MICRONAS INTERMETALL HAL525 Hall Effect Sensor IC MICRONAS Edition March April 4,10, 1996 1999 6251-365-1DS 6251-465-2DS HAL525 Contents Page Section Title 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. Introduction Features Marking Code Operating Junction Temperature Range Hall Sensor Package Codes Solderability 5 2. Functional Description 6 6 6 6 7 7 8 9 3. 3.1. 3.2. 3.3. 3.4. 3.5. 3.6. 3.7. Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Recommended Operating Conditions Electrical Characteristics Magnetic Characteristics 14 14 14 14 14 4. 4.1. 4.2. 4.3. 4.4. Application Notes Ambient Temperature Extended Operating Conditions Start-up Behavior EMC 16 5. Data Sheet History 2 MICRONAS INTERMETALL HAL525 Hall Effect Sensor Family in CMOS technology 1.1. Features: Release Notes: Revision bars indicate significant changes to the previous edition. - typical BON: 14 mT at room temperature 1. Introduction - typical temperature coefficient of magnetic switching points is -2000 ppm/K The HAL525 is a Hall switch produced in CMOS technology. The sensor includes a temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain output transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the output transistor is switched on or off. The HAL525 has a latching behavior and requires a magnetic north and south pole for correct functioning. The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. The active offset compensation leads to constant magnetic characteristics over supply voltage and temperature range. In addition, the magnetic parameters are robust against mechanical stress effects. The sensor is designed for industrial and automotive applications and operates with supply voltages from 3.8 V to 24 V in the ambient temperature range from -40 C up to 150 C. - switching offset compensation at typically 115 kHz - typical BOFF: -14 mT at room temperature - operates from 3.8 V to 24 V supply voltage - overvoltage protection at all pins - reverse-voltage protection at VDD-pin - magnetic characteristics are robust against mechanical stress effects - short-circuit protected open-drain output by thermal shut down - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - on-chip temperature compensation circuitry minimizes shifts of magnetic characteristics over temperature - constant switching points over a wide supply voltage range - the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics - ideal sensor for window lifter, ignition timing, and revolution counting in extreme automotive and industrial environments - EMC corresponding to DIN 40839 The HAL525 is available in an SMD-package (SOT-89A) and in a leaded version (TO-92UA). The introduction of the additional SMD-package SOT-89B is planned for 1999. MICRONAS INTERMETALL 3 HAL525 1.2. Marking Code 1.4. Hall Sensor Package Codes All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. HALXXXPA-T Type Temperature Range A HAL525 Temperature Range: A, K, E, or C Package: SF for SOT-89B SO for SOT-89A UA for TO-92UA Type: 525 525A K 525K E 525E C 525C 1.3. Operating Junction Temperature Range A: TJ = -40 C to +170 C K: TJ = -40 C to +140 C E: TJ = -40 C to +100 C Example: HAL525UA-E Type: 525 Package: TO-92UA Temperature Range: TJ = -40 C to +100 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Ordering Codes for Hall Sensors". C: TJ = 0 C to +100 C The Hall sensors from MICRONAS INTERMETALL are specified to the chip temperature (junction temperature TJ). The relationship between ambient temperature (TA) and junction temperature is explained in section 4.1. on page 14. 1.5. Solderability all packages: according to IEC68-2-58 VDD 1 3 OUT 2 GND Fig. 1-1: Pin configuration 4 MICRONAS INTERMETALL HAL525 HAL5xx HAL525 2. Functional Description The Hall effect sensor is a monolithic integrated circuit that switches in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The built-in hysteresis eliminates oscillation and provides switching behavior of output without bouncing. Magnetic offset caused by mechanical stress is compensated for by using the "switching offset compensation technique". Therefore, an internal oscillator provides a two phase clock. The Hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The time from crossing the magnetic switching level to switching of output can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the Output-pin and VDD-pin together with external series resistors. Reverse current is limited at the VDD-pin by an internal series resistor up to -15 V. No external reverse protection diode is needed at the VDD-pin for reverse voltages ranging from 0 V to -15 V. VDD 1 Reverse Voltage & Overvoltage Protection Temperature Dependent Bias Hall Plate Short Circuit & Overvoltage Protection Hysteresis Control Comparator Switch OUT Output 3 Clock GND 2 Fig. 2-1: HAL525 block diagram fosc t B BON t VOUT VOH VOL t IDD 1/fosc = 9 s tf t Fig. 2-2: Timing diagram MICRONAS INTERMETALL 5 HAL525 3. Specifications 4.06 0.1 1.5 0.05 sensitive area x1 0.3 3.1. Outline Dimensions x2 y 3.05 0.1 4.55 0.1 x1 x2 0.125 sensitive area 3.1 0.2 1.7 0.48 0.7 y 2 4 0.2 2.6 0.1 1 2 3 0.75 0.2 0.55 0.36 14.0 min. top view 1 2 3 0.42 0.4 1.53 0.05 0.4 1.27 1.27 0.4 1.5 (2.54) 3.0 branded side branded side 45 0.8 SPGS7002-7-A/2E 0.06 0.04 SPGS7001-7-A3/1E Fig. 3-3: Plastic Transistor Single Outline Package (TO-92UA) Weight approximately 0.12 g Dimensions in mm Fig. 3-1: Plastic Small Outline Transistor Package (SOT-89A) Weight approximately 0.04 g Dimensions in mm For all package diagrams, a mechanical tolerance of 50 m applies to all dimensions where no tolerance is explicitly given. 4.55 0.1 x1 0.125 x2 sensitive area 1.7 0.3 y 2 4 0.2 3.2. Dimensions of Sensitive Area 0.25 mm x 0.12 mm 2.55 0.1 top view 1 2 3 3.3. Positions of Sensitive Areas 1.15 0.05 0.4 0.4 0.4 SOT-89A 1.5 SOT-89B TO-92UA |x2 - x1| / 2 < 0.2 mm 3.0 y = 0.98 mm 0.2 mm branded side y = 0.95 mm 0.2 mm y = 1.0 mm 0.2 mm 0.06 0.04 SPGS0022-3-A3/1E Fig. 3-2: Plastic Small Outline Transistor Package (SOT-89B) Weight approximately 0.035 g Dimensions in mm Note: This package will be introduced in 1999. Samples are available. Contact the sales offices for high volume delivery. 6 MICRONAS INTERMETALL HAL525 3.4. Absolute Maximum Ratings Symbol Parameter Pin No. Min. Max. Unit VDD Supply Voltage 1 -15 281) V -VP Test Voltage for Supply 1 -242) - V -IDD Reverse Supply Current 1 - 501) mA IDDZ Supply Current through Protection Device 1 -2003) 2003) mA VO Output Voltage 3 -0.3 281) V IO Continuous Output On Current 3 - 501) mA IOmax Peak Output On Current 3 - 2503) mA IOZ Output Current through Protection Device 3 -2003) 2003) mA TS Storage Temperature Range -65 150 C TJ Junction Temperature Range -40 -40 150 1704) C 1) as long as T max is not exceeded J 2) with a 220 series resistance at pin 3) t < 2 ms 4) t < 1000h 1 corresponding to test circuit 1 Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions/Characteristics" of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability. 3.5. Recommended Operating Conditions Symbol Parameter Pin No. Min. Max. Unit VDD Supply Voltage 1 3.8 24 V IO Continuous Output On Current 3 0 20 mA VO Output Voltage (output switched off) 3 0 24 V MICRONAS INTERMETALL 7 HAL525 3.6. Electrical Characteristics at TJ = -40 C to +170 C , VDD = 3.8 V to 24 V, as not otherwise specified in Conditions Typical Characteristics for TJ = 25 C and VDD = 12 V Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions IDD Supply Current 1 2.3 3 4.2 mA TJ = 25 C IDD Supply Current over Temperature Range 1 1.6 3 5.2 mA VDDZ Overvoltage Protection at Supply 1 - 28.5 32 V IDD = 25 mA, TJ = 25 C, t = 20 ms VOZ Overvoltage Protection at Output 3 - 28 32 V IOH = 25 mA, TJ = 25 C, t = 20 ms VOL Output Voltage 3 - 130 280 mV IOL = 20 mA, TJ = 25 C VOL Output Voltage over Temperature Range 3 - 130 400 mV IOL = 20 mA IOH Output Leakage Current 3 - 0.06 0.1 A Output switched off, TJ = 25 C, VOH = 3.8 to 24 V IOH Output Leakage Current over Temperature Range 3 - - 10 A Output switched off, TJ 150 C, VOH = 3.8 to 24 V fosc Internal Oscillator Chopper Frequency - 95 115 - kHz TJ = 25 C, fosc Internal Oscillator Chopper Frequency over Temperature Range - 85 115 - kHz TJ = -30 C to 100 C fosc Internal Oscillator Chopper Frequency over Temperature Range - 73 115 - kHz ten(O) Enable Time of Output after Setting of VDD 1 - 30 70 s VDD = 12 V B > BON + 2 mT or B < BOFF - 2 mT tr Output Rise Time 3 - 75 400 ns tf Output Fall Time 3 - 50 400 ns VDD = 12 V, RL = 820 Ohm Ohm, CL = 20 pF RthJSB case SOT-89A SOT-89B Thermal Resistance Junction to Substrate Backside - - 150 200 K/W RthJA case TO-92UA Thermal Resistance Junction to Soldering Point - - 150 200 K/W Fiberglass Substrate 30 mm x 10 mm x 1.5mm, pad size see Fig. 3-4 5.0 2.0 2.0 1.0 Fig. 3-4: Recommended pad size SOT-89x Dimensions in mm 8 MICRONAS INTERMETALL HAL525 3.7. Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 11.8 15.8 19.2 -19.2 -15.8 -11.8 27.4 31.6 35.8 25 C 11 14 17 -17 -14 -11 24 28 32 100 C 8 11 15.5 -15.5 -11 -8 18.5 22 28.7 0 mT 140 C 6.5 10 14 -14 -10 -6.5 16 20 26 0 mT 170 C 5 8.5 13 -13 -8.5 -5 12 17 25 0 mT -40 C Min. Typ. Unit Max. 0 -2 0 mT 2 mT The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Output Voltage VO BHYS VOL BOFF 0 BON B Fig. 3-5: Definition of magnetic switching points MICRONAS INTERMETALL 9 HAL525 mT 20 mT 20 HAL525 HAL525 BONmax BON BON BOFF 15 BON BOFF 15 10 10 5 5 TA = -40 C TA = 25 C 0 VDD = 4.5 V...24 V TA = 170 C -5 VDD = 3.8 V 0 TA = 100 C BONtyp BONmin -5 BOFFmax BOFF -10 -10 -15 -15 BOFFtyp BOFFmin -20 0 5 10 15 20 25 30 V Fig. 3-6: Typical magnetic switching points versus supply voltage HAL525 BON BON BOFF 0 50 100 150 200 C TA, TJ VDD mT 20 -20 -50 Fig. 3-8: Magnetic switching points versus temperature Note: In the diagram "Typical magnetic switching points versus ambient temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. 15 10 5 TA = -40 C TA = 25 C 0 TA = 100 C TA = 170 C -5 BOFF -10 -15 -20 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 3-7: Typical magnetic switching points versus supply voltage 10 MICRONAS INTERMETALL HAL525 mA 25 mA 5 HAL525 HAL525 20 IDD IDD TA = -40 C 15 4 TA = 25 C TA=170 C 10 3 5 2 0 VDD = 3.8 V VDD = 12 V -5 VDD = 24 V 1 -10 -15 -15-10 -5 0 0 -50 5 10 15 20 25 30 35 V 0 50 100 VDD 200 C TA Fig. 3-9: Typical supply current versus supply voltage mA 5.0 150 Fig. 3-11: Typical supply current versus ambient temperature kHz 160 HAL525 4.5 HAL525 140 IDD 4.0 fosc TA = -40 C 3.5 VDD = 4.5 V...24 V TA = 25 C 100 3.0 TA = 100 C 2.5 VDD = 3.8 V 120 80 TA = 170 C 2.0 60 1.5 40 1.0 20 0.5 0 1 2 3 4 5 6 VDD Fig. 3-10: Typical supply current versus supply voltage MICRONAS INTERMETALL 7 8 V 0 -50 0 50 100 150 200 C TA Fig. 3-12: Typ. internal chopper frequency versus ambient temperature 11 HAL525 mV 400 mV 400 HAL525 HAL525 IO = 20 mA IO = 20 mA 350 VDD = 3.8 V VOL VOL VDD = 4.5 V 300 300 VDD = 24 V TA = 170 C 250 TA = 100 C 200 200 TA = 25 C 150 TA = -40 C 100 100 50 0 0 5 10 15 20 25 30 V 0 -50 0 50 100 VDD 200 C TA Fig. 3-13: Typical output low voltage versus supply voltage mV 600 150 Fig. 3-15: Typical output low voltage versus ambient temperature HAL525 mA 104 HAL525 IO = 20 mA 103 VOL 500 IOH 102 101 400 TA = 170 C TA = 150 C 100 300 10-1 TA = 170 C TA = 100 C 10-2 TA =100 C 200 10-3 TA = 25 C 10-4 TA = -40 C 100 TA = 25 C TA = -40 C 10-5 0 3 4 5 6 VDD Fig. 3-14: Typical output low voltage versus supply voltage 12 7 V 10-6 15 20 25 30 35 V VOH Fig. 3-16: Typical output high current versus output voltage MICRONAS INTERMETALL HAL525 A HAL525 102 dBmV 80 HAL525 VP = 12 V TA = 25 C Quasi-PeakMeasurement test circuit 2 70 101 VDD IOH 60 100 50 max. spurious signals 10-1 40 10-2 VOH = 24 V 30 VOH = 3.8 V 10-3 20 10-4 10-5 -50 10 0 50 100 150 200 C TA IDD 0.10 1.00 1 10.00 100.00 10 100 1000.00 1000 MHz f Fig. 3-17: Typical output leakage current versus ambient temperature dBA 30 0 0.01 Fig. 3-19: Typ. spectrum of supply voltage HAL525 VDD = 12 V TA = 25 C Quasi-PeakMeasurement 20 max. spurious signals 10 0 -10 -20 -30 0.01 0.10 1.00 1 10.00 100.00 10 100 1000.00 1000 MHz f Fig. 3-18: Typ. spectrum of supply current MICRONAS INTERMETALL 13 HAL525 4. Application Notes 4.4. EMC 4.1. Ambient Temperature For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see figures 4-1 and 4-2). Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + T At static conditions, the following equation is valid: T = IDD * VDD * Rth For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: TAmax = TJmax - T The series resistor and the capacitor should be placed as closely as possible to the HAL sensor. The EMC performance has been tested in a lab environment with EMC optimized printed circuit board layouts. The results in the following tables show that function classes A and C could be reached in these investigations. Depending on customer circuit designs and layouts, EMC results obtained in those applications may be different from the ones obtained in the MICRONAS INTERMETALL lab investigations. Test Circuits for Electromagnetic Compatibility Test pulses VEMC corresponding to DIN 40839. Note: The international standard ISO 7637 is similar to the used product standard DIN 40839. 4.2. Extended Operating Conditions All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 7). Supply Voltage Below 3.8 V RV 220 1 VDD RL 680 RL 1.2 k OUT VEMC 3 4.7 nF Typically, the sensors operate with supply voltages above 3 V, however, below 3.8 V some characteristics may be outside the specification. Note: The functionality of the sensor below 3.8 V has not been tested. For special test conditions, please contact MICRONAS INTERMETALL. 4.3. Start-up Behavior 2 GND Fig. 4-1: Test circuit 1 RV 220 Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the Electrical Characteristics (see page 8). 1 VDD VEMC VP OUT 3 During the initialization time, the output state is not defined and the output can toggle. After ten(O), the output will be low if the applied magnetic field B is above BON. The output will be high if B is below BOFF. For magnetic fields between BOFF and BON, the output state of the HAL sensor after applying VDD will be either low or high. In order to achieve a well-defined output state, the applied magnetic field must be above BONmax, respectively, below BOFFmin. 14 4.7 nF 20 pF 2 GND Fig. 4-2: Test circuit 2 MICRONAS INTERMETALL HAL525 Interferences conducted along supply lines in 12 V onboard systems Product standard: DIN 40839 part 1 TestPulse Severity Level Us in V Test circuit Pulses/ Time Function Class Remarks 1 IV -100 1 5000 C 5 s pulse interval 2 IV 100 1 5000 C 0.5 s pulse interval 3a IV -150 2 1h A 3b IV 100 2 1h A 4 IV -7 2 5 A 5 IV 86.5 1 10 C 10 s pulse interval Electrical transient transmission by capacitive and inductive coupling via lines other than the supply lines Product standard: DIN 40839 part 3 TestPulse Severity Level Us in V Test circuit Pulses/ Time Function Class Remarks 1 IV -30 2 500 A 5 s pulse interval 2 IV 30 2 500 A 0.5 s pulse interval 3a IV -60 2 10 min A 3b IV 40 2 10 min A Radiated Disturbances Product standard: DIN 40839 part 4 Test Conditions - Temperature: Room temperature (22 ... 25 C) - Supply voltage: 13 V - Lab Equipment: TEM cell 220 MHz with adaptor board 455 mm, device 80 mm over ground - Frequency range: 5 ... 220 MHz; 1 MHz steps - Test circuit 2 - tested with static magnetic fields Tested Devices and Results Type Field Strength during test Modulation Result HAL525 > 200 V/m - output voltage stable on the level high or low1) HAL525 > 200 V/m 1 kHz 80 % output voltage stable on the level high or low1) 1) low level < 0.4 V, high level > 90% of VDD MICRONAS INTERMETALL 15 HAL525 5. Data Sheet History 1. Final data sheet: "HAL 525 Hall Effect Sensor IC", April 23, 1997, 6251-465-1DS. First release of the final data sheet. 2. Final data sheet: "HAL 525 Hall Effect Sensor IC", March 10, 1999, 6251-465-2DS. Second release of the final data sheet. Major changes: - additional package SOT-89B - outline dimensions for SOT-89A and TO-92UA changed - electrical characteristics changed - section 4.2.: Extended Operating Conditions added - section 4.3.: Start-up Behavior added MICRONAS INTERMETALL GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@intermetall.de Internet: http://www.intermetall.de Printed in Germany Order No. 6251-485-2DS 16 All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery dates are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, MICRONAS INTERMETALL GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Reprinting is generally permitted, indicating the source. However, our prior consent must be obtained in all cases. MICRONAS INTERMETALL End of Data Sheet Multimedia ICs MICRONAS Back to Summary Back to Data Sheets