2SK1299(L), 2SK1299(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
123
123
4
4
DPAK-1
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
2SK1299(L), 2SK1299(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 100 V
Gate to source voltage VGSS ±20 V
Drain current ID3A
Drain peak current ID(pulse)*112 A
Body to drain diode reverse drain current IDR 3A
Channel dissipation Pch*220 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
2SK1299(L), 2SK1299(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
voltage V(BR)DSS 100 — — V ID = 10 mA, VGS = 0
Gate to source breakdown
voltage V(BR)GSS ±20——V I
G
= ±100 µA, VDS = 0
Gate to source leak current IGSS ——±10 µAV
GS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS — — 100 µAV
DS = 80 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V
Static Drain to source on state
resistance RDS(on) — 0.25 0.35 ΩID = 2 A, VGS = 10 V *1
— 0.30 0.45 ΩID = 2 A, VGS = 4 V 1*
Forward transfer admittance |yfs| 2.4 4.0 — S ID = 2 A, VDS = 10 V *1
Input capacitance Ciss — 400 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 165 — pF f = 1 MHz
Reverse transfer capacitance Crss — 45 — pF
Turn-on delay time td(on) —5 —nsI
D
= 2 A, VGS = 10 V,
Rise time tr— 35 — ns RL = 15 Ω
Turn-off delay time td(off) — 160 — ns
Fall time tf—60—ns
Body to drain diode forward
voltage VDF — 1.0 — V IF = 3 A, VGS = 0
Body to drain diode reverse
recovery time trr — 135 — ns IF = 3 A, VGS = 0,
diF/dt = 50 A/µs
Note: 1. Pulse test
2SK1299(L), 2SK1299(S)
4
50 1000 Case Temperature TC (°C) 150
10
Channel Dissipation Pch (W)
Power vs. Temperature Derating
20
30
Maximum Safe Operation Area
Drain Current ID (A)
5001002052
50
10
5
2
0.2
1
20
1
0.5
0.1
0.05 200
Drain to Source Voltage VDS (V)
100 µs
1 ms
Ta = 25°C
10 µs
Operation in this area
is limited by RDS (on)
DC Operation
(T
C
= 25°C)
PW = 10 ms (1 Shot)
10 50 1000
Typical Output Characteristics
Drain to Source Voltage VDS (V)
Drain Current ID (A)
108642
10
8
6
4
2
0
VGS = 2.5 V
Pulse Test
5 V
3 V
3.5 V
10 V 4.5 V 4 V
Typical Transfer Characteristics
3
Gate to Source Voltage VGS (V)
42105
1
2
3
4
5
0
Drain Current ID (A)
VDS = 10 V
Pulse Test
25°C
75°C TC = –25°C
2SK1299(L), 2SK1299(S)
5
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
6
Gate to Source Voltage VGS (V)
842010
0.8
1.2
1.6
2.0
0
0.4
Drain to Source Saturation Voltage
VDS (on) (V)
Pulse Test
ID = 5 A
2 A
1 A
2
Drain Current ID (A)
510.5 20
0.2
0.5
1
2
5
0.2
0.1
0.05 10
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on State Resistance
RDS (on) (Ω)
VGS = 4 V
10 V
Pulse Test
80
Case Temperature TC (°C)
120400
0.1
0.2
0.3
0.4
0.5
–40
0160
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
RDS (on) (Ω)
ID = 5 A
Pulse Test
VGS = 4 V
10 V
2 A
1 A
5 A
2 A
1 A
Forward Transfer Admittance
vs. Drain Current
10
5
2
1
0.5
0.2
0.05 1.0 0.2 0.5 15
Drain Current ID (A) 2
Forward Transfer Admittance yfs (S)
0.1
TC = –25°C
VDS = 10 V
Pulse Test
25°C
75°C
2SK1299(L), 2SK1299(S)
6
500
200
100
50
20
10
5
0.1 0.2 1 10
Reverse Drain Current IDR (A)
2
0.5 5
Body to Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
di/dt = 50 A/µs
VGS = 0, Ta = 25°C
Pulse Test
Typical Capacitance vs.
Drain to Source Voltage
1000
100
10
1
Capacitance C (pF)
01020 50
Drain to Source Voltage VDS (V)
30 40
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
200
160
120
80
40
08 24
32
Gate Charge Qg (nc)
16
20
16
12
8
4
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
400
VDS
VGS
VDD = 80 V
50 V
25 V
ID = 3 A
VDD = 25 V
50 V
80 V
Switching Characteristics
500
200
100
50
10
5
0.1 0.2 1 10
Drain Current ID (A)
2
0.5 5
Switching Time t (ns)
20
td (off)
VGS = 10 V, VDD
PW = 2µs, duty < 0.1 %
td (on)
tf
tr
=
..30 V
2SK1299(L), 2SK1299(S)
7
10
8
6
4
2
0 0.4 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
0.8
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
VGS = 0, – 5 V
Pulse Test
VGS = 10 V
5 V
3
1.0
0.3
0.1
0.03
0.01
10 µ1 m 10 m 100 m
Pulse Width PW (s)
100 µ110
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γs (t)
θch–c (t) = γs (t) · θch–c
θch–c = 6.25°C/W, TC = 25°C
PW D =
PW
T
T
TC = 25°C
PDM
D = 1
0.5
0.05
1 Shot Pulse
0.2
0.1
0.02
0.01
Vin Monitor
Vout Monitor
RL
50 Ω
Vin = 10 V
D.U.T
.
VDD = 30 V
.
Switching Time Test Circuit
Vin 10 %
90 %
90 %
90 %
10 %
td (on) td (off)
trtf
Vout 10 %
Wavewforms
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
DPAK (L)-(1)
—
Conforms
0.42 g
Unit: mm
6.5 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
0.55 ± 0.1
5.5 ± 0.5 1.7 ± 0.5
16.2 ± 0.5
3.1 ± 0.5
5.4 ± 0.5
1.15 ± 0.1
2.29 ± 0.5 2.29 ± 0.5
0.8 ± 0.1
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