DISCRETE SEMICONDUCTORS DATA SEE PBYR2100CT series Schottky barrier double diodes Product specification 1996 Oct 14 Supersedes data of 1996 May 03 File under Discrete Semiconductors, SCO1 Philips Semiconductors PHILIPSPhilips Semiconductors Product specification Schottky barrier double diodes PBYR2100CT series FEATURES + Low swilching losses High breakdown vollage Fast recovery time Guard ring protected Plastic SMD package. APPLICATIONS Low power, switched-mode pawer supplies Rectification Polarity protection. DESCRIPTION The PBYR2100CT series consists of Schotiky barrier double diades, fabricated in planar technology, and encapsulated in SOT223 plastic SMD packages. 1996 Oct 14 PINNING MARKING PIN DESCRIPTION TYPE NUMBER MARKING 1 anode (ay) CODE 2 common cathode PBYR280CT BYR28 3 anode (az) PBYR290CT BYR29 4 common cathode PBYR2100CT | BYR210 LU L Top view Fig.1 Simplified outline (SOT223), pin configuration and symbol. MAMO&EPhilips Semiconductors Product specification schottky barrier double diodes PBYR2100CT series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode Vr continuous reverse voltage PBYR280CT - 80 Vv PBYR290CT - 90 V PBYR2100CT - 100 Vv Vern repetitive peak reverse voltage PBYR280CT - 80 Vv PBYR290CT - 90 V PBYR2100CT - 100 Vv VRwM crest working reverse valitage PBYR280CT - 80 V PBYR290CT - 90 Vv PBYR2100CT - 100 Vv lFeayy average forward current Tamb = 85C; see Fig.2; - 1 A Rihj-a = 70 KAN; note 1; Vavequiv) = 0.2 V; note 2 lrsm non-repetitive peak forward current | t= 8.3 ms half sine wave; | - 10 A JEDEC method IRsm non-repetitive peak reverse current | fp = 100 ps - 0.5 A Tstg storage temperature -65 +150 C Tj junction temperature -65 +150 C Tamb operating ambient temperature - 85 C Notes 1. Refer io SOT223 standard mounting conditions. 2. Far Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse pawer losses Pp are a significant part of the total power lasses. Nomagrams far determination of the reverse power losses Pr and lray rating will be available on request. 1996 Oct 14 3Philips Semiconductors Product specification schottky barrier double diodes PBYR2100CT series ELECTRICAL CHARACTERISTICS Tamb = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per diode Ve forward voltage see Fig.3 I-= 1 A; note 1 - - 790 mV le= 1A; 7)= 100C; note 1 - - 690 mv lp reverse current Ve = Varnmmax; Note 1; see Fig.4 |- - 0.5 mA Va = VaRMmax: Tj = 100C; - - 5 mA note 1; see Fig.4 Ca diode capacitance Va =4V; f= 1 MHz; see Fig.6 - - 100 pF Note 1. Pulsed test: tp = 300 ps; 6 = 0.02. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth ja thermal resistance fram junction to ambient note 1 70 K/W Note 1. Refer to SOT223 standard mounting conditions. 1996 Oct 14 4Philips Semiconductors Product specification schottky barrier double diodes PBYR2100CT series GRAPHICAL DATA 12 MSAgo7 | FAV) (A) \ 0.8 04 \ \ 0 \ 0 40 80 120 160 Tj (C) Fig.2 Average forward current derating curve. MSAgO5 10 (A) 1071 10-2 103 0 0.4 0.8 1.2 1.6 Ve) (1), Tamb = 25C. (2) Tamb = 85C. (3) Tamb = 100C. (4) Tam = 125C. (5) Tam = 150C. Fig.8 Forward current as a function of forward voltage; typical values. MsAgge to"! 0 20 40 60 30 100 VR VY} (1) Tamb = 25C. (2) Tamb = 85C. (3) Tamp = 100C. (4) Tamb = 125C. (5) Tamb = 150C. Fig.4 Reverse current as a function of reverse voltage; typical values. MSAG96 103 Cd (pF) 102 10 0 50 Va (Vv) 100 f=1MHz. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 1996 Oct 14Philips Semiconductors Product specification schottky barrier double diodes PBYR2100CT series PACKAGE OUTLINE 0.32 0.24 * ee i= 3. =20/A] 1 4 : | | 0.10 0.01 | 3.7 73 | 33 67 | eh de || , r | 1 |} 2 | 3 | 10 . ae a+! 90. | | eprarE | | (4x) MSA0RS- 7 Dimensions in mm. Fig.6 SOT223. 1996 Oct 14 6Philips Semiconductors Product specification schottky barrier double diodes PBYR2100CT series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for praduct development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134}. Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, itis advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Oct 14 7