Preliminary Data Sheet NESG3032M14 R09DS0048EJ0300 Rev.3.00 Sep 18, 2012 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold (M14, 1208 PKG) <R> FEATURES * The NESG3032M14 is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz * Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz * SiGe HBT technology (UHS3) adopted: fmax = 110 GHz * 4-pin lead-less minimold (M14, 1208 PKG) <R> ORDERING INFORMATION Part Number Order Number NESG3032M14 NESG3032M14-A Package Quantity 4-pin lead-less minimold 50 pcs * 8 mm wide embossed taping (M14, 1208 PKG) (Non reel) * Pin 1 (Collector), Pin 4 (NC) face the (Pb-Free) NESG3032M14-T3 NESG3032M14-T3-A Supplying Form perforation side of the tape 10 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 12.0 V Collector to Emitter Voltage VCEO 4.3 V Emitter to Base Voltage VEBO 1.5 V IC 35 mA 150 mW Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Note Mounted on 1.08 cm2 x 1.0 mm (t) glass epoxy PWB CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0048EJ0300 Rev.3.00 Sep 18, 2012 Page 1 of 13 NESG3032M14 <R> ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 - - 100 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 - - 100 nA VCE = 2 V, IC = 6 mA 220 300 380 - S21e VCE = 2 V, IC = 15 mA, f = 2.0 GHz 15.0 17.5 - dB Noise Figure NF VCE = 2 V, IC = 6 mA, f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt - 0.60 0.85 dB Associated Gain Ga VCE = 2 V, IC = 6 mA, f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt - 17.5 - dB VCB = 2 V, IE = 0, f = 1 MHz - 0.15 0.25 pF DC Current Gain hFE Note 1 RF Characteristics 2 Insertion Power Gain Reverse Transfer Capacitance Maximum Stable Power Gain Cre Note 2 Note 3 MSG VCE = 2 V, IC = 15 mA, f = 2.0 GHz Gain 1 dB Compression Output Power PO (1 dB) VCE = 3 V, IC (set) = 20 mA, f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt 3rd Order Intermodulation Distortion Output Intercept Point OIP3 VCE = 3 V, IC (set) = 20 mA, f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt 17.5 20.5 - dB - 12.5 - dBm - 24.0 - dBm Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded 3. MSG = <R> S21 S12 hFE CLASSIFICATION Rank FB/YFB Marking zN hFE Value 220 to 380 R09DS0048EJ0300 Rev.3.00 Sep 18, 2012 Page 2 of 13 NESG3032M14 TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation Ptot (mW) 250 Mounted on Glass Epoxy PWB (1.08 cm2 x 1.0 mm (t) ) 200 150 100 50 0 75 100 125 0.20 0.15 0.10 0.05 0 2 4 6 8 10 Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 1 V Collector Current IC (mA) 0.1 0.01 0.001 0.5 0.6 0.7 0.8 0.9 1.0 12 VCE = 2 V 10 1 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 40 VCE = 3 V 200 A 35 10 1 0.1 0.01 0.001 0.0001 0.4 f = 1 MHz 0.25 Ambient Temperature TA (C) 1 100 0.30 0 150 10 0.0001 0.4 Collector Current IC (mA) 50 Collector Current IC (mA) Collector Current IC (mA) 100 25 Reverse Transfer Capacitance Cre (pF) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) 180 A 30 160 A 140 A 25 120 A 20 100 A 80 A 15 60 A 10 40 A 5 IB = 20 A 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Remark The graphs indicate nominal characteristics. R09DS0048EJ0300 Rev.3.00 Sep 18, 2012 Page 3 of 13 NESG3032M14 DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 1 000 100 10 0.1 VCE = 2 V DC Current Gain hFE DC Current Gain hFE VCE = 1 V 1 10 100 Collector Current IC (mA) 100 10 0.1 1 10 100 Collector Current IC (mA) DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 DC Current Gain hFE VCE = 3 V 100 10 0.1 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0048EJ0300 Rev.3.00 Sep 18, 2012 Page 4 of 13 NESG3032M14 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 30 Gain Bandwidth Product fT (GHz) VCE = 1 V f = 2 GHz 25 20 15 10 5 0 1 10 20 15 10 5 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Gain Bandwidth Product fT (GHz) 10 5 10 100 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 0 1 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 15 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 25 40 VCE = 1 V IC = 15 mA 35 30 MSG MAG 25 20 MAG 15 MSG |S21e|2 10 5 0 0.1 1 10 100 Collector Current IC (mA) Frequency f (GHz) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 40 VCE = 2 V IC = 15 mA 35 MSG MAG 25 MAG 20 MSG |S21e|2 10 5 0 0.1 20 Collector Current IC (mA) VCE = 3 V f = 2 GHz 15 25 Collector Current IC (mA) 30 30 VCE = 2 V f = 2 GHz 0 1 100 1 10 100 Frequency f (GHz) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Gain Bandwidth Product fT (GHz) 30 40 VCE = 3 V IC = 15 mA 35 30 MSG MAG 25 MAG 20 MSG 15 |S21e|2 10 5 0 0.1 1 10 100 Frequency f (GHz) Remark The graphs indicate nominal characteristics. R09DS0048EJ0300 Rev.3.00 Sep 18, 2012 Page 5 of 13 NESG3032M14 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT VCE = 1 V f = 0.5 GHz 25 MSG |S21e|2 20 15 10 5 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 30 25 VCE = 1 V f = 1 GHz MSG MAG 20 |S21e|2 15 10 5 0 1 10 100 Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 VCE = 1 V f = 2 GHz MSG MAG 20 15 |S21e|2 10 5 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Collector Current IC (mA) 30 25 VCE = 1 V f = 3 GHz 20 MSG MAG 15 |S21e|2 10 5 0 1 10 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT 30 25 VCE = 1 V f = 5 GHz 20 15 MSG MAG 10 2 |S21e| 5 0 1 10 100 Collector Current IC (mA) Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT 30 VCE = 2 V MSG f = 0.5 GHz 25 |S21e|2 20 15 10 5 0 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0048EJ0300 Rev.3.00 Sep 18, 2012 Page 6 of 13 NESG3032M14 25 VCE = 2 V f = 1 GHz MSG |S21e|2 20 15 10 5 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 VCE = 2 V f = 2 GHz MSG MAG 20 |S21e|2 15 10 5 0 1 10 100 Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 25 VCE = 2 V f = 3 GHz MSG 20 MAG 15 |S21e|2 10 5 0 30 25 1 10 25 VCE = 2 V f = 5 GHz 20 15 MSG MAG 10 |S21e|2 5 0 1 10 100 Collector Current IC (mA) INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT MSG |S21e| 2 15 10 5 0 30 Collector Current IC (mA) VCE = 3 V f = 0.5 GHz 20 100 Insertion Power Gain |S21e| (dB) Maximum Stable Power Gain MSG (dB) 30 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Collector Current IC (mA) 2 Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT 1 10 100 Collector Current IC (mA) 30 25 VCE = 3 V f = 1 GHz MSG 20 |S21e|2 15 10 5 0 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0048EJ0300 Rev.3.00 Sep 18, 2012 Page 7 of 13 NESG3032M14 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 VCE = 3 V f = 2 GHz MSG MAG 20 2 |S21e| 15 10 5 0 1 10 100 Collector Current IC (mA) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 VCE = 3 V f = 3 GHz MSG 20 MAG 15 |S21e|2 10 5 0 1 10 100 Collector Current IC (mA) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 VCE = 3 V f = 5 GHz 20 MSG 15 MAG 10 |S21e|2 5 0 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0048EJ0300 Rev.3.00 Sep 18, 2012 Page 8 of 13 NESG3032M14 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 20 50 40 15 Pout 30 10 5 20 IC 10 0 -5 -20 -15 -10 -5 Collector Current IC (mA) Output Power Pout (dBm) VCE = 3 V, f = 2 GHz Icq = 20 mA (RF OFF) 0 5 0 Input Power Pin (dBm) Measuring method : Measured at power matched with external sleeve tuner. (The load resistance is not inserted between the base DC power supply and Bias Tee.) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 25 Ga 4 20 3 15 2 10 1 5 NF 0 1 Associated Gain Ga (dB) Noise Figure NF (dB) 5 VCE = 2 V f = 2 GHz 10 0 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. <R> S-PARAMETERS S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [Products] [RF Devices] [Device Parameters] URL http://www.renesas.com/products/microwave/ R09DS0048EJ0300 Rev.3.00 Sep 18, 2012 Page 9 of 13 NESG3032M14 <R> EVALUATION CIRCUIT EXAMPLE (f = 1.575 GHz LNA) GND VCC IN R3 C3 C4 R1 C1 R2 L2 C2 L1 Tr. (NESG3032M14) NESG3032M14 GPS_LNA Notes 1. 15 x 24 mm, t = 0.2 mm double sided copper clad glass epoxy PWB. 2. Au plated on pattern 3. : Through holes R09DS0048EJ0300 Rev.3.00 Sep 18, 2012 Page 10 of 13 NESG3032M14 <R> EVALUATION CIRCUIT (f = 1.575 GHz LNA) VCC 3V C3 R1 C1 10 000 pF R3 62 R2 8.2 L2 3.9 nH C4 10 000 pF C2 82 k OUT L1 6 pF IN 10 000 pF 5.6 nH Microstrip W = 0.15 mm L = 0.5 mm x2 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. <R> COMPONENT LIST Symbol Parts Part Number C1, C3, C4 Chip Capacitor GRM155B31H103KA88 Murata 10 000 pF C2 Chip Capacitor GRM1552C1H6R0DZ01 Murata 6 pF L1 Chip Inductor AML1005H5N6STS FDK 5.6 nH L2 Chip Inductor AML1005H3N9STS FDK 3.9 nH R1 Chip Resistor MCR01MZPJ823 ROHM 82 k R2 Chip Resistor MCR01MZPJ8R2 ROHM 8.2 R3 Chip Resistor MCR01MZPJ620 ROHM 62 R09DS0048EJ0300 Rev.3.00 Sep 18, 2012 Maker Value Page 11 of 13 NESG3032M14 EXAMPLE OF CHARACTERISTICS FOR f = 1.575 GHz LNA EVALUATION BOARD ELECTRICAL CHARACTERISTICS (TA = +25C, VCC = 3 V, IC = 5.9 mA, f = 1.575 GHz) Parameter Symbol Value Unit Noise Figure NF 0.72 dB Gain Ga 17.2 dB Input Return Loss RLin 10.2 dB Output Return Loss RLout 16.0 dB PO (1 dB) -0.9 dBm IIP3 0.5 dBm Gain 1 dB Compression Output Power Input 3rd Order Distortion Intercept Point OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 20 5 15 0 -5 10 -10 5 -15 -30 -25 -20 -15 -10 0 Input Power Pin (dBm) Colletor Current IC (mA) VCC = 3 V, f = 1.575GHz, Icq = 5.9 mA (RF OFF) Output Power POUT (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) Output Power Pout (dBm) <R> OUTPUT POWER, IM3 vs. INPUT POWER 40 VCC = 3 V, IC = 5.9 mA f1in = 1.575 GHz, 20 f2in = 1.576 GHz 0 POUT -20 -40 IM3 -60 IIP3 = 0.5 dBm -80 -30 -20 -10 0 10 Input Power Pin (dBm) Remark The graph indicates nominal characteristics. R09DS0048EJ0300 Rev.3.00 Sep 18, 2012 Page 12 of 13 NESG3032M14 PACKAGE DIMENSIONS 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) (UNIT: mm) 1.00.05 0.150.05 2 (Bottom View) 1 4 0.8 zN 3 0.8+0.07 -0.05 1.2+0.07 -0.05 0.2 0.11+0.1 -0.05 0.2 0.50.05 <R> PIN CONNECTIONS 1. 2. 3. 4. Collector Emitter Base NC (Connected with Pin 2) Note Note A NC pin is Non-connection in the mold package (When NC-pin is open state, it will get an influences of floating capacitance. Therefore, we recommend that NC pin connect to Emitter pin). R09DS0048EJ0300 Rev.3.00 Sep 18, 2012 Page 13 of 13 Revision History NESG3032M14 Data Sheet Description Rev. Date Page Summary 1.00 Jul 19, 2005 - First edition issued 2.00 Sep 11, 2007 - Second edition issued 3.00 Sep 18, 2012 Throughout The company name is changed to Renesas Electronics Corporation. p.1 Modification of FEATURES p.1 Modification of ORDERING INFORMATION p.2 Modification of ELECTRICAL CHARACTERISTICS p.2 Modification of hFE CLASSIFICATION p.9 Modification of method for obtaining S-parameters p.10 Addition of EVALUTION CIRCUIT EXAMPLE p.11 Addition of EVALUTION CIRCUIT p.11 Addition of COMPONENT LIST p.12 Addition of EXAMPLE OF CHARACTERISTICS FOR f = 1.575 GHz LNA EVALUATION BOARD p.13 Modification of PACKAGE DIMENSIONS All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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