Linear Regulator - Low VIN, Low Noise, High PSRR 200 mA NCP110 The NCP110 is a linear regulator capable of supplying 200 mA output current from 1.1 V input voltage. The device provides wide output range from 0.6 V up to 4.0 V, very low noise and high PSRR. Due to low quiescent current the NCP110 is suitable for battery powered devices such as smartphones and tablets. The device is designed to work with a 1 mF input and a 1 mF output ceramic capacitor. It is available in ultra-small 0.35P, 0.64 mm x 0.64 mm Chip Scale Package (CSP) and XDFN4 0.65P, 1 mm x 1 mm. www.onsemi.com MARKING DIAGRAMS Features * * * * * * * * * * * XM WLCSP4 CASE 567VS Operating Input Voltage Range: 1.1 V to 5.5 V Available in Fixed Voltage Option: 0.6 V to 4.0 V 2% Accuracy Over Load/Temperature Ultra Low Quiescent Current Typ. 20 mA Standby Current: Typ. 0.1 mA Very Low Dropout: 70 mV for 1.05 V @ 100 mA High PSRR: Typ. 95 dB at 20 mA, f = 1 kHz Ultra Low Noise: 8.8 mVRMS Stable with a 1 mF Small Case Size Ceramic Capacitors Available in -WLCSP4 0.64mm x 0.64mm x 0.33mm - Case 567VS -XDFN4 1mm x 1mm x 0.4mm - Case 711AJ These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 XDFN4 CASE 711AJ XX M 1 X or XX = Specific Device Code M = Date Code PIN CONNECTIONS IN OUT A1 A2 B1 B2 EN GND Typical Applications * * * * * * * Battery-powered Equipment Smartphone, Tablets Digital Cameras Smoke Detectors Portable Medical Equipment RF, PLL, VCO and Clock Power Supplies Battery Powered Wireless IoT Modules (Top View) VOUT VIN IN NCP110 CIN 1 mF Ceramic EN COUT 1 mF Ceramic ON OFF (Top View) OUT GND ORDERING INFORMATION See detailed ordering, marking and shipping information on page 14 of this data sheet. Figure 1. Typical Application Schematics (c) Semiconductor Components Industries, LLC, 2017 July, 2020 - Rev. 6 1 Publication Order Number: NCP110/D NCP110 IN EN ENABLE THERMAL LOGIC SHUTDOWN BANDGAP MOSFET REFERENCE INTEGRATED DRIVER WITH SOFT-START CURRENT LIMIT OUT * Active Discharge Only EN GND Figure 2. Simplified Schematic Block Diagram PIN FUNCTION DESCRIPTION Pin No. CSP4 Pin No. XDFN4 Pin Name A1 4 IN A2 1 OUT B1 3 EN B2 2 GND Common ground connection - EPAD EPAD Expose pad can be tied to ground plane for better power dissipation Description Input voltage supply pin Regulated output voltage. The output should be bypassed with small 1 mF ceramic capacitor. Chip enable: Applying VEN < 0.2 V disables the regulator, Pulling VEN > 0.7 V enables the LDO. ABSOLUTE MAXIMUM RATINGS Rating Symbol Input Voltage (Note 1) Value Unit VIN -0.3 V to 6 V Output Voltage VOUT -0.3 to VIN + 0.3, max. 6 V V Chip Enable Input VCE -0.3 to 6 V V Output Short Circuit Duration tSC unlimited s Maximum Junction Temperature TJ 150 C TSTG -55 to 150 C ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per EIA/JESD22-A114 ESD Machine Model tested per EIA/JESD22-A115 Latchup Current Maximum Rating tested per JEDEC standard: JESD78. THERMAL CHARACTERISTICS Rating Symbol Thermal Characteristics, CSP4 (Note 3) Thermal Resistance, Junction-to-Air Value Unit 108 RqJA Thermal Characteristics, XDFN4 (Note 3) Thermal Resistance, Junction-to-Air C/W 208 3. Measured according to JEDEC board specification. Detailed description of the board can be found in JESD51-7 www.onsemi.com 2 NCP110 ELECTRICAL CHARACTERISTICS -40C TJ 125C; VIN = VOUT(NOM) + 0.3 V or 1.1 V, whichever is greater; IOUT = 1 mA, CIN = COUT = 1 mF, unless otherwise noted. VEN = 1.0 V. Typical values are at TJ = +25C (Note 4). Parameter Test Conditions Operating Input Voltage Output Voltage Accuracy VIN = VOUT(NOM) + 0.3 V (VIN 1.1 V) VOUT(NOM) 1.5 V Symbol Min VIN VOUT VOUT(NOM) > 1.5 V Typ Max Unit 1.1 5.5 V -30 +30 mV -2 +2 % Line Regulation VOUT(NOM) + 0.5 V VIN 5.5 V, (VIN 1.1 V) LineReg 0.02 %/V Load Regulation IOUT = 1 mA to 200 mA LoadReg 0.001 %/mA VDO 40 70 IOUT = 100 mA 70 130 IOUT = 110 mA 60 140 IOUT = 200 mA 110 190 VOUT(NOM) = 1.80 V IOUT = 200 mA 65 120 VOUT(NOM) = 2.80 V IOUT = 200 mA 45 100 Dropout Voltage (Note 5) VOUT(NOM) = 1.05 V VOUT(NOM) = 1.20 V IOUT = 50 mA Output Current Limit VOUT = 90% VOUT(NOM) ICL Short Circuit Current VOUT = 0 V ISC 300 Quiescent Current IOUT = 0 mA IQ 20 25 mA Shutdown Current VEN 0.2 V, VIN = 1.1 V IDIS 0.01 1.0 mA EN Input Voltage "H" VENH EN Input Voltage "L" VENL VEN = 1.1 V IEN 0.2 Turn-On Time COUT = 1 mF, From assertion of VEN to VOUT = 95% VOUT(NOM) tON 120 ms Power Supply Rejection Ratio IOUT = 20 mA, VIN = VOUT + 0.3 V PSRR 90 95 85 55 dB f = 10 Hz to 100 kHz VN 8.8 mVRMS Thermal Shutdown Threshold Temperature rising TSDH 160 C Temperature falling TSDL 140 C Active Output Discharge Resistance VEN < 0.2 V, Version A only RDIS 280 W EN Pin Threshold Voltage EN Pull Down Current Output Voltage Noise f = 100 Hz f = 1 kHz f = 10 kHz f = 100 kHz 225 300 mV mA 0.7 0.2 0.5 V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25C. Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible. 5. Dropout voltage is characterized when VOUT falls 0.02 x VOUT(NOM) below VOUT(NOM). 6. Guaranteed by design. www.onsemi.com 3 NCP110 TYPICAL CHARACTERISTICS 1.205 VOUT, OUTPUT VOLTAGE (V) VOUT, OUTPUT VOLTAGE (V) 1.06 1.055 1.05 IOUT = 1 mA 1.045 IOUT = 200 mA 1.04 1.035 1.03 -40 -20 0 20 40 60 80 100 TJ, TEMPERATURE (C) 120 1.2 IOUT = 1 mA 1.195 IOUT = 200 mA 1.19 1.185 1.8 -40 140 Figure 3. Output Voltage vs. Temperature - VOUT,nom = 1.05 V - CSP4 LOADREG, LOAD REGULATION (mV) VOUT, OUTPUT VOLTAGE (V) 1.805 1.8 IOUT = 1 mA IOUT = 200 mA 1.79 1.785 1.78 -40 -20 0 20 40 60 80 100 TJ, TEMPERATURE (C) 120 120 140 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 VIN = VOUT,NOM + 0.3 V IOUT = 1 mA to 200 mA 0.1 0 -40 140 -20 0 20 40 60 80 100 TJ, TEMPERATURE (C) 120 140 Figure 6. Load Regulation vs. Temperature 1000 0.3 IGND, GROUND CURRENT (mA) LINEREG, LINE REGULATION (mV/V) 20 40 60 80 100 TJ, TEMPERATURE (C) 1 Figure 5. Output Voltage vs. Temperature - VOUT,nom = 1.8 V - CSP4 0.25 0.2 0.15 0.1 0.05 0 -40 0 Figure 4. Output Voltage vs. Temperature - VOUT,nom = 1.2 V - CSP4 1.81 1.795 -20 -20 0 20 40 60 80 100 TJ, TEMPERATURE (C) 120 140 Figure 7. Line Regulation vs. Temperature TJ = 125C TJ =-40C TJ = 25C 100 10 1u 10u 100u 1m 10m IOUT, OUTPUT CURRENT (A) 100m Figure 8. Ground Current vs. Output Current - VOUT,nom = 1.2 V www.onsemi.com 4 1 NCP110 TYPICAL CHARACTERISTICS 200 VDROP, DROPOUT VOLTAGE (mV) VDROP, DROPOUT VOLTAGE (mV) 160 140 120 TJ = 125C 100 TJ = 25C 80 60 TJ =-40C 40 20 0 0 180 140 120 100 IOUT = 100 mA 80 60 40 IOUT = 10 mA 20 0 -40 40 60 80 100 120 140 160 180 200 IOUT, OUTPUT CURRENT (mA) 20 IOUT = 200 mA 160 Figure 9. Dropout Voltage vs. Output Current - VOUT,nom = 1.2 V - CSP4 Package 140 120 100 140 VDROP, DROPOUT VOLTAGE (mV) VDROP, DROPOUT VOLTAGE (mV) 20 60 40 80 100 TJ, TEMPERATURE (C) 0 Figure 10. Dropout Voltage vs. Temperature - VOUT,nom = 1.05 V - CSP4 Package 160 IOUT = 200 mA 120 100 80 IOUT = 100 mA 60 40 IOUT = 10 mA 20 0 -40 -20 0 20 40 60 80 TJ, TEMPERATURE (C) 100 120 80 IOUT = 200 mA 60 IOUT = 100 mA 40 IOUT = 10 mA 20 0 -40 140 Figure 11. Dropout Voltage vs. Temperature - VOUT,nom = 1.2 V - CSP4 Package 0 20 40 60 80 100 TJ, TEMPERATURE (C) 120 140 380 370 ISC 360 ICL 350 VIN = 1.5 V VOUT,NOM = 1.2 V CIN = COUT = 1 mF 340 330 320 ICL: VOUT = 90% VOUT,NOM ISC: VOUT = 0 V (SHORT) 310 -20 0 20 40 60 80 100 TJ, TEMPERATURE (C) 120 VEN,TH,ON, VEN,TH,OFF, ENABLE THRESHOLD VOLTAGE (mV) 600 390 300 -40 -20 Figure 12. Dropout Voltage vs. Temperature - VOUT,nom = 1.8 V - CSP4 Package 400 ICL, CURRENT LIMIT, ISC, SHORT CIRCUIT CURRENT (mA) -20 140 OFF -> ON 500 ON -> OFF 400 300 200 100 0 -40 Figure 13. Short-circuit Current vs. Temperature -20 0 20 40 60 80 100 TJ, TEMPERATURE (C) 120 140 Figure 14. Enable thresholds voltage vs. Temperature www.onsemi.com 5 NCP110 160 IDIS, DISABLE CURRENT (nA) IEN, ENABLE PIN CURRENT (mA) 0.3 0.25 0.2 0.15 0.1 0.05 0 -40 VEN = 1 V -20 0 20 40 60 80 100 TJ, TEMPERATURE (C) 120 140 120 100 80 60 40 20 0 -40 140 Figure 15. Enable Pin Current vs. Temperature -20 0 20 40 60 80 100 TJ, TEMPERATURE (C) 120 140 Figure 16. Disable Current vs. Temperature 300 100 290 280 270 260 250 240 230 220 VIN = 1.5 V VOUT,nom = 1.2 V 210 200 -40 -20 0 20 40 60 80 TJ, TEMPERATURE (C) 100 120 ESR, EQUIVALENT SERIES RESISTANCE (W) RDIS, DISCHARGE RESISTIVITY (W) VEN = 0 V 1 Stable Region 0.1 0.01 140 Unstable Region 10 VOUT,nom = 1.2 V COUT = 1 mF 0 Figure 17. Discharge Resistivity vs. Temperature 20 40 60 80 100 120 140 160 180 200 IOUT, OUTPUT CURRENT (mA) Figure 18. Maximum COUT ESR Value vs. Output Current www.onsemi.com 6 NCP110 SPECTRAL NOISE DENSITY (mV/Hz) 10 VIN = 1.5 V VOUT,nom = 1.2 V CIN = COUT = 1 mF 1 0.1 0.01 0.001 IOUT (mA) 10 Hz - 100 kHz 100 Hz - 100 kHz 2 10.01 8.79 RMS Output Noise (mV) 20 8.78 7.39 200 8.77 7.44 IOUT (mA) 10 Hz - 100 kHz 100 Hz - 100 kHz IOUT = 2 mA IOUT = 20 mA IOUT = 200 mA 10 100 1k 10k 100k 1M f, FREQUENCY (Hz) Figure 19. Output Voltage Spectral Noise Density vs. Frequency SPECTRAL NOISE DENSITY (mV/Hz) 10 VIN = 1.35 V VOUT,nom = 1.05 V CIN = COUT = 1 mF 1 0.1 0.01 0.001 10 RMS Output Noise (mV) 2 10.01 8.79 20 8.78 7.39 200 8.77 7.44 IOUT (mA) 10 Hz - 100 kHz 100 Hz - 100 kHz 2 9.88 8.71 20 9.01 7.73 200 9.08 7.70 IOUT = 2 mA IOUT = 20 mA IOUT = 200 mA 100 1k 10k 100k 1M f, FREQUENCY (Hz) Figure 20. Output Voltage Spectral Noise Density vs. Frequency SPECTRAL NOISE DENSITY (mV/Hz) 10 VIN = 2.1 V VOUT,nom = 1.8 V CIN = COUT = 1 mF 1 0.1 0.01 0.001 10 IOUT = 2 mA IOUT = 20 mA IOUT = 200 mA 100 1k 10k 100k 1M f, FREQUENCY (Hz) Figure 21. Output Voltage Spectral Noise Density vs. Frequency www.onsemi.com 7 RMS Output Noise (mV) NCP110 120 120 100 PSRR, POWER SUPPLY REJECTION RATIO (dB) VIN = 1.35 V + 100 mVpp VOUT,nom = 1.05 V COUT = 1 mF 60 40 IOUT = 2 mA IOUT = 20 mA IOUT = 200 mA 20 0 10 100 1k 10k 100k 1M VIN = 1.5 V + 100 mVpp VOUT,nom = 1.2 V COUT = 1 mF 100 80 10M 80 60 40 IOUT = 2 mA IOUT = 20 mA IOUT = 200 mA 20 0 10 100 1k 10k 100k 1M f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 22. PSRR vs. Frequency Figure 23. PSRR vs. Frequency 120 PSRR, POWER SUPPLY REJECTION RATIO (dB) PSRR, POWER SUPPLY REJECTION RATIO (dB) TYPICAL CHARACTERISTICS VIN = 2.1 V + 100 mVpp VOUT,nom = 1.8 V COUT = 1 mF 100 80 60 40 IOUT = 2 mA IOUT = 20 mA IOUT = 200 mA 20 0 10 100 1k 10k 100k 1M f, FREQUENCY (Hz) Figure 24. PSRR vs. Frequency www.onsemi.com 8 10M 10M NCP110 1 V/div 100 mA/div VEN IIN VIN = 1.5 V VOUT,nom = 1.2 V IOUT = 10 mA CIN = COUT = 1 mF VOUT 400 mV/div 400 mV/div 100 mA/div 1 V/div TYPICAL CHARACTERISTICS 20 ms/div VEN IIN VOUT 20 ms/div Figure 26. Enable Turn-on Response, COUT = 4.7 mF, IOUT = 10 mA VIN = 1.5 V VOUT,nom = 1.2 V IOUT = 200 mA CIN = COUT = 1 mF 20 ms/div 1 V/div IIN VEN 100 mA/div VEN IIN 400 mV/div 400 mV/div 100 mA/div 1 V/div Figure 25. Enable Turn-on Response, COUT = 1 mF, IOUT = 10 mA VOUT VOUT tFALL = 1 ms 2.5 V 1.5 V 500 mV/div tRISE = 1 ms 10 mV/div 500 mV/div 10 mV/div 20 ms/div tFALL = 1 ms 1.5 V VIN VIN = 1.5 V VOUT,nom = 1.2 V IOUT = 200 mA CIN = 1 mF COUT = 4.7 mF Figure 28. Enable Turn-on Response, COUT = 4.7 mF, IOUT = 200 mA Figure 27. Enable Turn-on Response, COUT = 1 mF, IOUT = 200 mA 2.5 V VIN = 1.5 V VOUT,nom = 1.2 V IOUT = 10 mA CIN = 1 mF COUT = 4.7 mF VOUT VOUT,nom = 1.2 V IOUT = 10 mA COUT = 1 mF VIN tRISE = 1 ms VOUT VOUT,nom = 1.2 V IOUT = 200 mA COUT = 1 mF 4 ms/div 4 ms/div Figure 29. Line Transient Response, IOUT = 10 mA Figure 30. Line Transient Response, IOUT = 200 mA www.onsemi.com 9 NCP110 TYPICAL CHARACTERISTICS 20 mV/div 20 mV/div COUT = 4.7 mF VOUT VOUT COUT = 1 mF COUT = 4.7 mF VIN = 1.5 V VOUT,nom = 1.2 V COUT = 1 mF 200 mA 1 mA tRISE = 1 ms 100 mA/div 100 mA/div 200 mA IOUT VIN = 1.5 V VOUT,nom = 1.2 V IOUT 1 mA 1 ms/div 10 ms/div Figure 32. Load Transient Response, IOUT = 1 mA to 200 mA tRISE = 500 ns tRISE = 500 ns 20 mV/div 20 mV/div Figure 31. Load Transient Response, IOUT = 1 mA to 200 mA VOUT tRISE = 1 ms VOUT tRISE = 1 ms 100 mA/div 1 mA VIN = 1.5 V VOUT,nom = 1.2 V COUT = 1 mF 200 mA VIN = 1.5 V VOUT,nom = 1.2 V COUT = 1 mF IOUT 1 mA 1 ms/div 4 ms/div Figure 33. Load Transient Response, IOUT = 1 mA to 200 mA Figure 34. Load Transient Response, IOUT = 1 mA to 200 mA VIN = 0 V to 1.5 V VOUT,nom = 1.2 V IOUT = 10 mA CIN = COUT = 1 mF VOUT 1.5 V IOUT VIN = 5.5 V VOUT,nom = 1.2 V IOUT = 200 mA CIN = 1 mF COUT = 1 mF VIN VOUT 400 mV/div 50 mA/div 400 mV/div 100 mA/div 200 mA IOUT tFALL = 1 ms 0V 100 ms/div 2 ms/div Figure 35. Overheating Protection - TSD Figure 36. Turn On/Off, Slow Rising VIN www.onsemi.com 10 NCP110 1 V/div TYPICAL CHARACTERISTICS VIN = 1.5 V VOUT,nom = 1.2 V IOUT = 200 mA CIN = COUT = 1 mF 400 mV/div VEN VOUT COUT = 10 mF COUT = 4.7 mF COUT = 1 mF 40 ms/div Figure 37. Enable Turn-off Response, Various Output Capacitors www.onsemi.com 11 NCP110 APPLICATIONS INFORMATION General output capacitors and lower ESR could improve the load transient response or high frequency PSRR. It is not recommended to use tantalum capacitors on the output due to their large ESR. The equivalent series resistance of tantalum capacitors is also strongly dependent on the temperature, increasing at low temperature. The NCP110 is an ultra-low input voltage, ultra-low noise 200 mA low dropout regulator designed to meet the requirements of low voltage RF applications and high performance analog circuits. The NCP110 device provides very high PSRR and excellent dynamic response. In connection with low quiescent current this device is well suitable for battery powered application such as cell phones, tablets and other. The NCP110 is fully protected in case of current overload, output short circuit and overheating. Enable Operation The NCP110 uses the EN pin to enable/disable its device and to deactivate/activate the active discharge function. If the EN pin voltage is <0.2 V the device is guaranteed to be disabled. The pass transistor is turned-off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage VOUT is pulled to GND through a 280 W resistor. In the disable state the device consumes as low as typ. 10 nA from the VIN. If the EN pin voltage >0.7 V the device is guaranteed to be enabled. The NCP110 regulates the output voltage and the active discharge transistor is turned-off. The EN pin has internal pull-down current source with typ. value of 200 nA which assures that the device is turned-off when the EN pin is not connected. In the case where the EN function isn't required the EN should be tied directly to IN. Input Capacitor Selection (CIN) Input capacitor connected as close as possible is necessary for ensure device stability. The X7R or X5R capacitor should be used for reliable performance over temperature range. The value of the input capacitor should be 1 mF or greater to ensure the best dynamic performance. This capacitor will provide a low impedance path for unwanted AC signals or noise modulated onto constant input voltage. There is no requirement for the ESR of the input capacitor but it is recommended to use ceramic capacitors for their low ESR and ESL. A good input capacitor will limit the influence of input trace inductance and source resistance during sudden load current changes. Output Current Limit Output decoupling Output Current is internally limited within the IC to a typical 350 mA. The NCP110 will source this amount of current measured with a voltage drops on the 90% of the nominal VOUT. If the Output Voltage is directly shorted to ground (VOUT = 0 V), the short circuit protection will limit the output current to 360 mA (typ). The current limit and short circuit protection will work properly over whole temperature range and also input voltage range. There is no limitation for the short circuit duration. The NCP110 requires an output capacitor connected as close as possible to the output pin of the regulator. The recommended capacitor value is 1mF and X7R or X5R dielectric due to its low capacitance variations over the specified temperature range. The NCP110 is designed to remain stable with minimum effective capacitance of 0.6mF to account for changes with temperature, DC bias and package size. Especially for small package size capacitors such as 0201 the effective capacitance drops rapidly with the applied DC bias. Please refer to Figure 38. Thermal Shutdown When the die temperature exceeds the Thermal Shutdown threshold (TSD - 160C typical), Thermal Shutdown event is detected and the device is disabled. The IC will remain in this state until the die temperature decreases below the Thermal Shutdown Reset threshold (TSDU - 140C typical). Once the IC temperature falls below the 140C the LDO is enabled again. The thermal shutdown feature provides the protection from a catastrophic device failure due to accidental overheating. This protection is not intended to be used as a substitute for proper heat sinking. Power Dissipation As power dissipated in the NCP110 increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature Figure 38. Capacity vs DC Bias Voltage There is no requirement for the minimum value of Equivalent Series Resistance (ESR) for the COUT but the maximum value of ESR should be less than 1.6 W. Larger www.onsemi.com 12 NCP110 rise for the part. The maximum power dissipation the NCP110 can handle is given by: 125oC * T A P D [ V IN @ I GND ) I OUTV IN * V OUT (eq. 1) q JA 140 1.60 PD(MAX), TA = 25C, 2 oz Cu 1.40 130 PD(MAX), TA = 25C, 1 oz Cu 120 1.20 qJA, 1 oz Cu 110 1.00 0.80 100 qJA, 2 oz Cu 90 0.60 PD(MAX), MAXIMUM POWER DISSIPATION (W) qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (C/W) P D(MAX) + The power dissipated by the NCP110 for given application conditions can be calculated from the following equations: 0.40 80 0 100 200 300 400 PCB COPPER AREA (mm2) 500 600 700 230 0.7 qJA, 1 oz Cu PD(MAX), TA = 25C, 2 oz Cu 220 210 0.65 0.6 PD(MAX), TA = 25C, 1 oz Cu 0.55 200 qJA, 2 oz Cu 190 0.5 180 0.45 0.4 170 0 100 200 300 400 500 600 PCB COPPER AREA (mm2) Figure 40. qJA and PD (MAX) vs. Copper Area (XDFN4) www.onsemi.com 13 700 PD(MAX), MAXIMUM POWER DISSIPATION (W) qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (C/W) Figure 39. qJA and PD (MAX) vs. Copper Area (CSP4) (eq. 2) NCP110 ORDERING INFORMATION Nominal Output Voltage Marking Rotation NCP110AFCT060T2G 0.60 V C 0 NCP110AFCT080T2G 0.80 V J 0 NCP110AFCT085T2G 0.85 V 2 0 NCP110AFCT100T2G 1.00 V T 0 NCP110AFCT105T2G 1.05 V A 0 NCP110AFCT110T2G 1.10 V G 0 NCP110AFCT120T2G 1.20 V F 0 NCP110AFCT180T2G 1.80 V D 0 NCP110AFCT280T2G 2.80 V E 0 Device Description Package Shipping 200 mA, Active Discharge WLCSP4 CASE 567VS (Pb-Free) 5000 / Tape & Reel ORDERING INFORMATION Device Nominal Output Voltage Marking NCP110AMX060TBG 0.60 V FC NCP110AMX075TBG 0.75 V F3 NCP110AMX080TBG 0.80 V FJ NCP110AMX085TBG 0.85 V F2 NCP110AMX100TBG 1.00 V FG NCP110AMX105TBG 1.05 V FA NCP110AMX110TBG 1.10 V FH NCP110AMX120TBG 1.20 V FF NCP110AMX180TBG 1.80 V FD NCP110AMX280TBG 2.80 V FE Description Package Shipping 200 mA, Active Discharge XDFN4 CASE 711AJ (Pb-Free) 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 14 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WLCSP4, 0.64x0.64x0.33 CASE 567VS ISSUE O SCALE 4:1 E E A E PIN A1 REFERENCE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO SPHERICAL CROWNS OF SOLDER BALLS. B D DIM A A1 A2 b D E e TOP VIEW A2 0.05 C A 0.05 C NOTE 3 A1 C SIDE VIEW DATE 25 JAN 2018 MILLIMETERS MIN NOM MAX --- --- 0.33 0.04 0.06 0.08 0.23 REF 0.180 0.200 0.220 0.610 0.640 0.670 0.610 0.640 0.670 0.35 BSC GENERIC MARKING DIAGRAM* SEATING PLANE XM 4X e b 0.03 C A B e X M B A 1 *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. Some products may not follow the Generic Marking. 2 BOTTOM VIEW RECOMMENDED SOLDERING FOOTPRINT* A1 = Specific Device Code = Month PACKAGE OUTLINE 4X 0.35 PITCH 0.20 0.35 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON82946G WLCSP4, 0.64X0.64X0.33 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. (c) Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS XDFN4 1.0x1.0, 0.65P CASE 711AJ ISSUE A 1 SCALE 4:1 PIN ONE REFERENCE 2X 0.05 C 4X A B D EE EE E 4X DETAIL A 0.05 C 2X TOP VIEW (A3) 0.05 C A 0.05 C NOTE 4 A1 SIDE VIEW e DETAIL A 4X 2 SEATING PLANE 1 XX = Specific Device Code M = Date Code 3 4X b 0.05 M *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. C A B NOTE 3 BOTTOM VIEW RECOMMENDED MOUNTING FOOTPRINT* 2X 0.65 PITCH 0.52 PACKAGE OUTLINE 4X MILLIMETERS MIN MAX 0.33 0.43 0.00 0.05 0.10 REF 0.15 0.25 0.02 0.12 1.00 BSC 0.43 0.53 1.00 BSC 0.65 BSC 0.20 0.30 0.07 0.17 L D2 4 DIM A A1 A3 b b2 D D2 E e L L2 XX M D2 45 5 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20 mm FROM THE TERMINAL TIPS. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. GENERIC MARKING DIAGRAM* e/2 1 b2 L2 DATE 13 NOV 2015 4X 0.39 0.11 4X 1.20 4X 0.24 0.26 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON67179E XDFN4, 1.0X1.0, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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