUENCY (GHz) +25C Vdd=3V Gain vs. Temperature [2] 5 4.5 4.9 AMPLIFIER - LOW NOISE - SMT 20 -30 -35 -40 -45 4.9 5.3 5.7 FREQUENCY (GHz) +25C [1] Vdd = 5V, Rbias = 2k +85C 6.1 6.5 -40C -50 4.5 4.9 5.3 5.7 FREQUENCY (GHz) +25C +85C 6.1 6.5 -40C [2] Vdd = 3V, Rbias = 20k For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2 HMC717LP3E v06.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz Noise Figure vs. Temperature [1] [2] [4] P1dB vs. Temperature [1] [2] 24 2.1 20 1.5 P1dB (dBm) NOISE FIGURE (dB) Vdd=5V 22 1.8 1.2 0.9 18 16 14 0.6 +25C 12 -40C 0.3 10 Vdd=3V 0 4.5 4.9 5.3 5.7 FREQUENCY (GHz) 6.1 Vdd=5V 8 4.5 6.5 6.1 +85C 6.5 -40C Output IP3 vs. Temperature [1] [2] 40 Vdd=5V Vdd=5V 37 34 18 31 IP3 (dBm) 20 16 14 28 25 12 10 5.3 5.7 FREQUENCY (GHz) +25C 24 22 4.9 Vdd=3V Psat vs. Temperature [1] [2] Psat (dBm) AMPLIFIER - LOW NOISE - SMT +85C 22 Vdd=3V 19 Vdd=3V 8 4.5 4.9 5.3 5.7 FREQUENCY (GHz) +25C 6.1 +85C 16 4.5 6.5 5.3 5.7 FREQUENCY (GHz) +25C -40C Output IP3 and Total Supply Current vs. Supply Voltage @ 4800 MHz [3] 6.1 +85C 6.5 -40C Output IP3 and Total Supply Current vs. Supply Voltage @ 5900 MHz [3] 34 125 30 95 32 110 80 30 95 28 28 80 26 65 26 65 24 50 24 50 22 35 22 35 20 20 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 IP3 (dBm) 110 20 20 2.7 3.1 3.5 Voltage Supply (V) IP3-3V IP3-5V Idd (mA) 32 Idd (mA) IP3 (dBm) 4.9 3.9 4.3 4.7 5.1 5.5 Voltage Supply (V) Idd-3V Idd-5V IP3-3V IP3-5V Idd-3V Idd-5V [1] Vdd = 5V, Rbias = 2k [2] Vdd = 3V, Rbias = 20k [3] Rbias = 2k for Vdd = 5V, Rbias = 20k for Vdd = 3V [4] Measurement reference plane shown on evaluation PCB drawing. 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC717LP3E v06.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz Power Compression @ 4800 MHz [1] Power Compression @ 4800 MHz [2] 25 Pout (dBm), GAIN (dB), PAE (%) 20 15 10 5 0 -5 -10 -20 -15 -10 -5 INPUT POWER (dBm) Pout 0 20 15 10 5 0 -5 -10 -20 5 Gain -11 -8 -5 INPUT POWER (dBm) -2 1 Gain 4 PAE Power Compression @ 5900 MHz [2] 25 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) -14 Pout 25 20 15 10 5 0 -5 -16 -12 -8 -4 0 INPUT POWER (dBm) Pout 4 Gain 18 1.4 16 1.3 14 1.2 12 1.1 10 8 4.7 5.1 -10 -5 INPUT POWER (dBm) 0 Gain 5 PAE 22 1.6 20 1.5 18 1.4 16 1.3 14 1.2 1 12 1.1 0.9 10 5.5 Voltage Supply (V) [1] Vdd = 5V, Rbias = 2k -15 2.7 NOISE FIGURE (dB) 1.5 P1dB Gain 0 -5 Pout NOISE FIGURE (dB) 20 4.3 5 Gain, Power & Noise Figure vs. Supply Voltage @ 5900 MHz [3] 1.6 3.9 10 PAE 22 3.5 15 -10 -20 Gain, Power & Noise Figure vs. Supply Voltage @ 4800 MHz [3] 3.1 20 8 Gain (dB) & P1dB (dBm) -10 -20 Gain (dB) & P1dB (dBm) -17 PAE Power Compression @ 5900 MHz [1] 2.7 AMPLIFIER - LOW NOISE - SMT Pout (dBm), GAIN (dB), PAE (%) 25 1 3.1 3.5 3.9 4.3 4.7 5.1 5.5 Voltage Supply (V) NF [2] Vdd = 3V, Rbias = 20k P1dB Gain NF [3] Rbias = 2k for Vdd = 5V, Rbias = 20k for Vdd = 3V For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 HMC717LP3E v06.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz 2.2 30 17 2 28 14 1.8 11 1.6 24 8 1.4 22 5 1.2 GAIN (dB) IP3 (dBm) 20 26 20 100 10000 Rbias (Ohms) 100000 100 1000 10000 100000 Rbias (Ohms) Vdd=5V Vdd=3V Vdd=5V Gain, Noise Figure & Rbias @ 5900 MHz Output IP3 vs. Rbias @ 5900 MHz 35 32 GAIN (dB) 29 26 23 18 1.7 16 1.6 14 1.5 12 1.4 10 1.3 8 1.2 1.1 6 1000 Vdd=3V 10000 Rbias (Ohms) 100000 100 NOISE FIGURE (dB) IP3 (dBm) 1 2 1000 Vdd=3V 20 100 5 Gain, Noise Figure & Rbias @ 4800 MHz 32 NOISE FIGURE (dB) AMPLIFIER - LOW NOISE - SMT Output IP3 vs. Rbias @ 4800 MHz 1000 10000 100000 Rbias (Ohms) Vdd=5V Vdd=3V Vdd=5V For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC717LP3E v06.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz Vdd (V) Rbias (Ohms) Min Max 2k [1] 3V Open Circuit 150 [2] 5V Open Circuit Recommended Idd (mA) 2k 20 4.7k 26 20k 31 261 50 1k 65 2k 73 [1] With Vdd= 3V and Rbias < 2k may result in the part becoming conditionally stable which is not recommended. [2] With Vdd = 5V and Rbias<150 may result in the part becoming conditionally stable which is not recommended. Absolute Maximum Ratings Drain Bias Voltage (Vdd) +5.5V RF Input Power (RFIN) (Vdd = +5 Vdc) +20 dBm Channel Temperature 150 C Continuous Pdiss (T= 85 C) (derate 7.73 mW/C above 85 C) 0.5 W Thermal Resistance (channel to ground paddle) 129.5 C/W Storage Temperature -65 to +150 C Operating Temperature -40 to +85 C ESD Sensitivity (HBM) Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS AMPLIFIER - LOW NOISE - SMT Absolute Bias Resistor Range & Recommended Bias Resistor Values Typical Supply Current vs. Supply Voltage (Rbias = 2k for Vdd = 5V, Rbias = 20k for Vdd = 3V) Vdd (V) Idd (mA) 2.7 23 3.0 31 3.3 39 4.5 60 5.0 73 5.5 85 Note: Amplifi er will operate over full voltage ranges shown above. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 6 HMC717LP3E v06.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz AMPLIFIER - LOW NOISE - SMT Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish HMC717LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [2] Package Marking [3] 717 XXXX [1] Max peak reflow temperature of 235 C [2] Max peak reflow temperature of 260 C [3] 4-Digit lot number XXXX 7 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC717LP3E v06.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz Pin Descriptions Pin Number Description N/C No connection required. These pins may be connected to RF/DC ground without affecting performance. 2 RFIN This pin is DC coupled See the application circuit for off-chip component. 8 BIAS This pin is used to set the DC current of the amplifier by selection of the external bias resistor. See application circuit. 11 RFOUT This pin is AC coupled and matched to 50 Ohms 13, 15 Vdd2, Vdd1 Power supply voltage. Bypass capacitors are required. See application circuit. GND Package bottom must be connected to RF/DC ground Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com AMPLIFIER - LOW NOISE - SMT Function 1, 3 - 7, 9, 10, 12, 14, 16 8 HMC717LP3E v06.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz AMPLIFIER - LOW NOISE - SMT Application Circuit 9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC717LP3E v06.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz AMPLIFIER - LOW NOISE - SMT Evaluation PCB List of Materials for Evaluation PCB 122416 Item Description J1, J2 PCB Mount SMA Connector J3 - J5 DC Pins C1 10 nF Capacitor, 0402 Pkg. C2, C4 1000 pF Capacitor, 0603 Pkg. C3, C5 100 pF Capacitor, 0603 Pkg. C6 1.2 pF Capacitor, 0402 Pkg. R1 2k Ohm Resistor, 0402 Pkg. (Rbias) R2, R3 0 Ohm Resistor, 0402 Pkg. U1 HMC717LP3E Amplifier PCB [2] 120586 Evaluation PCB [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10