4GBU Series
2
Bulletin I2717 rev. G 05/02
www.irf.com
IOMaximum DC output current 4 A TC = 100°C, Resistive & inductive load
3.2 TC = 100°C, Capacitive load
IFSM Maximum peak, one-cycle 150 t = 10ms
non-repetitive surge current,
following any rated load condition 158 t = 8.3ms TJ = 150°C
and with rated VRRM reapplied
I2t Maximum I2t for fusing, 113 A2s t = 10ms
initial TJ = TJ max 104 t = 8.3ms
VFM Maximum peak forward voltage 1.0 V TJ = 25 oC, IFM = 4A
per diode
IRM Typical peak reverse leakage 5 µA TJ = 25 oC, 100% VRRM
curren t per diode
VRRM Maximum repetitive peak 50 to 800 V
reverse voltage range
Forward Conduction
Voltage VRRM , max repetitive VRMS , max RMS IRRM max. IRRM max.
Type number Code peak rev. voltage voltage @ rated VRRM @ rated VRRM
TJ = TJ max. TJ = TJ max. TJ = 25°C TJ = 150°C
V V µA µA
4GBU 005 50 35 5 400
4GBU...F 01 100 70 5 400
02 200 140 5 400
04 400 280 5 400
06 600 420 5 400
08 800 560 5 400
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Parameters 4GBU Unit Conditions
TJOperating and storage -55 to 150 oC
Tstg temperature range
RthJC Max. thermal resistance 4.2 °C/ W DC rated current through bridge (1)
junction to case
RthJA Thermal resistance, 22 °C/ W DC rated current through bridge (1)
junction to ambient
W Approximate weight 4 (0.14) g (oz)
T Mounting Torque 1.0 Nm Bridge to Heatsink
9.0 Lb.in
Thermal and Mechanical Specifications
Parameters 4GBU Unit Conditions
Note (1): Devices mounted on 40x 40x1.5mm aluminum plate; use silicon thermal compound for maximum
heat transfer and bolt down using 3mm screw