High Conductance Ultra Fast Diode
Sourced from Process 1R. See MMBD1201-1205 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
1N4150 / FDLL4150
Symbol Parameter Value Units
WIV Workin g Inverse Voltage 50 V
IOAverage Rectified Current 200 mA
IFDC Forwa rd Current 400 mA
ifRecurrent Peak Forward Current 600 mA
if(surge) Peak Forward Surge Curren t
Pulse width = 1.0 second
Pulse width = 1.0 microsecond 1.0
4.0 A
A
Tstg Storage Temperature Range -65 to +200 °C
TJOperating Junction Temperature 175 °C
Symbol Characteristic Max Units
1N / FDLL 4150
PDTotal D evice Dissipation
Derate above 25°C500
3.33 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 300 °C/W
COLOR BAND MARKING
DEVICE 1ST BAND 2ND BAND
FDLL4150 BLACK ORANGE
LL-34
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
DO-35
1N4150 / FDLL4150
Discrete POWER & Signal
Technologies
ã1997 Fairchild Semiconductor Corporation
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
BVBreakdown Voltage IR = 5.0
µ
A75 V
IRReverse Current VR = 50 V
VR = 50 V, TA = 150°C100
100 nA
µ
A
VFForward Vol tage IF = 1.0 mA
IF = 10 mA
IF = 50 mA
IF = 100 mA
IF = 200 mA
540
660
760
820
0.87
620
740
860
920
1.0
mV
mV
mV
mV
V
CODiode Capacitance VR = 0, f = 1.0 MHz 2.5 pF
TRR Reverse Recovery Time IF = IR = 10 mA-200 mA, RL = 100Ω
IF = IR =200 mA-400 mA,RL = 100Ω4.0
6.0 nS
nS
TFR Forward Recovery Time IF = 200 mA, VFR = 1.0 V 10 nS
1N4150 / FDLL4150
High Conductance Ultra Fast Diode
(continued)
TRADEMARKS
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
First Production
Full Production
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