AlGaAs Infrared Emitting Diode
SE1470
DESCRIPTION
FEATURES
Compact metal can coaxial package
•
24¡ (nominal) beam angle
•
880 nm wavelength
•
Higher output power than GaAs at equivalent
drive currents
•
Wide operating temperature range
(-55¡C to +125¡C)
•
Mechanically and spectrally matched to SD1420
photodiode, SD1440 phototransistor and
SD1410 photodarlington
•
The SE1470 is a high intensity aluminum gallium
arsenide infrared emitting diode mounted in a glass
lensed metal can coaxial package. The package may
have a tab or second lead welded to the can as an
optional feature (SE1470-XXXL). Both leads are flexible
and may be formed as required to fit various mounting
configurations. These devices typically exhibit 70%
greater power intensity than gallium arsenide devices at
the same forward current.
INFRA-63.TIF
OUTLINE DIMENSIONS
in inches (mm)
Tolerance
.106(2.69)
DIA
.076(1.93)
ANODE
MIN
.095(2.41) DIA
.020(0.51) DIA
.091(2.26)
.079(2.01)
.062(1.57) DIA
1.000(25.40)
.122(3.10)
.010(0.25)
CATHODE (CASE)
DIM_001a.ds4
SE1470-XXX
.106(2.69)
DIA
.076(1.93)
ANODE
CATHODE
TYPICAL MIN
.095(2.41) DIA
.020
(0.51) DIA
.091(2.26)
.079(2.01)
.062(1.57) DIA
1.000(25.40)
.122(3.10)
.010(0.25)
.020
(0.51) DIA
~
~
~
~
~
~
DIM_001b.ds4
SE1470-XXXL
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
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AlGaAs Infrared Emitting Diode
SE1470
ELECTRICAL CHARACTERISTICS
UNITS
TEST CONDITIONS
MIN
PARAMETER
SYMBOL
TYP
MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
50 mA
Power Dissipation
75 mW [À]
Operating Temperature Range
-55¡C to 125¡C
Storage Temperature Range
-65¡C to 150¡C
Soldering Temperature (10 sec)
260¡C
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
0.71 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
13
AlGaAs Infrared Emitting Diode
SE1470
Radiant Intensity vs
Angular Displacement
gra_007.ds4
Angular displacement - degrees
Relative intensity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Fig. 1 Radiant Intensity vs
Forward Current
gra_008.ds4
Forward current - mA
Normalized radiant intensity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0 4.0 8.0 16.0
12.0 20.0
Fig. 2
Forward Voltage vs
Forward Current
gra_201.ds4
Forward current - mA
Forward voltage - V
1.0
1.1
1.2
1.3
1.4
1.5
1.6
0 10 20 30 40 50
Fig. 3 Forward Voltage vs
Temperature
gra_202.ds4
Temperature - °C
Forward voltage - V
1.0
1.1
1.2
1.3
1.4
1.5
1.6
-50 -25 0 25 50 75 100 125
IF = 20 mA
Fig. 4
Spectral Bandwidth
gra_011.ds4
Wavelength - nm
Relative intensity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
760 800 840 880 920 960 1000
Fig. 5 Coupling Characteristics
with SD1440
gra_012.ds4
Lens-to-lens seperation - inches
Normalized light current
0.0
0.2
0.4
0.6
0.8
1.0
0.0 0.2 0.4 0.8
0.6 1.4
1.2 1.0
Fig. 6
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
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AlGaAs Infrared Emitting Diode
SE1470
Relative Power Output vs
Free Air Temperature
gra_130.ds4
T
A - Free-air temperature - (°C)
Relative power output
0.1
1.0
10
-50 -25 0+25 +50 +75 +100
0.2
0.5
2.0
5.0
IF = 30 mA
IF = 20 mA
IF = 10 mA
IF = 40 mA
Fig. 7
All Performance Curves Show Typical Values
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
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