APTC80DDA15T3 Dual Boost chopper VDSS = 800V RDSon = 150m max @ Tj = 25C ID = 28A @ Tc = 25C Super Junction MOSFET Power Module Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction 13 14 CR1 CR2 22 7 23 8 Features * Q2 Q1 26 4 27 3 29 30 31 15 16 R1 28 27 26 25 23 22 * * 20 19 18 29 16 30 15 31 14 13 32 2 3 4 7 * * 32 8 10 11 12 - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a single boost of twice the current capability All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ... Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25C Tc = 80C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Max ratings 800 28 21 110 30 150 277 24 0.5 670 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com 1-6 APTC80DDA15T3 - Rev 0 September, 2004 Absolute maximum ratings APTC80DDA15T3 All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Test Conditions VGS = 0V, ID = 375A VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V Test Conditions VGS = 0V VDS = 25V f = 1MHz Test Conditions 50% duty cycle T c = 100C Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge IF = 60A VR = 667V di/dt=200A/s 50 375 150 3.9 150 m V nA Max Unit A pF nC 10 13 83 ns 35 486 J 278 850 J 342 Min 1000 IF = 60A IF = 120A IF = 60A trr Typ 4507 2092 108 180 Inductive switching @125C VGS = 15V VBus = 533V ID = 28A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 533V ID = 28A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 533V ID = 28A, R G = 2.5 Maximum Average Forward Current IF(A V) Min Unit V 90 Tj = 25C Tj = 125C Maximum Reverse Leakage Current 3 Max 22 VR=1000V IRM 2.1 VGS = 10V VBus = 400V ID = 28A Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Typ Tj = 25C Tj = 125C VGS = 10V, ID = 14A VGS = VDS, ID = 2mA VGS = 20 V, VDS = 0V Diode ratings and characteristics VF Min 800 Typ Max 250 500 Tj = 125C 60 1.9 2.2 1.7 Tj = 25C 280 Tj = 125C 350 Tj = 25C 760 Tj = 125C 3600 Unit V A A 2.5 V ns nC X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. APT website - http://www.advancedpower.com 2-6 APTC80DDA15T3 - Rev 0 September, 2004 Symbol BVDSS APTC80DDA15T3 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K Min R 25 1 1 exp B25 / 85 - T T 25 Unit C/W V 150 125 100 4.7 110 M4 Temperature sensor NTC RT = 2500 -40 -40 -40 Max 0.45 0.9 Typ 68 4080 Max C N.m g Unit k K T: Thermistor temperature RT : Thermistor value at T 28 17 1 12 APT website - http://www.advancedpower.com 3-6 APTC80DDA15T3 - Rev 0 September, 2004 Package outline APTC80DDA15T3 Thermal Impedance (C/W) Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.45 0.9 0.4 0.35 0.7 0.3 0.25 0.5 0.2 0.3 0.15 Single Pulse 0.1 0.1 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 80 VGS =15&10V 6.5V 60 50 6V 40 5.5V 30 5V 20 4.5V 10 60 40 TJ =25C 20 TJ =125C 4V T J=-55C 0 0 0 0 5 10 15 20 25 VDS , Drain to Source Voltage (V) 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 30 Normalized to V GS=10V @ 14A 1.3 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 80 VGS=10V 1.2 VGS=20V 1.1 1 0.9 25 20 15 10 5 0 0.8 0 10 20 30 40 I D, Drain Current (A) 50 60 25 50 75 100 125 150 TC, Case Temperature (C) APT website - http://www.advancedpower.com 4-6 APTC80DDA15T3 - Rev 0 September, 2004 ID, Drain Current (A) 70 ID, Drain Current (A) 100 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 50 100 150 Maximum Safe Operating Area Threshold Voltage vs Temperature 1000 1.2 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 0 TJ, Junction Temperature (C) TJ, Junction Temperature (C) 1.0 0.9 0.8 100 0 50 100 1 1000 Coss Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Ciss 10ms Single pulse TJ =150C 100ms 0 TC, Case Temperature (C) 10000 1ms 1 150 Capacitance vs Drain to Source Voltage 100000 100s limited by RDSon 10 0.7 -50 C, Capacitance (pF) V GS=10V ID= 14A 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=28A T J=25C 14 V DS =160V 12 VDS=400V 10 8 VDS=640V 6 4 2 0 0 40 APT website - http://www.advancedpower.com 80 120 160 200 Gate Charge (nC) 5-6 APTC80DDA15T3 - Rev 0 September, 2004 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTC80DDA15T3 APTC80DDA15T3 Delay Times vs Current Rise and Fall times vs Current 50 100 tf 40 V DS=533V RG=2.5 T J=125C L=100H 60 40 t r and tf (ns) t d(on) 20 30 VDS=533V RG=2.5 T J=125C L=100H 20 10 0 0 10 20 30 40 I D, Drain Current (A) 50 10 900 Switching Energy (J) Eon and Eoff (J) 2500 VDS=533V RG=2.5 TJ=125C L=100H 1200 Eon 600 Eoff 300 20 30 40 I D, Drain Current (A) 50 Switching Energy vs Gate Resistance Switching Energy vs Current 1500 V DS=533V ID=28A T J=125C L=100H 2000 1500 Eon 1000 Eoff 500 0 0 10 20 30 40 I D, Drain Current (A) 0 50 350 ZVS 300 250 200 VDS=533V D=50% RG=2.5 TJ=125C TC=125C ZCS 150 100 Hard switching 50 0 6 8 10 12 14 16 18 20 22 24 26 ID, Drain Current (A) IDR , Reverse Drain Current (A) Operating Frequency vs Drain Current 400 Frequency (kHz) tr 5 10 15 20 Gate Resistance (Ohms) 25 Source to Drain Diode Forward Voltage 1000 100 TJ=150C 10 TJ=25C 1 0.2 0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V) "COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 6-6 APTC80DDA15T3 - Rev 0 September, 2004 td(on) and td(off) (ns) t d(off) 80