Aug.1998
●ITQRM
Repetitive controllable on-state current
...........6000A
●IT(AV) Average on-state current.....................1500A
●QRR Repetitive peak off state voltage .........6000V
●Anode short type
300 ± 8
0.4 min0.4 min
φ 130 ± 0.2
φ 130 ± 0.2
φ 190 max
φ 190 max
35 ± 0.5
CATHODE
TYPE NAME
ANODE
GATE (WHITE)
AUXILIARY CATHODE
CONNECTOR (RED)
φ 3.6 ± 0.2 DEPTH 2.2 ± 0.2
φ 3.6 ± 0.2 DEPTH 2.2 ± 0.2
V
V
V
V
V
V
120D
22
22
22
6000
6000
4800
A
A
A
kA
A2s
A/µs
V
V
A
A
W
kW
W
W
°C
°C
kN
g
ITQRM
IT(RMS)
IT(AV)
ITSM
I2t
diT/dt
VFGM
VRGM
IFGM
IRGM
PFGM
PRGM
PFG(AV)
PRG(AV)
Tj
Tstg—
—
+
: VGK = –2V
FG6000AU-120D
VRRM
VRSM
VR(DC)
VDRM
VDSM
VD(DC)
6000
3100
2000
40
6.7 × 106
500
10
22
200
2400
2000
50
140
630
–40 ~ +125
–40 ~ +150
98 ~ 118
4600
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING Dimension in mm
MITSUBISHI GATE TURN-OFF THYRISTORS
FG6000AU-120D
HIGH POWER INVERTER USE
PRESS PACK TYPE
UnitRatings
MAXIMUM RATINGS
Voltage class
Symbol
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
+
Non-repetitive peak of f-state voltage
+
DC off-state voltage
+
Parameter Unit
Symbol Parameter Conditions
Repetitive controllable on-state current
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
Current-squared, time integration
Critical rate of rise of on-state current
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate reverse current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required
Weight
V
D
= 3000V, V
DM
= 5500V, T
j
= 125°C, C
S
= 6.0µF, L
S
= 0.2µH
f = 60Hz, sine wave θ = 180°, Tf = 72°C
One half cycle at 60Hz
One cycle at 60Hz
VD = 3000V, IGM = 90A, Tj = 125°C
Recommended value 108
Standard value
Aug.1998
0
10
20
30
40
50
100101
23 57 10
2
23 57
0
0.001
0.002
0.003
0.008
0.005
0.006
0.007
10–3 210
–2
357 2 10
–1
357 2 10
0
357
100210
1
357
0.004
10–1
7
5
3
2
100
7
5
3
2
101
7
5
3
2
102
7
5
3
2
103
23 5723 57
10
1
23 57
10
0
10
–1
10
2
23 57
10
3
VFGM = 10V
VGT = 1.5V
IFGM = 200A
Tj = 25°C
PFGM = 2000W
PFG(AV) = 140W
IGT = 8.4A
102
103
2
3
5
7
104
2
3
5
7
0246810
Tj = 125°C
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
MAXIMUM ON-STATE CHARACTERISTIC
SURGE ON-STATE CURRENT (kA)
CONDUCTION TIME
(CYCLES AT 60Hz)
RATED SURGE ON-STATE CURRENT
THERMAL IMPEDANCE (°C/W)
TIME (s)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE CHARACTERISTICS
MITSUBISHI GATE TURN-OFF THYRISTORS
FG6000AU-120D
HIGH POWER INVERTER USE
PRESS PACK TYPE
6.0
100
320
100
—10
—
1.5
8.4
0.0044
V
mA
mA
mA
V/µs
µs
A
V
A
°C/W
Tj = 125°C, ITM = 6000A, Instantaneous measurment
Tj = 125°C, VRRM Applied
Tj = 125°C, VDRM Applied, VGK = –2V
Tj = 125°C, VRG = 22V
Tj = 125°C, VD = 3000V,
V
DM
= 5500V,
VGK = –2V
Tj = 125°C, ITM = 6000A, IGM = 90A, VD = 3000V
Junction to fin
VTM
IRRM
IDRM
IRG
dv/dt
tgt
IGQM
VGT
IGT
Rth(j-f)
tgq
T
j
= 125°C, I
TM
= 6000A, V
DM
= 5500V, d
iGQ
/d
t
= –80A/µs
VRG = 20V, CS = 6.0µF, LS = 0.2µH——30µs
—
—
—
—
—
—
1800
—
—
—
—
—
—
—
1000
—
—
—
—
—
DC METHOD :VD = 24V, RL = 0.1Ω, Tj = 25°C
PERFORMANCE CURVES
On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Critical rate of rise of off-state voltage
Turn-on time
Peak gate turn-off current
Gate trigger voltage
Gate trigger current
Thermal resistance
ELECTRICAL CHARACTERISTICS
Symbol Parameter Test conditions Limits
Min Typ Unit
Max
Turn-off time
Aug.1998
0
5
10
15
20
25
–40 0 40 80 120 160
VD = 24V
RL = 0.1Ω
IGT
VGT
0
4
6
2
8
0 40 80 120 160 200
tgt
td
IT = 6000A
VD = 3000V
diT/dt = 500A/µs
diG/dt = 30A/µs
CS = 6.0µF
RS = 5.0Ω
Tj = 125°C
0
2000
4000
6000
8000
10000
12000
14000
16000
0 400 800 1200 1600 2000 0 400 800 1200 1600 2000
90° 120° 180°
θ = 30° 60°
θ
360°
0
20
40
60
80
100
120
140
160
θ
360°
0
2000
4000
6000
8000
10000
12000
14000
16000
0 4000500 1000 1500 2000 2500 3000 3500
DC
270°
θ = 30°
120°180°
60°90°
360°
θ
0
20
40
60
80
100
120
140
160
0 4000500 1000 1500 2000 2500 3000 3500
θ = 30° 90°
60° 120°
180° 270°
DC
360°
θ
θ = 30° 60° 90° 120° 180°
ON-STATE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(SINGLE-PHASE HALF WAVE)
FIN TEMPERATURE (°C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
FIN TEMPERATURE (°C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
GATE TRIGGER CURRENT (A), GATE TRIGGER VOLTAGE (V)
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT, GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
(TYPICAL)
TURN ON TIME tgt, TURN ON DELAY TIME td (µs)
TURN ON GATE CURRENT (A)
TURN ON TIME, TURN ON DELAY TIME
VS. TURN ON GATE CURRENT
(TYPICAL)
ON-STATE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(RECTANGULAR WAVE)
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
DC METHOD
MITSUBISHI GATE TURN-OFF THYRISTORS
FG6000AU-120D
HIGH POWER INVERTER USE
PRESS PACK TYPE
Aug.1998
MITSUBISHI GATE TURN-OFF THYRISTORS
FG6000AU-120D
HIGH POWER INVERTER USE
PRESS PACK TYPE
10
20
30
40
50
0 2000 4000 6000 8000
t
s
t
gq
V
D
= 3000V
V
DM
= 5500V
d
iGQ
/d
t
= –80A/µs
V
GR
= 17V
C
S
= 6.0µF
L
S
= 0.2µH
T
j
= 125°C
10
20
30
40
50
0 20 40 60 80 100 120 140 160
t
gq
t
s
V
D
= 3000V
V
DM
= 5500V
I
T
= 6000A
V
RG
= 17V
C
S
= 6.0µF
L
S
= 0.2µH
T
j
= 125°C
500
1000
1500
2000
2500
0 2000 4000 6000 8000
V
D
= 3000V
V
DM
= 5500V
d
iGQ
/d
t
= –80A/µs
V
RG
= 17V
C
S
= 6.0µF
L
S
= 0.2µH
T
j
= 125°C
500
1000
1500
2000
2500
0 20 40 60 80 100 120 140 160
V
D
= 3000V
V
DM
= 5500V
I
T
= 6000A
V
RG
= 17V
C
S
= 6.0µF
L
S
= 0.2µH
T
j
= 125°C
0.5
1.0
1.5
2.0
2.5
0 2000 4000 6000 8000
V
D
= 3000V
I
GM
= 90A
d
iT
/d
t
= 300A/µs
d
iG
/d
t
= 30A/µs
C
S
= 6.0µF
R
S
= 5.0Ω
T
j
= 125°C
0
5
10
15
20
0 2000 4000 6000 8000
V
D
= 3000V
V
DM
= 5500V
d
iGQ
/d
f
= –80A/µs
V
RG
= 17V
C
S
= 6.0µF
L
S
= 0.2µH
T
j
= 125°C
RATE OF RISE OF TURN OFF GATE CURRENT (A/µs)
TURN OFF GATE CURRENT (A)
RATE OF RISE OF TURN OFF GATE CURRENT (A/µs)
TURN OFF GATE CURRENT VS.
RATE OF RISE OF GATE CURRENT
(TYPICAL)
SWITCHING ENERGY Eon (J/P)
TURN ON CURRENT (A)
TURN ON SWITCHING ENERGY
(TYPICAL)
TURN OFF GATE CURRENT (A)
TURN OFF CURRENT (A)
TURN OFF GATE CURRENT
VS. TURN OFF CURRENT
(TYPICAL)
SWITCHING ENERGY Eoff (J/P)
TURN OFF CURRENT (A)
TURN OFF SWITCHING ENERGY
(TYPICAL)
TURN OFF TIME t
gq
C
TURN OFF STORAGE TIME t
s
(µs)
TURN OFF CURRENT (A)
TURN OFF TIME, TURN OFF STORAGE TIME
VS. TURN OFF CURRENT
(TYPICAL)
TURN OFF TIME t
gq
, TURN OFF STORAGE TIME t
s
(µs)
TURN OFF TIME, TURN OFF STORAGE TIME
VS. RATE OF RISE OF TURN OFF GATE CURRENT
(TYPICAL)