Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2 Page 1 of 11 March, 2005
IXYS Date: 17.03.2005
Data Sheet Issue: 2
Thyristor/Diode Modules M## 500
Absolute Maximum Ratings
VRRM
VDRM
[V]
MCC MCD MDC MCA MCK MCDA MDCA
1200 500-12io1 500-12io1 500-12io1 500-12io1 500-12io1 500-12io1 500-12io1
1400 500-14io1 500-14io1 500-14io1 500-14io1 500-14io1 500-14io1 500-14io1
1600 500-16io1 500-16io1 500-16io1 500-16io1 500-16io1 500-16io1 500-16io1
1800 500-18io1 500-18io1 500-18io1 500-18io1 500-18io1 500-18io1 500-18io1
VOLTAGE RATINGS MAXIMUM
LIMITS UNITS
VDRM Repetitive peak off-state voltage 1) 1200-1800 V
VDSM Non-repetitive peak off-state voltage 1) 1200-1800 V
VRRM Repetitive peak reverse voltage 1) 1200-1800 V
VRSM Non-repetitive peak reverse voltage 1) 1300-1900 V
OTHER RATINGS MAXIMUM
LIMITS UNITS
IT(AV)M Maximum average on-state current, TC = 89°C 2) 500 A
IT(AV)M Maximum average on-state current. TC = 85°C 2) 545 A
IT(AV)M Maximum average on-state current. TC = 100°C 2) 376 A
IT(RMS)M Nominal RMS on-state current, TC = 55°C 2) 1294 A
IT(d.c.) D.C. on-state current, TC = 55°C 1029 A
ITSM Peak non-repetitive surge tp = 10 ms, VRM = 60%VRRM 3) 16.5 kA
ITSM2 Peak non-repetitive surge tp = 10 ms, VRM ≤ 10V 3) 18.2 kA
I2tI
2t capacity for fusing tp = 10 ms, VRM = 60%VRRM 3) 1.36×106A2s
I2tI2t capacity for fusing tp = 10 ms, VRM ≤ 10 V 3) 1.66×106A2s
Critical rate of rise of on-state current (repetitive) 4) 150 A/µs
(di/dt)cr Critical rate of rise of on-state current (non-repetitive) 4) 300 A/µs
VRGM Peak reverse gate voltage 5 V
PG(AV) Mean forward gate power 4 W
PGM Peak forward gate power 30 W
VISOL Isolation Voltage 5) 3500 V
TVj op Operating temperature range -40 to +125 °C
Tstg Storage temperature range -40 to +150 °C
Notes:
1) De-rating factor of 0.13% per °C is applicable for Tvj below 25°C.
2) Single phase; 50 Hz, 180° half-sinewave.
3) Half-sinewave, 125°C Tvj initial.
4) VD = 67% VDRM, IFG = 2 A, tr ≤ 0.5µs, TC = 125°C.
5) AC RMS voltage, 50 Hz, 1min test
IXYS Thyristor/Diode Module Types M##500-12io1 and M##500-18io1
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2 Page 2 of 11 March, 2005
Thyristor Characteristics
PARAMETER MIN. TYP. MAX. TEST CONDITIONS 1) UNITS
VTM Maximum peak on-state voltage - - 1.5 ITM = 1700 A V
VTM Maximum peak on-state voltage - - 1.43 ITM = 1500 A V
VT0 Threshold voltage - - 0.85 V
rTSlope resistance - - 0.27 mΩ
(dv/dt)c
r
Critical rate of rise of off-state voltage 1000 - - VD = 80% VDRM, linear ramp, Gate o/c V/µs
IDRM Peak off-state current - - 70 Rated VDRM mA
IRRM Peak reverse current - - 70 Rated VRRM mA
VGT Gate trigger voltage - - 3.0 V
IGT Gate trigger current - - 300 Tvj = 25°C, VD = 10 V, IT = 3 A mA
IHHolding current - - 1000 Tvj = 25°C mA
tgd Gate controlled turn-on delay time - 0.6 1.5
tgt Turn-on time - 1.2 2.5
IFG = 2 A, tr = 0.5 µs, VD = 67%VDRM,
ITM = 2000 A, di/dt = 10 A/µs, Tvj = 25°C µs
Qrr Recovered Charge - 2200 - µC
Qra Recovered Charge, 50% chord - 1600 1900 µC
Irm Reverse recovery current - 120 - A
trr Reverse recovery time, 50% chord - 25 -
ITM = 1000 A, tp = 1 ms, di/dt = 10A/µs,
VR = 50 V
µs
- 200 - ITM = 1000 A, tp = 1 ms, di/dt = 10 A/µs,
VR = 50 V, VDR = 80%VDRM, dvD
R
/dt = 20 V/µs
tqTurn-off time
- 300 - ITM = 1000 A, tp = 1 ms, di/dt = 10 A/µs,
VR = 50 V, VDR = 80%VDRM, dvD
R
/dt = 200 V/µs
µs
--0.062 Single Thyristor K/W
RthJC Thermal resistance, junction to case --
0.031 Whole Module K/W
--0.02 Single Thyristor K/W
RthCH Thermal resistance, case to heatsink --
0.01 Whole Module K/W
F1Mounting force (to heatsink) 4.25 - 5.75 Nm
F2Mounting force (to terminals) 10.2 - 13.8 2) Nm
WtWeight - 1.5 - kg
Diode Characteristics
PARAMETER MIN. TYP. MAX. TEST CONDITIONS 1) UNITS
VFM Maximum peak forward voltage - - 0.98 ITM = 1800 A V
VT0 Threshold voltage - - 0.72 V
rTSlope resistance - - 0.143 mΩ
IRRM Peak reverse current - - 50 Rated VRRM mA
Qrr Recovered Charge - 2200 - µC
Qra Recovered Charge, 50% chord - 1800 2250 µC
IRM Reverse recovery current - 145 - A
trr Reverse recovery time, 50% chord - 25 -
ITM = 1000 A, tp = 1ms, di/dt = 10 A/µs,
VR = 50 V
µs
Notes:
1) Unless otherwise indicated Tvj=125°C.
2) Screws must be lubricated
IXYS Thyristor/Diode Module Types M##500-12io1 and M##500-18io1
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2 Page 3 of 11 March, 2005
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade VDRM VDSM VRRM
V
VRSM
V
VD VR
DC V
12 1200 1300 820
14 1400 1500 930
16 1600 1700 1040
18 1800 1900 1150
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tvj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
IG
tp1
4A/µs
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
IXYS Thyristor/Diode Module Types M##500-12io1 and M##500-18io1
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2 Page 4 of 11 March, 2005
8.0 Computer Modelling Parameters
8.1 Thyristor Dissipation Calculations
T
AVTTT
AV rff
WrffVV
I⋅⋅
⋅⋅⋅++−
=2
2
2
00
2
4
and:
Kj
th
AV
TTT
R
T
W
−=∆
∆
=
max
Where VT0 = 0.85 V, rT = 0.27 mΩ for the thyristor and VT0 = 0.72 V, rT = 0.143 mΩ for the diode.
Rth = Supplementary thermal impedance, see table below and
ff = Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave 0.07067 0.06791 0.06629 0.06525 0.06395 0.06277 0.062
Sine wave 0.06767 0.06536 0.06408 0.0633 0.062
Form Factors
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave 3.464 2.449 2 1.732 1.414 1.149 1
Sine wave 3.98 2.778 2.22 1.879 1.57
8.2 Calculating thyristor VT using ABCD Coefficients
The on-state characteristic IT vs. VT, on page 6 is represented in two ways;
(i) the well established VT0 and rT tangent used for rating purposes and
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in terms of
IT given below:
()
TTTT IDICIBAV ⋅+⋅+⋅+= ln
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The
resulting values for VT agree with the true device characteristic over a current range, which is limited to
that plotted.
25°C Coefficients 125°C Coefficients
A0.7860338 A-0.099137717
B9.929062×10-3 B0.1987038
C1.94704×10-4 C4.23812×10-4
D7.409213×10-3 D-0.01453705
IXYS Thyristor/Diode Module Types M##500-12io1 and M##500-18io1
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2 Page 5 of 11 March, 2005
8.3 D.C. Thermal Impedance Calculation
∑
=
=
−
−⋅=
np
p
t
pt
p
err
1
1
τ
Where p = 1 to n
n= number of terms in the series and
t = Duration of heating pulse in seconds.
rt= Thermal resistance at time t.
rp= Amplitude of pth term.
τp= Time Constant of rth term).
The coefficients for this device are shown in the tables below:
D.C.
Term 1234
rp0.05428 4.4894×10-3 2.3382×10-3 8.759×10-4
τ
p2.69428 0.126017 0.013878 1.435×10-3
9.0 Reverse recovery ratings
(i) Qra is based on 50% IRM chord as shown in Fig. 1
Fig. 1
(ii) Qrr is based on a 150 µs integration time i.e.
∫
=
s
rrrr dtiQ
µ
150
0
.
(iii)
2
1
t
t
FactorK =
IXYS Thyristor/Diode Module Types M##500-12io1 and M##500-18io1
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2 Page 6 of 11 March, 2005
Thyristor Curves
Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5
Instantaneous On-state voltage - VTM (V)
Instantaneous On-state current - I
TM
(A)
Tj = 125°CTj = 25°C
0.00001
0.0001
0.001
0.01
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Time (s)
Thermal impedance (K/W)
Single Thyristor
Figure 3 - Gate characteristics - Trigger limits Figure 4 - Gate characteristics - Power curves
0
1
2
3
4
5
6
7
8
0 0.2 0.4 0.6 0.8 1
Gate Trigger Current - IGT (A)
Gate Trigger Voltage - V
GT
(V)
IGD, VGD
IGT, VGT
Min VG dc
Max VG dc
Tj=25°C
125°C
25°C
-10°C
-40°C
0
5
10
15
20
25
30
35
0246810
Gate Trigger Current - IGT (A)
Gate Trigger Voltage - V
GT
(V)
PG 4W dc
PG Max 30W dc
Min VG dc
Max VG dc
Tj=25°C
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IXYS Thyristor/Diode Module Types M##500-12io1 and M##500-18io1
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2 Page 7 of 11 March, 2005
Figure 5 - Total recovered charge, Qrr Figure 6 - Recovered charge, Qra (50% chord)
1000
10000
1 10 100 1000
di/dt (A/µs)
Recovered charge - Q
rr
(µC)
Tj=125°C
1500A
2000A
1000A
500A
1000
10000
1 10 100 1000
di/dt (A/µs)
Recovered charge - Q
ra
, 50% chord (µC)
500A
Tj=125°C
1000A
2000A
1500A
Figure 7 - Peak reverse recovery current, Irm Figure 8 - Maximum recovery time, trr (50% chord)
100.00
1000.00
1 10 100 1000
di/dt (A/µs)
Reverse recovery current - I
rm
(A)
2000A
1500A
1000A
500A
Tj=125°C
1
10
100
1 10 100 1000
di/dt (A/µs)
Reverse recovery time (50% chord) - t
rr
(µs)
2000A
1500A
1000A
500A
Tj=125°C
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IXYS Thyristor/Diode Module Types M##500-12io1 and M##500-18io1
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2 Page 8 of 11 March, 2005
Figure 9 - On-state current vs. Power dissipation
- Sine wave
Figure 10 - On-state current vs. Heatsink
temperature - Sine wave
0
200
400
600
800
1000
1200
1400
1600
1800
0 200 400 600 800 1000
Mean forward current (A) (Whole cycle averaged)
Maximum forward dissipation (W)
30°
60° 90° 120°
180°
0
20
40
60
80
100
120
140
0 200 400 600 800 1000
Mean forward current (A) (Whole cycle averaged)
Maximum permissable heatsink temperature (°C)
30° 60° 90° 120° 180°
Figure 11 - On-state current vs. Power dissipation
- Square wave
Figure 12 - On-state current vs. Heatsink
temperature - Square wave
0
200
400
600
800
1000
1200
1400
1600
1800
0 200 400 600 800 1000 1200 1400
Mean Forward Current (Amps) (Whole Cycle Averaged)
Maximum forward dissipation (W)
d.c.
270°
180°
120°
90°
60°
30°
0
20
40
60
80
100
120
140
0 200 400 600 800 1000 1200 1400
Mean Forward Current (Amps) (Whole Cycle Averaged)
Maximum permissible heatsink temperature (°C)
30° 60° 90° 120° 180° d.c.270°
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IXYS Thyristor/Diode Module Types M##500-12io1 and M##500-18io1
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2 Page 9 of 11 March, 2005
Figure 13 - Maximum surge and I2t Ratings
1000
10000
100000
Total peak half sine surge current (A)
1.00E+05
1.00E+06
1.00E+07
Maximum I
2
t (A
2
s)
135101510 50100
Duration of surge (ms) Duration of surge (cycles @ 50Hz)
I2t: 60% VRRM
ITSM: 60% VRRM
I2t: VRRM ≤10V
ITSM: VRRM ≤10V
Tj (initial) = 125°C
Gate may temporarily lose control of conduction angle
Diode curves
Figure 14 - Instantaneous forward voltage VFFigure 15 - Transient thermal impedance
100
1000
10000
00.511.52
Maximum instantaneous forward voltage - VFM (V)
Instantaneous forward current - I
FM
(A)
125°C25°C
0.000001
0.00001
0.0001
0.001
0.01
0.1
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Time (s)
Thermal impedance (K/W)
Single Diode
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IXYS Thyristor/Diode Module Types M##500-12io1 and M##500-18io1
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2 Page 10 of 11 March, 2005
Figure 16 - Total recovered charge, Qrr Figure 17 - Recovered charge, Qra (50% chord)
1000
10000
1 10 100 1000
di/dt (A/µs)
Recovered charge - Q
rr
(µC)
Tj=125°C
1500A
2000A
1000A
500A
1000
10000
1 10 100 1000
di/dt (A/µs)
Recovered charge - Q
ra
, 50% chord (µC)
Tj=125°C
2000A
1500A
1000A
500A
Figure 18 - Peak reverse recovery current, Irm Figure 19 - Maximum recovery time, trr (50% chord)
100.00
1000.00
10000.00
1 10 100 1000
di/dt (A/µs)
Reverse recovery current - I
rm
(A)
2000A
1500A
1000A
500A
Tj=125°C
1
10
100
1 10 100 1000
di/dt (A/µs)
Reverse recovery time (50% chord) - t
rr
(µs)
2000A
1500A
1000A
500A
Tj=125°C
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IXYS Thyristor/Diode Module Types M##500-12io1 and M##500-18io1
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2 Page 11 of 11 March, 2005
Outline Drawing & Ordering Information
ORDERING INFORMATION (Please quote 11 digit code as below)
M ## 500
io 1
Fixed
Type Code
Configuration code
CC, CD, DC, CA, CK,
CDA, DCA
Average Current
Rating
Voltage code
VRRM/100
12-18
i = Critical dv/dt 1000 V/µs
o = Typical turn-off time
Fixed
Version Code
Order code: MCD500-14io1– MCD configuration, 1400V VRRM
IXYS
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Tel: +44 (0)1249 444524
Fax: +44 (0)1249 659448
E-mail: WSL.sales@westcode,com
WESTCODE
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IXYS Corporation
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Santa Clara CA 95054 USA
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
E-mail: sales@ixys.net
www.westcode.com
Westcode Semiconductors Inc
3270 Cherry Avenue
Long Beach CA 90807 USA
Tel: +1 (562) 595 6971
Fax: +1 (562) 595 8182
E-mail: WSI.sales@westcode.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors IXYS Semiconductors GmbH.
In the interest of product improvement, IXYS reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.
© IXYS Semiconductor GmbH.
3671 542
MCC
31542
MCD
3671 2
MDC
37 6 1 5 4 2
MCA
3 6 7 1 4 5 2
MCK
31542
MCDA
3 7 6 1 2
MDCA
