DATA SH EET
Product specification
Supersedes data of 1996 May 30 1996 Sep 18
DISCRETE SEMICONDUCTORS
BYM36 series
Fast soft-recovery
controlled avalanche rectifiers
handbook, 2 columns
M3D118
1996 Sep 18 2
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYM36 series
FEATURES
•Glass passivated
•High maximum operating
temperature
•Low leakage current
•Excellent stability
•Guaranteed avalanche energy
absorption capability
•Available in ammo-pack
•Also available with preformed leads
for easy insertion.
DESCRIPTION
Rugged glass SOD64 package, using
a high temperature alloyed
construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
ka
,
,
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage
BYM36A −200 V
BYM36B −400 V
BYM36C −600 V
BYM36D −800 V
BYM36E −1000 V
BYM36F −1200 V
BYM36G −1400 V
VRcontinuous reverse voltage
BYM36A −200 V
BYM36B −400 V
BYM36C −600 V
BYM36D −800 V
BYM36E −1000 V
BYM36F −1200 V
BYM36G −1400 V
IF(AV) average forward current Ttp =55°C; lead length = 10 mm;
see Figs 2; 3 and 4
averaged over any 20 ms period;
see also Figs 14; 15 and 16
BYM36A to C −3.0 A
BYM36D and E −2.9 A
BYM36F and G −2.9 A
IF(AV) average forward current Tamb =65°C; PCB mounting (see
Fig.25); see Figs 5; 6 and 7
averaged over any 20 ms period;
see also Figs 14; 15 and 16
BYM36A to C −1.25 A
BYM36D and E −1.20 A
BYM36F and G −1.15 A
1996 Sep 18 3
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYM36 series
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
IFRM repetitive peak forward current Ttp =55°C; see Figs 8; 9 and 10
BYM36A to C −37 A
BYM36D and E −33 A
BYM36F and G −27 A
IFRM repetitive peak forward current Tamb =65°C; see Figs 11; 12 and 13
BYM36A to C −13 A
BYM36D and E −11 A
BYM36F and G −10 A
IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj=T
j max
prior to surge; VR=V
RRMmax
−65 A
ERSM non-repetitive peak reverse
avalanche energy L = 120 mH; Tj=T
j max prior to surge;
inductive load switched off −10 mJ
Tstg storage temperature −65 +175 °C
Tjjunction temperature see Figs 17 and 18 −65 +175 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VFforward voltage IF= 3 A; Tj=T
j max;
see Figs 19; 20 and 21
BYM36A to C −−1.22 V
BYM36D and E −−1.28 V
BYM36F and G −−1.24 V
VFforward voltage IF=3A;
see Figs 19; 20 and 21
BYM36A to C −−1.60 V
BYM36D and E −−1.78 V
BYM36F and G −−1.57 V
V(BR)R reverse avalanche breakdown
voltage IR= 0.1 mA
BYM36A 300 −−V
BYM36B 500 −−V
BYM36C 700 −−V
BYM36D 900 −−V
BYM36E 1100 −−V
BYM36F 1300 −−V
BYM36G 1500 −−V
I
Rreverse current VR=V
RRMmax; see Fig.22 −− 5µA
V
R
=V
RRMmax;
Tj= 165 °C; see Fig.22 −−150 µA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
1996 Sep 18 4
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYM36 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.25.
For more information please refer to the
“General Part of associated Handbook”
.
trr reverse recovery time when switched from
IF= 0.5 A to IR=1A;
measured at IR= 0.25 A;
see Fig. 26
BYM36A to C −−100 ns
BYM36D and E −−150 ns
BYM36F and G −−250 ns
Cddiode capacitance f = 1 MHz; VR=0V;
see Figs 23 and 24
BYM36A to C −85 −pF
BYM36D and E −75 −pF
BYM36F and G −65 −pF
maximum slope of reverse recovery
current when switched from
IF= 1 A to VR≥30 V and
dIF/dt = −1A/µs;
see Fig.27
BYM36A to C −− 7A/µs
BYM36D and E −− 6A/µs
BYM36F and G −− 5A/µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 25 K/W
Rth j-a thermal resistance from junction to ambient note 1 75 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dIR
dt
--------
1996 Sep 18 5
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYM36 series
GRAPHICAL DATA
BYM36A to C
a = 1.42; VR=V
RRMmax;δ= 0.5.
Switched mode application.
Fig.2 Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
handbook, halfpage
0 200
0
MSA884
100 T ( C)
o
IF(AV)
(A)
3
1
2
lead length (mm)20 15 10
tp
BYM36D and E
a = 1.42; VR=V
RRMmax;δ= 0.5.
Switched mode application.
Fig.3 Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
handbook, halfpage
0 200
0
MSA885
100
IF(AV)
(A)
3
1
2
lead length (mm)20 15 10
T ( C)
o
tp
BYM36F and G
a = 1.42; VR=V
RRMmax;δ= 0.5.
Switched mode application.
Fig.4 Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
handbook, halfpage
0 200
4.0
0
0.8
3.2
MBD418
100
IF(AV)
(A)
T ( C)
o
tp
1.6
2.4
lead length 10 mm
BYM36A to C
a = 1.42; VR=V
RRMmax;δ= 0.5.
Device mounted as shown in Fig.25.
Switched mode application.
Fig.5 Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
0 200
2.0
0
0.4
1.6
MLB492
100
IF(AV)
(A)
T ( C)
o
amb
0.8
1.2
1996 Sep 18 6
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYM36 series
BYM36D and E
a = 1.42; VR=V
RRMmax;δ= 0.5.
Device mounted as shown in Fig.25.
Switched mode application.
Fig.6 Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
0 200
2.0
0
0.4
1.6
MLB493
100
IF(AV)
(A)
T ( C)
o
amb
0.8
1.2
BYM36F and G
a = 1.42; VR=V
RRMmax;δ= 0.5.
Device mounted as shown in Fig.25.
Switched mode application.
Fig.7 Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
0 200
2.0
0
0.4
1.6
MBD417
100
IF(AV)
(A)
T ( C)
o
amb
0.8
1.2
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
BYM36A to C
Ttp =55°C; Rth j-tp = 25 K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 600 V.
0
20
10 210 111010
2103104
MSA890
40
10
30
t (ms)
p
IFRM
(A) = 0.05δ
0.1
0.2
0.5
1
1996 Sep 18 7
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYM36 series
BYM36D and E
Ttp =55°C; Rth j-tp = 25 K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
0
20
10 210 111010
2103104
MSA889
40
10
30
t (ms)
p
IFRM
(A)
= 0.05
δ
0.1
0.2
0.5
1
BYM36F and G
Ttp =55°C; Rth j-tp = 25 K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 1400 V.
Fig.10 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
30
0
10
10 211010
210 3104
MBD450
20
t (ms)
p
10 1
IFRM
(A)
5
15
25 = 0.05
δ
0.1
0.2
0.5
1
1996 Sep 18 8
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYM36 series
Fig.11 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
BYM36A to C
Tamb =65°C; Rth j-a = 75 K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 600 V.
0
8
10 210 111010
2103104
MSA887
16
4
12
t (ms)
p
IFRM
(A)
= 0.05
δ
0.1
0.2
0.5
1
Fig.12 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
BYM36D and E
Tamb =65°C; Rth j-a = 75 K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 1000 V.
010 210 111010
2103104
MSA888
t (ms)
p
IFRM
(A)
12
4
8
2
6
10
1
= 0.05
δ
0.1
0.2
0.5
1996 Sep 18 9
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYM36 series
Fig.13 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
BYM36F and G
Tamb =65°C; Rth j-a = 75 K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 1400 V.
12
0
4
10 211010
210 3104
MBD445
8
t (ms)
p
10 1
IFRM
(A)
2
6
10 = 0.05
δ
0.1
0.2
0.5
1
Fig.14 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
BYM36A to C
a=I
F(RMS)/IF(AV); VR=V
RRMmax;δ= 0.5.
5
01 3
0
MSA882
2
1
2
3
4
IF(AV)(A)
P
(W) a = 3
2.5 2
1.42
1.57
BYM36D and E
a=I
F(RMS)/IF(AV); VR=V
RRMmax;δ= 0.5.
Fig.15 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
handbook, halfpage
5
01 3
0
MSA883
2
1
2
3
4
IF(AV)(A)
P
(W) a = 3
2.5 2
1.42
1.57
1996 Sep 18 10
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYM36 series
BYM36F and G
a=I
F(RMS)/IF(AV); VR=V
RRMmax;δ= 0.5.
Fig.16 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
handbook, halfpage
5
01 3
0
MLB560
2
1
2
3
4
IF(AV)(A)
P
(W) a = 3
2.5 2
1.42
1.57
Fig.17 Maximum permissible junction temperature
as a function of reverse voltage.
BYM36A to E
Solid line = VR.
Dotted line = VRRM;δ= 0.5.
handbook, halfpage
200
0 400 1200
0
MSA873
800
100
V (V)
R
ABCDE
T
j
(°C)
Fig.18 Maximum permissible junction temperature
as a function of reverse voltage.
BYM36F and G
Solid line = VR.
Dotted line = VRRM;δ= 0.5.
handbook, halfpage
200
0 2000
0
MLB601
1000
100
V (V)
R
Tj
( C)
o
FG
Fig.19 Forward current as a function of forward
voltage; maximum values.
BYM36A to C
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
handbook, halfpage
0
12
IF
8
(A)
4
012
V
F
(V) 3
MSA880
1996 Sep 18 11
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYM36 series
Fig.20 Forward current as a function of forward
voltage; maximum values.
BYM36D and E.
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
h
andbook, halfpage
0
12
8
4
012 4
MSA881
3
IF
(A)
VF (V)
Fig.21 Forward current as a function of forward
voltage; maximum values.
BYM36F and G.
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
h
andbook, halfpage
0
12
8
4
0123
MBD425
IF
(A)
VF (V)
Fig.22 Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
MGC550
0 100 200
103
102
10
1
(µA)
IR
Tj (°C)
VR=V
RRMmax.BYM36A to E
f = 1 MHz; Tj=25°C.
Fig.23 Diode capacitance as a function of reverse
voltage, typical values.
1
MSA886
10 102103
1
102
10
V (V)
R
Cd
(pF) BYM36A,B,C
BYM36D,E
1996 Sep 18 12
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYM36 series
BYM36F and G
f = 1 MHz; Tj=25°C.
Fig.24 Diode capacitance as a function of reverse
voltage, typical values.
1
MBD438
10 102104
1
102
10
V (V)
R
Cd
(pF)
103
Fig.25 Device mounted on a printed-circuit board.
Dimensions in mm.
handbook, halfpage
MGA200
3
2
7
50
25
50
handbook, full pagewidth
10 Ω
1 Ω
50 Ω
25 V
DUT
MAM057
+trr
0.5
0
0.5
1
IF
(A)
IR
(A)
t
0.25
Fig.26 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤< 7 ns.
Source impedance: 50 Ω; tr≤15 ns.
1996 Sep 18 13
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYM36 series
Fig.27 Reverse recovery definitions.
a
ndbook, halfpage
10%
100%
dI
dt
t
trr
IF
IR
MGC499
F
dI
dt
R
1996 Sep 18 14
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYM36 series
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.28 SOD64.
Dimensions in mm.
The marking band indicates the cathode.
handbook, full pagewidth
MBC049
,
,
4.5
max
ka
28 min28 min 5.0 max
1.35
max
