For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 1
HMC667LP2 / 667LP2E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
v02.1110
General Description
Features
Functional Diagram
Typical Applications
The HMC667LP2(E) is ideal for:
• WiMAX, WiBro & Fixed Wireless
• SDARS & WLAN Receivers
• Infrastructure & Repeaters
• Access Points
• Telematics & DMB
Electrical Speci cations, TA = +25° C
Parameter Vdd = +3 Vdc Vdd = +5 Vdc Units
Min. Typ. Max. Min. Typ. Max.
Frequency Range 2300 - 2700 2300 - 2700 MHz
Gain 14 17.5 16 19 dB
Gain Variation Over Temperature 0.01 0.01 dB/ °C
Noise Figure 0.9 1.2 0.75 1.1 dB
Input Return Loss 10 12 dB
Output Return Loss 15 14 dB
Output Power for 1 dB
Compression (P1dB) 9.5 11.5 13.5 16.5 dBm
Saturated Output Power (Psat) 12.5 17 dBm
Output Third Order Intercept (IP3) 22 29.5 dBm
Supply Current (Idd) 24 32 59 75 mA
The HMC667LP2(E) is a GaAs PHEMT MMIC Low
Noise Ampli er that is ideal for WiMAX, WLAN and
xed wireless receivers operating between 2300
and 2700 MHz. This self-biased LNA has been
optimized to provide 0.75 dB noise gure, 19 dB
gain and +29.5 dBm output IP3 from a single supply
of +5V. Input and output return losses are excellent
and the LNA requires minimal external matching and
bias decoupling components. The HMC667LP2(E)
can also operate from a +3V supply for lower power
applications.
Low Noise Figure: 0.75 dB
High Gain: 19 dB
High Output IP3: +29.5 dBm
Single Supply: +3V to +5V
6 Lead 2x2mm DFN Package: 4 mm2
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 2
Input Return Loss vs. Temperature [1] Output Return Loss vs. Temperature [1]
Broadband Gain & Return Loss
HMC667LP2 / 667LP2E
v02.1110
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
[1] Vdd = 5V
-25
-20
-15
-10
-5
0
5
10
15
20
25
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Vdd=5V
Vdd=3V
FREQUENCY (GHz)
RESPONSE (dB)
S11
S21
S22
-20
-15
-10
-5
0
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3
+25C
+85C
-40C
FREQUENCY (GHz)
RETURN LOSS (dB)
-20
-15
-10
-5
0
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3
+25C
+85C
-40C
FREQUENCY (GHz)
RETURN LOSS (dB)
Gain vs. Temperature
12
14
16
18
20
22
24
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3
+25C
+85C
-40C
FREQUENCY (GHz)
GAIN (dB)
Vdd=5V
Vdd=3V
P1dB vs. Temperature
6
8
10
12
14
16
18
20
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3
+25C
+85C
-40C
FREQUENCY (GHz)
P1dB (dBm)
Vdd=5V
Vdd=3V
Reverse Isolation vs. Temperature [1]
-50
-45
-40
-35
-30
-25
-20
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3
+25C
+85C
-40C
FREQUENCY (GHz)
ISOLATION (dB)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 3
Psat vs. Temperature
HMC667LP2 / 667LP2E
v02.1110
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
Output IP3 and Idd vs.
Supply Voltage @ 2300 MHz
[1] Measurement reference plane shown on evaluation PCB drawing.
Output IP3 vs. Temperature
Noise Figure vs. Temperature [1]
Output IP3 and Idd vs.
Supply Voltage @ 2500 MHz
16
18
20
22
24
26
28
30
32
34
36
16
22
28
34
40
46
52
58
64
70
76
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
IP3 (dB)
Idd (mA)
Voltage Supply (V)
16
18
20
22
24
26
28
30
32
34
36
16
22
28
34
40
46
52
58
64
70
76
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
IP3 (dB)
Idd (mA)
Voltage Supply (V)
16
18
20
22
24
26
28
30
32
34
36
2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3
+25C
+85C
-40C
FREQUENCY (GHz)
IP3 (dBm)
Vdd=5V
Vdd=3V
6
8
10
12
14
16
18
20
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3
+25C
+85C
-40C
FREQUENCY (GHz)
Psat (dBm)
Vdd=5V
Vdd=3V
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3
Vdd=5V
Vdd=3V
FREQUENCY (GHz)
NOISE FIGURE (dB)
+85C
+25C
-40C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 4
Output Power, Gain & PAE @ 2500 MHz [1]
HMC667LP2 / 667LP2E
v02.1110
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
Output Power, Gain & PAE @ 2500 MHz [2]
Output Power, Gain & PAE @ 2300 MHz [1] Output Power, Gain & PAE @ 2300 MHz [2]
[1] Vdd = 5V [2] Vdd = 3V
-10
-5
0
5
10
15
20
25
-25 -20 -15 -10 -5 0
Pout
Gain
PAE
INPUT POWER (dBm)
Pout (dBm), Gain (dB), PAE (%)
-10
-5
0
5
10
15
20
25
-25 -20 -15 -10 -5 0
Pout
Gain
PAE
INPUT POWER (dBm)
Pout (dBm), Gain (dB), PAE (%)
-10
-5
0
5
10
15
20
25
-25 -20 -15 -10 -5 0
Pout
Gain
PAE
INPUT POWER (dBm)
Pout (dBm), Gain (dB), PAE (%)
-10
-5
0
5
10
15
20
25
-25 -20 -15 -10 -5 0
Pout
Gain
PAE
INPUT POWER (dBm)
Pout (dBm), Gain (dB), PAE (%)
P1dB, Gain, & Noise Figure
vs. Supply Voltage @ 2300 MHz
P1dB, Gain, & Noise Figure
vs. Supply Voltage @ 2500 MHz
8
10
12
14
16
18
20
22
24
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
P1dB
Gain
NF
Gain (dB) & P1dB (dBm)
NOISE FIGURE (dB)
Voltage Supply (V)
8
10
12
14
16
18
20
22
24
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
P1dB
Gain
NF
Gain (dB) & P1dB (dBm)
NOISE FIGURE (dB)
Voltage Supply (V)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 5
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +6 Vdc
RF Input Power (RFIN) +10 dBm
Channel Temperature 150 °C
Continuous Pdiss (T= 85 °C)
(derate 5.88 mW/°C above 85 °C) 0.38 W
Thermal Resistance
(Channel to Ground Paddle) 170 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC667LP2 / 667LP2E
v02.1110
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
Noise Figure vs. Vdd w/ SDARS Tune [2]
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
2.25 2.3 2.35 2.4 2.45
Vdd=5V
Vdd=3V
FREQUENCY (GHz)
NOISE FIGURE (dB)
Gain & Return Loss w/ SDARS Tune [1]
-25
-20
-15
-10
-5
0
5
10
15
20
25
2.25 2.3 2.35 2.4 2.45
S11
S22
S21
FREQUENCY
(
GHz
)
RESPONSE (dB)
[1] Vdd = 5V [2] Measurement reference plane shown on evaluation PCB drawing.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 6
Outline Drawing
HMC667LP2 / 667LP2E
v02.1110
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC667LP2 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] 667
XXX
HMC667LP2E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 667
XXX
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 3-Digit lot number XXX
Package Information
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 7
Pin Number Function Description Interface Schematic
1, 2, 5 GND These pins and package bottom must
be connected to RF/DC ground.
3 RFIN This pin is DC coupled
See the application circuit for off-chip components
4 RFOUT This pin is AC coupled
and matched to 50 Ohms.
6 Vdd Power supply voltage. Bypass capacitors
are required. See application circuit.
Pin Descriptions
Components for Selected Band
HMC667LP2 / 667LP2E
v02.1110
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
Components C1 L1 Evaluation PCB Number
Broadband 2.7 pF 2.0 nH 121891
SDARS 2.2 pF 4.3 nH 122404
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 8
Evaluation PCB
Item Description
J1 - J2 PCB Mount SMA Connector
J3 - J4 DC Pin
C1 2.7 pF Capacitor, 0402 Pkg.
C2 1000 pF Capacitor, 0402 Pkg.
C3 10 nF Capacitor, 0603 Pkg.
C4 2.2 μF Capacitor, CASE-A Tantalum
L1 2 nH Inductor, 0402 Pkg.
U1 HMC667LP2(E) Ampli er
PCB [2] 117163 Evaluation PCB
[1] When requesting an evaluation board, please reference the
appropriate evaluation PCB number listed in the table
“Components for Selected Band” on previous page
[2] Circuit Board Material: Rogers 4350
List of Materials for Evaluation PCB [1]
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appro-
priate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
HMC667LP2 / 667LP2E
v02.1110
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
