© 2018 IXYS CORPORATION, All Rights Reserved DS100854B(10/18)
N-Channel Enhancement Mode
IXFP72N30X3M VDSS = 300V
ID25 = 72A
RDS(on)
19m
Features
International Standard Package
Plastic Overmolded Tab
Low RDS(ON) and QG
Avalanche Rated
2500V~ Electrical Isolation
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 300 V
VGS(th) VDS = VGS, ID = 1.5mA 2.5 4.5 V
IGSS VGS = 20V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V 5 A
TJ = 125C 750 A
RDS(on) VGS = 10V, ID = 36A, Note 1 15 19 m
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 300 V
VDGR TJ= 25C to 150C, RGS = 1M300 V
VGSS Continuous 20 V
VGSM Transient 30 V
ID25 TC= 25C, Limited by TJM 72 A
IDM TC= 25C, Pulse Width Limited by TJM 150 A
IATC= 25C36A
EAS TC= 25C1J
dv/dt IS IDM, VDD VDSS, TJ 150°C 20 V/ns
PDTC= 25C36W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
VISOL 50/60 Hz, 1 Minute 2500 V~
MdMounting Torque 1.13 / 10 Nm/lb.in
Weight 2.5 g
(Electrically Isolated Tab)
X3-Class HiPerFETTM
Power MOSFET
Preliminary Technical Information
G = Gate D = Drain
S = Source
OVERMOLDED
TO-220
GDSIsolated Tab
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFP72N30X3M
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
ISVGS = 0V 72 A
ISM Repetitive, pulse Width Limited by TJM 288 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 100 ns
QRM 750 nC
IRM 15 A
IF = 36A, -di/dt = 100A/μs
VR = 100V
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 10V, ID = 36A, Note 1 36 60 S
RGi Gate Input Resistance 1.7
Ciss 5400 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 800 pF
Crss 2 pF
Co(er) 310 pF
Co(tr) 1200 pF
td(on) 22 ns
tr 25 ns
td(off) 86 ns
tf 11 ns
Qg(on) 82 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 36A 25 nC
Qgd 25 nC
RthJC 3.5 C/W
RthCS 0.50 C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 36A
RG = 5 (External)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Terminals: 1 - Gate
2 - Drain
3 - Source
123
OVERMOLDED TO-220
(IXFP...M) oP
© 2018 IXYS CORPORATION, All Rights Reserved
IXFP72N30X3M
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
10
20
30
40
50
60
70
80
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
6V
7V
5V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
0
10
20
30
40
50
60
70
80
00.511.522.53
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
6V
5V
4V
7V
Fig. 4. R
DS(on)
Normalized to I
D
= 36A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 36A
I
D
= 72A
Fig. 5. R
DS(on)
Normalized to I
D
= 36A Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 50 100 150 200 250
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
50
100
150
200
250
300
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
8V
9V
5V
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
- Degrees Centigrade
BV
DSS
/ V
GS(th)
- Normalized
BV
DSS
V
GS(th)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFP72N30X3M
Fig. 7. Input Admittance
0
20
40
60
80
100
120
3.54.04.55.05.56.06.57.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
V
DS
= 10V
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
0 20406080100120140
I
D
- Amperes
g
f s - Siemens
T
J
= - 40
o
C
25
o
C
125
o
C
V
DS
= 10V
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4
V
SD
- Volts
I
S
- Amperes
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 10. Gate Charge
0
2
4
6
8
10
0 102030405060708090
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 150V
I
D
= 36A
I
G
= 10mA
Fig. 11. Capacitance
1
10
100
1,000
10,000
100,000
1 10 100 1000
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Output Capacitance Stored Energy
0
2
4
6
8
10
12
14
0 50 100 150 200 250 300
V
DS
- Volts
E
OSS
- MicroJoules
© 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_72N30X3(25-S301) 7-18-17
IXFP72N30X3M
Fig. 14. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 13. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
1 10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150oC
T
C
= 25oC
Sin
g
le Pulse
25μs
100μs
R
DS(
on
)
Limit
1ms
10ms
100ms
DC
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