NOTES : 1.Measured at 1.0MHz and applied reverse volt age of 4.0V DC.
2.Thermal Resistance Junction to Lead.
V
RMS
V
DC
V
RRM
I
(AV)
@T
L
=
70 C
1N5391S thru 1N5399S
PLASTIC SILICON RECTIFIERS
FEATURES
Low cost
Diffused junction
Low forward voltage drop
Low reverse leakage current
High current capability
The plastic material carries UL recognition 94V-0
MECHANICAL DATA
Case : JEDEC DO-41 molded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
MAXIM UM RATINGS AND ELECT RICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
1N
5393S
200
140
200
1N
5391S
50
35
50
1N
5397S
600
420
600
1N
5392S
100
70
100
1N
5396 S
500
350
500
1N
5395S
400
280
400
1N
5394S
300
210
300
Maximum Average Forward Rectified Current
.375",(9.5mm) Lead Lengths
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
1.5
T
J
Operating Temperature Range
-55 to +125 C
T
STG
Storage Tem perature Range
-55 to +150 C
Typical Thermal Resistance (Note 2)
R
0JL
26
C/W
C
J
Typical Junction
Capacitance (Note 1)
20
pF
I
R
@T
J
=100 C
Maximum DC Rev erse Cu rrent
at Rated DC Blocking Voltage
@T
J
=25 C 5
50
uA
V
F
Maximum forw ard Voltage at 1.5A DC
1.1
V
I
FSM
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC Method)
50
A
A
V
UNIT
V
V
All Dimensions in millimeter
Max.
Min.
DO-41
Dim.
A
D
C
B 25.4 5.20
-
4.10
0.71
2.00 2.70
0.86
DO-41
A
C
D
A
B
CHARACTERISTICS SYMBOL
1N
5398S
800
560
800
1N
5399S
1000
700
1000
1000
700
1000
REVERSE VOLTAGE
- 50
to
100 0
Volts
FORWARD CURRENT
- 1.5
Amperes
SEMICONDUCTOR
LITE-ON
REV. 2, 01-Dec-2000, KDAC02