PD - 95483C IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF Features l l l l l l l HEXFET(R) Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D RDS(on) = 8.5m G Description ID = 75A S This HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. VDSS = 60V TO-220AB IRF1010EZPbF D2Pak TO-262 IRF1010EZSPbF IRF1010EZLPbF Absolute Maximum Ratings Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) Parameter 84 A ID @ TC = 100C Continuous Drain Current, VGS @ 10V (See Fig. 9) 60 ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) 75 IDM Pulsed Drain Current 340 PD @TC = 25C Maximum Power Dissipation 140 W Linear Derating Factor VGS Gate-to-Source Voltage 0.90 20 W/C V EAS Single Pulse Avalanche Energy (Thermally Limited) 99 mJ c EAS (tested) Single Pulse Avalanche Energy Tested Value IAR Avalanche Current EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range c i d h 180 See Fig.12a,12b,15,16 A mJ C -55 to + 175 Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 10 lbf*in (1.1N*m) Thermal Resistance Typ. Max. Units RJC Junction-to-Case Parameter --- 1.11 C/W RCS Case-to-Sink, Flat, Greased Surface 0.50 --- RJA Junction-to-Ambient --- 62 RJA Junction-to-Ambient (PCB Mount, steady state) --- 40 HEXFET(R) j is a registered trademark of International Rectifier. www.irf.com 1 07/06/10 IRF1010EZ/S/LPbF Static @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS VDSS/TJ RDS(on) VGS(th) Min. Typ. Max. Units Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance 60 --- --- 2.0 200 --- --- --- --- --- --- --- --- --- --- --- --- LS Internal Source Inductance --- 7.5 --- Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- --- --- 2810 420 200 1440 320 510 --- --- --- --- --- --- gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current --- --- 0.058 --- 6.8 8.5 --- 4.0 --- --- --- 20 --- 250 --- 200 --- -200 58 86 19 28 21 32 19 --- 90 --- 38 --- 54 --- 4.5 --- V V/C m V S A nA nC ns nH Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 51A VDS = VGS, ID = 100A VDS = 25V, ID = 51A VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V ID = 51A VDS = 48V VGS = 10V VDD = 30V ID = 51A RG = 7.95 VGS = 10V D Between lead, f f f 6mm (0.25in.) from package pF G S and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 48V, = 1.0MHz VGS = 0V, VDS = 0V to 48V Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current --- --- 84 ISM (Body Diode) Pulsed Source Current --- --- 340 VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time --- --- --- --- 41 54 1.3 62 81 c Conditions MOSFET symbol A V ns nC showing the integral reverse D G p-n junction diode. TJ = 25C, IS = 51A, VGS = 0V TJ = 25C, IF = 51A, VDD = 30V di/dt = 100A/s S f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Coss eff. is a fixed capacitance that gives the same charging time Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). as Coss while VDS is rising from 0 to 80% VDSS . Limited by TJmax, starting TJ = 25C, L = 0.077mH, Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive RG = 25, IAS = 51A, VGS =10V. Part not avalanche performance. recommended for use above this value. This value determined from sample failure population. 100% ISD 51A, di/dt 260A/s, VDD V(BR)DSS, tested to this value in production. TJ 175C. This is applied to D2Pak, when mounted on 1" square PCB Pulse width 1.0ms; duty cycle 2%. ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRF1010EZ/S/LPbF 10000 1000 1000 BOTTOM 100 100 10 1 4.5V 1 10 BOTTOM 10 4.5V 1 20s PULSE WIDTH Tj = 175C 20s PULSE WIDTH Tj = 25C 0.1 0.1 0.1 100 0.01 V DS, Drain-to-Source Voltage (V) 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 100 100 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current () VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V T J = 175C 10 T J = 25C 1 VDS = 25V 60s PULSE WIDTH 90 T J = 25C 80 70 60 50 T J = 175C 40 30 20 10 0 0.1 4 5 6 7 8 9 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 0 20 40 60 80 100 120 140 ID,Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance vs. Drain Current 3 IRF1010EZ/S/LPbF 100000 12.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED ID= 51A VGS, Gate-to-Source Voltage (V) C rss = C gd C, Capacitance(pF) C oss = C ds + C gd 10000 Ciss 1000 Coss Crss VDS= 48V VDS= 30V 10.0 VDS= 12V 8.0 6.0 4.0 2.0 0.0 100 1 10 100 0 0.10 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 50 60 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100sec 100 T J = 175C T J = 25C VGS = 0V 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 40 10000 100.00 1.00 30 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 10.00 20 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 1000.00 10 1msec 10 1 10msec Tc = 25C Tj = 175C Single Pulse 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF1010EZ/S/LPbF 100 90 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 Limited By Package ID, Drain Current (A) 80 70 60 50 40 30 20 10 0 ID = 84A VGS = 10V 2.0 1.5 1.0 0.5 25 50 75 100 125 150 -60 -40 -20 0 175 T C , Case Temperature (C) 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) Fig 10. Normalized On-Resistance vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 J 0.02 0.01 R1 R1 J 1 R2 R2 2 1 2 Ci= i/Ri Ci i/Ri 0.01 R3 R3 3 C 3 Ri (C/W) i (sec) 0.415 0.000246 0.410 0.000898 0.285 0.009546 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF1010EZ/S/LPbF 400 DRIVER L VDS D.U.T RG VGS 20V + V - DD IAS A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) 15V ID TOP 5.7A 9.1A BOTTOM 51A 350 300 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. + V - DS VGS(th) Gate threshold Voltage (V) 4.5 4.0 3.5 3.0 ID = 250A 2.5 2.0 1.5 1.0 -75 -50 -25 VGS 0 25 50 75 100 125 150 175 T J , Temperature ( C ) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 Fig 14. Threshold Voltage vs. Temperature www.irf.com IRF1010EZ/S/LPbF 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses 0.01 0.05 10 0.10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 100 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 51A 75 50 25 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 16. Maximum Avalanche Energy vs. Temperature www.irf.com 175 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 7 IRF1010EZ/S/LPbF D.U.T Driver Gate Drive + * * * * D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period * RG D= VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - - Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V DS VGS RG RD D.U.T. + -VDD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRF1010EZ/S/LPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS SEMBLED ON WW 19, 2000 IN T HE AS S EMBLY LINE "C" Note: "P" in assembly line position indicates "Lead - Free" INTERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 0 = 2000 WEEK 19 LINE C Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1010ez.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRF1010EZ/S/LPbF D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASS EMBLY LINE "L" INTERNAT IONAL RECT IFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE YEAR 0 = 2000 WEEK 02 LINE L OR INT ERNAT IONAL RECT IFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE P = DESIGNATES LEAD - FREE PRODUCT (OPTIONAL) YEAR 0 = 2000 WEEK 02 A = ASS EMB LY SITE CODE Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1010ez.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com IRF1010EZ/S/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 AS S EMBLE D ON WW 19, 1997 IN THE AS S E MBLY LINE "C" INTERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBE R DATE CODE YEAR 7 = 1997 WEE K 19 LINE C OR INTERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER DATE CODE P = DES IGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEE K 19 A = AS S EMBLY S ITE CODE Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1010ez.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 IRF1010EZ/S/LPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 3 4 TO-220AB package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/2010 12 www.irf.com