This is information on a product in full production.
March 2014 DocID025499 Rev 3 1/21
STB24N60DM2, STP24N60DM2,
STW24N60DM2
N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus™ low Qg
Power MOSFETs in D2PAK, TO-220 and TO-247 packages
Datasheet
−
production data
Figure 1. Internal schematic diagram
Features
•Extremely low gate charge and input
capacitance
•Lower R
DS(on)
x area vs previous generation
•Low gate input resistance
•100% avalanche tested
•Zener-protected
•Extremely high dv/dt and avalanche
capabilities
Applications
•Switching applications
Description
These FDmesh II Plus™ low Q
g
Power MOSFETs
with intrinsic fast-recovery body diode are
produced using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q
g
. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters and
ideal for bridge topologies and ZVS phase-shift
converters.
D(2, TAB)
G(1)
S(3)
AM01476v1
D
2
PAK
TO-220
TO-247
1
3
2
TAB
123
TAB
123
Order codes V
DS
@
T
Jmax
R
DS(on)
max I
D
STB24N60DM2
650 V 0.20 Ω18 ASTP24N60DM2
STW24N60DM2
Table 1. Device summary
Order codes Marking Package Packaging
STB24N60DM2
24N60DM2
D
2
PAK Tape and reel
STP24N60DM2 TO-220 Tube
STW24N60DM2 TO-247
www.st.com
Contents STB24N60DM2, STP24N60DM2, STW24N60DM2
2/21 DocID025499 Rev 3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
DocID025499 Rev 3 3/21
STB24N60DM2, STP24N60DM2, STW24N60DM2 Electrical ratings
21
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
GS
Gate-source voltage ± 25 V
I
D
Drain current (continuous) at T
C
= 25 °C 18 A
I
D
Drain current (continuous) at T
C
= 100 °C 11 A
I
DM (1)
1. Pulse width limited by safe operating area.
Drain current (pulsed) 72 A
P
TOT
Total dissipation at T
C
= 25 °C 150 W
dv/dt
(2)
2. I
SD
≤ 18 A, di/dt ≤ 400 A/μs; V
DS
peak
< V
(BR)DSS
, V
DD
=400 V.
Peak diode recovery voltage slope 40 V/ns
dv/dt
(3)
3. V
DS
≤ 480 V
MOSFET dv/dt ruggedness 50 V/ns
T
stg
Storage temperature - 55 to 150 °C
T
j
Max. operating junction temperature
Table 3. Thermal data
Symbol Parameter Value Unit
D
2
PAK TO-220 TO-247
R
thj-case
Thermal resistance junction-case max 0.83 °C/W
R
thj-pcb
Thermal resistance junction-pcb max
(1)
1. When mounted on 1 inch² FR-4, 2 Oz copper board
30 °C/W
R
thj-amb
Thermal resistance junction-ambient max 62.5 50 °C/W
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not
repetitive (pulse width limited by T
jmax
) 3.5 A
E
AS
Single pulse avalanche energy (starting
T
j
=25°C, I
D
= I
AR
; V
DD
=50) 180 mJ
Electrical characteristics STB24N60DM2, STP24N60DM2, STW24N60DM2
4/21 DocID025499 Rev 3
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 5. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage I
D
= 1 mA, V
GS
= 0 600 V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= 600 V 1.5 μA
V
DS
= 600 V, T
C
=125 °C 100 μA
I
GSS
Gate-body leakage
current (V
DS
= 0) V
GS
= ± 25 V ±10 μA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 μA 345V
R
DS(on)
Static drain-source
on-resistance V
GS
= 10 V, I
D
= 9 A 0.175 0.200 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0
- 1055 - pF
C
oss
Output capacitance - 56 - pF
C
rss
Reverse transfer
capacitance -2.4-
pF
C
oss eq.(1)
1. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent output
capacitance VDS = 0 to 480 V, VGS = 0 - 259 - pF
RG
Intrinsic gate
resistance f = 1 MHz, ID = 0 - 7 - Ω
QgTotal gate charge VDD = 480 V, ID = 18 A,
VGS = 10 V
(see Figure 17)
-29-nC
Qgs Gate-source charge - 6 - nC
Qgd Gate-drain charge - 12 - nC
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
DD
= 300 V, I
D
= 9 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 16 and 21)
-15-ns
t
r
Rise time - 8.7 - ns
t
d(off)
Turn-off delay time - 60 - ns
t
f
Fall time - 15 - ns
DocID025499 Rev 3 5/21
STB24N60DM2, STP24N60DM2, STW24N60DM2 Electrical characteristics
21
Table 8. Source drain diode
Symbol Parame ter Test conditions Min. Typ. Max. Unit
I
SD(1)
1. Limited by maximum junction temperature
Source-drain current - 18 A
I
SDM
(2)
2. Pulse width limited by safe operating area.
Source-drain current (pulsed) - 72 A
V
SD(3)
3. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage I
SD
= 18 A, V
GS
= 0 - 1.6 V
t
rr
Reverse recovery time
I
SD
= 18 A, di/dt = 100 A/μs
V
DD
= 60 V (see Figure 18)
- 155 ns
Q
rr
Reverse recovery charge - 956 nC
I
RRM
Reverse recovery current - 12.5 A
t
rr
Reverse recovery time I
SD
= 18 A, di/dt = 100 A/μs
V
DD
= 60 V, T
j
= 150 °C
(see Figure 18)
- 200 ns
Q
rr
Reverse recovery charge - 1450 nC
I
RRM
Reverse recovery current - 13 A
Electrical characteristics STB24N60DM2, STP24N60DM2, STW24N60DM2
6/21 DocID025499 Rev 3
2.1 Electrical characteristics (curves)
Figure 2. Safe opera ting a rea fo r D
2
PAK, TO-220 Figure 3. Thermal impedance D
2
PAK, TO-220
I
D
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single
pulse
AM16164v1
Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedan ce for TO-247
Figure 6. Output characteristics Figure 7. Transfer characteristics
I
D
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single
pulse
AM16165v1
I
D
30
20
10
0010 V
DS
(V)
(A)
515
40
VGS= 4 V
VGS= 5 V
VGS= 7 V
VGS= 8, 9, 10 V
5
15
25
35
VGS= 6 V
20
AM16166v1
I
D
15
10
5
004V
GS
(V)
8
(A)
2610
20
VDS= 17 V
25
30
35
40
AM16167v1
DocID025499 Rev 3 7/21
STB24N60DM2, STP24N60DM2, STW24N60DM2 Electrical characteristics
21
Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance
Figure 10. Capacitance variations Figure 11. Output capacitance stored energy
Figure 12. Normalized gate threshold voltage vs
temperature Figure 13. Normalized on-resistance vs
temperature
VDS
V
GS
6
4
2
005Q
g
(nC)
(V)
20
8
10 15
10
V
DD
=480 V
I
D
=18 A
25
300
200
100
0
400
500
V
DS
(V)
V
DS
12
30 35
AM16168v1
R
DS(on)
0.174
0.172
0.170
0.168
04I
D
(A)
(Ω)
28
0.176
V
GS
=10V
10
612 14
0.178
0.180
0.182
0.184
0.186
16
AM16169v1
C
1000
100
10
1
0.1 10 V
DS
(V)
(pF)
1100
Ciss
Coss
Crss
AM15467v1
E
oss
2
1
0
0100 V
DS
(V)
(µJ)
400
3
200 300
4
5
500 600
6
7
8
AM15472v1
V
GS(th)
0.9
0.8
0.7
0.6
-50 0T
J
(°C)
(norm)
-25
1.0
75
25 50 100
I
D
= 250 µA
1.1
AM15473v1
R
DS(on)
1.7
1.3
0.9
0.5
-50 0T
J
(°C)
(norm)
-25 75
25 50 100
0.7
1.1
1.5
1.9
2.1
I
D
= 9 A
2.3
V
GS
= 10 V
AM15464v1
Electrical characteristics STB24N60DM2, STP24N60DM2, STW24N60DM2
8/21 DocID025499 Rev 3
Figure 14. Source -drain diode forward
characteristics Figure 15. Normalized V
(BR)DSS
vs temperature
V
SD
04I
SD
(A)
(V)
210
68
0
0.2
0.4
0.6
0.8
1
1.2 T
J
=-50°C
T
J
=150°C T
J
=25°C
12 14 16
1.4
AM15468v1
V
(BR)DSS
-50 0T
J
(°C)
(norm)
-25 75
25 50 100
0.93
0.95
0.97
0.99
1.01
1.05
1.07
1.03
I
D
= 1mA
1.09
1.11
AM15466v1
DocID025499 Rev 3 9/21
STB24N60DM2, STP24N60DM2, STW24N60DM2 Test circuits
21
3 Test circuits
Figure 16. Switching times test circuit for
resistive load Figure 17. Gate charge test circuit
Figure 18. Test circuit for inductive load
switching and diode recovery times Figure 19. Unclamped inductive load test circuit
Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
B
B
RG
G
FAST
DIODE
D
S
L=100μH
μF
3.3 1000
μFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μFVDD
$0Y
9%5'66
9''
9''
9'
,'0
,'
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
Package mechanical data STB24N60DM2, STP24N60DM2, STW24N60DM2
10/21 DocID025499 Rev 3
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
DocID025499 Rev 3 11/21
STB24N60DM2, STP24N60DM2, STW24N60DM2 Package mechanical data
21
Figure 22. D²PAK (TO-263) drawing
0079457_T
Package mechanical data STB24N60DM2, STP24N60DM2, STW24N60DM2
12/21 DocID025499 Rev 3
Table 9. D²PAK (TO-263) mechanical data
Dim. mm
Min. Typ. Max.
A4.40 4.60
A1 0.03 0.23
b0.70 0.93
b2 1.14 1.70
c0.45 0.60
c2 1.23 1.36
D8.95 9.35
D1 7.50
E 10 10.40
E1 8.50
e2.54
e1 4.88 5.28
H 15 15.85
J1 2.49 2.69
L2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R0.4
V2 0° 8°
DocID025499 Rev 3 13/21
STB24N60DM2, STP24N60DM2, STW24N60DM2 Package mechanical data
21
Figure 23. D²PAK footprint
(a)
a. All dimension are in millimeters
16.90
12.20
9.75
3.50
5.08
1.60
Footprint
Package mechanical data STB24N60DM2, STP24N60DM2, STW24N60DM2
14/21 DocID025499 Rev 3
Figure 24. TO-220 type A drawing
DocID025499 Rev 3 15/21
STB24N60DM2, STP24N60DM2, STW24N60DM2 Package mechanical data
21
Table 10. TO-220 type A m echanical data
Dim. mm
Min. Typ. Max.
A4.40 4.60
b0.61 0.88
b1 1.14 1.70
c0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e2.40 2.70
e1 4.95 5.15
F1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅
P3.75 3.85
Q2.65 2.95
Package mechanical data STB24N60DM2, STP24N60DM2, STW24N60DM2
16/21 DocID025499 Rev 3
Figure 25. TO-2 47 drawing
0075325_G
DocID025499 Rev 3 17/21
STB24N60DM2, STP24N60DM2, STW24N60DM2 Package mechanical data
21
Table 11. TO-247 mechanical data
Dim. mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
Packaging mechanical data STB24N60DM2, STP24N60DM2, STW24N60DM2
18/21 DocID025499 Rev 3
5 Packaging mechanical data
Figure 26. Tape
P1
A0 D1
P0
F
W
E
D
B0
K0
T
User direction of feed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
B1
For machine ref. only
including draft and
radii concentric around B0
AM08852v1
Top cover
tape
DocID025499 Rev 3 19/21
STB24N60DM2, STP24N60DM2, STW24N60DM2 Packaging mechanical data
21
Figure 27. Reel
Table 12. D²PAK (TO-263) tape and reel mechanical data
Tape Reel
Dim. mm Dim. mm
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base qty 1000
P2 1.9 2.1 Bulk qty 1000
R50
T 0.25 0.35
W 23.7 24.3
A
D
B
Full radius G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
T
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Revision history STB24N60DM2, STP24N60DM2, STW24N60DM2
20/21 DocID025499 Rev 3
6 Revision history
Table 13. Document revision history
Date Revision Changes
12-Nov-2013 1 First release.
17-Jan-2014 2
– Document status promoted from preliminary data to production
data
– Modified: dv/dt (peak diode recovery voltage slope) value in
Table 2
– Modified: I
AR
value in Table 4
– Modified: I
DSS
and V
GS(th)
values in Table 5
– Minor text changes
03-Mar-2014 3
– Modified: I
AR
value in Table 4
– Added: note 1.: Limited by maximum junction temperature
– Minor text changes
DocID025499 Rev 3 21/21
STB24N60DM2, STP24N60DM2, STW24N60DM2
21
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