TA8216HQ
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA8216HQ
Dual Audio Power Amplifier
The TA8216HQ is dual audio power amplifier for consumer
applications.
Weight: 4.04 g (typ.)
This IC provides an output power of 13 watts per channel
(at VCC = 28V, f = 1kHz, THD = 10%, RL = 8 Ω).
It is suitable for power amplifier of music center.
Features
• High output power: Pout = 13 W/channel (Typ.)
(VCC = 28 V, RL = 8 Ω, f = 1 kHz, THD = 10%)
• Low noise: Vno = 0.14 mVrms (Typ.)
(VCC = 28 V, RL = 8 Ω, GV = 34dB, Rg = 10 kΩ,
BW = 20 Hz~20 kHz)
• Very few external parts.
• Built in audio muting circuit.
• Built in thermal shut down protector circuit.
• Operation supply voltage range (Ta = 25°C)
: VCC (opr) = 10~37 V (RL = 8 Ω)
: VCC (opr) = 10~24 V (RL = 4 Ω)
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TA8216HQ
Block Diagram
VCC
Application Information
1. Voltage gain
The closed loop voltage gain is determined by R1, R2.
= 34 (dB)
When R3 = 220 Ω
GV∼
−
30 (dB)
is given.
Ω
Ω+Ω
= 400
400k 20
og20l
(dB)
R
RR
og20G
2
21
V
+
=l
(dB)
RR
RRR
og20G
32
321
V+
++
=l
6 9
IN1
Ripple Filter VCC
IN1
IN2
4 OUT1 7
RL
20 kΩ
3
12
10
RL
2 IN2
AMP1
AMP2 OUT2
PW-GNDPre-GND
5
400 Ω
1 20 kΩ400 Ω
8 11
4/2
R1
20 kΩ
R2
400 Ω
5/1
7/12
Output
Input
Figure 1
4/2
R1
20 kΩ
R2
400 Ω
5/1
7/12
Output
R3
Input
Figure 2
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TA8216HQ
2. Muting
(1) Audio muting
This IC is possible to make audio muting operation by using 11 pin muting terminal.
In Fig.3, the equivalent circuit in the muting circuit section is shown.
By means of reducing the voltage of 11 pin down to 2.8 V or less in Fig.3, Q1 is turned ON and the
base voltage of Q2 in the differential circuit fabricated with Q2 and Q3.
Therefore, with the voltage reduction of 11 pin, the input circuits of dummy of input terminal and
that in the doted line operate and cut-off the input signal.
After muting, the bias circuit continues 1st operation and the power supply current of quiescent time.
8 pin, the capacitor terminal for reducing the pop noise can reduce the pop noise through making the
time constant longer by means of inserting the capacitor externary.
In the care this terminal is not used, short 8 pin with 11 pin.
The voltage of 11 pin set up to 4 V or more.
(2) IC internal muting at VCC OFF
When VCC = 8 V or less at VCC off, the detection circuit at VCC off is operated. And the base voltage of
Q1 is reduced and the muting operation is mode.
400 Ω
100 Ω
Q1
Mute IN NF
11
The detection
circuit at
VCC → OFF
1 kΩ
Q3
I1I2
D1
Q6
D2
Q4Q5
8 2/4
Reference
voltage
Q2
I3I4I5
7/12
9
I6
2 0 kΩ
1/5
VCC
OUT
Figure 3
3. Precaution for 4 Ω load resistance use
Internal output current detection and protection circuit protect the IC from the influence of unusual excess
current. And this function causes the interrupted sound in case of excess input voltage with VCC higher
than recommended supply voltage (24V).
Therefore, the power supply regulation must be fully investigated so as not to make the VCC be high than
recommendation supply voltage (24V).
Cautions
This IC is not proof enough against a strong E-M field by CRT which may cause malfunction such as leak.
Please set the IC keeping the distance from CRT.
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TA8216HQ
Standard PCB TA8216H
(Bottom View)
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TA8216HQ
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Supply voltage VCC 40 V
Output current (Peak/ch) IO (peak) 3.0 A
Power dissipation PD (Note) 25 W
Operation temperature Topr −20~75 °C
Storage temperature Tstg −55~150 °C
Note: Derated above Ta = 25°C in the proportion of 200 mW/°C.
Electrical Characteristics
(unless otherwise specified VCC = 28 V, RL = 8 Ω, Rg = 600 Ω, f = 1 kHz, Ta = 25°C)
Characteristics Symbol
Test
Circuit Test Condition Min Typ. Max Unit
Quiescent current ICCQ ⎯ V
in = 0 ⎯ 50 105 mA
Pout (1) ⎯ THD = 10% 10 13 ⎯
Pout (2) ⎯ THD = 1% ⎯ 10 ⎯
Output power
Pout (3) ⎯ THD = 10%, VCC = 24 V,
RL = 4 Ω ⎯ 13 ⎯
W
Total harmonic distortion THD ⎯ Pout = 2 W ⎯ 0.04 0.2 %
Voltage gain GV⎯ V
out = 0.775 Vrms (0dBm) 32.5 34.0 35.5 dB
Input resistance RIN ⎯ ⎯ ⎯ 30 ⎯ kΩ
Ripple rejection ratio R.R. ⎯ Rg = 0, fripple = 100 Hz
Vripple = 0.775 Vrms (0dBm) −40 −50 ⎯ dB
Output noise voltage Vno ⎯ Rg = 10 kΩ,
BW = 20 Hz~20 kHz ⎯ 0.14 0.3 mVrms
Cross talk C.T. ⎯ Rg = 10 kΩ,
Vout = 0.775 Vrms (0dBm) ⎯ −70 ⎯ dB
Muting threshold voltege Vth 11 ⎯ ⎯ 2.6 2.8 ⎯ V
Typ. DC Voltage of Each Terminal (VCC = 28 V, Ta = 25°C)
Terminal No. 1 2 3 4 5 6 7 8 9 10 11 12
DC voltage (V) 1.6 20m GND 20m 1.6 9.4 13.0 5.0 VCC GND 2.8 13.0
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TA8216HQ
Test Circuit
*2
11
*1
8
4
6 9
IN1
Ripple Filter
IN1
VCC
1000 µF
47 µF
7
RL
20 kΩ
3
12
10
2 IN2
AMP1
AMP2
OUT1
OUT2
PW-GNDPre-GND
IN2
5 400 Ω
1 20 kΩ400 Ω
2
2
F
1000 µF
0.12 µ0.12 µF
1000 µF
2.2 Ω 2.2 Ω
47 µF 47 µF
.2 µF
.2 µF
RL
Vth
∼
−
2.8 V
(*1) Mute on at 11 pin low
Vth 11 = 2.8 V (Typ.) VCC = 28 V, Ta = 25ºC
(*2) The capacitor for reducing POP noise at mute ON.
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TA8216HQ
0.1
0.03
0
0.5
1
0.3
20
f = 1 kHz
RL = 8 Ω
1 3 30 100
VCC = 22 V
0.5 5 10 50
0.05
0.1
0.3
3
5
10
28 37
THD – Pout
Total harmonic distortion THD (%)
0.1
0.03
0.5
1
0.3
20
VCC = 28 V
RL = 8 Ω
1 3 30 100
f = 10 kHz
0.5 5 10 50
0.05
0.1
0.3
3
5
10
100 Hz
1 kHz
THD – Pout
Total harmonic distortion THD (%)
Output power POUT (W) Output power POUT (W)
VCC = 28 V
Pout = 1 W
RL = 8 Ω
0.03
0.01
0.5
1
30 300 500 30k 100k50 1k 3k
0.05
0.1
0.3
3
5
100 5k 50k10k
THD – f
GV – f
VCC = 28 V
f = 1 kHz
RL = 8 Ω
10
0
50
60
30 300 500 30k 150k 00k50 1k 3k
20
30
40
70
80
100 5k
10k
Total harmonic distortion THD (%)
Voltage gain GV (dB)
Frequency f (Hz) Frequency f (Hz)
VCC = 28 V
RL = 8 Ω
Rg = 0 Ω
Vripple = 0.775Vrms
(0dBm)
−70
−80
−30
−20
30 300 500 30k 50k100k50 1k 3k
−60
−50
−40
−10
0
100 5k
10k
R.R. – f
VCC = 28 V
RL = 8 Ω
Vripple = 0.775Vrms
(0dBm)
fripple = 100 Hz
−70
−80
−30
−20
30 300 500 30k 150k 00k50 1k 3k
−60
−50
−40
−10
0
100 5k
10k
R.R. – Rg
Ripple rejection ratio R.R. (dB)
Ripple rejection ratio R.R. (dB)
Frequency f (Hz) Singnal source resistance Rg (Ω)
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TA8216HQ
C.T. – f
VCC = 28 V
f = 1 kHz
Vout = 0.775Vrms
(0dBm)
RL = 8 Ω
Rg = 10 kΩ
−70
−80
−30
−20
30 300 500 30k 50k100k50 1k 3k
−60
−50
−40
−10
0
100 5k 10k
Cross talk C.T. (dB)
VCC = 28 V
f = 1 kHz
RL = 8 Ω
Vout = 0.775Vrms
(0dBm)
−70
−80
−30
−20
30 300 500 30k 150k 00k50 1k 3k
−60
−50
−40
−10
0
100 5k
10k
C.T. – Rg
Cross talk C.T. (dB)
Frequency f (Hz) Singnal source resistance Rg (Ω)
VCC = 28 V
f = 1 kHz
Pout = 2 W
RL = 8 Ω
DUAL OPE.
0.03
0.01
−40
0.05
0.1
0.2
−20 0 60 40
20 80 100
HEAT SINK
80 × 80 × 2 mm Aℓ (7ºC/W)
Output power Pout (W)
Singnal source resistance Rg (Ω)
Vno – Rg
Supply voltage VCC (V)
Pout – VCC
Output DC voltage VOUT (V)
ICCQ, VOUT – VCC
THD – Ta
Total harmonic distoriont THD (%)
VCC = 28 V
RL = 8 Ω
0.2
0
1.0
1.2
30 300 500 30k 50k100k50 1k 3k
0.4
0.6
0.8
1.4
1.6
100 5k
10k
RL = 4 Ω
f = 1 kHz
RL = 8 Ω/4 Ω
THD = 10 %
4
0
16
10
8
12
20
24
14 18 22 26 30 34 38 42
8
VOUT
Vin = 0
0
0
60
120
180
240
8 16 32 24
ICCQ
32
24
8
16
0
Output noise voltage VNO (mV
rms)
Quiescent current ICCQ (mA)
Supply voltage VCC (V) Ambient temperature Ta (°C)
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TA8216HQ
ICCQ – Ta
Vno – Ta
VCC = 28 V
RL = 8 Ω
40
30
−40
50
60
70
−20 0 60 40 20 80 100
HEAT SINK
80 × 80 × 2 mm Aℓ (7ºC/W)
80
Power dissipation PD (W)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Output noise voltage VNO (mV
rms)
PD – Pout
PD – Pout
VCC = 28 V
RL = 8 Ω
Rg = 10 kΩ
0.1
0
−40
0.2
0.3
0.4
−20 0 60 40 20 80 100
HEAT SINK
80 × 80 × 2 mm Aℓ (7ºC/W)
0.5
f = 1kHz
RL = 4 Ω
DUAL Operation
4
0
8
8
12
VCC =24 V
12 16 28 2420 36 40
24
16
32
20
20
VCC = 37 V
f = 1kHz
RL = 8 Ω
DUAL Operation
4
0
0
8
12
20
4 8 20 1612 28 32
24
THD = 1%
10%
28 V
23 V
24
16
Quiescent current ICCQ (mA)
Power dissipation PD (W)
Output power Pout (W) Output power Pout (W)
0
0
10
25
25
50 100 17575
1
5
15
20
30
125 150
1: INFINITE HEAT SINK
2: 4.1°C/W Aℓ HEAT SINK
3: 9.5°C/W Aℓ HEAT SINK
2
3
Allowable power dissipation PD MAX (w)
PD MAX – Ta
f = 1kHz
RL = 4 Ω/8 Ω
8 12 16 28 2420 36 4032
RL = 4 Ω8
20
16
24
12
8
0
4
PD MAX – VCC
Maximum power dissipation PD MAX (W)
Ambient temperature Ta (°C) Supply voltage VCC (V)
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TA8216HQ
Package Dimensions
Weight: 4.04 g (typ.)
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TA8216HQ
(1) Use of Sn-63Pb solder Bath
· solder bath temperature
= 230°C
· dipping time
= 5 seconds
· the number of times = once
· use of R-type flux
(2) Use of Sn-3.0Ag-0.5Cu solder Bath
· solder bath temperature
= 245°C
· dipping time
= 5 seconds
· the number of times = once
· use of R-type flux
• Solderability
About solderability, following conditions were confirmed
030619EBF
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
• This product generates heat during normal operation. However, substandard performance or malfunction may
cause the product and its peripherals to reach abnormally high temperatures.
The product is often the final stage (the external output stage) of a circuit. Substandard performance or
malfunction of the destination device to which the circuit supplies output may cause damage to the circuit or to the
product.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The products described in this document are subject to the foreign exchange and foreign trade laws.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
RESTRICTIONS ON P RODUCT USE
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