OPTOELECTRONICS REFLECTIVE OBJECT SENSORS QRB1133/1134 The QRB1133/1134 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective object passes within its field of view. The area of the optimum response approximates a circle .200 in diameter. Phototransistor output High Sensitivity Low cost plastic housing #26 AWG, 24 inch PVC wire termination Infrared transparent plastic covers for dust protection. _ PACKAGE DIMENSIONS _ 420 "7 be 328 (8.33) won 062 R SHRINK YY NOM TUBING OVE! SOLDER JOINT 226 (5.74) > aT L a | ors .150 (3.81) NOM POINT OF 24.0 (609.60) OPTIMUM MIN #26 AWG RESPONSE .703 (17.86) | .373 (9.47) Oo le 903 (22.94) eJ =>] 603 (15.32) fe I .210 (6.33) =) f $T2177 FUNCTION WIRE COLOR (C) COLLECTOR WHITE (E) EMITTER BLUE (K) CATHODE GREEN (A) ANODE ORANGE NOTES: 1. DIMENSIONS ARE IN INCHES (mm). 2. TOLERANCE |S +.010" (.25) UNLESS OTHERWISE SPECIFIED.REFLECTIVE OBJECT SENSORS OPTOELECTRONICS Storage Temperature 6... nent tn enn eben eee brent ne eee nent bene -40C to + 85C Operating Temperature ... nnn ener ender eet n ee ent Eee eee -40C to + 85C Soldering: Lead Temperature (ITON) occ nn ene ence eee een eee tenet e tenn eens 240C for 5 sec. Lead Temperature (FIOW) 2.0000... e erence tenets eben bees ienevneeennes 260C for 10 sec. &* INPUT DIODE Continuous Forward Current 2.0.0.0. enn e nena bene terete nent b te eeeyerennes 50 mA Reverse Voltage 2... OnE ECE EE EE Dende den ete t erent beeen eens 5.0 Volts Power Dissipation ........0.0 0 nen Erte e eee Den EEE Eee eee eas 100 mw OUTPUT TRANSISTOR Collector-Emitter Voltage 2... nn nen ene e needed e nett ete e eee eenenas 30 Volts Emitter-Collector Voltage... 0... ccc nner nent ee debe brent pee e tat bt Et bebe EEGs 5.0 Volts Collector Current 2.000 nnn e nner ete e ee ented ene eee e tb eeenenneenes 40 mA Power Dissipation ... 0.00 EERE DRED dn ened deen eee cn eenes 100 mw PARAMETER TEST CONDITIONS INPUT DIODE Forward Voltage Ve 1.70 Vv |; =40mA Reverse Leakage Current la _ 100 pA Ve = 2.0V OUTPUT TRANSISTOR Emitter-Collector Breakdown BV eco 5 _ Vv le = 100uA, Ee = 0 Collector-Emitter Breakdown BV ceo 30 _ Vv lc = 1.0 mA, Ee = 0 Collector-Emitter Leakage Ioeo _ 100 nA Vor = 10.0 V, Ee = 0 COUPLED On-State Collector Current QRB1133 lewony 0.20 _ mA lr = 40 mA, Vez = 5 V, D = .150" QRB1134 letony 0.60 3.00 mA I; = 40 mA, Vez = 5 V, D = .150"87 Crosstalk lox _ 1.00 BA I; = 40 mA, Vee = 5V Saturation Voltage Veeisan) _ 0.40 Vv I, = 40 mA, |, = 0.1 mA, D = .150"57! Derate power dissipation linearly 1.67 mW/C above 25C. . AMA flux is recommended. . Methanol or lsepropanol alcohols are recommended as cleaning agents. . Soldering iron Vie" (1.6mm) from housing . Dis the distance from the assembly face to the reflective surface. . Cross talk is the photocurrent measured with current to the input diode and no reflecting surface. . Measured using Eastman Kodak neutral test card with 90% diffused reflecting surface. NO OA Pm Fees