SIEMENS BAV 70S Silicon Switching Diode Array * For high speed switching applications * Common cathode 4 3 * Internal (galvanic) isolated Diodes Arrays 6 in one package rez az at 2 3 8 5 [+ 1 yesoseo4 | ) a | 1 By 3 Type Marking | Ordering Code Pin Configuration Package BAV 70S |A4s _ [Q62702-A1097 1/4=A1 |2/5=A2 |3/6=C1/2|SOT-363 Maximum Ratings per Diode Parameter Symbol Values Unit Diode reverse voltage Va 70 Vv Peak reverse voltage Vem 70 Forward current Ie 200 mA Surge forward current, t= 1 us les 4.5 A Total Power dissipation Prot mw Tg = 85C 250 Junction temperature Tj 150 C Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction ambient 7 Fina < 530 KAW Junction - soldering point Finis < 260 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm* Cu 336 11.96 Semiconductor GroupSIEMENS BAV 70S Electrical Characteristics at T,=25C, unless otherwise specified Parameter Symbol Values Unit min. |typ. jmax, DC characteristics per Diode Breakdown voltage Vier) Vv Ker) = 100 pA 70 - - Forward voltage Ve mV fe=1mA - - 715 JF =10mA - - 855 le =50mA - - 1000 Ip = 150 mA - - 1250 Reverse current la pA Va = 70V, Ty = 25C - - 2.5 VR = 25 V, Ta = 150C - - 30 Va =70V, Ta = 150C - - 50 AC characteristics per Diode Diode capacitance Cp pF Va =0V, f=1 MHz - - 1.5 Reverse recovery time br ns fe=10 mA, fp = 10mMA, RL = 1002 fy Measured at 1 MA - - 6 Semiconductor Group 337 11.96SIEMENS BAV 70S Forward current [pe = f (T,*; Ts) Forward current / = f (Ve) * Package mounted on epoxy Ta = 25C BAY 70 EHBOOOGS 300 150 ; Te mA mA . : | t 200 N 100 No r NL | NS N \ 150 NI N N N 100 V 50 50 ) ol. 0 20 40 60 680 100 120 rr 05 0.5 1.0 Vv 1.5 a AUS Permissible Pulse Load Rings = f(t) Tin Tire or ? Or + I {eae t cH EP NONANNT A 10 Qo au 2 Qo & = th o a Semiconductor Group 338 te Ve Permissible Pulse Load /fmax//roc = ftp) 102 1 or | a HEE ema eo | Tit 74 el artis HTN TC 10" 10~ 107 ef, | mi 11.96SIEMENS BAV 70S Forward voltage V- = f (Ta) Reverse current /p = f (Ta) BAY 70 EHBOO0068 BAY 70 EHBOOOES nA v V, I 104 5 0.5 103 10? 5 10! 0 50 100 c 150 Th Semiconductor Group 339 411.96