Edition April 4, 1996
6251-365-1DS
HAL525
Hall Effect Sensor IC
Edition March 10, 1999
6251-465-2DS
MICRONAS
INTERMETALL
MICRONAS
INTERMETALL
MICRONASMICRONAS
MICRONAS
INTERMETALL
MICRONAS
INTERMETALL
MICRONASMICRONAS
HAL525
MICRONAS INTERMETALL2
Contents
Page Section Title
3 1. Introduction
3 1.1. Features
4 1.2. Marking Code
4 1.3. Operating Junction Temperature Range
4 1.4. Hall Sensor Package Codes
4 1.5. Solderability
5 2. Functional Description
6 3. Specifications
6 3.1. Outline Dimensions
6 3.2. Dimensions of Sensitive Area
6 3.3. Positions of Sensitive Areas
7 3.4. Absolute Maximum Ratings
7 3.5. Recommended Operating Conditions
8 3.6. Electrical Characteristics
9 3.7. Magnetic Characteristics
14 4. Application Notes
14 4.1. Ambient Temperature
14 4.2. Extended Operating Conditions
14 4.3. Start-up Behavior
14 4.4. EMC
16 5. Data Sheet History
HAL525
MICRONAS INTERMETALL 3
Hall Effect Sensor Family
in CMOS technology
Release Notes: Revision bars indicate significant
changes to the previous edition.
1. Introduction
The HAL525 is a Hall switch produced in CMOS technol-
ogy. The sensor includes a temperature-compensated
Hall plate with active offset compensation, a compara-
tor, and an open-drain output transistor. The comparator
compares the actual magnetic flux through the Hall plate
(Hall voltage) with the fixed reference values (switching
points). Accordingly , the output transistor is switched on
or off.
The HAL525 has a latching behavior and requires a
magnetic north and south pole for correct functioning.
The output turns low with the magnetic south pole on the
branded side of the package and turns high with the
magnetic north pole on the branded side. The output
does not change if the magnetic field is removed. For
changing the output state, the opposite magnetic field
polarity must be applied.
The active offset compensation leads
to constant mag-
netic characteristics over supply voltage and tempera-
ture range. In addition, the magnetic parameters are ro-
bust against mechanical stress effects.
The sensor is designed for industrial and automotive ap-
plications and operates with supply voltages from 3.8 V
to 24 V in the ambient temperature range from –40 °C
up to 150 °C.
The HAL525 is available in an SMD-package (SOT-89A)
and in a leaded version (TO-92UA). The introduction of
the additional SMD-package SOT-89B is planned for
1999.
1.1. Features:
– switching offset compensation at typically 115 kHz
– typical BON: 14 mT at room temperature
– typical BOFF: –14 mT at room temperature
– typical temperature coefficient of magnetic switching
points is –2000 ppm/K
– operates from 3.8 V to 24 V supply voltage
– overvoltage protection at all pins
– reverse-voltage protection at VDD-pin
– magnetic characteristics are robust against mechani-
cal stress effects
– short-circuit protected open-drain output by thermal
shut down
– operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
– on-chip temperature compensation circuitry mini-
mizes shifts of magnetic characteristics over tempera-
ture
– constant switching points over a wide supply voltage
range
– the decrease of magnetic flux density caused by rising
temperature in the sensor system is compensated by
a built-in negative temperature coefficient of the mag-
netic characteristics
– ideal sensor for window lifter, ignition timing, and revo-
lution counting in extreme automotive and industrial
environments
– EMC corresponding to DIN 40839
HAL525
MICRONAS INTERMETALL4
1.2. Marking Code
All Hall sensors have a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.
Type Temperature Range
A K E C
HAL525 525A 525K 525E 525C
1.3. Operating Junction Temperature Range
A: TJ = –40 °C to +170 °C
K: TJ = –40 °C to +140 °C
E: TJ = –40 °C to +100 °C
C: TJ = 0 °C to +100 °C
The Hall sensors from MICRONAS INTERMETALL are
specified to the chip temperature (junction temperature
TJ).
The relationship between ambient temperature (TA) and
junction temperature is explained in section 4.1. on page
14.
1.4. Hall Sensor Package Codes
Type: 525
HALXXXPA-T Temperature Range: A, K, E, or C
Package: SF for SOT-89B
SO for SOT-89A
UA for TO-92UA
→ Type: 525
→ Package: TO-92UA
→ Temperature Range: TJ = –40 °C to +100 °C
Example: HAL525UA-E
Hall sensors are available in a wide variety of packaging
versions and quantities. For more detailed information,
please refer to the brochure: “Ordering Codes for Hall
Sensors”.
1.5. Solderability
all packages: according to IEC68-2-58
OUT
GND
3
2
1VDD
Fig. 1–1: Pin configuration
HAL525
MICRONAS INTERMETALL 5
2. Functional Description
The Hall effect sensor is a monolithic integrated circuit
that switches in response to magnetic fields. If a
magnetic field with flux lines perpendicular to the
sensitive area is applied to the sensor, the biased Hall
plate forces a Hall voltage proportional to this field. The
Hall voltage is compared with the actual threshold level
in the comparator. The temperature-dependent bias
increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induction
of magnets at higher temperatures. If the magnetic field
exceeds the threshold levels, the open drain output
switches to the appropriate state. The built-in hysteresis
eliminates oscillation and provides switching behavior of
output without bouncing.
Magnetic offset caused by mechanical stress is com-
pensated for by using the “switching offset compensa-
tion technique”. Therefore, an internal oscillator pro-
vides a two phase clock. The Hall voltage is sampled at
the end of the first phase. At the end of the second
phase, both sampled and actual Hall voltages are aver-
aged and compared with the actual switching point. Sub-
sequently, the open drain output switches to the ap-
propriate state. The time from crossing the magnetic
switching level to switching of output can vary between
zero and 1/fosc.
Shunt protection devices clamp voltage peaks at the
Output-pin and VDD-pin together with external series
resistors. Reverse current is limited at the VDD-pin by an
internal series resistor up to –15 V. No external reverse
protection diode is needed at the VDD-pin for reverse
voltages ranging from 0 V to –15 V.
Fig. 2–1: HAL525 block diagram
HAL5xx
Temperature
Dependent
Bias
Switch
Hysteresis
Control
Comparator Output
VDD
1
OUT
3
Clock
Hall Plate
GND
2
HAL525
Short Circuit &
Overvoltage
Protection
Reverse
Voltage &
Overvoltage
Protection
t
VOL
VOUT
1/fosc = 9 µs
Fig. 2–2: Timing diagram
VOH
B
BON
fosc
t
t
tft
IDD
t
HAL525
MICRONAS INTERMETALL6
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
Plastic Small Outline Transistor Package
(SOT-89A)
Weight approximately 0.04 g
Dimensions in mm
4.55±0.1
2.6±0.1
0.40.4
1.7
0.4
1.5
3.0
0.06±0.04
branded side
SPGS7001-7-A3/1E
sensitive area
top view
y
123
2
4±0.2
1.53±0.05
0.125
0.7
x1 x2
Fig. 3–2:
Plastic Small Outline Transistor Package
(SOT-89B)
Weight approximately 0.035 g
Dimensions in mm
2.55±0.1
0.40.4
0.4
1.5
3.0
0.06±0.04
branded side
SPGS0022-3-A3/1E
sensitive area
top view
y
123
4±0.2
1.15±0.05
0.125
0.3
4.55±0.1
1.7
2
x1 x2
Note: This package will be introduced in 1999. Samples
are available. Contact the sales offices for high volume
delivery.
0.75±0.2
Fig. 3–3:
Plastic Transistor Single Outline Package
(TO-92UA)
Weight approximately 0.12 g
Dimensions in mm
sensitive area
0.55
branded side
0.36
0.8
0.3
45°
y
14.0
min.
1.271.27
(2.54)
123
0.42
1.5±0.05 4.06±0.1
3.05±0.1
0.48
SPGS7002-7-A/2E
3.1±0.2
x2x1
For all package diagrams, a mechanical tolerance of
±50 µm applies to all dimensions where no tolerance is
explicitly given.
3.2. Dimensions of Sensitive Area
0.25 mm x 0.12 mm
3.3. Positions of Sensitive Areas
SOT-89A SOT-89B TO-92UA
|x2 – x1| / 2 < 0.2 mm
y = 0.98 mm
± 0.2 mm y = 0.95 mm
± 0.2 mm y = 1.0 mm
± 0.2 mm
HAL525
MICRONAS INTERMETALL 7
3.4. Absolute Maximum Ratings
Symbol Parameter Pin No. Min. Max. Unit
VDD Supply Voltage 1 –15 281) V
–VPTest Voltage for Supply 1 –242) – V
–IDD Reverse Supply Current 1 – 501) mA
IDDZ Supply Current through
Protection Device 1 –2003) 2003) mA
VOOutput Voltage 3 –0.3 281) V
IOContinuous Output On Current 3 – 501) mA
IOmax Peak Output On Current 3 – 2503) mA
IOZ Output Current through
Protection Device 3 –2003) 2003) mA
TSStorage Temperature Range –65 150 °C
TJJunction Temperature Range –40
–40 150
1704) °C
1) as long as TJmax is not exceeded
2) with a 220 Ω series resistance at pin 1 corresponding to test circuit 1
3) t<2 ms
4) t<1000h
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only . Functional operation of the device at these or any other conditions beyond those indicated in the
“Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maxi-
mum ratings conditions for extended periods may affect device reliability.
3.5. Recommended Operating Conditions
Symbol Parameter Pin No. Min. Max. Unit
VDD Supply Voltage 1 3.8 24 V
IOContinuous Output On Current 3 0 20 mA
VOOutput Voltage
(output switched off) 3 0 24 V
HAL525
MICRONAS INTERMETALL8
3.6. Electrical Characteristics at TJ = –40 °C to +170 °C , VDD = 3.8 V to 24 V , as not otherwise specified in Conditions
Typical Characteristics for TJ = 25 °C and VDD = 12 V
Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions
IDD Supply Current 1 2.3 3 4.2 mA TJ= 25 °C
IDD Supply Current over
Temperature Range 1 1.6 3 5.2 mA
VDDZ Overvoltage Protection
at Supply 1 – 28.5 32 V IDD = 25 mA, TJ = 25 °C,
t = 20 ms
VOZ Overvoltage Protection at Output 3 – 28 32 V IOH = 25 mA, TJ = 25 °C,
t = 20 ms
VOL Output Voltage 3 – 130 280 mV IOL = 20 mA, TJ= 25 °C
VOL Output Voltage over
Temperature Range 3 – 130 400 mV IOL = 20 mA
IOH Output Leakage Current 3 – 0.06 0.1 µAOutput switched off,
TJ = 25 °C, VOH = 3.8 to 24 V
IOH Output Leakage Current over
Temperature Range 3 – – 10 µAOutput switched off,
TJ ≤150 °C, VOH = 3.8 to 24V
fosc Internal Oscillator
Chopper Frequency – 95 115 – kHz TJ = 25 °C,
fosc Internal Oscillator Chopper Fre-
quency over T emperature Range – 85 115 – kHz TJ = –30 °C to 100 °C
fosc Internal Oscillator Chopper Fre-
quency over T emperature Range – 73 115 – kHz
ten(O) Enable Time of Output after
Setting of VDD 1 – 30 70 µs VDD = 12 V
B > BON + 2 mT or
B < BOFF – 2 mT
trOutput Rise T ime 3 – 75 400 ns VDD = 12 V,
RL= 820 Ohm
tfOutput Fall T ime 3 – 50 400 ns
R
L =
820
Ohm
,
CL = 20 pF
RthJSB
case
SOT-89A
SOT-89B
Thermal Resistance Junction
to Substrate Backside – – 150 200 K/W Fiberglass Substrate
30 mm x 10 mm x 1.5mm,
pad size see Fig. 3–4
RthJA
case
TO-92UA
Thermal Resistance Junction
to Soldering Point – – 150 200 K/W
Fig. 3–4: Recommended pad size SOT-89x
Dimensions in mm
5.0
2.0
2.0
1.0
HAL525
MICRONAS INTERMETALL 9
3.7. Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
–40 °C 11.8 15.8 19.2 –19.2 –15.8 –11.8 27.4 31.6 35.8 0 mT
25 °C11 14 17 –17 –14 –11 24 28 32 –2 0 2 mT
100 °C 8 11 15.5 –15.5 –11 –8 18.5 22 28.7 0 mT
140 °C 6.5 10 14 –14 –10 –6.5 16 20 26 0 mT
170 °C 5 8.5 13 –13 –8.5 –5 12 17 25 0 mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
Fig. 3–5: Definition of magnetic switching points
BHYS
Output Voltage
0BOFF BON
VOL
VO
B
HAL525
MICRONAS INTERMETALL10
–20
–15
–10
–5
0
5
10
15
20
0 5 10 15 20 25 30 V
mT
VDD
BON
BOFF
HAL525
BON
BOFF
TA = –40 °C
TA = 25 °C
TA = 170 °C
TA = 100 °C
Fig. 3–6: Typical magnetic switching points
versus supply voltage
–20
–15
–10
–5
0
5
10
15
20
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
VDD
BON
BOFF
BON
BOFF
TA = –40 °C
TA = 25 °C
TA = 170 °C
TA = 100 °C
Fig. 3–7: Typical magnetic switching points
versus supply voltage
HAL525
–20
–15
–10
–5
0
5
10
15
20
–50 0 50 100 150 200 °C
mT
TA, TJ
BON
BOFF
BONmax
BONmin
BOFFmax
BOFFmin
Fig. 3–8: Magnetic switching points
versus temperature
VDD = 4.5 V...24 V
VDD = 3.8 V
BONtyp
BOFFtyp
HAL525
Note: In the diagram “Typical magnetic switching points
versus ambient temperature” the curves for BONmin,
BONmax, BOFFmin, and BOFFmax refer to junction tem-
perature, whereas typical curves refer to ambient
temperature.
HAL525
MICRONAS INTERMETALL 11
–15
–10
–5
0
5
10
15
20
25
–15–10 –5 0 5 10 15 20 25 30 35 V
mA
VDD
IDD TA = –40 °C
TA = 25 °C
TA=170 °C
Fig. 3–9: Typical supply current
versus supply voltage
HAL525
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
12345678
V
mA
VDD
IDD TA = –40 °C
TA = 25 °C
TA = 170 °C
TA = 100 °C
Fig. 3–10: Typical supply current
versus supply voltage
HAL525
0
1
2
3
4
5
–50 0 50 100 150 200 °C
mA
TA
IDD
VDD = 3.8 V
VDD = 12 V
VDD = 24 V
Fig. 3–11: Typical supply current
versus ambient temperature
HAL525
0
20
40
60
80
100
120
140
160
–50 0 50 100 150 200 °C
kHz
TA
fosc VDD = 3.8 V
VDD = 4.5 V...24 V
Fig. 3–12: T yp. internal chopper frequency
versus ambient temperature
HAL525
HAL525
MICRONAS INTERMETALL12
0
50
100
150
200
250
300
350
400
0 5 10 15 20 25 30 V
mV
VDD
VOL
TA = –40 °C
TA = 25 °C
TA = 170 °C
IO = 20 mA
TA = 100 °C
Fig. 3–13: Typical output low voltage
versus supply voltage
HAL525
0
100
200
300
400
500
600
34567
V
mV
VDD
VOL
TA= –40 °C
TA=25 °C
TA=170 °C
IO = 20 mA
TA=100 °C
Fig. 3–14: Typical output low voltage
versus supply voltage
HAL525
0
100
200
300
400
–50 0 50 100 150 200 °C
mV
TA
VOL
Fig. 3–15: Typical output low voltage
versus ambient temperature
VDD = 3.8 V
VDD = 4.5 V
VDD = 24 V
IO = 20 mA
HAL525
15 20 25 30 35 V
mA
VOH
IOH
TA= –40 °C
TA=170 °C
TA=150 °C
TA=100 °C
TA=25 °C
10–6
10–5
10–4
10–3
10–2
10–1
100
101
102
103
104
Fig. 3–16: Typical output high current
versus output voltage
HAL525
HAL525
MICRONAS INTERMETALL 13
–50 0 50 100 150 200 °C
µA
TA
IOH
VOH = 24 V
VOH = 3.8 V
10–5
10–4
10–3
10–2
10–1
100
101
102
Fig. 3–17: Typical output leakage current
versus ambient temperature
HAL525
–30
–20
–10
0
10
20
30
0.01 0.10 1.00 10.00 100.001000.00
dBµA
f
IDD
VDD = 12 V
TA = 25 °C
Quasi-Peak-
Measurement
max.spurious
signals
1 10 100 1000 MHz
Fig. 3–18: Typ. spectrum of supply current
HAL525
0
10
20
30
40
50
60
70
80
0.01 0.10 1.00 10.00 100.001000.00
1 10 100 1000 MHz
dBmV
f
VDD
VP = 12 V
TA = 25 °C
Quasi-Peak-
Measurement
test circuit 2
max.spurious
signals
Fig. 3–19: Typ. spectrum of supply voltage
HAL525
HAL525
MICRONAS INTERMETALL14
4. Application Notes
4.1. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient tem-
perature TA).
TJ = TA + ∆T
At static conditions, the following equation is valid:
∆T = IDD * VDD * Rth
For typical values, use the typical parameters. For worst
case calculation, use the max. parameters for IDD and
Rth, and the max. value for VDD from the application.
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
TAmax = TJmax – ∆T
4.2. Extended Operating Conditions
All sensors fulfill the electrical and magnetic characteris-
tics when operated within the Recommended Operating
Conditions (see page 7).
Supply Voltage Below 3.8 V
Typically, the sensors operate with supply voltages
above 3 V, however, below 3.8 V some characteristics
may be outside the specification.
Note: The functionality of the sensor below 3.8 V has not
been tested. For special test conditions, please contact
MICRONAS INTERMETALL.
4.3. Start-up Behavior
Due to the active offset compensation, the sensors have
an initialization time (enable time ten(O)) after applying
the supply voltage. The parameter ten(O) is specified in
the Electrical Characteristics (see page 8).
During the initialization time, the output state is not de-
fined and the output can toggle. After ten(O), the output
will be low if the applied magnetic field B is above BON.
The output will be high if B is below BOFF.
For magnetic fields between BOFF and BON, the output
state of the HAL sensor after applying VDD will be either
low or high. In order to achieve a well-defined output
state, the applied magnetic field must be above BONmax,
respectively, below BOFFmin.
4.4. EMC
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see figures 4–1 and 4–2).
The series resistor and the capacitor should be placed
as closely as possible to the HAL sensor.
The EMC performance has been tested in a lab environ-
ment with EMC optimized printed circuit board layouts.
The results in the following tables show that function
classes A and C could be reached in these investiga-
tions. Depending on customer circuit designs and lay-
outs, EMC results obtained in those applications may be
different from the ones obtained in the MICRONAS
INTERMETALL lab investigations.
Test Circuits for Electromagnetic Compatibility
Test pulses VEMC corresponding to DIN 40839.
Note: The international standard ISO 7637 is similar to
the used product standard DIN 40839.
OUT
GND
3
2
1V
DD
4.7 nF
VEMC
RV
220 ΩRL680 Ω
Fig. 4–1: Test circuit 1
OUT
GND
3
2
1V
DD
4.7 nF
VEMC
VP
RV
220 Ω
RL1.2 kΩ
20 pF
Fig. 4–2: Test circuit 2
HAL525
MICRONAS INTERMETALL 15
Interferences conducted along supply lines in 12 V onboard systems
Product standard: DIN 40839 part 1
Test-
Pulse Severity
Level Us in V Test
circuit Pulses/
Time Function
Class Remarks
1 IV –100 1 5000 C 5 s pulse interval
2 IV 100 1 5000 C 0.5 s pulse interval
3a IV –150 21 h A
3b IV 100 21 h A
4 IV –7 2 5 A
5 IV 86.5 1 10 C 10 s pulse interval
Electrical transient transmission by capacitive and inductive coupling via lines other than the supply lines
Product standard: DIN 40839 part 3
Test-
Pulse Severity
Level Us in V Test
circuit Pulses/
Time Function
Class Remarks
1 IV –30 2 500 A 5 s pulse interval
2 IV 30 2 500 A 0.5 s pulse interval
3a IV –60 210 min A
3b IV 40 210 min A
Radiated Disturbances
Product standard: DIN 40839 part 4
Test Conditions
– Temperature: Room temperature (22...25 °C)
– Supply voltage: 13 V
– Lab Equipment: TEM cell 220 MHz
with adaptor board 455 mm, device 80 mm over ground
– Frequency range: 5...220 MHz; 1 MHz steps
– Test circuit 2
– tested with static magnetic fields
Tested Devices and Results
Type Field Strength during test Modulation Result
HAL525 > 200 V/m –output voltage stable on the level high or low1)
HAL525 > 200 V/m 1 kHz 80 % output voltage stable on the level high or low1)
1) low level < 0.4 V, high level > 90% of VDD
HAL525
MICRONAS INTERMETALL16
5. Data Sheet History
1. Final data sheet: “HAL525 Hall Effect Sensor IC”,
April 23, 1997, 6251-465-1DS. First release of the
final data sheet.
2. Final data sheet: “HAL525 Hall Effect Sensor IC”,
March 10, 1999, 6251-465-2DS. Second release of
the final data sheet. Major changes:
– additional package SOT-89B
– outline dimensions for SOT-89A and TO-92UA
changed
– electrical characteristics changed
– section 4.2.: Extended Operating Conditions added
– section 4.3.: Start-up Behavior added
MICRONAS INTERMETALL GmbH
Hans-Bunte-Strasse 19
D-79108 Freiburg (Germany)
P.O. Box 840
D-79008 Freiburg (Germany)
Tel. +49-761-517-0
Fax +49-761-517-2174
E-mail: docservice@intermetall.de
Internet: http://www.intermetall.de
Printed in Germany
Order No. 6251-485-2DS
All information and data contained in this data sheet are with-
out any commitment, are not to be considered as an offer for
conclusion of a contract nor shall they be construed as to
create any liability . Any new issue of this data sheet invalidates
previous issues. Product availability and delivery dates are ex-
clusively subject to our respective order confirmation form; the
same applies to orders based on development samples deliv-
ered. By this publication, MICRONAS INTERMETALL GmbH
does not assume responsibility for patent infringements or
other rights of third parties which may result from its use.
Reprinting is generally permitted, indicating the source. How-
ever, our prior consent must be obtained in all cases.