Advance Technical Information PolarTM P & N-Channel Power MOSFETs Common Drain Topology FMP36-015P P CH. N CH. - 150V 150V - 22A 36A RDS(on) 110m 40m trr(typ) 228ns 150ns VDSS 43 ID25 T1 5 34 T2 11 22 Symbol Test Conditions Maximum Ratings TJ TJM Tstg TL 1.6mm (0.062 in.) from case for 10s VISOL 50/60HZ, RMS, t=1s, leads-to-tab FC Mounting force - 55 ... +150 150 - 55 ... +150 C C C 300 C 2500 V~ 20..120 / 4.5..27 N/lb. ISOPLUS i4-PakTM 1 Isolated Tab 5 Symbol Test Conditions Characteristic Values Min. Typ. Max. CP Coupling capacitance between shorted pins and mounting tab in the case dS ,dA dS ,dA pin - pin pin - backside metal 40 pF Features z Weight 1.7 5.5 mm mm 9 g z z P - CHANNEL z z Symbol Test Conditions VDSS TJ = 25C to 150C -150 V VDGR TJ = 25C to 150C, RGS = 1M -150 V VGSS Continuous 20 V z VGSM Transient 30 V z ID25 TC = 25C - 22 A IDM TC = 25C, pulse width limited by TJM - 90 A IA TC = 25C - 36 A EAS TC = 25C 1.5 J PD TC = 25C 125 W Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation Avalanche rated Low QG Low Drain-to-Tab capacitance Low package inductance Maximum Ratings Advantages z z Low gate drive requirement High power density Low drain to ground capacitance Fast switching Applications z z z z z DC and AC motor drives Class AB audio amplifiers Multi-phase DC to DC converters Industrial battery chargers Switching power supplies DS100034(08/08) (c) 2008 IXYS CORPORATION, All rights reserved http://store.iiic.cc/ FMP36-015P Symbol Test Conditions2 (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250 A -150 VGS(th) VDS = VGS, ID = - 250A - 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = -10V, ID = -18A, Note 1 gfs VDS = -10V, ID = -18A, Note 1 V - 4.5 V 100 nA -10 A - 250 A TJ = 125C 110 m 11 Ciss Coss VGS = 0V, VDS = - 25 V, f = 1MHz Crss 19 S 3100 pF 610 pF 100 pF td(on) Resistive Switching Times 21 ns tr VGS = -10V, VDS = 0.5 z VDSS, ID = -18A 31 ns td(off) RG = 3.3 (External) 36 ns tf 15 ns Qg(on) 55 nC 20 nC 18 nC Qgs VGS= -10V, VDS = 0.5 z ISOPLUS i4-PakTM Outline VDSS, ID = -18A Qgd Ref: IXYS CO 0077 R0 1.0 C/W RthJC RthCS C/W 0.15 Drain-Source Diode Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions2 IS VGS = 0V - 22 A ISM Repetitive, pulse width limited by TJM -140 A VSD IF = -18A, VGS = 0 V, Note 1 - 3.3 V trr IF = -18A, di/dt = 100 A/s 228 ns QRM VR = - 75V, VGS = 0V 2.0 C -17.6 A IRM IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 http://store.iiic.cc/ 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 FMP36-015P N - CHANNEL Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 150 V VDGR TJ = 25C to 150C; RGS = 1M 150 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 36 A IDM TC = 25C, pulse width limited by TJM 150 A IA EAS TC = 25C TC = 25C 50 1.0 A J PD TC = 25C 125 W Symbol Test Conditions2 (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250 A 150 VGS(th) VDS = VGS, ID = 250A 3.0 IGSS VGS = 20 V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 31A, (Note 1) gfs VDS = 10V, ID = 31A, (Note 1) TJ = 150C Ciss Coss V VGS = 0V, VDS = 25 V, f = 1 MHz Crss 14 5.5 V 100 nA 25 250 A A 33 40 m 24 S 2250 pF 660 pF 185 pF td(on) Resistive Switching Times 27 ns tr VGS = 10V, VDS = 0.5 z VDSS, ID = 31A 38 ns td(off) RG = 10 (External) 76 ns tf 35 ns Qg(on) 70 nC 20 nC 38 nC Qgs VGS= 10V, VDS = 0.5 z VDSS, ID = 31A Qgd 1.0 C/W RthJC RthCS 0.15 (c) 2008 IXYS CORPORATION, All rights reserved http://store.iiic.cc/ C/W FMP36-015P Source-Drain Diode Symbol Test Conditions3 IS VGS = 0V ISM Characteristic Values TJ = 25C unless otherwise specified) Min. Typ. Max. 36 A Repetitive, pulse width limited by TJM 150 A VSD IF = 62A, VGS = 0V, Note 1 1.5 V trr IF = 25A, -di/dt = 100A/s 150 ns QRM VR = 100V, VGS = 0V 2.0 C Note 1: Pulse test, t 300s, duty cycle, d 2 %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right IXYS reserves the right to change limits, test conditions, and dimensions. http://store.iiic.cc/