TC74HC4060AP/AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC4060AP, TC74HC4060AF 14-Stage Binary Counter/Oscillator The TC74HC4060A is a high speed CMOS 14-STAGE BINARY COUNTER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The oscillator configuration allows designs using either RC or crystal oscillator circuits, or an external clock may be used. The clear input resets the counter to a low level on all outputs and disables the oscillator. A high CLR accomplishes this reset function. A negative transition on the clock input ( I) increments the counter Ten levels of divided output are provided; 4 stage thru 10 stage and 12 stage thru 14 stage. At the last stage (Q14), a 1/16384 divided frequency is obtained. The I input and CLR input are equipped with protection circuits against static discharge or transient excess voltage. TC74HC4060AP TC74HC4060AF Features * High speed: fmax = 58 MHz (typ.) at VCC = 5 V * Low power dissipation: ICC = 4 A (max) at Ta = 25C * High noise immunity: VNIH = VNIL = 28% VCC (min) * Output drive capability: 10 LSTTL loads * * Symmetrical output impedance: |IOH| = IOL = 4 mA (min) tpHL Balanced propagation delays: tpLH - * Wide operating voltage range: VCC (opr) = 2 to 6 V * Oscillator configuration: RC or crystal oscillator * Pin and function compatible with 4060B Weight DIP16-P-300-2.54A SOP16-P-300-1.27A : 1.00 g (typ.) : 0.18 g (typ.) Pin Assignment Start of commercial production 1987-11 1 2014-03-01 TC74HC4060AP/AF IEC Logic Symbol Truth Table Inputs I Function CLR Counter is reset to zero state. X H O output goes to high level. O output goes to low level. L Count up one step. L No Change System Diagram 2 2014-03-01 TC74HC4060AP/AF Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range VCC -0.5 to 7 V DC input voltage VIN -0.5 to VCC + 0.5 V VOUT -0.5 to VCC + 0.5 V Input diode current IIK 20 mA Output diode current IOK 20 mA DC output current IOUT 25 mA DC VCC/ground current ICC 50 mA Power dissipation PD 500 (DIP) (Note 2)/180 (SOP) mW Storage temperature Tstg -65 to 150 C DC output voltage Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 500 mW in the range of Ta = -40 to 65C. From Ta = 65 to 85C a derating factor of -10 mW/C shall be applied until 300 mW. Operating Range (Note) Characteristics Symbol Rating Unit Supply voltage VCC 2 to 6 V Input voltage VIN 0 to VCC V VOUT 0 to VCC V Operating temperature Topr -40 to 85 C Input rise and fall time tr, tf Output voltage 0 to 1000 (VCC = 2.0 V) 0 to 500 (VCC = 4.5 V) ns 0 to 400 (VCC = 6.0 V) Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. 3 2014-03-01 TC74HC4060AP/AF Electrical Characteristics DC Characteristics Characteristics High-level input voltage Low-level input voltage High-level output voltage VOH VOH Max Min Max 2.0 1.50 1.50 4.5 3.15 3.15 6.0 4.20 4.20 2.0 0.50 0.50 4.5 1.35 1.35 6.0 1.80 1.80 2.0 1.9 2.0 1.9 4.5 4.4 4.5 4.4 6.0 5.9 6.0 5.9 IOH = -4 mA 4.5 4.18 4.31 4.13 IOH = -5.2 mA 6.0 5.68 5.80 5.63 2.0 1.8 2.0 1.8 4.5 4.0 4.5 4.0 6.0 5.5 5.9 5.5 2.0 0.0 0.1 0.1 4.5 0.0 0.1 0.1 6.0 0.0 0.1 0.1 IOL = 4 mA 4.5 0.17 0.26 0.33 IOL = 5.2 mA 6.0 0.18 0.26 0.33 2.0 0.0 0.2 0.2 4.5 0.0 0.5 0.5 6.0 0.1 0.5 0.5 VIN = VIH or VIL VIN = VIH or VIL IOH = -20 A IOL = 20 A VOL (Qn) Low-level output voltage Typ. IOH = -20 A (O, O ) Low-level output voltage Min VIL (Qn) High-level output voltage VCC (V) VIH VOL (O, O ) VIN = VIH or VIL VIN = VIH or VIL Ta = -40 to 85C Ta = 25C Test Condition Symbol IOL = 20 A Unit V V V V V V Input leakage current IIN VIN = VCC or GND 6.0 0.1 1.0 A Quiescent supply current ICC VIN = VCC or GND 6.0 4.0 40.0 A 4 2014-03-01 TC74HC4060AP/AF Timing Requirements (input: tr = tf = 6 ns) Characteristics Symbol Minimum pulse width tW (L) ( I ) tW (H) Minimum pulse time (CLR) Minimum removal time Clock frequency Ta = 25C Test Condition Typ. Limit Limit 2.0 75 95 4.5 15 19 6.0 13 16 2.0 75 95 4.5 15 19 6.0 13 16 2.0 100 125 4.5 20 25 6.0 17 21 2.0 6 5 4.5 30 24 6.0 35 28 Test Condition Min Typ. Max Unit 4 8 ns 36 53 ns 6 14 ns trem f Unit VCC (V) tW (H) Ta = -40 to 85C ns ns ns MHz AC Characteristics (CL = 15 pF, VCC = 5 V, Ta = 25C, input: tr = tf = 6 ns) Characteristics Output transition time Symbol tTLH tTHL Propagation delay time tpLH ( I -Q4) tpHL Propagation delay time difference (Qn-Qn + 1) Propagation delay time (CLR) Maximum clock frequency tpd CL = 15 pF (Qn, Qn + 1) tpHL 19 34 ns fmax 33 58 MHz 5 2014-03-01 TC74HC4060AP/AF AC Characteristics (CL = 50 pF, input: tr = tf = 6 ns) Characteristics Output transition time Propagation delay time tTLH tTHL tpLH tpHL ( I -Q4) Propagation delay time difference tpd CL = 50 pF (Qn, Qn + 1) (Qn-Qn + 1) Propagation delay time tpHL (CLR) Maximum clock frequency fmax Input capacitance CIN Power dissipation capacitance CPD Note: Ta = -40 to 85C Ta = 25C Test Condition Symbol Unit VCC (V) Min Typ. Max Min Max 2.0 30 75 95 4.5 8 15 19 6.0 7 13 16 2.0 170 300 375 4.5 41 60 75 6.0 30 51 64 2.0 32 75 95 4.5 7 15 19 6.0 5 13 16 2.0 85 195 245 4.5 23 39 49 6.0 17 33 42 2.0 6 12 5 4.5 30 50 24 6.0 35 65 28 5 10 10 pF 27 pF (Note) ns ns ns ns MHz CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPDVCCfIN + ICC When CR or Crystal oscillation circuit is adopted, the dynamic power dissipation will be greater than the above calculation, because these oscillation circuits spend much supply current. 6 2014-03-01 TC74HC4060AP/AF Switching Characteristics Test Waveform Typical Clock Drive Circuits External Clock Drive Typical RC Circuit 7 Typical Crystal Circuit 2014-03-01 TC74HC4060AP/AF Package Dimensions Weight: 1.00 g (typ.) 8 2014-03-01 TC74HC4060AP/AF Package Dimensions Weight: 0.18 g (typ.) 9 2014-03-01 TC74HC4060AP/AF RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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