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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FAN7383 Half-Bridge Gate-Drive IC Features Description Floating Channel Designed for Bootstrap Operation to The FAN7383 is a half-bridge gate-drive IC with shutdown and programmable dead-time control functions for driving MOSFETs and IGBTs that operate up to +600V. +600V. Typically 350mA/650mA Sourcing/Sinking Current Driving Capability for Both Channels Extended Allowable Negative VS Swing to -9.8V for Signal Propagation at VDD=VBS=15V High-Side Output in Phase of IN Signal Built-in UVLO Functions for Both Channels Built-in Common-Mode dv/dt Noise Canceling Circuit Typically Internal 330ns Minimum Dead-Time Programmable Turn-On Delay Time Control (Dead-Time) Fairchild's high voltage process and common-mode noise canceling technique give stable operation of highside drivers under high-dv/dt noise circumstances. An advanced level-shift circuit allows high-side gate driver operation up to VS= -9.8V (typical) for VBS=15V. The UVLO circuits for both channels prevent malfunction when VDD and VBS are lower than the specified threshold voltage. Output drivers typically source/sink 350mA/650mA, respectively, which is suitable for all kinds of half and full bridge inverter. Applications SMPS Motor Drive Inverter 14-SOP Fluorescent Lamp Ballast HID Ballast 1 Ordering Information Part Number FAN7383M Package Pb-Free 14-SOP Yes Operating Temperature Range Packing Method (1) FAN7383MX(1) -40C ~ 125C Tube Tape & Reel Note: 1. These devices passed wave soldering test by JESD22A-111. (c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.3 www.fairchildsemi.com FAN7383 Half-Bridge Gate-Drive IC February 2007 FAN7383 Half-Bridge Gate-Drive IC Typical Application Circuit RBOOT VDC DBOOT VDD PWM PWM IC Shutdown Control 1 IN 2 VB 14 SD HO1 13 3 DT HO2 12 4 VDD VS 11 5 LO1 NC 10 6 LO2 NC 9 7 GND NC 8 RHON RHOFF CBOOT RDT RLOFF RLON FAN7383 Rev.01 Figure 1. Application Circuit for Half-Bridge Switching Power Supply VDC VCC VDD PHA VDD VB VB HO1 HO1 HO2 HO2 IN VS VS PHB Forward IN M SD SD DC Motor Controller SD FAN7383 FAN7383 LO1 DT Reverse LO1 DT LO2 GND LO2 GND FAN7383 Rev.01 Figure 2. Application Circuit for Full-Bridge DC Motor Driver (c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.3 www.fairchildsemi.com 2 14 VB 13 HO1 12 HO2 11 VS 4 VDD 5 LO1 6 LO2 7 GND UVLO 1 SD 2 SHOOT THOUGH PREVENTION DT 3 DEAD-TIME { DTMIN=330nsec } R DRIVER PULSE GENERATOR SCHMITT TRIGGER INPUT IN NOISE CANCELLER R S Q HS(ON/OFF) UVLO DELAY DRIVER LS(ON/OFF) FAN7383 Rev:01 Figure 3. Functional Block Diagram of FAN7383 (c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.3 www.fairchildsemi.com 3 FAN7383 Half-Bridge Gate-Drive IC Internal Block Diagram FAN7383 Half-Bridge Gate-Drive IC Pin Configuration 1 14 VB SD 2 13 HO1 DT 3 12 HO2 VDD 4 11 VS LO1 5 10 NC LO2 6 9 NC GND 7 8 NC FAN7383 IN FAN7383 Rev:00 Figure 4. Pin Configuration (Top View) Pin Definitions Pin # Name Description 1 IN 2 SD Logic Input for Shutdown (Active Low) 3 DT Programmable Dead-Time Control with External Resistor 4 VDD Low-Side Supply Voltage 5 LO1 Low-Side Driver Source Output 6 LO2 Low-Side Driver Sink Output 7 GND Ground 8 N.C. Not connected 9 N.C. Not connected 10 N.C. 11 VS 12 HO2 High-Side Driver Sink Output 13 HO1 High-Side Driver Source Output 14 VB Logic Input for Gate Driver Not connected High-Side Floating Supply Return High-Side Floating Supply (c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.3 www.fairchildsemi.com 4 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25C unless otherwise specified. Symbol Parameter VS High-side offset voltage VB High-side floating supply voltage Min. Max. Unit VB-25 VB+0.3 V -0.3 625 V VHO High-side floating output voltage HO1, HO2 VS-0.3 VB+0.3 V VDD Low-side and logic fixed supply voltage -0.3 25 V VLO Low-side output voltage LO1, LO2 -0.3 VDD+0.3 V VIN Logic input voltage (IN) -0.3 VDD+0.3 V VSD Shutdown logic input voltage -0.3 VDD+0.3 V VDT Dead-time control voltage -0.3 5.0 V GND Logic ground VDD-25 VDD+0.3 V 50 V/ns dVS/dt PD(2)(3)(4) Allowable offset voltage slew rate Power dissipation 1.0 W JA Thermal resistance, junction-to-ambient 110 C/W TJ Junction temperature 150 C TSTG Storage temperature 150 C Notes: 2. When mounted on 76.2 x 114.3 x 1.6mm PCB. (FR-4 glass epoxy material). 3. Please refer to: JESD51-2: Integral circuits thermal test method environmental conditions - Natural convection JESD51-3: Low effective thermal conductivity test board for leaded surface mount packages 4. Do not exceed PD under any circumstances. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to Absolute Maximum Ratings. Symbol Parameter Condition Min. Max. Unit VB High-side floating supply voltage VS+15 VS+20 V VS High-side floating supply offset voltage 6-VDD 600 V VDD Low-side supply voltage 15 20 V VHO High-side (HO) output voltage VS VB V VLO Low-side (LO) output voltage GND VDD V VIN Logic input voltage (IN) GND VDD V TA Ambient temperature -40 125 C (c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.3 www.fairchildsemi.com 5 FAN7383 Half-Bridge Gate-Drive IC Absolute Maximum Ratings VBIAS (VDD, VBS) = 15.0V, RDT = GND, TA = 25C, unless otherwise specified. The VIN and IIN parameters are referenced to GND. The VO and IO parameters are referenced to VS and GND and are applicable to the respective outputs HO and LO. Symbol Parameter Condition Min. Typ. Max. Unit SUPPLY CURRENT SECTION IQBS Quiescent VBS supply current VIN=0V or 5V 35 90 IQDD Quiescent VDD supply current VIN=0V or 5V, RDT=0 650 900 ISD(5) VDD supply current at shutdown mode SD=GND 650 900 IPBS Operating VBS supply current fIN=20kHz,rms value 400 700 IPDD Operating VDD supply current fIN=20kHz,rms value, RDT=0 950 1200 ILK Offset supply leakage current VB=VS=600V A 10 POWER SUPPLY SECTION VDDUV+ VBSUV+ VDD and VBS supply under-voltage positive going threshold 10.7 11.6 12.5 VDDUVVBSUV- VDD and VBS supply under-voltage negative going threshold 10.0 10.8 11.6 V VDDUVH VBSUVH VDD and VBS supply under-voltage lockout hysteresis 1.0 V 0.6 V 0.8 GATE DRIVER OUTPUT SECTION VOH High-level output voltage, VBIAS-VO IO=20mA VOL Low-level output voltage, VO IO+ Output high short-circuit pulse current VO=0V, VIN=5V with PW<10s 250 350 mA IO- Output low short-circuit pulsed current VO=15V, VIN=0V with PW<10s 500 650 mA VS Allowable negative VS pin voltage for IN signal propagation to HO -9.8 -7.0 V LOGIC INPUT SECTION (INPUT AND SHUTDOWN) VIH Logic "1" input voltage VIL Logic "0" input voltage IIN+ Logic "1" input bias current VIN=5V VIN=0V IIN- Logic "0" input bias current SD+ Shutdown "1" input voltage SD- Shutdown "0" input voltage RPD Input pull-down resistance 2.9 V 50 2.9 1.2 V 100 A 2.0 A 1.2 V V 100 K Note: 5.This parameter guaranteed by design. (c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.3 www.fairchildsemi.com 6 FAN7383 Half-Bridge Gate-Drive IC Electrical Characteristics VBIAS (VDD, VBS) = 15.0V, VS = GND, CL=1000pF, RDT = GND, and TA = 25C, unless otherwise specified. Symbol tON tOFF Parameter Turn-on propagation delay Min. Typ. Max. Unit VS=0V 500 670 170 250 Turn-on rise time 50 100 tF Turn-off fall time 30 80 Shutdown propagation delay 100 180 tSD DT1, DT2 Dead-time LO OFF to HO ON and HO OFF to LO ON DMT Dead-time matching VS=0V or 600V (5) tR (5) Turn-off propagation delay Conditions ns RDT=0 250 330 420 ns RDT=200K 1.20 1.68 2.30 s RDT=0 0 60 RDT=200K 0 150 ns Note: 5.These parameters guaranteed by design. (c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.3 www.fairchildsemi.com 7 FAN7383 Half-Bridge Gate-Drive IC Dynamic Electrical Characteristics 11.6 11.4 11.8 VDDUV- ,VBSUV- [V] VDDUV+ ,VBSUV+ [V] 12.0 11.6 11.4 11.2 11.2 11.0 10.8 10.6 10.4 11.0 10.2 10.8 -40 -20 0 20 40 60 80 100 10.0 -40 120 -20 0 1000 100 800 80 600 40 200 20 0 20 40 60 60 80 100 120 60 400 -20 40 Figure 6. VDD/VBS UVLO (-) vs. Temperature IQBS [A] IQDD [A] Figure 5. VDD/VBS UVLO (+) vs. Temperature -40 20 Temperature [C] Temperature [C] 80 100 0 -40 120 -20 0 Temperature [C] 20 40 60 80 100 120 Temperature [C] Figure 7. VDD Quiescent Current vs. Temperature Figure 8. VBS Quiescent Current vs. Temperature 1600 800 1400 IPBS [A] IPDD [A] 600 1200 1000 400 800 200 600 400 -40 -20 0 20 40 60 80 100 0 -40 120 Temperature [C] 0 20 40 60 80 100 120 Temperature [C] Figure 9. VDD Operating Current vs. Temperature Figure 10. VBS Operating Current vs. Temperature (c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.3 -20 www.fairchildsemi.com 8 FAN7383 Half-Bridge Gate-Drive IC Typical Characteristics 3.0 100 2.5 2.0 VIH [V] IIN+ [A] 80 60 1.5 40 1.0 20 0 -40 0.5 -20 0 20 40 60 80 100 0.0 -40 120 -20 0 Figure 11. Logic Input Current vs. Temperature 2.5 2.5 SD+ BAR [V] 3.0 VIL [V] 2.0 1.5 0.5 0.5 20 40 60 80 100 0.0 -40 120 -20 0 Temperature [C] 100 120 20 40 60 80 100 120 Temperature [C] Figure 14. SD Positive Threshold vs. Temperature Figure 13. Logic Input Low Voltage vs. Temperature 100 3.0 2.5 80 2.0 tR [nsec] SD- BAR [V] 80 1.5 1.0 0 60 2.0 1.0 -20 40 Figure 12. Logic Input High Voltage vs. Temperature 3.0 0.0 -40 20 Temperature [C] Temperature [C] 1.5 60 40 1.0 20 0.5 0.0 -40 -20 0 20 40 60 80 100 0 -40 120 Temperature [C] 0 20 40 60 80 100 120 Temperature [C] Figure 15. SD Negative Threshold vs. Temperature Figure 16. Rising Time vs. Temperature (c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.3 -20 www.fairchildsemi.com 9 FAN7383 Half-Bridge Gate-Drive IC Typical Characteristics (Continued) 700 80 600 tON [nsec] tF [nsec] 60 40 20 500 400 300 0 -40 -20 0 20 40 60 80 100 200 -40 120 -20 0 20 40 60 80 100 120 Temperature [C] Temperature [C] Figure 17. Falling Time vs. Temperature Figure 18. Turn-on Delay Time vs. Temperature 300 400 DT1, RDT= 0 [nsec] tOFF [nsec] 250 200 150 100 360 320 280 50 0 -40 -20 0 20 40 60 80 100 240 -40 120 -20 0 20 2.0 2.2 1.6 Deadtime [S] DT1, RDT= 200k [nsec] 2.4 2.0 1.8 1.6 80 100 120 1.2 0.8 0.4 1.4 -20 0 20 40 60 80 100 0.0 0 120 20 40 60 80 100 120 140 160 180 200 RDT [kohm] Temperature [C] Figure 21. Dead Time (RDT=200k) vs. Temperature Figure 22. RDT vs. Dead Time (c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.3 60 Figure 20. Dead-Time (RDT=0k) vs. Temperature Figure 19. Turn-off Falling Time vs. Temperature 1.2 -40 40 Temperature [C] Temperature [C] www.fairchildsemi.com 10 FAN7383 Half-Bridge Gate-Drive IC Typical Characteristics (Continued) FAN7383 Half-Bridge Gate-Drive IC Typical Characteristics (Continued) -6 VS [V] -8 -10 -12 -14 -40 -20 0 20 40 60 80 100 120 Temperature [C] Figure 23. Allowable Negative VS Voltage for Signal Propagation to High Side vs. Temperature (c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.3 www.fairchildsemi.com 11 FAN7383 Half-Bridge Gate-Drive IC Switching Time Definitions +15V 10F FAN7383 100nF SD LO1, 2 1 IN 2 +15V 10F 100nF VB 14 SD HO1 13 3 DT HO2 12 4 VDD VS 11 5 LO1 NC 10 6 LO2 NC 9 7 GND NC 8 HO1, 2 1nF 1nF FAN7383 Rev:00 Figure 24. Switching Time Test Circuit IN HO1, 2 LO1, 2 SD DT1 Shutdown DT2 DT2 DT1 Shutdown DT1 FAN7383 Rev:00 Figure 25. Input / Output Waveforms IN 50% 50% tOFF 90% tON LO1, 2 10% 90% HO1, 2 tON tOFF 10% FAN7383 Rev:00 Figure 26. Switching Time Waveform Definitions (c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.3 www.fairchildsemi.com 12 FAN7383 Half-Bridge Gate-Drive IC 50% SD 90% HO or LO tSD FAN7383 Rev:00 Figure 27. Shutdown Waveform Definition 90% HO 10% DT1 DT2 90% LO MDT= DT1-DT2 10% FAN7383 Rev:00 Figure 28. Dead-Time Waveform Definition (c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.3 www.fairchildsemi.com 13 1. Normal Operating Consideration 3. Layout Consideration The FAN7383 is a single PWM input half-bridge gatedrive IC with programmable dead-time and shutdown function. For optimum performance of high- and low-side gate drivers, cannot be achieved without taking due considerations must be taken during printed circuit board (PCB) layout. The dead-time is set with a resistor (RDT) at the DT pin. The wide dead-time programming range provides the flexibility to optimize drive signal timing for a selection of switching devices (MOSFET or IGBT) and applications. 3.1 Supply Capacitors If the output stages are able to quickly turn on the switching device with high value of current, the supply capacitors must be placed as close as possible to the device pins (VDD and GND for the ground-tied supply, VB and VS for the floating supply) to minimize parasitic inductance and resistance. The turn-on time delay circuitry (Dead-Time) accommodates resistor values from 0 to 200k with a dead-time proportional to the RDT resistance. Grounding the DT pin programs the FAN7383 to drive both outputs with minimum dead time. 3.2 Gate Drive Loop If the SD pin voltage decrease below 1.2V in normal operation, the IC enters the shutdown mode. Current loops behave like an antenna, able to receive and transmit noise. To reduce the noise coupling/ emission and improve the power switch turn-on and off performances, gate drive loops must be reduced as much as possible. 2. Under-Voltage Lockout (UVLO) The FAN7383 has an under-voltage lockout (UVLO) protection circuitry for high and low side channels to prevent malfunction when VDD or VBS is lower than the specified threshold voltage. The UVLO circuitry monitors the supply voltage (VDD) and bootstrap capacitor voltage (VBS) independently. 3.3 Ground Plane Ground plane must not be placed under or nearby the high-voltage floating side to minimize noise coupling. (c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.3 www.fairchildsemi.com 14 FAN7383 Half-Bridge Gate-Drive IC Typical Application Information FAN7383 Half-Bridge Gate-Drive IC Package Dimensions 14-SOP Dimensions are in millimeters unless otherwise noted. MIN #8 MAX0.10 MAX0.004 1.80 MAX 0.071 5.72 0.225 8 3.95 0.20 0.156 0.008 0~ +0.10 0.20 -0.05 +0.004 0.008 -0.002 6.00 0.30 0.236 0.012 1.27 0.050 #7 +0.10 0.406 -0.05 +0.004 0.016 -0.002 #14 8.70 MAX 0.343 #1 8.56 0.20 0.337 0.008 ( 0.47 ) 0.019 1.55 0.10 0.061 0.004 0.05 0.002 0.60 0.20 0.024 0.008 January 2001, Rev. A Figure 29. 14-Lead Small Outline Package (SOP) (c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.3 www.fairchildsemi.com 15 (R) ACEx Across the board. Around the world. ActiveArray Bottomless Build it Now CoolFET CROSSVOLT CTLTM Current Transfer LogicTM DOME 2 E CMOS (R) EcoSPARK EnSigna FACT Quiet SeriesTM (R) FACT (R) FAST FASTr FPS (R) FRFET GlobalOptoisolator GTO (R) PowerTrench Programmable Active Droop (R) QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect ScalarPump SMART START (R) SPM SuperFET SuperSOT-3 SuperSOT-6 SuperSOT-8 TCM (R) The Power Franchise HiSeC i-Lo ImpliedDisconnect IntelliMAX ISOPLANAR MICROCOUPLER MicroPak MICROWIRE MSX MSXPro OCX OCXPro (R) OPTOLOGIC (R) OPTOPLANAR PACMAN POP (R) Power220 (R) Power247 PowerEdge PowerSaver (R) TinyLogic TINYOPTO TinyPower TinyWire TruTranslation PSerDes (R) UHC UniFET VCX Wire TM TinyBoost TinyBuck DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I23 (c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.3 www.fairchildsemi.com 16 FAN7383 Half-Bridge Gate-Drive IC TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. 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